JP4387076B2 - 半導体装置 - Google Patents

半導体装置 Download PDF

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Publication number
JP4387076B2
JP4387076B2 JP2001320554A JP2001320554A JP4387076B2 JP 4387076 B2 JP4387076 B2 JP 4387076B2 JP 2001320554 A JP2001320554 A JP 2001320554A JP 2001320554 A JP2001320554 A JP 2001320554A JP 4387076 B2 JP4387076 B2 JP 4387076B2
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JP
Japan
Prior art keywords
electrodes
semiconductor chip
power supply
external terminals
circuit
Prior art date
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Expired - Fee Related
Application number
JP2001320554A
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English (en)
Japanese (ja)
Other versions
JP2003124383A (ja
JP2003124383A5 (enExample
Inventor
元大 諏訪
雄一 馬淵
篤 中村
英士 福本
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Renesas Technology Corp
Original Assignee
Renesas Technology Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Renesas Technology Corp filed Critical Renesas Technology Corp
Priority to JP2001320554A priority Critical patent/JP4387076B2/ja
Priority to TW091123439A priority patent/TW586211B/zh
Priority to US10/268,700 priority patent/US6803659B2/en
Priority to KR1020020063624A priority patent/KR100929620B1/ko
Publication of JP2003124383A publication Critical patent/JP2003124383A/ja
Priority to US10/939,491 priority patent/US7095117B2/en
Publication of JP2003124383A5 publication Critical patent/JP2003124383A5/ja
Application granted granted Critical
Publication of JP4387076B2 publication Critical patent/JP4387076B2/ja
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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Classifications

    • H10W70/685
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10DINORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10W70/65
    • H10W72/00
    • H10W70/63
    • H10W70/655
    • H10W72/075
    • H10W72/551
    • H10W72/884
    • H10W72/951
    • H10W74/00
    • H10W74/15
    • H10W90/724
    • H10W90/734
    • H10W90/754

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  • Semiconductor Integrated Circuits (AREA)
JP2001320554A 2001-10-18 2001-10-18 半導体装置 Expired - Fee Related JP4387076B2 (ja)

Priority Applications (5)

Application Number Priority Date Filing Date Title
JP2001320554A JP4387076B2 (ja) 2001-10-18 2001-10-18 半導体装置
TW091123439A TW586211B (en) 2001-10-18 2002-10-11 Semiconductor device and electronic device
US10/268,700 US6803659B2 (en) 2001-10-18 2002-10-11 Semiconductor device and an electronic device
KR1020020063624A KR100929620B1 (ko) 2001-10-18 2002-10-17 반도체장치와 전자장치
US10/939,491 US7095117B2 (en) 2001-10-18 2004-09-14 Semiconductor device and an electronic device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2001320554A JP4387076B2 (ja) 2001-10-18 2001-10-18 半導体装置

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP2006154886A Division JP2006245613A (ja) 2006-06-02 2006-06-02 半導体装置

Publications (3)

Publication Number Publication Date
JP2003124383A JP2003124383A (ja) 2003-04-25
JP2003124383A5 JP2003124383A5 (enExample) 2005-06-16
JP4387076B2 true JP4387076B2 (ja) 2009-12-16

Family

ID=19137927

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2001320554A Expired - Fee Related JP4387076B2 (ja) 2001-10-18 2001-10-18 半導体装置

Country Status (4)

Country Link
US (2) US6803659B2 (enExample)
JP (1) JP4387076B2 (enExample)
KR (1) KR100929620B1 (enExample)
TW (1) TW586211B (enExample)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US11081439B2 (en) 2018-11-26 2021-08-03 Kabushiki Kaisha Toshiba Integrated circuit and electronic circuit comprising the same

Families Citing this family (31)

