TW586211B - Semiconductor device and electronic device - Google Patents

Semiconductor device and electronic device Download PDF

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Publication number
TW586211B
TW586211B TW091123439A TW91123439A TW586211B TW 586211 B TW586211 B TW 586211B TW 091123439 A TW091123439 A TW 091123439A TW 91123439 A TW91123439 A TW 91123439A TW 586211 B TW586211 B TW 586211B
Authority
TW
Taiwan
Prior art keywords
electrode
wiring
semiconductor device
electrodes
semiconductor wafer
Prior art date
Application number
TW091123439A
Other languages
English (en)
Chinese (zh)
Inventor
Motoo Suwa
Yuichi Mabuchi
Atsushi Nakamura
Hideshi Fukumoto
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Application granted granted Critical
Publication of TW586211B publication Critical patent/TW586211B/zh

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Classifications

    • H10W70/685
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10DINORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10W70/65
    • H10W72/00
    • H10W70/63
    • H10W70/655
    • H10W72/075
    • H10W72/551
    • H10W72/884
    • H10W72/951
    • H10W74/00
    • H10W74/15
    • H10W90/724
    • H10W90/734
    • H10W90/754

Landscapes

  • Semiconductor Integrated Circuits (AREA)
TW091123439A 2001-10-18 2002-10-11 Semiconductor device and electronic device TW586211B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2001320554A JP4387076B2 (ja) 2001-10-18 2001-10-18 半導体装置

Publications (1)

Publication Number Publication Date
TW586211B true TW586211B (en) 2004-05-01

Family

ID=19137927

Family Applications (1)

Application Number Title Priority Date Filing Date
TW091123439A TW586211B (en) 2001-10-18 2002-10-11 Semiconductor device and electronic device

Country Status (4)

Country Link
US (2) US6803659B2 (enExample)
JP (1) JP4387076B2 (enExample)
KR (1) KR100929620B1 (enExample)
TW (1) TW586211B (enExample)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7745944B2 (en) 2005-08-31 2010-06-29 Micron Technology, Inc. Microelectronic devices having intermediate contacts for connection to interposer substrates, and associated methods of packaging microelectronic devices with intermediate contacts
CN109036483A (zh) * 2017-06-08 2018-12-18 爱思开海力士有限公司 半导体装置和系统
CN111584463A (zh) * 2019-02-19 2020-08-25 颀邦科技股份有限公司 具有立体电感的半导体结构及其制造方法

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TW571375B (en) * 2002-11-13 2004-01-11 Advanced Semiconductor Eng Semiconductor package structure with ground and method for manufacturing thereof
TW571410B (en) * 2002-12-24 2004-01-11 Via Tech Inc BGA package with the same power ballout assignment for wire bonding packaging and flip chip packaging
TWI229401B (en) * 2003-02-19 2005-03-11 Via Tech Inc A wafer lever test and bump process and a chip structure with test pad
JP4708716B2 (ja) * 2003-02-27 2011-06-22 ルネサスエレクトロニクス株式会社 半導体集積回路装置、半導体集積回路装置の設計方法
US7183786B2 (en) * 2003-03-04 2007-02-27 Avago Technologies General Ip (Singapore) Pte. Ltd. Modifying a semiconductor device to provide electrical parameter monitoring
US6992387B2 (en) * 2003-06-23 2006-01-31 Intel Corporation Capacitor-related systems for addressing package/motherboard resonance
US7279796B2 (en) * 2003-08-08 2007-10-09 Intel Corporation Microelectronic die having a thermoelectric module
JP4195883B2 (ja) * 2004-02-04 2008-12-17 インターナショナル・ビジネス・マシーンズ・コーポレーション 多層モジュール
JP3999759B2 (ja) * 2004-04-02 2007-10-31 富士通株式会社 基板及び電子機器
JP4647243B2 (ja) * 2004-05-24 2011-03-09 ルネサスエレクトロニクス株式会社 半導体装置
JP4552524B2 (ja) * 2004-06-10 2010-09-29 パナソニック株式会社 複合型電子部品
TWI237380B (en) * 2004-11-19 2005-08-01 Advanced Semiconductor Eng Build-up via for suppressing simultaneous switching noise
JP4640950B2 (ja) * 2005-05-16 2011-03-02 ルネサスエレクトロニクス株式会社 半導体装置
US7250673B2 (en) * 2005-06-06 2007-07-31 Triquint Semiconductor, Inc. Signal isolation in a package substrate
US7701052B2 (en) * 2005-10-21 2010-04-20 E. I. Du Pont De Nemours And Company Power core devices
US8063480B2 (en) * 2006-02-28 2011-11-22 Canon Kabushiki Kaisha Printed board and semiconductor integrated circuit
US7768075B2 (en) 2006-04-06 2010-08-03 Fairchild Semiconductor Corporation Semiconductor die packages using thin dies and metal substrates
JP2009111138A (ja) * 2007-10-30 2009-05-21 Mitsubishi Electric Corp 半導体集積回路パッケージ及び回路基板
JP2009231891A (ja) * 2008-03-19 2009-10-08 Nec Electronics Corp 半導体装置
US8717093B2 (en) * 2010-01-08 2014-05-06 Mindspeed Technologies, Inc. System on chip power management through package configuration
JP2011187662A (ja) * 2010-03-08 2011-09-22 Renesas Electronics Corp 半導体パッケージ、基板、電子部品、及び半導体パッケージの実装方法
CN103098206A (zh) * 2010-03-18 2013-05-08 莫塞德技术公司 具有偏移裸片叠层的多芯片封装及其制造方法
KR101232645B1 (ko) * 2010-12-21 2013-02-13 한국과학기술원 전원 핀을 포함하는 3차원 집적 회로 및 3차원 집적 회로의 전원 핀 배치 방법
EP2866535B1 (en) * 2012-06-22 2019-09-04 Nikon Corporation Substrate, imaging unit and imaging device
JP6207422B2 (ja) * 2014-02-19 2017-10-04 ルネサスエレクトロニクス株式会社 電子装置
JP6631114B2 (ja) * 2015-09-17 2020-01-15 富士電機株式会社 半導体装置及び半導体装置の計測方法
JP7226899B2 (ja) * 2018-04-27 2023-02-21 ラピスセミコンダクタ株式会社 電子機器及び配線基板
JP7110073B2 (ja) 2018-11-26 2022-08-01 株式会社東芝 集積回路及びそれを備えた電子回路
CN115244681A (zh) * 2020-03-30 2022-10-25 华为技术有限公司 一种裸芯片、封装结构、电子设备及制备方法

