JP3596337B2 - 化合物半導体結晶の製造方法 - Google Patents

化合物半導体結晶の製造方法 Download PDF

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Publication number
JP3596337B2
JP3596337B2 JP6314399A JP6314399A JP3596337B2 JP 3596337 B2 JP3596337 B2 JP 3596337B2 JP 6314399 A JP6314399 A JP 6314399A JP 6314399 A JP6314399 A JP 6314399A JP 3596337 B2 JP3596337 B2 JP 3596337B2
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Japan
Prior art keywords
compound semiconductor
semiconductor crystal
carbon
gas
raw material
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Expired - Lifetime
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JP6314399A
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English (en)
Japanese (ja)
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JPH11335195A (ja
JPH11335195A5 (https=
Inventor
智博 川瀬
真一 澤田
雅美 龍見
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Sumitomo Electric Industries Ltd
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Sumitomo Electric Industries Ltd
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Priority to JP6314399A priority Critical patent/JP3596337B2/ja
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Publication of JPH11335195A5 publication Critical patent/JPH11335195A5/ja
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    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/40—AIIIBV compounds wherein A is B, Al, Ga, In or Tl and B is N, P, As, Sb or Bi
    • C30B29/42—Gallium arsenide
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B11/00—Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method
    • C30B11/04—Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method adding crystallising materials or reactants forming it in situ to the melt
    • C30B11/06—Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method adding crystallising materials or reactants forming it in situ to the melt at least one but not all components of the crystal composition being added
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B11/00—Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method
    • C30B11/04—Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method adding crystallising materials or reactants forming it in situ to the melt
    • C30B11/08—Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method adding crystallising materials or reactants forming it in situ to the melt every component of the crystal composition being added during the crystallisation
    • C30B11/12—Vaporous components, e.g. vapour-liquid-solid-growth

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
JP6314399A 1998-03-25 1999-03-10 化合物半導体結晶の製造方法 Expired - Lifetime JP3596337B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP6314399A JP3596337B2 (ja) 1998-03-25 1999-03-10 化合物半導体結晶の製造方法

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP10-77309 1998-03-25
JP7730998 1998-03-25
JP6314399A JP3596337B2 (ja) 1998-03-25 1999-03-10 化合物半導体結晶の製造方法

Related Child Applications (1)

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JP2004177249A Division JP4096919B2 (ja) 1998-03-25 2004-06-15 化合物半導体結晶の製造方法および化合物半導体結晶

Publications (3)

Publication Number Publication Date
JPH11335195A JPH11335195A (ja) 1999-12-07
JPH11335195A5 JPH11335195A5 (https=) 2004-07-29
JP3596337B2 true JP3596337B2 (ja) 2004-12-02

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Family Applications (2)

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JP6314399A Expired - Lifetime JP3596337B2 (ja) 1998-03-25 1999-03-10 化合物半導体結晶の製造方法
JP2004177249A Expired - Lifetime JP4096919B2 (ja) 1998-03-25 2004-06-15 化合物半導体結晶の製造方法および化合物半導体結晶

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JP2004177249A Expired - Lifetime JP4096919B2 (ja) 1998-03-25 2004-06-15 化合物半導体結晶の製造方法および化合物半導体結晶

Country Status (4)

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US (4) US6273947B1 (https=)
EP (2) EP0947609B1 (https=)
JP (2) JP3596337B2 (https=)
DE (1) DE69914820T2 (https=)

