FR2526225B1 - Procede de realisation d'un condensateur integre, et dispositif ainsi obtenu - Google Patents

Procede de realisation d'un condensateur integre, et dispositif ainsi obtenu

Info

Publication number
FR2526225B1
FR2526225B1 FR8207535A FR8207535A FR2526225B1 FR 2526225 B1 FR2526225 B1 FR 2526225B1 FR 8207535 A FR8207535 A FR 8207535A FR 8207535 A FR8207535 A FR 8207535A FR 2526225 B1 FR2526225 B1 FR 2526225B1
Authority
FR
France
Prior art keywords
producing
integrated capacitor
capacitor
integrated
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
FR8207535A
Other languages
English (en)
Other versions
FR2526225A1 (fr
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Radiotechnique Compelec RTC SA
Original Assignee
Radiotechnique Compelec RTC SA
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Radiotechnique Compelec RTC SA filed Critical Radiotechnique Compelec RTC SA
Priority to FR8207535A priority Critical patent/FR2526225B1/fr
Priority to US06/479,426 priority patent/US4481283A/en
Priority to DE19833314100 priority patent/DE3314100A1/de
Priority to NL8301461A priority patent/NL8301461A/nl
Priority to GB08311430A priority patent/GB2119570B/en
Priority to JP58074232A priority patent/JPS58200566A/ja
Publication of FR2526225A1 publication Critical patent/FR2526225A1/fr
Application granted granted Critical
Publication of FR2526225B1 publication Critical patent/FR2526225B1/fr
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L28/00—Passive two-terminal components without a potential-jump or surface barrier for integrated circuits; Details thereof; Multistep manufacturing processes therefor
    • H01L28/40—Capacitors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
    • H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
    • H01L21/76886—Modifying permanently or temporarily the pattern or the conductivity of conductive members, e.g. formation of alloys, reduction of contact resistances
    • H01L21/76888—By rendering at least a portion of the conductor non conductive, e.g. oxidation
FR8207535A 1982-04-30 1982-04-30 Procede de realisation d'un condensateur integre, et dispositif ainsi obtenu Expired FR2526225B1 (fr)

Priority Applications (6)

Application Number Priority Date Filing Date Title
FR8207535A FR2526225B1 (fr) 1982-04-30 1982-04-30 Procede de realisation d'un condensateur integre, et dispositif ainsi obtenu
US06/479,426 US4481283A (en) 1982-04-30 1983-03-28 Method of manufacturing an integrated capacitor and device obtained by this method
DE19833314100 DE3314100A1 (de) 1982-04-30 1983-04-19 Verfahren zum herstellen eines integrierten kondensators und eine auf diese weise erhaltene anordnung
NL8301461A NL8301461A (nl) 1982-04-30 1983-04-26 Werkwijze voor het vervaardigen van een geintegreerde kondensator en zo verkregen inrichting.
GB08311430A GB2119570B (en) 1982-04-30 1983-04-27 Integrated capacitor manufacture
JP58074232A JPS58200566A (ja) 1982-04-30 1983-04-28 半導体装置の製造方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR8207535A FR2526225B1 (fr) 1982-04-30 1982-04-30 Procede de realisation d'un condensateur integre, et dispositif ainsi obtenu

Publications (2)

Publication Number Publication Date
FR2526225A1 FR2526225A1 (fr) 1983-11-04
FR2526225B1 true FR2526225B1 (fr) 1985-11-08

Family

ID=9273598

Family Applications (1)

Application Number Title Priority Date Filing Date
FR8207535A Expired FR2526225B1 (fr) 1982-04-30 1982-04-30 Procede de realisation d'un condensateur integre, et dispositif ainsi obtenu

Country Status (6)

Country Link
US (1) US4481283A (fr)
JP (1) JPS58200566A (fr)
DE (1) DE3314100A1 (fr)
FR (1) FR2526225B1 (fr)
GB (1) GB2119570B (fr)
NL (1) NL8301461A (fr)