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2716005B2 (ja) 1995-07-04 1998-02-18 日本電気株式会社 ワイヤボンド型半導体装置
JPH09148478A (ja) * 1995-11-21 1997-06-06 Hitachi Ltd 半導体集積回路装置
JPH09223758A (ja) * 1996-02-19 1997-08-26 Hitachi Ltd 半導体装置
US5672911A (en) * 1996-05-30 1997-09-30 Lsi Logic Corporation Apparatus to decouple core circuits power supply from input-output circuits power supply in a semiconductor device package
JPH1134886A (ja) 1997-07-16 1999-02-09 Toyoda Mach Works Ltd 操舵装置
US6396136B2 (en) * 1998-12-31 2002-05-28 Texas Instruments Incorporated Ball grid package with multiple power/ground planes
JP2001035960A (ja) * 1999-07-21 2001-02-09 Mitsubishi Electric Corp 半導体装置および製造方法
JP3745176B2 (ja) * 1999-11-10 2006-02-15 キヤノン株式会社 プリント配線板

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7745944B2 (en) 2005-08-31 2010-06-29 Micron Technology, Inc. Microelectronic devices having intermediate contacts for connection to interposer substrates, and associated methods of packaging microelectronic devices with intermediate contacts
US8319332B2 (en) 2005-08-31 2012-11-27 Micron Technology, Inc. Microelectronic devices having intermediate contacts for connection to interposer substrates, and associated methods of packaging microelectronic devices with intermediate contacts
US8703599B2 (en) 2005-08-31 2014-04-22 Micron Technology, Inc. Microelectronic devices having intermediate contacts for connection to interposer substrates, and associated methods of packaging microelectronic devices with intermediate contacts
CN109036483A (zh) * 2017-06-08 2018-12-18 爱思开海力士有限公司 半导体装置和系统
US11380676B2 (en) 2017-06-08 2022-07-05 SK Hynix Inc. Semiconductor apparatus and system
CN109036483B (zh) * 2017-06-08 2022-09-20 爱思开海力士有限公司 半导体装置和系统
CN111584463A (zh) * 2019-02-19 2020-08-25 颀邦科技股份有限公司 具有立体电感的半导体结构及其制造方法

Also Published As

Publication number Publication date
US20050029648A1 (en) 2005-02-10
KR20030032878A (ko) 2003-04-26
KR100929620B1 (ko) 2009-12-03
JP2003124383A (ja) 2003-04-25
US7095117B2 (en) 2006-08-22
US6803659B2 (en) 2004-10-12
US20030080353A1 (en) 2003-05-01
JP4387076B2 (ja) 2009-12-16

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MM4A Annulment or lapse of patent due to non-payment of fees