FR2884646B1 - Procede de fabrication d'un circuit integre comprenant un condensateur tridimensionnel - Google Patents

Procede de fabrication d'un circuit integre comprenant un condensateur tridimensionnel

Info

Publication number
FR2884646B1
FR2884646B1 FR0503894A FR0503894A FR2884646B1 FR 2884646 B1 FR2884646 B1 FR 2884646B1 FR 0503894 A FR0503894 A FR 0503894A FR 0503894 A FR0503894 A FR 0503894A FR 2884646 B1 FR2884646 B1 FR 2884646B1
Authority
FR
France
Prior art keywords
manufacturing
integrated circuit
dimensional capacitor
capacitor
dimensional
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
FR0503894A
Other languages
English (en)
Other versions
FR2884646A1 (fr
Inventor
Jean Christophe Giraudin
Sebastien Cremer
Philippe Delpech
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
STMicroelectronics SA
Original Assignee
STMicroelectronics SA
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by STMicroelectronics SA filed Critical STMicroelectronics SA
Priority to FR0503894A priority Critical patent/FR2884646B1/fr
Priority to US11/405,680 priority patent/US7479424B2/en
Publication of FR2884646A1 publication Critical patent/FR2884646A1/fr
Application granted granted Critical
Publication of FR2884646B1 publication Critical patent/FR2884646B1/fr
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L28/00—Passive two-terminal components without a potential-jump or surface barrier for integrated circuits; Details thereof; Multistep manufacturing processes therefor
    • H01L28/40—Capacitors
    • H01L28/60—Electrodes
    • H01L28/82—Electrodes with an enlarged surface, e.g. formed by texturisation
    • H01L28/90—Electrodes with an enlarged surface, e.g. formed by texturisation having vertical extensions
    • H01L28/91—Electrodes with an enlarged surface, e.g. formed by texturisation having vertical extensions made by depositing layers, e.g. by depositing alternating conductive and insulating layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
    • H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
    • H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
    • H01L21/76895—Local interconnects; Local pads, as exemplified by patent document EP0896365
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
    • H01L23/522—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
    • H01L23/5222—Capacitive arrangements or effects of, or between wiring layers
    • H01L23/5223—Capacitor integral with wiring layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L28/00—Passive two-terminal components without a potential-jump or surface barrier for integrated circuits; Details thereof; Multistep manufacturing processes therefor
    • H01L28/40—Capacitors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/66007—Multistep manufacturing processes
    • H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
    • H01L29/66083—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by variation of the electric current supplied or the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched, e.g. two-terminal devices
    • H01L29/66181—Conductor-insulator-semiconductor capacitors, e.g. trench capacitors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Ceramic Engineering (AREA)
  • Semiconductor Integrated Circuits (AREA)
FR0503894A 2005-04-19 2005-04-19 Procede de fabrication d'un circuit integre comprenant un condensateur tridimensionnel Expired - Fee Related FR2884646B1 (fr)

Priority Applications (2)

Application Number Priority Date Filing Date Title
FR0503894A FR2884646B1 (fr) 2005-04-19 2005-04-19 Procede de fabrication d'un circuit integre comprenant un condensateur tridimensionnel
US11/405,680 US7479424B2 (en) 2005-04-19 2006-04-17 Method for fabricating an integrated circuit comprising a three-dimensional capacitor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR0503894A FR2884646B1 (fr) 2005-04-19 2005-04-19 Procede de fabrication d'un circuit integre comprenant un condensateur tridimensionnel

Publications (2)

Publication Number Publication Date
FR2884646A1 FR2884646A1 (fr) 2006-10-20
FR2884646B1 true FR2884646B1 (fr) 2007-09-14

Family

ID=35406272

Family Applications (1)

Application Number Title Priority Date Filing Date
FR0503894A Expired - Fee Related FR2884646B1 (fr) 2005-04-19 2005-04-19 Procede de fabrication d'un circuit integre comprenant un condensateur tridimensionnel

Country Status (2)

Country Link
US (1) US7479424B2 (fr)
FR (1) FR2884646B1 (fr)

