JP3396137B2 - コンデンサおよびその作製方法 - Google Patents

コンデンサおよびその作製方法

Info

Publication number
JP3396137B2
JP3396137B2 JP27453096A JP27453096A JP3396137B2 JP 3396137 B2 JP3396137 B2 JP 3396137B2 JP 27453096 A JP27453096 A JP 27453096A JP 27453096 A JP27453096 A JP 27453096A JP 3396137 B2 JP3396137 B2 JP 3396137B2
Authority
JP
Japan
Prior art keywords
layer
metal
opening
capacitor
metal plate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
JP27453096A
Other languages
English (en)
Japanese (ja)
Other versions
JPH09181258A (ja
Inventor
テリー・ジェイ・ブラバゾン
バディー・エル−カレー
ステュアート・アール・マーティン
マシュー・ジェレミー・ラッタン
カーター・ウェリング・カアンタ
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
International Business Machines Corp
Original Assignee
International Business Machines Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by International Business Machines Corp filed Critical International Business Machines Corp
Publication of JPH09181258A publication Critical patent/JPH09181258A/ja
Application granted granted Critical
Publication of JP3396137B2 publication Critical patent/JP3396137B2/ja
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L28/00—Passive two-terminal components without a potential-jump or surface barrier for integrated circuits; Details thereof; Multistep manufacturing processes therefor
    • H01L28/40—Capacitors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
    • H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
    • H01L21/76895—Local interconnects; Local pads, as exemplified by patent document EP0896365
JP27453096A 1995-10-27 1996-10-17 コンデンサおよびその作製方法 Expired - Fee Related JP3396137B2 (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US08/549450 1995-10-27
US08/549,450 US5708559A (en) 1995-10-27 1995-10-27 Precision analog metal-metal capacitor

Publications (2)

Publication Number Publication Date
JPH09181258A JPH09181258A (ja) 1997-07-11
JP3396137B2 true JP3396137B2 (ja) 2003-04-14

Family

ID=24193081

Family Applications (1)

Application Number Title Priority Date Filing Date
JP27453096A Expired - Fee Related JP3396137B2 (ja) 1995-10-27 1996-10-17 コンデンサおよびその作製方法

Country Status (3)

Country Link
US (2) US5708559A (fr)
EP (1) EP0771022A3 (fr)
JP (1) JP3396137B2 (fr)

