JP3580366B2 - 熱伝導性シリコーン組成物及び半導体装置 - Google Patents

熱伝導性シリコーン組成物及び半導体装置 Download PDF

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JP3580366B2
JP3580366B2 JP2001133895A JP2001133895A JP3580366B2 JP 3580366 B2 JP3580366 B2 JP 3580366B2 JP 2001133895 A JP2001133895 A JP 2001133895A JP 2001133895 A JP2001133895 A JP 2001133895A JP 3580366 B2 JP3580366 B2 JP 3580366B2
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component
group
package
carbon atoms
heat
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JP2002327116A (ja
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邦弘 山田
憲一 磯部
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Shin Etsu Chemical Co Ltd
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Priority to JP2001133895A priority Critical patent/JP3580366B2/ja
Priority to US10/133,312 priority patent/US6649258B2/en
Priority to EP20020253010 priority patent/EP1254924B1/en
Priority to DE2002600630 priority patent/DE60200630T2/de
Priority to TW91109016A priority patent/TWI303261B/zh
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
    • H01L23/36—Selection of materials, or shaping, to facilitate cooling or heating, e.g. heatsinks
    • H01L23/373—Cooling facilitated by selection of materials for the device or materials for thermal expansion adaptation, e.g. carbon
    • H01L23/3737—Organic materials with or without a thermoconductive filler
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08K—Use of inorganic or non-macromolecular organic substances as compounding ingredients
    • C08K3/00—Use of inorganic substances as compounding ingredients
    • C08K3/02—Elements
    • C08K3/08—Metals
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08K—Use of inorganic or non-macromolecular organic substances as compounding ingredients
    • C08K3/00—Use of inorganic substances as compounding ingredients
    • C08K3/18—Oxygen-containing compounds, e.g. metal carbonyls
    • C08K3/20—Oxides; Hydroxides
    • C08K3/22—Oxides; Hydroxides of metals
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08L—COMPOSITIONS OF MACROMOLECULAR COMPOUNDS
    • C08L83/00—Compositions of macromolecular compounds obtained by reactions forming in the main chain of the macromolecule a linkage containing silicon with or without sulfur, nitrogen, oxygen or carbon only; Compositions of derivatives of such polymers
    • C08L83/04—Polysiloxanes
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
    • C08G77/00—Macromolecular compounds obtained by reactions forming a linkage containing silicon with or without sulfur, nitrogen, oxygen or carbon in the main chain of the macromolecule
    • C08G77/04—Polysiloxanes
    • C08G77/12—Polysiloxanes containing silicon bound to hydrogen
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
    • C08G77/00—Macromolecular compounds obtained by reactions forming a linkage containing silicon with or without sulfur, nitrogen, oxygen or carbon in the main chain of the macromolecule
    • C08G77/04—Polysiloxanes
    • C08G77/20—Polysiloxanes containing silicon bound to unsaturated aliphatic groups
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08K—Use of inorganic or non-macromolecular organic substances as compounding ingredients
    • C08K3/00—Use of inorganic substances as compounding ingredients
    • C08K3/02—Elements
    • C08K3/08—Metals
    • C08K2003/0812—Aluminium
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08K—Use of inorganic or non-macromolecular organic substances as compounding ingredients
    • C08K3/00—Use of inorganic substances as compounding ingredients
    • C08K3/18—Oxygen-containing compounds, e.g. metal carbonyls
    • C08K3/20—Oxides; Hydroxides
    • C08K3/22—Oxides; Hydroxides of metals
    • C08K2003/2296—Oxides; Hydroxides of metals of zinc
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/10—Bump connectors; Manufacturing methods related thereto
    • H01L2224/15—Structure, shape, material or disposition of the bump connectors after the connecting process
    • H01L2224/16—Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
    • H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
    • H01L2224/321—Disposition
    • H01L2224/32151—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/32221—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/32245—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
    • H01L2224/732—Location after the connecting process
    • H01L2224/73251—Location after the connecting process on different surfaces
    • H01L2224/73253—Bump and layer connectors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/00014—Technical content checked by a classifier the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/26—Web or sheet containing structurally defined element or component, the element or component having a specified physical dimension
    • Y10T428/263—Coating layer not in excess of 5 mils thick or equivalent
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/31504—Composite [nonstructural laminate]
    • Y10T428/31652—Of asbestos
    • Y10T428/31663—As siloxane, silicone or silane

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  • Chemical & Material Sciences (AREA)
  • Health & Medical Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Medicinal Chemistry (AREA)
  • Polymers & Plastics (AREA)
  • Organic Chemistry (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Compositions Of Macromolecular Compounds (AREA)
  • Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)
JP2001133895A 2001-05-01 2001-05-01 熱伝導性シリコーン組成物及び半導体装置 Expired - Lifetime JP3580366B2 (ja)

Priority Applications (5)