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US4847732A (en) * 1983-09-15 1989-07-11 Mosaic Systems, Inc. Wafer and method of making same
WO1985003805A1 (fr) * 1984-02-21 1985-08-29 Mosaic Systems, Inc. Tranche monolithique ayant un systeme d'interconnexion comprenant une couche d'interconnexion programmable
FR2575335B1 (fr) * 1984-12-21 1987-06-19 Thomson Csf Element capacitif integre sur une pastille de circuit integre, et procede de realisation de cet element capacitif
US4837520A (en) * 1985-03-29 1989-06-06 Honeywell Inc. Fuse status detection circuit
US4853341A (en) * 1987-03-25 1989-08-01 Mitsubishi Denki Kabushiki Kaisha Process for forming electrodes for semiconductor devices using focused ion beams
GB2208453B (en) * 1987-08-24 1991-11-20 Marconi Electronic Devices Capacitors
US5025304A (en) * 1988-11-29 1991-06-18 Mcnc High density semiconductor structure and method of making the same
US5168078A (en) * 1988-11-29 1992-12-01 Mcnc Method of making high density semiconductor structure
US5098860A (en) * 1990-05-07 1992-03-24 The Boeing Company Method of fabricating high-density interconnect structures having tantalum/tantalum oxide layers
ATE155928T1 (de) * 1990-05-31 1997-08-15 Canon Kk Verfahren zur herstellung einer halbleiterspeicheranordnung mit kondensator
WO1994007266A1 (fr) * 1992-09-23 1994-03-31 Massachusetts Institute Of Technology Liaison programmable en tension a capacite reduite
US5371047A (en) * 1992-10-30 1994-12-06 International Business Machines Corporation Chip interconnection having a breathable etch stop layer
US5470801A (en) * 1993-06-28 1995-11-28 Lsi Logic Corporation Low dielectric constant insulation layer for integrated circuit structure and method of making same
US5472913A (en) * 1994-08-05 1995-12-05 Texas Instruments Incorporated Method of fabricating porous dielectric material with a passivation layer for electronics applications
US5739049A (en) * 1995-08-21 1998-04-14 Hyundai Electronics Industries Co., Ltd. Method for fabricating semiconductor device having a capacitor and a method of forming metal wiring on a semiconductor substrate
US5793076A (en) * 1995-09-21 1998-08-11 Micron Technology, Inc. Scalable high dielectric constant capacitor
US5708559A (en) * 1995-10-27 1998-01-13 International Business Machines Corporation Precision analog metal-metal capacitor
US5801916A (en) * 1995-11-13 1998-09-01 Micron Technology, Inc. Pre-patterned contact fill capacitor for dielectric etch protection
US5631804A (en) 1995-11-13 1997-05-20 Micron Technology, Inc. Contact fill capacitor having a sidewall that connects the upper and lower surfaces of the dielectric and partially surrounds an insulating layer
US5736448A (en) * 1995-12-04 1998-04-07 General Electric Company Fabrication method for thin film capacitors
US5972788A (en) 1996-05-22 1999-10-26 International Business Machines Corporation Method of making flexible interconnections with dual-metal-dual-stud structure
US6069051A (en) * 1996-06-17 2000-05-30 International Business Machines Corporation Method of producing planar metal-to-metal capacitor for use in integrated circuits
KR100267087B1 (en) * 1997-01-07 2000-10-02 Samsung Electronics Co Ltd Manufacturing method of capacitor device
SE520173C2 (sv) * 1997-04-29 2003-06-03 Ericsson Telefon Ab L M Förfarande för tillverkning av en kondensator i en integrerad krets
US5920763A (en) * 1997-08-21 1999-07-06 Micron Technology, Inc. Method and apparatus for improving the structural integrity of stacked capacitors
US6048763A (en) * 1997-08-21 2000-04-11 Micron Technology, Inc. Integrated capacitor bottom electrode with etch stop layer
US6342681B1 (en) * 1997-10-15 2002-01-29 Avx Corporation Surface mount coupler device
KR100275727B1 (ko) * 1998-01-06 2001-01-15 윤종용 반도체 장치의 커패시터 형성방법
US6081021A (en) * 1998-01-15 2000-06-27 International Business Machines Corporation Conductor-insulator-conductor structure
US6025226A (en) * 1998-01-15 2000-02-15 International Business Machines Corporation Method of forming a capacitor and a capacitor formed using the method
US6090656A (en) * 1998-05-08 2000-07-18 Lsi Logic Linear capacitor and process for making same
JP2000003991A (ja) * 1998-06-15 2000-01-07 Mitsubishi Electric Corp 半導体装置およびその製造方法
US6124164A (en) * 1998-09-17 2000-09-26 Micron Technology, Inc. Method of making integrated capacitor incorporating high K dielectric
JP3516593B2 (ja) * 1998-09-22 2004-04-05 シャープ株式会社 半導体装置及びその製造方法
US6323078B1 (en) * 1999-10-14 2001-11-27 Agere Systems Guardian Corp. Method of forming metal oxide metal capacitors using multi-step rapid thermal process and a device formed thereby
US6384468B1 (en) 2000-02-07 2002-05-07 International Business Machines Corporation Capacitor and method for forming same
US6452251B1 (en) 2000-03-31 2002-09-17 International Business Machines Corporation Damascene metal capacitor
US6261917B1 (en) * 2000-05-09 2001-07-17 Chartered Semiconductor Manufacturing Ltd. High-K MOM capacitor
US6486530B1 (en) * 2000-10-16 2002-11-26 Intarsia Corporation Integration of anodized metal capacitors and high temperature deposition capacitors
DE10341059B4 (de) * 2003-09-05 2007-05-31 Infineon Technologies Ag Integrierte Schaltungsanordnung mit Kondensator und Herstellungsverfahren
CN104465629B (zh) * 2013-09-23 2017-06-09 中芯国际集成电路制造(上海)有限公司 无源器件结构及其形成方法