Families Citing this family (89)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5926359A (en) * 1996-04-01 1999-07-20 International Business Machines Corporation Metal-insulator-metal capacitor
US6069051A (en) * 1996-06-17 2000-05-30 International Business Machines Corporation Method of producing planar metal-to-metal capacitor for use in integrated circuits
US6115233A (en) * 1996-06-28 2000-09-05 Lsi Logic Corporation Integrated circuit device having a capacitor with the dielectric peripheral region being greater than the dielectric central region
SE510455C2 (sv) * 1997-06-06 1999-05-25 Ericsson Telefon Ab L M Förfarande för att anordna en begravd kondensator och en begravd kondensator anordnad enligt förfarandet
FR2766294B1 (fr) 1997-07-18 2001-01-19 St Microelectronics Sa Procede de fabrication d'une capacite metal-metal au sein d'un circuit integre, et circuit integre correspondant
DE19733736A1 (de) * 1997-08-04 1999-02-25 Siemens Ag Integrierte elektrische Schaltung
US6025244A (en) * 1997-12-04 2000-02-15 Fujitsu Limited Self-aligned patterns by chemical-mechanical polishing particularly suited to the formation of MCM capacitors
JP3322199B2 (ja) * 1998-01-06 2002-09-09 株式会社村田製作所 多層セラミック基板およびその製造方法
TW410402B (en) * 1998-02-06 2000-11-01 Sony Corp Dielectric capacitor and method of manufacturing same, and dielectric memeory using same
US6100155A (en) * 1998-09-10 2000-08-08 Chartered Semiconductor Manufacturing, Ltd. Metal-oxide-metal capacitor for analog devices
US6278153B1 (en) * 1998-10-19 2001-08-21 Nec Corporation Thin film capacitor formed in via
US20010013660A1 (en) 1999-01-04 2001-08-16 Peter Richard Duncombe Beol decoupling capacitor
US6274435B1 (en) 1999-01-04 2001-08-14 Taiwan Semiconductor Manufacturing Company High performance MIM (MIP) IC capacitor process
US6150707A (en) * 1999-01-07 2000-11-21 International Business Machines Corporation Metal-to-metal capacitor having thin insulator
US6346454B1 (en) * 1999-01-12 2002-02-12 Agere Systems Guardian Corp. Method of making dual damascene interconnect structure and metal electrode capacitor
US6180976B1 (en) * 1999-02-02 2001-01-30 Conexant Systems, Inc. Thin-film capacitors and methods for forming the same
US7294544B1 (en) * 1999-02-12 2007-11-13 Taiwan Semiconductor Manufacturing Co., Ltd. Method of making a metal-insulator-metal capacitor in the CMOS process
DE69934975T2 (de) 1999-07-30 2007-12-06 Stmicroelectronics S.R.L., Agrate Brianza Verfahren zur Herstellung von Kondensatorelementen auf einem Halbleitersubstrat
DE19945939A1 (de) * 1999-09-24 2001-04-12 Infineon Technologies Ag Integrierte Halbleiterschaltung mit Kondensatoren exakt vorgegebener Kapazität
US6165891A (en) * 1999-11-22 2000-12-26 Chartered Semiconductor Manufacturing Ltd. Damascene structure with reduced capacitance using a carbon nitride, boron nitride, or boron carbon nitride passivation layer, etch stop layer, and/or cap layer
US6458648B1 (en) 1999-12-17 2002-10-01 Agere Systems Guardian Corp. Method for in-situ removal of side walls in MOM capacitor formation
US6404615B1 (en) * 2000-02-16 2002-06-11 Intarsia Corporation Thin film capacitors
DE10008573A1 (de) * 2000-02-24 2001-09-13 Infineon Technologies Ag Halbleiterbauelement und Herstellungsverfahren
EP1130654A1 (fr) * 2000-03-01 2001-09-05 Infineon Technologies AG Dispositif intégré comportant un condensateur métal-isolation-métal
US6426249B1 (en) 2000-03-16 2002-07-30 International Business Machines Corporation Buried metal dual damascene plate capacitor
US6452251B1 (en) * 2000-03-31 2002-09-17 International Business Machines Corporation Damascene metal capacitor
DE10022655C2 (de) * 2000-04-28 2002-03-07 Infineon Technologies Ag Verfahren zur Herstellung von Kondensatorstrukturen
DE50110941D1 (de) * 2000-04-28 2006-10-19 Infineon Technologies Ag Verfahren zur herstellung eines integrierten kondensators
