JP4057215B2 - 半導体装置の製造方法および液晶表示装置の製造方法 - Google Patents

半導体装置の製造方法および液晶表示装置の製造方法 Download PDF

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Publication number
JP4057215B2
JP4057215B2 JP2000062066A JP2000062066A JP4057215B2 JP 4057215 B2 JP4057215 B2 JP 4057215B2 JP 2000062066 A JP2000062066 A JP 2000062066A JP 2000062066 A JP2000062066 A JP 2000062066A JP 4057215 B2 JP4057215 B2 JP 4057215B2
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JP
Japan
Prior art keywords
semiconductor film
film
surface layer
manufacturing
amorphous
Prior art date
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Expired - Fee Related
Application number
JP2000062066A
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English (en)
Japanese (ja)
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JP2001250776A5 (enExample
JP2001250776A (ja
Inventor
正美 林
正直 小林
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Seiko Epson Corp
Mitsubishi Electric Corp
Original Assignee
Seiko Epson Corp
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Seiko Epson Corp, Mitsubishi Electric Corp filed Critical Seiko Epson Corp
Priority to JP2000062066A priority Critical patent/JP4057215B2/ja
Priority to TW090105088A priority patent/TW499763B/zh
Priority to US09/799,110 priority patent/US6812071B2/en
Priority to KR10-2001-0011351A priority patent/KR100411321B1/ko
Priority to CNB011109513A priority patent/CN1196200C/zh
Publication of JP2001250776A publication Critical patent/JP2001250776A/ja
Publication of JP2001250776A5 publication Critical patent/JP2001250776A5/ja
Application granted granted Critical
Publication of JP4057215B2 publication Critical patent/JP4057215B2/ja
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
    • H10D30/031—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT]
    • H10D30/0312—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT] characterised by the gate electrodes
    • H10D30/0314—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT] characterised by the gate electrodes of lateral top-gate TFTs comprising only a single gate
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
    • H10D30/031—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT]
    • H10D30/0321—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT] comprising silicon, e.g. amorphous silicon or polysilicon
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6704—Thin-film transistors [TFT] having supplementary regions or layers in the thin films or in the insulated bulk substrates for controlling properties of the device
    • H10D30/6725—Thin-film transistors [TFT] having supplementary regions or layers in the thin films or in the insulated bulk substrates for controlling properties of the device having supplementary regions or layers for improving the flatness of the device

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  • Physics & Mathematics (AREA)
  • Nonlinear Science (AREA)
  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Mathematical Physics (AREA)
  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • General Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Thin Film Transistor (AREA)
  • Recrystallisation Techniques (AREA)
  • Liquid Crystal (AREA)
JP2000062066A 2000-03-07 2000-03-07 半導体装置の製造方法および液晶表示装置の製造方法 Expired - Fee Related JP4057215B2 (ja)

Priority Applications (5)

Application Number Priority Date Filing Date Title
JP2000062066A JP4057215B2 (ja) 2000-03-07 2000-03-07 半導体装置の製造方法および液晶表示装置の製造方法
TW090105088A TW499763B (en) 2000-03-07 2001-03-06 Semiconductor device having a thin film fieldeffect transistor, liquid crystal display device, and production method thereof
US09/799,110 US6812071B2 (en) 2000-03-07 2001-03-06 Method of producing crystalline semiconductor film and semiconductor device from the film
KR10-2001-0011351A KR100411321B1 (ko) 2000-03-07 2001-03-06 박막 전계 효과 트랜지스터를 구비한 반도체 장치 및 그제조 방법
CNB011109513A CN1196200C (zh) 2000-03-07 2001-03-07 半导体装置的制造方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2000062066A JP4057215B2 (ja) 2000-03-07 2000-03-07 半導体装置の製造方法および液晶表示装置の製造方法

Publications (3)

Publication Number Publication Date
JP2001250776A JP2001250776A (ja) 2001-09-14
JP2001250776A5 JP2001250776A5 (enExample) 2004-12-09
JP4057215B2 true JP4057215B2 (ja) 2008-03-05

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Family Applications (1)

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JP2000062066A Expired - Fee Related JP4057215B2 (ja) 2000-03-07 2000-03-07 半導体装置の製造方法および液晶表示装置の製造方法

Country Status (5)

Country Link
US (1) US6812071B2 (enExample)
JP (1) JP4057215B2 (enExample)
KR (1) KR100411321B1 (enExample)
CN (1) CN1196200C (enExample)
TW (1) TW499763B (enExample)