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Publication number Priority date Publication date Assignee Title
TW571375B (en) * 2002-11-13 2004-01-11 Advanced Semiconductor Eng Semiconductor package structure with ground and method for manufacturing thereof
TW571410B (en) * 2002-12-24 2004-01-11 Via Tech Inc BGA package with the same power ballout assignment for wire bonding packaging and flip chip packaging
TWI229401B (en) * 2003-02-19 2005-03-11 Via Tech Inc A wafer lever test and bump process and a chip structure with test pad
JP4708716B2 (ja) * 2003-02-27 2011-06-22 ルネサスエレクトロニクス株式会社 半導体集積回路装置、半導体集積回路装置の設計方法
US7183786B2 (en) * 2003-03-04 2007-02-27 Avago Technologies General Ip (Singapore) Pte. Ltd. Modifying a semiconductor device to provide electrical parameter monitoring
US6992387B2 (en) * 2003-06-23 2006-01-31 Intel Corporation Capacitor-related systems for addressing package/motherboard resonance
US7279796B2 (en) * 2003-08-08 2007-10-09 Intel Corporation Microelectronic die having a thermoelectric module
JP4195883B2 (ja) * 2004-02-04 2008-12-17 インターナショナル・ビジネス・マシーンズ・コーポレーション 多層モジュール
JP3999759B2 (ja) * 2004-04-02 2007-10-31 富士通株式会社 基板及び電子機器
JP4647243B2 (ja) * 2004-05-24 2011-03-09 ルネサスエレクトロニクス株式会社 半導体装置
JP4552524B2 (ja) * 2004-06-10 2010-09-29 パナソニック株式会社 複合型電子部品
TWI237380B (en) * 2004-11-19 2005-08-01 Advanced Semiconductor Eng Build-up via for suppressing simultaneous switching noise
JP4640950B2 (ja) * 2005-05-16 2011-03-02 ルネサスエレクトロニクス株式会社 半導体装置
US7250673B2 (en) * 2005-06-06 2007-07-31 Triquint Semiconductor, Inc. Signal isolation in a package substrate
US7745944B2 (en) 2005-08-31 2010-06-29 Micron Technology, Inc. Microelectronic devices having intermediate contacts for connection to interposer substrates, and associated methods of packaging microelectronic devices with intermediate contacts
US7701052B2 (en) * 2005-10-21 2010-04-20 E. I. Du Pont De Nemours And Company Power core devices
US8063480B2 (en) * 2006-02-28 2011-11-22 Canon Kabushiki Kaisha Printed board and semiconductor integrated circuit
US7768075B2 (en) 2006-04-06 2010-08-03 Fairchild Semiconductor Corporation Semiconductor die packages using thin dies and metal substrates
JP2009111138A (ja) * 2007-10-30 2009-05-21 Mitsubishi Electric Corp 半導体集積回路パッケージ及び回路基板
JP2009231891A (ja) * 2008-03-19 2009-10-08 Nec Electronics Corp 半導体装置
US8717093B2 (en) * 2010-01-08 2014-05-06 Mindspeed Technologies, Inc. System on chip power management through package configuration
JP2011187662A (ja) * 2010-03-08 2011-09-22 Renesas Electronics Corp 半導体パッケージ、基板、電子部品、及び半導体パッケージの実装方法
CN103098206A (zh) * 2010-03-18 2013-05-08 莫塞德技术公司 具有偏移裸片叠层的多芯片封装及其制造方法
KR101232645B1 (ko) * 2010-12-21 2013-02-13 한국과학기술원 전원 핀을 포함하는 3차원 집적 회로 및 3차원 집적 회로의 전원 핀 배치 방법
EP2866535B1 (en) * 2012-06-22 2019-09-04 Nikon Corporation Substrate, imaging unit and imaging device
JP6207422B2 (ja) * 2014-02-19 2017-10-04 ルネサスエレクトロニクス株式会社 電子装置
JP6631114B2 (ja) * 2015-09-17 2020-01-15 富士電機株式会社 半導体装置及び半導体装置の計測方法
KR20180134464A (ko) 2017-06-08 2018-12-19 에스케이하이닉스 주식회사 반도체 장치 및 시스템
JP7226899B2 (ja) * 2018-04-27 2023-02-21 ラピスセミコンダクタ株式会社 電子機器及び配線基板
TWI723343B (zh) * 2019-02-19 2021-04-01 頎邦科技股份有限公司 具立體電感之半導體結構及其製造方法
CN115244681A (zh) * 2020-03-30 2022-10-25 华为技术有限公司 一种裸芯片、封装结构、电子设备及制备方法

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2716005B2 (ja) 1995-07-04 1998-02-18 日本電気株式会社 ワイヤボンド型半導体装置
JPH09148478A (ja) * 1995-11-21 1997-06-06 Hitachi Ltd 半導体集積回路装置
JPH09223758A (ja) * 1996-02-19 1997-08-26 Hitachi Ltd 半導体装置
US5672911A (en) * 1996-05-30 1997-09-30 Lsi Logic Corporation Apparatus to decouple core circuits power supply from input-output circuits power supply in a semiconductor device package
JPH1134886A (ja) 1997-07-16 1999-02-09 Toyoda Mach Works Ltd 操舵装置
US6396136B2 (en) * 1998-12-31 2002-05-28 Texas Instruments Incorporated Ball grid package with multiple power/ground planes
JP2001035960A (ja) * 1999-07-21 2001-02-09 Mitsubishi Electric Corp 半導体装置および製造方法
JP3745176B2 (ja) * 1999-11-10 2006-02-15 キヤノン株式会社 プリント配線板

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US11081439B2 (en) 2018-11-26 2021-08-03 Kabushiki Kaisha Toshiba Integrated circuit and electronic circuit comprising the same

Also Published As

Publication number Publication date
US20050029648A1 (en) 2005-02-10
KR20030032878A (ko) 2003-04-26
TW586211B (en) 2004-05-01
KR100929620B1 (ko) 2009-12-03
JP2003124383A (ja) 2003-04-25
US7095117B2 (en) 2006-08-22
US6803659B2 (en) 2004-10-12
US20030080353A1 (en) 2003-05-01

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