Application Number Priority Date Filing Date Title
JP2001133895A JP3580366B2 (ja) 2001-05-01 2001-05-01 熱伝導性シリコーン組成物及び半導体装置
US10/133,312 US6649258B2 (en) 2001-05-01 2002-04-29 Heat conductive silicone composition and semiconductor device
EP20020253010 EP1254924B1 (en) 2001-05-01 2002-04-29 Heat conductive silicone composition and semiconductor device
DE2002600630 DE60200630T2 (de) 2001-05-01 2002-04-29 Wärmeleitende Siliconzusammensetzung und Halbleiteranordnung
TW91109016A TWI303261B (OSRAM) 2001-05-01 2002-04-30

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2001133895A JP3580366B2 (ja) 2001-05-01 2001-05-01 熱伝導性シリコーン組成物及び半導体装置

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JP2002327116A JP2002327116A (ja) 2002-11-15
JP3580366B2 true JP3580366B2 (ja) 2004-10-20

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JP2001133895A Expired - Lifetime JP3580366B2 (ja) 2001-05-01 2001-05-01 熱伝導性シリコーン組成物及び半導体装置

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Country Link
US (1) US6649258B2 (OSRAM)
EP (1) EP1254924B1 (OSRAM)
JP (1) JP3580366B2 (OSRAM)
DE (1) DE60200630T2 (OSRAM)
TW (1) TWI303261B (OSRAM)

Cited By (21)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2005064281A (ja) * 2003-08-14 2005-03-10 Shin Etsu Chem Co Ltd 熱軟化性熱伝導性部材
JP2007150349A (ja) * 2007-02-09 2007-06-14 Shin Etsu Chem Co Ltd 熱軟化性熱伝導性部材
JP2014080546A (ja) * 2012-10-18 2014-05-08 Shin Etsu Chem Co Ltd シリコーン組成物
WO2014181657A1 (ja) 2013-05-07 2014-11-13 信越化学工業株式会社 熱伝導性シリコーン組成物及びその硬化物
KR20160028965A (ko) 2014-09-04 2016-03-14 신에쓰 가가꾸 고교 가부시끼가이샤 실리콘 조성물
US9481851B2 (en) 2012-04-24 2016-11-01 Shin-Etsu Chemical Co., Ltd. Thermally-curable heat-conductive silicone grease composition
US9698077B2 (en) 2013-01-22 2017-07-04 Shin-Etsu Chemical Co., Ltd. Heat conductive silicone composition based on combination of components, heat conductive layer, and semiconductor device
US9969919B2 (en) 2013-09-20 2018-05-15 Shin-Etsu Chemical Co., Ltd. Silicone composition and method for manufacturing heat-conductive silicone composition
US10023741B2 (en) 2013-05-24 2018-07-17 Shin-Etsu Chemical Co., Ltd. Heat-conductive silicone composition
US10689515B2 (en) 2016-01-07 2020-06-23 Shin-Etsu Chemical Co., Ltd. Silicone composition based on both condensation/curing reaction and organic-peroxide curing reaction
KR20200135992A (ko) 2018-03-23 2020-12-04 신에쓰 가가꾸 고교 가부시끼가이샤 실리콘 조성물
US11041072B2 (en) 2014-11-25 2021-06-22 Shin-Etsu Chemical Co., Ltd. One-pack addition curable silicone composition, method for storing same, and method for curing same
KR20210076046A (ko) 2018-10-12 2021-06-23 신에쓰 가가꾸 고교 가부시끼가이샤 부가 경화형 실리콘 조성물 및 그 제조 방법
KR20210135235A (ko) 2019-03-04 2021-11-12 신에쓰 가가꾸 고교 가부시끼가이샤 비경화형 열전도성 실리콘 조성물
KR20210148140A (ko) 2019-04-01 2021-12-07 신에쓰 가가꾸 고교 가부시끼가이샤 열전도성 실리콘 조성물, 그의 제조방법 및 반도체장치
US11319412B2 (en) 2016-10-31 2022-05-03 Dow Toray Co., Ltd. Thermally conductive silicone compound
US11591470B2 (en) 2018-01-15 2023-02-28 Shin-Etsu Chemical Co., Ltd. Silicone composition
WO2023171352A1 (ja) 2022-03-08 2023-09-14 信越化学工業株式会社 熱伝導性付加硬化型シリコーン組成物及びそのシリコーン硬化物
WO2023171353A1 (ja) 2022-03-08 2023-09-14 信越化学工業株式会社 ２液型熱伝導性付加硬化型シリコーン組成物及びそのシリコーン硬化物
US12104113B2 (en) 2019-09-27 2024-10-01 Shin-Etsu Chemical Co., Ltd. Thermally conductive silicone composition, production method thereof, and semiconductor device
US12391860B2 (en) 2019-12-23 2025-08-19 Shin-Etsu Chemical Co., Ltd. Thermal-conductive silicone composition

