KR101133834B1 - 고체 촬상 장치 및 고체 촬상 장치의 구동 방법 - Google Patents

고체 촬상 장치 및 고체 촬상 장치의 구동 방법 Download PDF

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Publication number
KR101133834B1
KR101133834B1 KR20050033910A KR20050033910A KR101133834B1 KR 101133834 B1 KR101133834 B1 KR 101133834B1 KR 20050033910 A KR20050033910 A KR 20050033910A KR 20050033910 A KR20050033910 A KR 20050033910A KR 101133834 B1 KR101133834 B1 KR 101133834B1
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South Korea
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potential
pixel
reset
transistor
signal line
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Korean (ko)
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KR20060045825A (ko
Inventor
게이지 마부찌
도시후미 와까노
겐 고세끼
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소니 주식회사
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    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/60—Noise processing, e.g. detecting, correcting, reducing or removing noise
    • H04N25/616—Noise processing, e.g. detecting, correcting, reducing or removing noise involving a correlated sampling function, e.g. correlated double sampling [CDS] or triple sampling
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/60—Noise processing, e.g. detecting, correcting, reducing or removing noise
    • H04N25/67—Noise processing, e.g. detecting, correcting, reducing or removing noise applied to fixed-pattern noise, e.g. non-uniformity of response
    • H04N25/671—Noise processing, e.g. detecting, correcting, reducing or removing noise applied to fixed-pattern noise, e.g. non-uniformity of response for non-uniformity detection or correction
    • H04N25/677—Noise processing, e.g. detecting, correcting, reducing or removing noise applied to fixed-pattern noise, e.g. non-uniformity of response for non-uniformity detection or correction for reducing the column or line fixed pattern noise
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/70—SSIS architectures; Circuits associated therewith
    • H04N25/76—Addressed sensors, e.g. MOS or CMOS sensors
    • H04N25/766—Addressed sensors, e.g. MOS or CMOS sensors comprising control or output lines used for a plurality of functions, e.g. for pixel output, driving, reset or power
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/70—SSIS architectures; Circuits associated therewith
    • H04N25/76—Addressed sensors, e.g. MOS or CMOS sensors
    • H04N25/767—Horizontal readout lines, multiplexers or registers
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/70—SSIS architectures; Circuits associated therewith
    • H04N25/76—Addressed sensors, e.g. MOS or CMOS sensors
    • H04N25/77—Pixel circuitry, e.g. memories, A/D converters, pixel amplifiers, shared circuits or shared components
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/70—SSIS architectures; Circuits associated therewith
    • H04N25/76—Addressed sensors, e.g. MOS or CMOS sensors
    • H04N25/77—Pixel circuitry, e.g. memories, A/D converters, pixel amplifiers, shared circuits or shared components
    • H04N25/778—Pixel circuitry, e.g. memories, A/D converters, pixel amplifiers, shared circuits or shared components comprising amplifiers shared between a plurality of pixels, i.e. at least one part of the amplifier must be on the sensor array itself
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/70—SSIS architectures; Circuits associated therewith
    • H04N25/76—Addressed sensors, e.g. MOS or CMOS sensors
    • H04N25/78—Readout circuits for addressed sensors, e.g. output amplifiers or A/D converters
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/12—Image sensors
    • H10F39/18—Complementary metal-oxide-semiconductor [CMOS] image sensors; Photodiode array image sensors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/803—Pixels having integrated switching, control, storage or amplification elements
    • H10F39/8037—Pixels having integrated switching, control, storage or amplification elements the integrated elements comprising a transistor

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  • Engineering & Computer Science (AREA)
  • Multimedia (AREA)
  • Signal Processing (AREA)
  • Solid State Image Pick-Up Elements (AREA)
  • Transforming Light Signals Into Electric Signals (AREA)
KR20050033910A 2004-04-26 2005-04-25 고체 촬상 장치 및 고체 촬상 장치의 구동 방법 Expired - Fee Related KR101133834B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JPJP-P-2004-00129388 2004-04-26
JP2004129388A JP4403387B2 (ja) 2004-04-26 2004-04-26 固体撮像装置および固体撮像装置の駆動方法

Publications (2)

Publication Number Publication Date
KR20060045825A KR20060045825A (ko) 2006-05-17
KR101133834B1 true KR101133834B1 (ko) 2012-04-06

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KR20050033910A Expired - Fee Related KR101133834B1 (ko) 2004-04-26 2005-04-25 고체 촬상 장치 및 고체 촬상 장치의 구동 방법

Country Status (6)