US6368953B1 (en) * 2000-05-09 2002-04-09 International Business Machines Corporation Encapsulated metal structures for semiconductor devices and MIM capacitors including the same
US6680542B1 (en) * 2000-05-18 2004-01-20 Agere Systems Inc. Damascene structure having a metal-oxide-metal capacitor associated therewith
JP2002009248A (ja) * 2000-06-26 2002-01-11 Oki Electric Ind Co Ltd キャパシタおよびその製造方法
US6437385B1 (en) 2000-06-29 2002-08-20 International Business Machines Corporation Integrated circuit capacitor
US6592942B1 (en) * 2000-07-07 2003-07-15 Asm International N.V. Method for vapour deposition of a film onto a substrate
FR2813145B1 (fr) * 2000-08-18 2002-11-29 St Microelectronics Sa Procede de fabrication d'un condensateur au sein d'un circuit integre, et circuit integre correspondant
US6500724B1 (en) * 2000-08-21 2002-12-31 Motorola, Inc. Method of making semiconductor device having passive elements including forming capacitor electrode and resistor from same layer of material
WO2002029892A2 (fr) 2000-10-03 2002-04-11 Broadcom Corporation Condensateur metallique a haute densite utilisant une interconnexion en cuivre double damascene
US6350649B1 (en) * 2000-10-30 2002-02-26 Samsung Electronics Co., Ltd. Bit line landing pad and borderless contact on bit line stud with etch stop layer and manufacturing method thereof
US6566191B2 (en) 2000-12-05 2003-05-20 International Business Machines Corporation Forming electronic structures having dual dielectric thicknesses and the structure so formed
US6613641B1 (en) 2001-01-17 2003-09-02 International Business Machines Corporation Production of metal insulator metal (MIM) structures using anodizing process
US6576525B2 (en) 2001-03-19 2003-06-10 International Business Machines Corporation Damascene capacitor having a recessed plate
JP3895126B2 (ja) * 2001-04-23 2007-03-22 株式会社東芝 半導体装置の製造方法
US6570753B2 (en) 2001-05-25 2003-05-27 University Of Houston Capacitor and method of storing energy
US6461914B1 (en) * 2001-08-29 2002-10-08 Motorola, Inc. Process for making a MIM capacitor
JP4309608B2 (ja) * 2001-09-12 2009-08-05 株式会社東芝 半導体装置及びその製造方法
US8042132B2 (en) 2002-03-15 2011-10-18 Tvworks, Llc System and method for construction, delivery and display of iTV content
DE10202697A1 (de) * 2002-01-24 2003-08-14 Infineon Technologies Dresden Verfahren zum Herstellen eines Kondensators in einer Dielektrikumschicht
US7703116B1 (en) 2003-07-11 2010-04-20 Tvworks, Llc System and method for construction, delivery and display of iTV applications that blend programming information of on-demand and broadcast service offerings
JP3976601B2 (ja) * 2002-03-28 2007-09-19 株式会社ルネサステクノロジ 半導体装置の製造方法
JP2004015059A (ja) * 2002-06-05 2004-01-15 Texas Instruments Inc 低い電圧係数とヒステリシスを有する高精度アナログ・キャパシタおよびその革新的構成方法
US11070890B2 (en) 2002-08-06 2021-07-20 Comcast Cable Communications Management, Llc User customization of user interfaces for interactive television
US6902981B2 (en) * 2002-10-10 2005-06-07 Chartered Semiconductor Manufacturing Ltd Structure and process for a capacitor and other devices
US6800534B2 (en) * 2002-12-09 2004-10-05 Taiwan Semiconductor Manufacturing Company Method of forming embedded MIM capacitor and zigzag inductor scheme
US7348654B2 (en) * 2002-12-09 2008-03-25 Taiwan Semiconductor Manufacturing Co., Ltd Capacitor and inductor scheme with e-fuse application
KR100486303B1 (ko) 2003-02-05 2005-04-29 삼성전자주식회사 집적 회로용 평판형 캐패시터 및 그의 제조방법
JP2004266005A (ja) * 2003-02-28 2004-09-24 Renesas Technology Corp 半導体装置の製造方法
US11381875B2 (en) 2003-03-14 2022-07-05 Comcast Cable Communications Management, Llc Causing display of user-selectable content types
US6909137B2 (en) * 2003-04-07 2005-06-21 International Business Machines Corporation Method of creating deep trench capacitor using a P+ metal electrode