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US7060747B2 (en) 2001-03-30 2006-06-13 Intel Corporation Chain extension for thermal materials
JP3803058B2 (ja) * 2001-12-11 2006-08-02 信越化学工業株式会社 熱伝導性シリコーン組成物、その硬化物及び敷設方法並びにそれを用いた半導体装置の放熱構造体
JP2004176016A (ja) * 2002-11-29 2004-06-24 Shin Etsu Chem Co Ltd 熱伝導性シリコーン組成物及びその成形体
US6992893B2 (en) * 2003-01-10 2006-01-31 Hewlett-Packard Development Company, L.P. Heat sink attachment
US7645422B2 (en) 2003-04-11 2010-01-12 Therm-O-Disc, Incorporated Vapor sensor and materials therefor
JP2005064291A (ja) * 2003-08-14 2005-03-10 Nissan Motor Co Ltd 絶縁シートおよびこの絶縁シートを用いた半導体装置組立体
JP4154605B2 (ja) * 2004-01-23 2008-09-24 信越化学工業株式会社 熱伝導性シリコーン放熱用組成物及び放熱構造の製造方法
US7119143B2 (en) * 2004-03-04 2006-10-10 Laird Technologies, Inc. Silicone pads for electronics thermal management
TWI385246B (zh) 2004-05-21 2013-02-11 信越化學工業股份有限公司 聚矽氧烷潤滑油組成物
US7211637B2 (en) * 2004-06-03 2007-05-01 Therm-O-Disc, Incorporated Sterically hindered reagents for use in single component siloxane cure systems
JP4687887B2 (ja) * 2004-10-14 2011-05-25 信越化学工業株式会社 熱伝導性シリコーングリース組成物
JP2006143978A (ja) * 2004-11-25 2006-06-08 Ge Toshiba Silicones Co Ltd 熱伝導性シリコーン組成物
US7708947B2 (en) 2005-11-01 2010-05-04 Therm-O-Disc, Incorporated Methods of minimizing temperature cross-sensitivity in vapor sensors and compositions therefor
TWI285675B (en) * 2005-12-16 2007-08-21 Foxconn Tech Co Ltd Heat conductive grease and semiconductor device
US20070219312A1 (en) * 2006-03-17 2007-09-20 Jennifer Lynn David Silicone adhesive composition and method for preparing the same
EP1878767A1 (en) * 2006-07-12 2008-01-16 Shin-Etsu Chemical Co., Ltd. Heat conductive silicone grease composition and cured product thereof
US8012420B2 (en) 2006-07-18 2011-09-06 Therm-O-Disc, Incorporated Robust low resistance vapor sensor materials
JP2008106185A (ja) * 2006-10-27 2008-05-08 Shin Etsu Chem Co Ltd 熱伝導性シリコーン組成物の接着方法、熱伝導性シリコーン組成物接着用プライマー及び熱伝導性シリコーン組成物の接着複合体の製造方法
US8691390B2 (en) 2007-11-20 2014-04-08 Therm-O-Disc, Incorporated Single-use flammable vapor sensor films
US20090143522A1 (en) * 2007-12-04 2009-06-04 Sea-Fue Wang Thermally Conductive Silicone Composition
US8106119B2 (en) * 2007-12-04 2012-01-31 Sea-Fue Wang Thermally conductive silicone composition
JP2008160126A (ja) * 2007-12-21 2008-07-10 Shin Etsu Chem Co Ltd 電子部品の冷却構造
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US20150008361A1 (en) * 2012-03-02 2015-01-08 Fuji Polymer Industries Co., Ltd. Putty-like heat transfer material and method for producing the same
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US20150259584A1 (en) * 2014-03-11 2015-09-17 Randall D. Lowe, JR. Integrated heat spreader sealants for microelectronic packaging
JP6023737B2 (ja) * 2014-03-18 2016-11-09 信越化学工業株式会社 ウエハ加工体、ウエハ加工用仮接着材、及び薄型ウエハの製造方法
CN106715592A (zh) 2014-09-25 2017-05-24 信越化学工业株式会社 紫外线增稠型导热性硅润滑脂组合物
JP6510315B2 (ja) * 2015-05-14 2019-05-08 デンカ株式会社 熱伝導性グリース用組成物、熱伝導性グリースおよび放熱部材
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CN109072051B (zh) * 2016-03-08 2023-12-26 霍尼韦尔国际公司 相变材料
JP6642145B2 (ja) 2016-03-14 2020-02-05 信越化学工業株式会社 付加一液加熱硬化型熱伝導性シリコーングリース組成物の硬化物の製造方法
JP6874366B2 (ja) * 2016-12-28 2021-05-19 信越化学工業株式会社 シリコーン組成物およびその硬化物
CN110234711B (zh) 2017-01-27 2022-02-11 迈图高新材料日本合同公司 导热性聚硅氧烷组合物
JP6383885B2 (ja) 2017-01-27 2018-08-29 モメンティブ・パフォーマンス・マテリアルズ・ジャパン合同会社 熱伝導性ポリオルガノシロキサン組成物
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