Country Link
US (5) US7675095B2 (https=)
EP (2) EP2268003A3 (https=)
JP (1) JP4403387B2 (https=)
KR (1) KR101133834B1 (https=)
CN (1) CN1691347B (https=)
TW (1) TWI272718B (https=)

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JP4713997B2 (ja) * 2005-10-28 2011-06-29 株式会社東芝 固体撮像装置
KR100790228B1 (ko) * 2005-12-26 2008-01-02 매그나칩 반도체 유한회사 시모스 이미지 센서
JP4325703B2 (ja) * 2007-05-24 2009-09-02 ソニー株式会社 固体撮像装置、固体撮像装置の信号処理装置および信号処理方法、ならびに撮像装置
JP5258416B2 (ja) * 2008-06-27 2013-08-07 パナソニック株式会社 固体撮像装置
JP5262512B2 (ja) 2008-09-25 2013-08-14 ソニー株式会社 撮像素子およびその制御方法並びにカメラ
JP5257176B2 (ja) * 2009-03-18 2013-08-07 ソニー株式会社 固体撮像装置、固体撮像装置の駆動方法および電子機器
JP2011044879A (ja) * 2009-08-20 2011-03-03 Toshiba Corp 固体撮像装置およびその駆動方法
WO2011116345A1 (en) * 2010-03-19 2011-09-22 Invisage Technologies, Inc. Dark current reduction in image sensors via dynamic electrical biasing
JP2011205249A (ja) * 2010-03-24 2011-10-13 Toshiba Corp 固体撮像装置
JP5558278B2 (ja) 2010-09-10 2014-07-23 株式会社東芝 固体撮像装置
JP2013062611A (ja) * 2011-09-12 2013-04-04 Sony Corp 固体撮像素子およびカメラシステム
CN104412387B (zh) * 2012-06-27 2017-11-21 松下知识产权经营株式会社 固体摄像装置
CN103986889B (zh) * 2013-02-08 2017-06-13 豪威科技股份有限公司 用于传感器故障检测的系统及方法
JP2015088691A (ja) * 2013-11-01 2015-05-07 ソニー株式会社 固体撮像装置およびその製造方法、並びに電子機器
TWI643500B (zh) 2014-03-31 2018-12-01 日商新力股份有限公司 攝像元件、攝像方法及電子機器
JP6418775B2 (ja) * 2014-04-18 2018-11-07 キヤノン株式会社 光電変換装置、撮像システム、および光電変換装置の駆動方法
JP6242287B2 (ja) 2014-05-08 2017-12-06 オリンパス株式会社 固体撮像装置および内視鏡装置
US10104322B2 (en) 2014-07-31 2018-10-16 Invisage Technologies, Inc. Image sensors with noise reduction
JP6537838B2 (ja) * 2015-01-30 2019-07-03 ルネサスエレクトロニクス株式会社 撮像素子
JP6486151B2 (ja) * 2015-03-05 2019-03-20 キヤノン株式会社 撮像システム
US9685482B2 (en) * 2015-03-09 2017-06-20 Semiconductor Components Industries, Llc Image sensor with buried-channel drain (BCD) transistors
JP2016178408A (ja) 2015-03-19 2016-10-06 キヤノン株式会社 固体撮像装置及びその駆動方法、並びに撮像システム
JP6832649B2 (ja) * 2016-08-17 2021-02-24 ブリルニクス インク 固体撮像装置、固体撮像装置の駆動方法、および電子機器
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CN108304803B (zh) * 2018-01-31 2021-04-23 京东方科技集团股份有限公司 光检测电路、光检测方法和显示装置
CN112532899B (zh) * 2020-11-27 2023-06-30 京东方科技集团股份有限公司 光电转换电路、驱动方法、光电检测基板、光电检测装置

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Also Published As

Publication number Publication date
EP1592230A3 (en) 2007-01-10
US20140077068A1 (en) 2014-03-20
US9029925B2 (en) 2015-05-12
US7675095B2 (en) 2010-03-09
TWI272718B (en) 2007-02-01
JP2005311932A (ja) 2005-11-04
EP2268003A2 (en) 2010-12-29
TW200605342A (en) 2006-02-01
CN1691347B (zh) 2010-06-16
EP2268003A3 (en) 2016-10-05
US8618589B2 (en) 2013-12-31
US8008697B2 (en) 2011-08-30
CN1691347A (zh) 2005-11-02
US20050248674A1 (en) 2005-11-10
JP4403387B2 (ja) 2010-01-27
US9865633B2 (en) 2018-01-09
EP1592230A2 (en) 2005-11-02
KR20060045825A (ko) 2006-05-17
US20110248148A1 (en) 2011-10-13
US20150155317A1 (en) 2015-06-04
US20100128153A1 (en) 2010-05-27

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