JP3185220B2 - 半導体装置 - Google Patents

半導体装置

Info

Publication number
JP3185220B2
JP3185220B2 JP51529791A JP51529791A JP3185220B2 JP 3185220 B2 JP3185220 B2 JP 3185220B2 JP 51529791 A JP51529791 A JP 51529791A JP 51529791 A JP51529791 A JP 51529791A JP 3185220 B2 JP3185220 B2 JP 3185220B2
Authority
JP
Japan
Prior art keywords
film
semiconductor device
ferroelectric
conductive reaction
electrode
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP51529791A
Other languages
English (en)
Japanese (ja)
Other versions
JPWO1992006498A1 (ja
Inventor
計廣 竹内
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Seiko Epson Corp
Original Assignee
Seiko Epson Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Seiko Epson Corp filed Critical Seiko Epson Corp
Publication of JPWO1992006498A1 publication Critical patent/JPWO1992006498A1/ja
Application granted granted Critical
Publication of JP3185220B2 publication Critical patent/JP3185220B2/ja
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B53/00—Ferroelectric RAM [FeRAM] devices comprising ferroelectric memory capacitors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B69/00—Erasable-and-programmable ROM [EPROM] devices not provided for in groups H10B41/00 - H10B63/00, e.g. ultraviolet erasable-and-programmable ROM [UVEPROM] devices

Landscapes

  • Semiconductor Memories (AREA)
JP51529791A 1990-09-28 1991-09-26 半導体装置 Expired - Lifetime JP3185220B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2-259455 1990-09-28
JP25945590 1990-09-28
PCT/JP1991/001280 WO1992006498A1 (fr) 1990-09-28 1991-09-26 Dispositif a semi-conducteurs

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP2000275535A Division JP3332036B2 (ja) 1990-09-28 2000-09-11 半導体装置

Publications (2)

Publication Number Publication Date
JPWO1992006498A1 JPWO1992006498A1 (ja) 1992-10-01
JP3185220B2 true JP3185220B2 (ja) 2001-07-09

Family

ID=17334303

Family Applications (1)

Application Number Title Priority Date Filing Date
JP51529791A Expired - Lifetime JP3185220B2 (ja) 1990-09-28 1991-09-26 半導体装置

Country Status (7)

Country Link
US (1) US5475248A (enExample)
EP (1) EP0503078B1 (enExample)
JP (1) JP3185220B2 (enExample)
KR (1) KR100266046B1 (enExample)
DE (1) DE69132627T2 (enExample)
TW (1) TW238398B (enExample)
WO (1) WO1992006498A1 (enExample)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8667943B2 (en) 2009-12-03 2014-03-11 Avl List Gmbh Internal combustion engine having a cylinder head and a cylinder block