US6818517B1 (en) 2003-08-29 2004-11-16 Asm International N.V. Methods of depositing two or more layers on a substrate in situ
US8819734B2 (en) * 2003-09-16 2014-08-26 Tvworks, Llc Contextual navigational control for digital television
KR100545202B1 (ko) * 2003-10-06 2006-01-24 동부아남반도체 주식회사 캐패시터 제조 방법
US7352053B2 (en) * 2003-10-29 2008-04-01 Taiwan Semiconductor Manufacturing Company, Ltd. Insulating layer having decreased dielectric constant and increased hardness
JP2005142453A (ja) * 2003-11-10 2005-06-02 Seiko Epson Corp 半導体装置の製造方法及び半導体装置
US6919244B1 (en) 2004-03-10 2005-07-19 Motorola, Inc. Method of making a semiconductor device, and semiconductor device made thereby
US7535079B2 (en) * 2005-06-09 2009-05-19 Freescale Semiconductor, Inc. Semiconductor device comprising passive components
FR2879815A1 (fr) 2004-12-16 2006-06-23 St Microelectronics Sa Fabrication d'un condensateur par depot metallique dans une couche de dielectrique d'interconnexion de circuit integre
FR2884646B1 (fr) * 2005-04-19 2007-09-14 St Microelectronics Sa Procede de fabrication d'un circuit integre comprenant un condensateur tridimensionnel
FR2884645B1 (fr) * 2005-04-19 2007-08-10 St Microelectronics Sa Procede de realisation d'un circuit integre comprenant un condensateur
US7818667B2 (en) 2005-05-03 2010-10-19 Tv Works Llc Verification of semantic constraints in multimedia data and in its announcement, signaling and interchange
TWI277373B (en) * 2005-09-16 2007-03-21 Foxconn Advanced Tech Inc Method of continuous producing flexible printed circuit board
JP5055768B2 (ja) * 2006-01-16 2012-10-24 富士通セミコンダクター株式会社 半導体装置及びその製造方法
US20070205507A1 (en) * 2006-03-01 2007-09-06 Hui-Lin Chang Carbon and nitrogen based cap materials for metal hard mask scheme
US7964470B2 (en) * 2006-03-01 2011-06-21 Taiwan Semiconductor Manufacturing Company, Ltd. Flexible processing method for metal-insulator-metal capacitor formation
US7863663B2 (en) * 2006-04-07 2011-01-04 Micron Technology, Inc. Hybrid electrical contact
JP2006310894A (ja) * 2006-08-21 2006-11-09 Toshiba Corp 半導体装置及びその製造方法
US7608538B2 (en) * 2007-01-05 2009-10-27 International Business Machines Corporation Formation of vertical devices by electroplating
JP5192712B2 (ja) * 2007-03-30 2013-05-08 太陽誘電株式会社 薄膜ｍｉｍキャパシタ及びその製造方法
US9177908B2 (en) * 2007-04-30 2015-11-03 Taiwan Semiconductor Manufacturing Company, Limited Stacked semiconductor capacitor structure
JP2008085350A (ja) * 2007-10-18 2008-04-10 Renesas Technology Corp 半導体集積回路装置の製造方法および半導体集積回路装置
US8445913B2 (en) 2007-10-30 2013-05-21 Spansion Llc Metal-insulator-metal (MIM) device and method of formation thereof
US8536676B2 (en) 2007-12-19 2013-09-17 Lockheed Martin Corporation Corona prevention in high power MMICs
JPWO2012014648A1 (ja) * 2010-07-30 2013-09-12 三洋電機株式会社 基板内蔵用キャパシタ、これを備えたキャパシタ内蔵基板、及び基板内蔵用キャパシタの製造方法
US20130120904A1 (en) * 2010-07-30 2013-05-16 Sanyo Electric Co., Ltd. Substrate-incorporated capacitor, capacitor-incorporating substrate provided with the same, and method for manufacturing substrate-incorporated capacitor
JP2011055015A (ja) * 2010-12-16 2011-03-17 Renesas Electronics Corp 半導体装置
US8476704B2 (en) * 2011-08-19 2013-07-02 Nan Ya Technology Corporation Circuit structure with vertical double gate
US20130328167A1 (en) * 2012-06-06 2013-12-12 International Business Machines Corporation Self-aligned metal-insulator-metal (mim) capacitor
US10880609B2 (en) 2013-03-14 2020-12-29 Comcast Cable Communications, Llc Content event messaging
US10014843B2 (en) * 2013-08-08 2018-07-03 Zhuhai Advanced Chip Carriers & Electronic Substrate Solutions Technologies Co. Ltd. Multilayer electronic structures with embedded filters
US10388564B2 (en) * 2016-01-12 2019-08-20 Micron Technology, Inc. Method for fabricating a memory device having two contacts
US11670580B2 (en) * 2021-08-30 2023-06-06 International Business Machines Corporation Subtractive via etch for MIMCAP