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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4831885B2 (ja) * 2001-04-27 2011-12-07 株式会社半導体エネルギー研究所 半導体装置の作製方法
US7067849B2 (en) 2001-07-17 2006-06-27 Lg Electronics Inc. Diode having high brightness and method thereof
US6949395B2 (en) * 2001-10-22 2005-09-27 Oriol, Inc. Method of making diode having reflective layer
US7148520B2 (en) 2001-10-26 2006-12-12 Lg Electronics Inc. Diode having vertical structure and method of manufacturing the same
KR100831227B1 (ko) * 2001-12-17 2008-05-21 삼성전자주식회사 다결정 규소를 이용한 박막 트랜지스터의 제조 방법
JP4271413B2 (ja) 2002-06-28 2009-06-03 株式会社半導体エネルギー研究所 半導体装置の作製方法
JP2005276944A (ja) * 2004-03-23 2005-10-06 Sharp Corp 半導体デバイス、その製造方法および製造装置
JP2006190897A (ja) * 2005-01-07 2006-07-20 Sharp Corp 半導体デバイス、その製造方法および製造装置
US20080237593A1 (en) * 2005-01-07 2008-10-02 Junichiro Nakayama Semiconductor Device, Method of Fabricating the Same, and Apparatus for Fabricating the Same
US7531904B2 (en) * 2005-04-26 2009-05-12 Mitsui Mining & Smelting Co., Ltd. Al-Ni-B alloy wiring material and element structure using the same
JP4732219B2 (ja) * 2006-04-03 2011-07-27 相模サーボ株式会社 高純度シリコン製造方法及び高純度シリコン製造装置
JP4656441B2 (ja) * 2007-03-29 2011-03-23 株式会社日本製鋼所 薄膜の結晶化方法および結晶化装置
US7781076B2 (en) * 2007-06-26 2010-08-24 Eastman Kodak Company Heteropyrene-based semiconductor materials for electronic devices and methods of making the same
CN105097667B (zh) * 2015-06-24 2018-03-30 深圳市华星光电技术有限公司 低温多晶硅tft基板结构的制作方法及低温多晶硅tft基板结构
JP7213726B2 (ja) * 2019-03-13 2023-01-27 東京エレクトロン株式会社 成膜方法及び熱処理装置
CN111584362B (zh) * 2020-05-14 2023-08-22 Tcl华星光电技术有限公司 一种半导体器件制程方法、半导体器件及显示面板

Family Cites Families (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6046022A (ja) * 1983-08-23 1985-03-12 Sumitomo Electric Ind Ltd イオン注入用基板の前処理方法
JPS62262431A (ja) * 1986-05-08 1987-11-14 Fujitsu Ltd 半導体装置の製造方法
US5332441A (en) * 1991-10-31 1994-07-26 International Business Machines Corporation Apparatus for gettering of particles during plasma processing
JP3065825B2 (ja) * 1992-10-21 2000-07-17 株式会社半導体エネルギー研究所 レーザー処理方法
US5466953A (en) * 1993-05-28 1995-11-14 Santa Barbara Research Center Denuded zone field effect photoconductive detector
US5587045A (en) * 1995-04-27 1996-12-24 International Business Machines Corporation Gettering of particles from an electro-negative plasma with insulating chuck
JP3240263B2 (ja) * 1995-09-14 2001-12-17 株式会社東芝 不純物濃縮・分析方法およびこれに用いる装置
KR100440083B1 (ko) * 1996-01-23 2004-10-20 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체박막제작방법
US6465287B1 (en) * 1996-01-27 2002-10-15 Semiconductor Energy Laboratory Co., Ltd. Method for fabricating a semiconductor device using a metal catalyst and high temperature crystallization
JPH09213630A (ja) * 1996-02-05 1997-08-15 Semiconductor Energy Lab Co Ltd 半導体装置の作製方法
JP3319963B2 (ja) 1996-11-06 2002-09-03 シャープ株式会社 半導体装置の製造方法
JPH10200120A (ja) * 1997-01-10 1998-07-31 Sharp Corp 半導体装置の製造方法
JP3867283B2 (ja) * 1997-06-06 2007-01-10 日本テキサス・インスツルメンツ株式会社 強誘電体キャパシタの作製方法及び強誘電体メモリ装置の製造方法
US5950078A (en) * 1997-09-19 1999-09-07 Sharp Laboratories Of America, Inc. Rapid thermal annealing with absorptive layers for thin film transistors on transparent substrates
US6110649A (en) * 1997-11-19 2000-08-29 International Business Machines Corporation Process for manufacture of integrated circuit device
US6017805A (en) * 1998-01-26 2000-01-25 Lucent Technologies Inc. Method of reducing mobile ion contaminants in semiconductor films
KR100325066B1 (ko) * 1998-06-30 2002-08-14 주식회사 현대 디스플레이 테크놀로지 박막트랜지스터의제조방법
JP2000040828A (ja) 1998-07-24 2000-02-08 Toshiba Corp 薄膜トランジスタの製造方法

Also Published As

Publication number Publication date
KR100411321B1 (ko) 2003-12-18
CN1312591A (zh) 2001-09-12
KR20010088393A (ko) 2001-09-26
US6812071B2 (en) 2004-11-02
TW499763B (en) 2002-08-21
US20010032980A1 (en) 2001-10-25
CN1196200C (zh) 2005-04-06
JP2001250776A (ja) 2001-09-14

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