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JPH098244A (ja) * 1995-06-20 1997-01-10 Yamaha Corp 半導体装置とその製造方法
KR100360150B1 (ko) * 1995-06-30 2003-03-06 주식회사 하이닉스반도체 반도체소자의캐패시터형성방법
JP3417167B2 (ja) * 1995-09-29 2003-06-16 ソニー株式会社 半導体メモリ素子のキャパシタ構造及びその形成方法
KR100200299B1 (ko) * 1995-11-30 1999-06-15 김영환 반도체 소자 캐패시터 형성방법
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KR100200704B1 (ko) * 1996-06-07 1999-06-15 윤종용 강유전체 메모리 장치 및 그 제조 방법
KR100234361B1 (ko) 1996-06-17 1999-12-15 윤종용 강유전체 캐패시터를 구비하는 반도체 메모리장치 및그제조방법
US6027947A (en) * 1996-08-20 2000-02-22 Ramtron International Corporation Partially or completely encapsulated top electrode of a ferroelectric capacitor
US5864932A (en) * 1996-08-20 1999-02-02 Ramtron International Corporation Partially or completely encapsulated top electrode of a ferroelectric capacitor
US5920453A (en) * 1996-08-20 1999-07-06 Ramtron International Corporation Completely encapsulated top electrode of a ferroelectric capacitor
EP0837504A3 (en) * 1996-08-20 1999-01-07 Ramtron International Corporation Partially or completely encapsulated ferroelectric device
JP3385889B2 (ja) * 1996-12-25 2003-03-10 株式会社日立製作所 強誘電体メモリ素子及びその製造方法
KR19980060624A (ko) * 1996-12-31 1998-10-07 김영환 반도체 소자의 캐패시터 제조방법
US5902131A (en) * 1997-05-09 1999-05-11 Ramtron International Corporation Dual-level metalization method for integrated circuit ferroelectric devices
JP3201468B2 (ja) * 1997-05-26 2001-08-20 日本電気株式会社 容量素子及びその製造方法
EP0893832A3 (en) * 1997-07-24 1999-11-03 Matsushita Electronics Corporation Semiconductor device including a capacitor device and method for fabricating the same
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JPH11195753A (ja) * 1997-10-27 1999-07-21 Seiko Epson Corp 半導体装置およびその製造方法
JPH11195711A (ja) 1997-10-27 1999-07-21 Seiko Epson Corp 半導体装置およびその製造方法
JP3165093B2 (ja) * 1997-11-13 2001-05-14 松下電子工業株式会社 半導体装置およびその製造方法
US6320213B1 (en) * 1997-12-19 2001-11-20 Advanced Technology Materials, Inc. Diffusion barriers between noble metal electrodes and metallization layers, and integrated circuit and semiconductor devices comprising same
KR100252854B1 (ko) * 1997-12-26 2000-04-15 김영환 반도체 메모리 장치 및 그 제조방법
US6229167B1 (en) * 1998-03-24 2001-05-08 Rohm Co., Ltd. Semiconductor device and method of manufacturing the same
JP4727012B2 (ja) * 1998-03-24 2011-07-20 ローム株式会社 半導体装置および半導体装置の製造方法
KR100279297B1 (ko) * 1998-06-20 2001-02-01 윤종용 반도체 장치 및 그의 제조 방법
US6249014B1 (en) 1998-10-01 2001-06-19 Ramtron International Corporation Hydrogen barrier encapsulation techniques for the control of hydrogen induced degradation of ferroelectric capacitors in conjunction with multilevel metal processing for non-volatile integrated circuit memory devices
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US6174735B1 (en) 1998-10-23 2001-01-16 Ramtron International Corporation Method of manufacturing ferroelectric memory device useful for preventing hydrogen line degradation
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US6255157B1 (en) 1999-01-27 2001-07-03 International Business Machines Corporation Method for forming a ferroelectric capacitor under the bit line
US6242299B1 (en) 1999-04-01 2001-06-05 Ramtron International Corporation Barrier layer to protect a ferroelectric capacitor after contact has been made to the capacitor electrode
KR100349642B1 (ko) * 1999-06-28 2002-08-22 주식회사 하이닉스반도체 강유전체 메모리 소자 및 그 제조 방법
JP2001068647A (ja) 1999-08-30 2001-03-16 Mitsubishi Electric Corp 半導体装置およびその製造方法
IT1314025B1 (it) 1999-11-10 2002-12-03 St Microelectronics Srl Processo per sigillare selettivamente elementi capacitoriferroelettrici compresi in celle di memorie non volatili integrate su
