TW499763B - Semiconductor device having a thin film fieldeffect transistor, liquid crystal display device, and production method thereof - Google Patents

Semiconductor device having a thin film fieldeffect transistor, liquid crystal display device, and production method thereof Download PDF

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Publication number
TW499763B
TW499763B TW090105088A TW90105088A TW499763B TW 499763 B TW499763 B TW 499763B TW 090105088 A TW090105088 A TW 090105088A TW 90105088 A TW90105088 A TW 90105088A TW 499763 B TW499763 B TW 499763B
Authority
TW
Taiwan
Prior art keywords
film
semiconductor film
manufacturing
semiconductor
effect transistor
Prior art date
Application number
TW090105088A
Other languages
English (en)
Chinese (zh)
Inventor
Masami Hayshi
Masanao Kobayshi
Original Assignee
Mitsubishi Electric Corp
Seiko Epson Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp, Seiko Epson Corp filed Critical Mitsubishi Electric Corp
Application granted granted Critical
Publication of TW499763B publication Critical patent/TW499763B/zh

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Classifications

    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
    • H10D30/031—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT]
    • H10D30/0312—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT] characterised by the gate electrodes
    • H10D30/0314—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT] characterised by the gate electrodes of lateral top-gate TFTs comprising only a single gate
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
    • H10D30/031—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT]
    • H10D30/0321—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT] comprising silicon, e.g. amorphous silicon or polysilicon
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6704—Thin-film transistors [TFT] having supplementary regions or layers in the thin films or in the insulated bulk substrates for controlling properties of the device
    • H10D30/6725—Thin-film transistors [TFT] having supplementary regions or layers in the thin films or in the insulated bulk substrates for controlling properties of the device having supplementary regions or layers for improving the flatness of the device

Landscapes

  • Physics & Mathematics (AREA)
  • Nonlinear Science (AREA)
  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Mathematical Physics (AREA)
  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • General Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Thin Film Transistor (AREA)
  • Recrystallisation Techniques (AREA)
  • Liquid Crystal (AREA)
TW090105088A 2000-03-07 2001-03-06 Semiconductor device having a thin film fieldeffect transistor, liquid crystal display device, and production method thereof TW499763B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2000062066A JP4057215B2 (ja) 2000-03-07 2000-03-07 半導体装置の製造方法および液晶表示装置の製造方法

Publications (1)

Publication Number Publication Date
TW499763B true TW499763B (en) 2002-08-21

Family

ID=18582125

Family Applications (1)

Application Number Title Priority Date Filing Date
TW090105088A TW499763B (en) 2000-03-07 2001-03-06 Semiconductor device having a thin film fieldeffect transistor, liquid crystal display device, and production method thereof

Country Status (5)

Country Link
US (1) US6812071B2 (enExample)
JP (1) JP4057215B2 (enExample)
KR (1) KR100411321B1 (enExample)
CN (1) CN1196200C (enExample)
TW (1) TW499763B (enExample)

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JP4831885B2 (ja) * 2001-04-27 2011-12-07 株式会社半導体エネルギー研究所 半導体装置の作製方法
US7067849B2 (en) 2001-07-17 2006-06-27 Lg Electronics Inc. Diode having high brightness and method thereof
US6949395B2 (en) * 2001-10-22 2005-09-27 Oriol, Inc. Method of making diode having reflective layer
US7148520B2 (en) 2001-10-26 2006-12-12 Lg Electronics Inc. Diode having vertical structure and method of manufacturing the same
KR100831227B1 (ko) * 2001-12-17 2008-05-21 삼성전자주식회사 다결정 규소를 이용한 박막 트랜지스터의 제조 방법
JP4271413B2 (ja) 2002-06-28 2009-06-03 株式会社半導体エネルギー研究所 半導体装置の作製方法
JP2005276944A (ja) * 2004-03-23 2005-10-06 Sharp Corp 半導体デバイス、その製造方法および製造装置
JP2006190897A (ja) * 2005-01-07 2006-07-20 Sharp Corp 半導体デバイス、その製造方法および製造装置
US20080237593A1 (en) * 2005-01-07 2008-10-02 Junichiro Nakayama Semiconductor Device, Method of Fabricating the Same, and Apparatus for Fabricating the Same
US7531904B2 (en) * 2005-04-26 2009-05-12 Mitsui Mining & Smelting Co., Ltd. Al-Ni-B alloy wiring material and element structure using the same
JP4732219B2 (ja) * 2006-04-03 2011-07-27 相模サーボ株式会社 高純度シリコン製造方法及び高純度シリコン製造装置
JP4656441B2 (ja) * 2007-03-29 2011-03-23 株式会社日本製鋼所 薄膜の結晶化方法および結晶化装置
US7781076B2 (en) * 2007-06-26 2010-08-24 Eastman Kodak Company Heteropyrene-based semiconductor materials for electronic devices and methods of making the same
CN105097667B (zh) * 2015-06-24 2018-03-30 深圳市华星光电技术有限公司 低温多晶硅tft基板结构的制作方法及低温多晶硅tft基板结构
JP7213726B2 (ja) * 2019-03-13 2023-01-27 東京エレクトロン株式会社 成膜方法及び熱処理装置
CN111584362B (zh) * 2020-05-14 2023-08-22 Tcl华星光电技术有限公司 一种半导体器件制程方法、半导体器件及显示面板

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JPS6046022A (ja) * 1983-08-23 1985-03-12 Sumitomo Electric Ind Ltd イオン注入用基板の前処理方法
JPS62262431A (ja) * 1986-05-08 1987-11-14 Fujitsu Ltd 半導体装置の製造方法
US5332441A (en) * 1991-10-31 1994-07-26 International Business Machines Corporation Apparatus for gettering of particles during plasma processing
JP3065825B2 (ja) * 1992-10-21 2000-07-17 株式会社半導体エネルギー研究所 レーザー処理方法
US5466953A (en) * 1993-05-28 1995-11-14 Santa Barbara Research Center Denuded zone field effect photoconductive detector
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Also Published As

Publication number Publication date
KR100411321B1 (ko) 2003-12-18
CN1312591A (zh) 2001-09-12
KR20010088393A (ko) 2001-09-26
US6812071B2 (en) 2004-11-02
US20010032980A1 (en) 2001-10-25
JP4057215B2 (ja) 2008-03-05
CN1196200C (zh) 2005-04-06
JP2001250776A (ja) 2001-09-14

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