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3596337B2 (ja) * 1998-03-25 2004-12-02 住友電気工業株式会社 化合物半導体結晶の製造方法
CN1543518A (zh) * 2001-07-05 2004-11-03 Axt 以坚固支座、碳掺杂和电阻率控制及温度梯度控制来生长半导体晶体的方法和装置
JP5186733B2 (ja) * 2005-07-29 2013-04-24 住友電気工業株式会社 ＡｌＮ結晶の成長方法
US20080264332A1 (en) * 2007-04-25 2008-10-30 Fareed Sepehry-Fard Method, system, and apparatus for doping and for multi-chamber high-throughput solid-phase epitaxy deposition process
US7566641B2 (en) * 2007-05-09 2009-07-28 Axt, Inc. Low etch pit density (EPD) semi-insulating GaAs wafers
US8361225B2 (en) 2007-05-09 2013-01-29 Axt, Inc. Low etch pit density (EPD) semi-insulating III-V wafers
EP2072645B2 (en) * 2007-12-19 2014-12-24 Schott AG Method for producing a monocrystalline or polycrystalline semiconductor material
JP5110026B2 (ja) * 2009-04-03 2012-12-26 住友電気工業株式会社 Ｉｉｉ−ｖ族化合物半導体結晶の製造方法
JP6411952B2 (ja) 2015-06-09 2018-10-24 信越化学工業株式会社 熱分解窒化ほう素容器の製造方法