JP2001135798A (ja) * 1999-11-10 2001-05-18 Nec Corp 強誘電体メモリおよび強誘電体メモリ製造方法
US20050009209A1 (en) * 1999-11-10 2005-01-13 Stmicroelectronics S.R.L. Process for selectively sealing ferroelectric capactive elements incorporated in semiconductor integrated non-volatile memory cells
JP3276351B2 (ja) * 1999-12-13 2002-04-22 松下電器産業株式会社 半導体装置の製造方法
DE10001118A1 (de) * 2000-01-13 2001-07-26 Infineon Technologies Ag Verfahren zur Herstellung einer nicht-flüchtigen DRAM-Speicherzelle
KR100463243B1 (ko) * 2000-06-24 2004-12-29 주식회사 하이닉스반도체 티타늄나이트라이드 확산방지막의 실리콘 플라즈마 처리에따른 캐패시터 하부전극의 실리사이드화를 방지할 수 있는반도체 메모리 소자 제조 방법
JP4006929B2 (ja) * 2000-07-10 2007-11-14 富士通株式会社 半導体装置の製造方法
JP4025829B2 (ja) 2000-09-18 2007-12-26 富士通株式会社 半導体装置及びその製造方法
EP1207558A1 (en) * 2000-11-17 2002-05-22 STMicroelectronics S.r.l. Contact structure for ferroelectric memory device
JP2004522303A (ja) 2001-04-19 2004-07-22 エスティーマイクロエレクトロニクス ソチエタ レスポンサビリタ リミテ 集積された半導体デバイスのためのコンタクト構造
US6492673B1 (en) * 2001-05-22 2002-12-10 Ramtron International Corporation Charge pump or other charge storage capacitor including PZT layer for combined use as encapsulation layer and dielectric layer of ferroelectric capacitor and a method for manufacturing the same
US6900487B2 (en) * 2001-06-29 2005-05-31 Oki Electric Industry Co., Ltd. Wiring layer structure for ferroelectric capacitor
US6762090B2 (en) * 2001-09-13 2004-07-13 Hynix Semiconductor Inc. Method for fabricating a capacitor
JP2003152165A (ja) * 2001-11-15 2003-05-23 Fujitsu Ltd 半導体装置およびその製造方法
US6709971B2 (en) * 2002-01-30 2004-03-23 Intel Corporation Interconnect structures in a semiconductor device and processes of formation
US6710391B2 (en) * 2002-06-26 2004-03-23 Texas Instruments Incorporated Integrated DRAM process/structure using contact pillars
JP2004095861A (ja) * 2002-08-30 2004-03-25 Fujitsu Ltd 半導体装置及びその製造方法
US6621683B1 (en) * 2002-09-19 2003-09-16 Infineon Technologies Aktiengesellschaft Memory cells with improved reliability
EP1501128A1 (en) * 2003-07-23 2005-01-26 STMicroelectronics S.r.l. Three - dimensional ferro-electric memory cell and manufacturing process thereof
US20070009821A1 (en) * 2005-07-08 2007-01-11 Charlotte Cutler Devices containing multi-bit data
JP4778765B2 (ja) * 2005-10-07 2011-09-21 富士通セミコンダクター株式会社 半導体装置及びその製造方法
US8361811B2 (en) 2006-06-28 2013-01-29 Research In Motion Rf, Inc. Electronic component with reactive barrier and hermetic passivation layer
US20080001292A1 (en) * 2006-06-28 2008-01-03 Marina Zelner Hermetic Passivation Layer Structure for Capacitors with Perovskite or Pyrochlore Phase Dielectrics
US9846664B2 (en) 2010-07-09 2017-12-19 Cypress Semiconductor Corporation RFID interface and interrupt
US9092582B2 (en) 2010-07-09 2015-07-28 Cypress Semiconductor Corporation Low power, low pin count interface for an RFID transponder
US8395196B2 (en) 2010-11-16 2013-03-12 International Business Machines Corporation Hydrogen barrier liner for ferro-electric random access memory (FRAM) chip

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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8667943B2 (en) 2009-12-03 2014-03-11 Avl List Gmbh Internal combustion engine having a cylinder head and a cylinder block

Also Published As

Publication number Publication date
KR920702554A (ko) 1992-09-04
EP0503078A4 (en) 1992-11-19
EP0503078A1 (en) 1992-09-16
EP0503078B1 (en) 2001-06-06
DE69132627T2 (de) 2001-10-11
US5475248A (en) 1995-12-12
DE69132627D1 (de) 2001-07-12
TW238398B (enExample) 1995-01-11
WO1992006498A1 (fr) 1992-04-16
KR100266046B1 (ko) 2000-09-15

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