Family Cites Families (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB907666A (fr) * 1900-01-01
DE1920684A1 (de) * 1969-04-23 1970-11-05 Siemens Ag Verfahren zum Herstellen von Aluminium-Aluminiumoxid-Metall-Kondensatoren in integrierten Schaltungen
NL7002117A (fr) * 1970-02-14 1971-08-17
FR2138339B1 (fr) * 1971-05-24 1974-08-19 Radiotechnique Compelec
JPS4884579A (fr) * 1972-02-12 1973-11-09
US3864817A (en) * 1972-06-26 1975-02-11 Sprague Electric Co Method of making capacitor and resistor for monolithic integrated circuits
JPS5290279A (en) * 1976-01-23 1977-07-29 Nippon Telegr & Teleph Corp <Ntt> Mos memory device
JPS6032357B2 (ja) * 1977-03-04 1985-07-27 松下電器産業株式会社 容量素子の製造方法
JPS54158884A (en) * 1978-06-06 1979-12-15 Oki Electric Ind Co Ltd Manufacture of semiconductor device
DE2912439A1 (de) * 1979-03-29 1980-10-16 Standard Elektrik Lorenz Ag Integrierter halbleiterschaltkreis mit integrierten speicherkapazitaeten
US4261772A (en) * 1979-07-06 1981-04-14 American Microsystems, Inc. Method for forming voltage-invariant capacitors for MOS type integrated circuit device utilizing oxidation and reflow techniques
JPS5771162A (en) * 1980-10-22 1982-05-01 Hitachi Ltd Semiconductor device
FR2493045A1 (fr) * 1980-10-23 1982-04-30 Thomson Csf Structure de capacite dans un circuit integre a deux niveaux de metallisation et procede de fabrication

Also Published As

Publication number Publication date
GB8311430D0 (en) 1983-06-02
GB2119570A (en) 1983-11-16
GB2119570B (en) 1985-09-18
NL8301461A (nl) 1983-11-16
DE3314100A1 (de) 1983-11-03
FR2526225A1 (fr) 1983-11-04
JPH0481334B2 (fr) 1992-12-22
JPS58200566A (ja) 1983-11-22
US4481283A (en) 1984-11-06

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Legal Events

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CA Change of address
CD Change of name or company name
ST Notification of lapse