Families Citing this family (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE102005038219B4 (de) * 2005-08-12 2008-11-13 Infineon Technologies Ag Integrierte Schaltungsanordnung mit Kondensator in einer Leitbahnlage und Verfahren zum Herstellen derselben
US7608538B2 (en) * 2007-01-05 2009-10-27 International Business Machines Corporation Formation of vertical devices by electroplating
FR2911993A1 (fr) * 2007-01-31 2008-08-01 St Microelectronics Sa Condensateur dans un circuit monolithique
FR2914498A1 (fr) * 2007-04-02 2008-10-03 St Microelectronics Sa Realisation de condensateurs mim a 3 dimensions dans le dernier niveau de metal d'un circuit integre
FR2917231B1 (fr) 2007-06-07 2009-10-02 St Microelectronics Sa Realisation de condensateurs dotes de moyens pour diminuer les contraintes du materiau metallique de son armature inferieure
US8242551B2 (en) * 2009-03-04 2012-08-14 Taiwan Semiconductor Manufacturing Company, Ltd. Metal-insulator-metal structure for system-on-chip technology
US8716100B2 (en) * 2011-08-18 2014-05-06 Taiwan Semiconductor Manufacturing Company, Ltd. Method of fabricating metal-insulator-metal (MIM) capacitor within topmost thick inter-metal dielectric layers
FR3053156B1 (fr) * 2016-06-28 2018-11-16 Stmicroelectronics (Rousset) Sas Composant a faible dispersion dans une puce electronique
US11139367B2 (en) * 2018-10-30 2021-10-05 Taiwan Semiconductor Manufacturing Company, Ltd. High density MIM capacitor structure
US11626475B2 (en) * 2019-06-14 2023-04-11 Intel Corporation Trench capacitor with extended dielectric layer
US11581254B2 (en) * 2020-10-13 2023-02-14 Taiwan Semiconductor Manufacturing Company Limited Three dimensional MIM capacitor having a comb structure and methods of making the same
FR3122415A1 (fr) 2021-04-29 2022-11-04 Thales Micro-commutateur RF à capacité structurée

Family Cites Families (22)

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JP2956482B2 (ja) * 1994-07-29 1999-10-04 日本電気株式会社 半導体記憶装置及びその製造方法
US5576240A (en) * 1994-12-09 1996-11-19 Lucent Technologies Inc. Method for making a metal to metal capacitor
US5708559A (en) * 1995-10-27 1998-01-13 International Business Machines Corporation Precision analog metal-metal capacitor
US6441419B1 (en) * 1998-03-31 2002-08-27 Lsi Logic Corporation Encapsulated-metal vertical-interdigitated capacitor and damascene method of manufacturing same
US6251740B1 (en) * 1998-12-23 2001-06-26 Lsi Logic Corporation Method of forming and electrically connecting a vertical interdigitated metal-insulator-metal capacitor extending between interconnect layers in an integrated circuit
US6249014B1 (en) * 1998-10-01 2001-06-19 Ramtron International Corporation Hydrogen barrier encapsulation techniques for the control of hydrogen induced degradation of ferroelectric capacitors in conjunction with multilevel metal processing for non-volatile integrated circuit memory devices
US6180976B1 (en) * 1999-02-02 2001-01-30 Conexant Systems, Inc. Thin-film capacitors and methods for forming the same
US6611014B1 (en) * 1999-05-14 2003-08-26 Kabushiki Kaisha Toshiba Semiconductor device having ferroelectric capacitor and hydrogen barrier film and manufacturing method thereof
JP2001313379A (ja) * 2000-04-28 2001-11-09 Nec Corp 半導体メモリの製造方法及び容量素子の製造方法
US6344964B1 (en) * 2000-07-14 2002-02-05 International Business Machines Corporation Capacitor having sidewall spacer protecting the dielectric layer
US6750113B2 (en) * 2001-01-17 2004-06-15 International Business Machines Corporation Metal-insulator-metal capacitor in copper
US6646323B2 (en) * 2001-05-04 2003-11-11 Texas Instruments Incorporated Zero mask high density metal/insulator/metal capacitor
KR100420122B1 (ko) * 2001-07-21 2004-03-02 삼성전자주식회사 강유전체 메모리 장치 및 그 제조방법
US6452779B1 (en) * 2002-03-25 2002-09-17 International Business Machines Corporation One-mask metal-insulator-metal capacitor and method for forming same
KR100471164B1 (ko) * 2002-03-26 2005-03-09 삼성전자주식회사 금속-절연체-금속 캐패시터를 갖는 반도체장치 및 그제조방법
US6573587B1 (en) * 2002-05-28 2003-06-03 Oki Electric Industry Co., Ltd. Metal oxide capacitor with hydrogen diffusion blocking covering
JP2004152796A (ja) * 2002-10-28 2004-05-27 Toshiba Corp 半導体装置及びその製造方法
US6713840B1 (en) * 2003-02-27 2004-03-30 Taiwan Semiconductor Manufacturing Company, Ltd. Metal-insulator-metal device structure inserted into a low k material and the method for making same
US6897501B2 (en) * 2003-02-28 2005-05-24 Infineon Technologies Aktiengesellschaft Avoiding shorting in capacitors
US6876027B2 (en) * 2003-04-10 2005-04-05 Taiwan Semiconductor Manufacturing Company Method of forming a metal-insulator-metal capacitor structure in a copper damascene process sequence
US6936539B2 (en) * 2003-09-24 2005-08-30 Micron Technology, Inc. Antireflective coating for use during the manufacture of a semiconductor device
US20050116276A1 (en) * 2003-11-28 2005-06-02 Jing-Horng Gau Metal-insulator-metal (MIM) capacitor and fabrication method for making the same

Also Published As

Publication number Publication date
US7479424B2 (en) 2009-01-20
US20060234464A1 (en) 2006-10-19
FR2884646A1 (fr) 2006-10-20

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Effective date: 20131231