Family Cites Families (42)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4083748A (en) 1975-10-30 1978-04-11 Western Electric Company, Inc. Method of forming and growing a single crystal of a semiconductor compound
US4404172A (en) 1981-01-05 1983-09-13 Western Electric Company, Inc. Method and apparatus for forming and growing a single crystal of a semiconductor compound
US4521272A (en) 1981-01-05 1985-06-04 At&T Technologies, Inc. Method for forming and growing a single crystal of a semiconductor compound
JPS5914440B2 (ja) 1981-09-18 1984-04-04 住友電気工業株式会社 ＣａＡｓ単結晶への硼素のド−ピング方法
JPS5954699A (ja) 1982-09-22 1984-03-29 Toshiba Corp 単結晶の製造方法
JP2529934B2 (ja) 1984-02-21 1996-09-04 住友電気工業株式会社 単結晶の製造方法
US5256381A (en) 1984-02-21 1993-10-26 Sumitomo Electric Industries, Ltd. Apparatus for growing single crystals of III-V compound semiconductors
JPS60210599A (ja) * 1984-04-03 1985-10-23 Nec Corp 半絶縁性ＧａＡｓ結晶の成長方法
JPS60264390A (ja) 1984-06-08 1985-12-27 Sumitomo Electric Ind Ltd 単結晶の育成方法
JPS6437833A (en) * 1987-08-03 1989-02-08 Nippon Mining Co Semi-insulating gaas single crystal
JPS6437833U (https=) 1987-09-01 1989-03-07
JPS6479087A (en) 1987-09-21 1989-03-24 Hitachi Cable Gallium arsenide single crystal having low dislocation density and its production
JPH01239089A (ja) 1987-11-30 1989-09-25 Toshiba Corp 化合物半導体単結晶の製造方法及び製造装置
JPH0234597A (ja) * 1988-07-26 1990-02-05 Sumitomo Electric Ind Ltd 水平ブリッジマン法によるＧａＡｓ単結晶の成長方法
JPH0772120B2 (ja) 1988-08-05 1995-08-02 日立電線株式会社 Ｃｒドープ半絶縁性砒化ガリウム結晶の製造方法
JPH08758B2 (ja) 1988-09-08 1996-01-10 日立電線株式会社 クロムドープ半絶縁性ガリウム・ヒ素単結晶の製造方法
US4923561A (en) 1988-09-23 1990-05-08 American Telephone And Telegraph Company Crystal growth method
US5057287A (en) * 1988-11-01 1991-10-15 Sfa, Inc. Liquid encapsulated zone melting crystal growth method and apparatus
JP3122097B2 (ja) 1988-12-20 2001-01-09 富士通株式会社 文書読み上げ制御装置および文書読み上げ方法
US4946544A (en) 1989-02-27 1990-08-07 At&T Bell Laboratories Crystal growth method
US5259916A (en) 1989-06-20 1993-11-09 Texas Instruments Incorporated Process for improved doping of semiconductor crystals
US5186784A (en) 1989-06-20 1993-02-16 Texas Instruments Incorporated Process for improved doping of semiconductor crystals
US4999082A (en) 1989-09-14 1991-03-12 Akzo America Inc. Process for producing monocrystalline group II-IV or group III-V compounds and products thereof
US5131975A (en) 1990-07-10 1992-07-21 The Regents Of The University Of California Controlled growth of semiconductor crystals
JPH04104989A (ja) 1990-08-25 1992-04-07 Sumitomo Electric Ind Ltd 液相エピタキシャル成長方法および装置
US5342475A (en) 1991-06-07 1994-08-30 The Furukawa Electric Co., Ltd. Method of growing single crystal of compound semiconductor
DE69230962T2 (de) 1991-08-22 2000-10-05 Raytheon Co., Lexington Kristallzüchtungsverfahren zur Herstellung von grossflächigen GaAs und damit hergestellte Infrarot-Fenster/Kuppel
JPH0570288A (ja) 1991-09-09 1993-03-23 Toshiba Corp 化合物半導体単結晶の製造方法及び製造装置
JPH05139886A (ja) 1991-11-21 1993-06-08 Toshiba Corp 砒素化合物単結晶の製造方法
JP2781097B2 (ja) 1992-01-30 1998-07-30 三菱電機株式会社 半導体装置およびその製造方法
JPH06128096A (ja) 1992-10-20 1994-05-10 Furukawa Electric Co Ltd:The 化合物半導体多結晶の製造方法
JPH06239691A (ja) 1993-02-12 1994-08-30 Japan Energy Corp 単結晶の成長方法
JP3015656B2 (ja) * 1994-03-23 2000-03-06 株式会社東芝 半絶縁性ＧａＡｓ単結晶の製造方法および製造装置
WO1995033873A1 (en) * 1994-06-02 1995-12-14 Kabushiki Kaisha Kobe Seiko Sho Compound monocrystal manufacturing method and apparatus
JPH0930887A (ja) 1995-07-17 1997-02-04 Hitachi Cable Ltd 炭素添加ＧａＡｓ結晶の製造方法
JP3201305B2 (ja) * 1996-04-26 2001-08-20 住友電気工業株式会社 Ｉｉｉ−ｖ族化合物半導体結晶の製造方法
JPH09309791A (ja) * 1996-05-22 1997-12-02 Komatsu Electron Metals Co Ltd 半導体単結晶の製造方法
JP4120016B2 (ja) 1996-12-12 2008-07-16 住友電気工業株式会社 半絶縁性ＧａＡｓ単結晶の製造方法
JP3969865B2 (ja) 1997-10-24 2007-09-05 キヤノン株式会社 フッ化物結晶の製造方法
JPH11147785A (ja) 1997-11-11 1999-06-02 Hitachi Cable Ltd 単結晶の製造方法
JP4135239B2 (ja) * 1997-12-26 2008-08-20 住友電気工業株式会社 半導体結晶およびその製造方法ならびに製造装置
JP3596337B2 (ja) * 1998-03-25 2004-12-02 住友電気工業株式会社 化合物半導体結晶の製造方法

Also Published As

Publication number Publication date
USRE40662E1 (en) 2009-03-17
EP0947609B1 (en) 2004-02-18
EP1428912A2 (en) 2004-06-16
EP1428912A3 (en) 2004-06-23
USRE42279E1 (en) 2011-04-12
DE69914820T2 (de) 2004-07-29
EP1428912A9 (en) 2004-09-08
JPH11335195A (ja) 1999-12-07
US6485563B2 (en) 2002-11-26
EP1428912B1 (en) 2014-11-05
DE69914820D1 (de) 2004-03-25
EP0947609A3 (en) 2002-02-06
US6273947B1 (en) 2001-08-14
JP4096919B2 (ja) 2008-06-04
US20010006040A1 (en) 2001-07-05
EP0947609A2 (en) 1999-10-06
JP2004256392A (ja) 2004-09-16

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