JP4073174B2 - 中性粒子ビーム処理装置 - Google Patents

中性粒子ビーム処理装置 Download PDF

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Publication number
JP4073174B2
JP4073174B2 JP2001088863A JP2001088863A JP4073174B2 JP 4073174 B2 JP4073174 B2 JP 4073174B2 JP 2001088863 A JP2001088863 A JP 2001088863A JP 2001088863 A JP2001088863 A JP 2001088863A JP 4073174 B2 JP4073174 B2 JP 4073174B2
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JP
Japan
Prior art keywords
orifice
plasma
electrode
ions
negative ions
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
JP2001088863A
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English (en)
Japanese (ja)
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JP2002289583A5 (enExample
JP2002289583A (ja
Inventor
克則 一木
和雄 山内
浩国 桧山
誠二 寒川
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Ebara Corp
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Ebara Corp
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Publication date
Application filed by Ebara Corp filed Critical Ebara Corp
Priority to JP2001088863A priority Critical patent/JP4073174B2/ja
Priority to PCT/JP2002/002749 priority patent/WO2002078043A2/en
Priority to US10/471,610 priority patent/US6849857B2/en
Priority to AU2002239025A priority patent/AU2002239025A1/en
Publication of JP2002289583A publication Critical patent/JP2002289583A/ja
Publication of JP2002289583A5 publication Critical patent/JP2002289583A5/ja
Application granted granted Critical
Publication of JP4073174B2 publication Critical patent/JP4073174B2/ja
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/32137—Radio frequency generated discharge controlling of the discharge by modulation of energy
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/02—Details
    • H01J37/04—Arrangements of electrodes and associated parts for generating or controlling the discharge, e.g. electron-optical arrangement or ion-optical arrangement
    • H01J37/08—Ion sources; Ion guns
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32357—Generation remote from the workpiece, e.g. down-stream
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/06—Sources
    • H01J2237/08—Ion sources
    • H01J2237/0822—Multiple sources
    • H01J2237/0827—Multiple sources for producing different ions sequentially

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  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Plasma Technology (AREA)
  • Drying Of Semiconductors (AREA)
  • Physical Vapour Deposition (AREA)
  • Physical Or Chemical Processes And Apparatus (AREA)
JP2001088863A 2001-03-26 2001-03-26 中性粒子ビーム処理装置 Expired - Fee Related JP4073174B2 (ja)

Priority Applications (4)

Application Number Priority Date Filing Date Title
JP2001088863A JP4073174B2 (ja) 2001-03-26 2001-03-26 中性粒子ビーム処理装置
PCT/JP2002/002749 WO2002078043A2 (en) 2001-03-26 2002-03-22 Beam processing apparatus
US10/471,610 US6849857B2 (en) 2001-03-26 2002-03-22 Beam processing apparatus
AU2002239025A AU2002239025A1 (en) 2001-03-26 2002-03-22 Beam processing apparatus

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2001088863A JP4073174B2 (ja) 2001-03-26 2001-03-26 中性粒子ビーム処理装置

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP2007326831A Division JP2008108745A (ja) 2007-12-19 2007-12-19 中性粒子ビーム処理装置

Publications (3)

Publication Number Publication Date
JP2002289583A JP2002289583A (ja) 2002-10-04
JP2002289583A5 JP2002289583A5 (enExample) 2004-12-24
JP4073174B2 true JP4073174B2 (ja) 2008-04-09

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Family Applications (1)

Application Number Title Priority Date Filing Date
JP2001088863A Expired - Fee Related JP4073174B2 (ja) 2001-03-26 2001-03-26 中性粒子ビーム処理装置

Country Status (4)

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US (1) US6849857B2 (enExample)
JP (1) JP4073174B2 (enExample)
AU (1) AU2002239025A1 (enExample)
WO (1) WO2002078043A2 (enExample)

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* Cited by examiner, † Cited by third party
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