Family Cites Families (33)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3988824A (en) * 1972-05-22 1976-11-02 Hewlett-Packard Company Method for manufacturing thin film circuits
US4153988A (en) * 1977-07-15 1979-05-15 International Business Machines Corporation High performance integrated circuit semiconductor package and method of making
FR2526225B1 (fr) * 1982-04-30 1985-11-08 Radiotechnique Compelec Procede de realisation d'un condensateur integre, et dispositif ainsi obtenu
FR2530077A1 (fr) * 1982-07-09 1984-01-13 Radiotechnique Compelec Procede de realisation de condensateurs integres dans une structure microelectronique
JPS59171157A (ja) * 1983-03-18 1984-09-27 Hitachi Ltd 半導体装置
US4453199A (en) * 1983-06-17 1984-06-05 Avx Corporation Low cost thin film capacitor
US4466177A (en) * 1983-06-30 1984-08-21 International Business Machines Corporation Storage capacitor optimization for one device FET dynamic RAM cell
JPS6018948A (ja) * 1983-07-12 1985-01-31 Nec Corp 半導体集積回路装置
JPS60164724A (ja) * 1984-02-07 1985-08-27 Seiko Epson Corp 電気光学装置
US4571816A (en) * 1984-12-11 1986-02-25 Rca Corporation Method of making a capacitor with standard self-aligned gate process
US4628405A (en) * 1985-08-19 1986-12-09 National Semiconductor Corporation Integrated circuit precision capacitor
US4638400A (en) * 1985-10-24 1987-01-20 General Electric Company Refractory metal capacitor structures, particularly for analog integrated circuit devices
JPS6341049A (ja) * 1986-08-05 1988-02-22 インターナシヨナル・ビジネス・マシーンズ・コーポレーシヨン ヴアイア接続を有する多層回路
NL8701357A (nl) * 1987-06-11 1989-01-02 Philips Nv Halfgeleiderinrichting bevattende een condensator en een begraven passiveringslaag.
JP2517015B2 (ja) * 1987-11-06 1996-07-24 シャープ株式会社 半導体メモリの製造方法
US4959705A (en) * 1988-10-17 1990-09-25 Ford Microelectronics, Inc. Three metal personalization of application specific monolithic microwave integrated circuit
US5162258A (en) * 1988-10-17 1992-11-10 Lemnios Zachary J Three metal personalization of application specific monolithic microwave integrated circuit
US4864464A (en) * 1989-01-09 1989-09-05 Micron Technology, Inc. Low-profile, folded-plate dram-cell capacitor fabricated with two mask steps
US4989053A (en) * 1989-03-27 1991-01-29 Shelton Everett K Nonvolatile process compatible with a digital and analog double level metal MOS process
US4982309A (en) * 1989-07-17 1991-01-01 National Semiconductor Corporation Electrodes for electrical ceramic oxide devices
US5037772A (en) * 1989-12-13 1991-08-06 Texas Instruments Incorporated Method for forming a polysilicon to polysilicon capacitor
US4948747A (en) * 1989-12-18 1990-08-14 Motorola, Inc. Method of making an integrated circuit resistor
JP2932635B2 (ja) * 1990-08-11 1999-08-09 日本電気株式会社 半導体記憶装置
JPH04112563A (ja) * 1990-08-31 1992-04-14 Mitsubishi Electric Corp 半導体基板上容量
US5036020A (en) * 1990-08-31 1991-07-30 Texas Instrument Incorporated Method of fabricating microelectronic device incorporating capacitor having lowered topographical profile
US5208726A (en) * 1992-04-03 1993-05-04 Teledyne Monolithic Microwave Metal-insulator-metal (MIM) capacitor-around-via structure for a monolithic microwave integrated circuit (MMIC) and method of manufacturing same
US5268315A (en) * 1992-09-04 1993-12-07 Tektronix, Inc. Implant-free heterojunction bioplar transistor integrated circuit process
JPH0685193A (ja) * 1992-09-07 1994-03-25 Nec Corp 半導体装置
JPH0685187A (ja) * 1992-09-07 1994-03-25 Nec Corp 半導体記憶装置
US5478772A (en) * 1993-04-02 1995-12-26 Micron Technology, Inc. Method for forming a storage cell capacitor compatible with high dielectric constant materials
JP2550852B2 (ja) * 1993-04-12 1996-11-06 日本電気株式会社 薄膜キャパシタの製造方法
JP3025733B2 (ja) * 1993-07-22 2000-03-27 三洋電機株式会社 半導体集積回路装置
DE69433244T2 (de) * 1993-08-05 2004-07-29 Matsushita Electric Industrial Co., Ltd., Kadoma Herstellungsverfahren für Halbleiterbauelement mit Kondensator von hoher dielektrischer Konstante

Also Published As

Publication number Publication date
US6008083A (en) 1999-12-28
JPH09181258A (ja) 1997-07-11
US5708559A (en) 1998-01-13
EP0771022A2 (fr) 1997-05-02
EP0771022A3 (fr) 1998-08-12

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