JPS5771162A - Semiconductor device - Google Patents

Semiconductor device

Info

Publication number
JPS5771162A
JPS5771162A JP14696380A JP14696380A JPS5771162A JP S5771162 A JPS5771162 A JP S5771162A JP 14696380 A JP14696380 A JP 14696380A JP 14696380 A JP14696380 A JP 14696380A JP S5771162 A JPS5771162 A JP S5771162A
Authority
JP
Japan
Prior art keywords
layer
film
pattern
capacitor element
capacitor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP14696380A
Other languages
Japanese (ja)
Inventor
Yasunobu Tanizaki
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP14696380A priority Critical patent/JPS5771162A/en
Publication of JPS5771162A publication Critical patent/JPS5771162A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
    • H01L27/06—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration
    • H01L27/0688—Integrated circuits having a three-dimensional layout

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Semiconductor Integrated Circuits (AREA)

Abstract

PURPOSE:To reduce the occupied area of capacitor and to contrive high integration by a method wherein an oxide film is formed on a metal pattern provided on a semiconductor layer in a device manufacturing a compound element on a common substrate and a metal layer is provided at the upper part to compose a capacitor element. CONSTITUTION:An Al anodic oxidation film is used as a dielectric layer for the capacitor element of a linear IC, for example, including bipolar and MOS transistors. For example, an Al pattern 3 is formed on a thick oxide film 2 formed an N type substrate 1 by the first layer Al electrode formation process and an Al2O3 film 4 is formed at about 700Angstrom , for example, by applying anodic oxidation on the surface of the Al pattern 3. Next, an Al layer 6 is formed by opening a hole in a layer film 5 by a predetermined area on the Al2O3 film 4 by a process forming the layer insulation layer 5 and providing the second layer Al and a capacitor element composing the Al layers 3, 6 as electrodes is made. In this way, an element remarkably increased a capacitance value with the same area can be manufactured and integration can be improved.
JP14696380A 1980-10-22 1980-10-22 Semiconductor device Pending JPS5771162A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP14696380A JPS5771162A (en) 1980-10-22 1980-10-22 Semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP14696380A JPS5771162A (en) 1980-10-22 1980-10-22 Semiconductor device

Publications (1)

Publication Number Publication Date
JPS5771162A true JPS5771162A (en) 1982-05-01

Family

ID=15419534

Family Applications (1)

Application Number Title Priority Date Filing Date
JP14696380A Pending JPS5771162A (en) 1980-10-22 1980-10-22 Semiconductor device

Country Status (1)

Country Link
JP (1) JPS5771162A (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2526225A1 (en) * 1982-04-30 1983-11-04 Radiotechnique Compelec METHOD FOR PRODUCING AN INTEGRATED CAPACITOR AND DEVICE THUS OBTAINED
JPS63104364A (en) * 1986-10-21 1988-05-09 Murata Mfg Co Ltd High frequency integrated circuit
US6278172B1 (en) 1998-06-15 2001-08-21 Mitsubishi Denki Kabushiki Kaisha Semiconductor device having high-density capacitor elements and manufacturing method thereof

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2526225A1 (en) * 1982-04-30 1983-11-04 Radiotechnique Compelec METHOD FOR PRODUCING AN INTEGRATED CAPACITOR AND DEVICE THUS OBTAINED
JPS63104364A (en) * 1986-10-21 1988-05-09 Murata Mfg Co Ltd High frequency integrated circuit
JPH0556866B2 (en) * 1986-10-21 1993-08-20 Murata Manufacturing Co
US6278172B1 (en) 1998-06-15 2001-08-21 Mitsubishi Denki Kabushiki Kaisha Semiconductor device having high-density capacitor elements and manufacturing method thereof
US6387751B2 (en) 1998-06-15 2002-05-14 Mitsubishi Denki Kabushiki Kaisha Method of manufacturing semiconductor device having high-density capacitor elements

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