JP2023076716A - 半導体モジュールおよび電子回路 - Google Patents
半導体モジュールおよび電子回路 Download PDFInfo
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- JP2023076716A JP2023076716A JP2023062661A JP2023062661A JP2023076716A JP 2023076716 A JP2023076716 A JP 2023076716A JP 2023062661 A JP2023062661 A JP 2023062661A JP 2023062661 A JP2023062661 A JP 2023062661A JP 2023076716 A JP2023076716 A JP 2023076716A
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- Prior art keywords
- terminal
- conductor layer
- source
- switching
- gate
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- 239000004065 semiconductor Substances 0.000 title claims abstract description 45
- 239000004020 conductor Substances 0.000 claims abstract description 193
- 239000000758 substrate Substances 0.000 claims abstract description 51
- 238000001514 detection method Methods 0.000 claims description 20
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 14
- 229910052802 copper Inorganic materials 0.000 claims description 11
- 239000010949 copper Substances 0.000 claims description 11
- 239000002184 metal Substances 0.000 description 34
- 229910052751 metal Inorganic materials 0.000 description 34
- 229910000679 solder Inorganic materials 0.000 description 32
- 230000000630 rising effect Effects 0.000 description 13
- 238000010586 diagram Methods 0.000 description 12
- 229920005989 resin Polymers 0.000 description 8
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- 238000003825 pressing Methods 0.000 description 6
- 238000005304 joining Methods 0.000 description 5
- 239000000463 material Substances 0.000 description 5
- 238000012544 monitoring process Methods 0.000 description 5
- 239000011889 copper foil Substances 0.000 description 4
- 210000001503 joint Anatomy 0.000 description 4
- 230000003071 parasitic effect Effects 0.000 description 4
- 239000000470 constituent Substances 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 230000005669 field effect Effects 0.000 description 3
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 2
- 239000004734 Polyphenylene sulfide Substances 0.000 description 2
- 238000005452 bending Methods 0.000 description 2
- 239000000919 ceramic Substances 0.000 description 2
- 238000001816 cooling Methods 0.000 description 2
- 230000007423 decrease Effects 0.000 description 2
- 238000003780 insertion Methods 0.000 description 2
- 230000037431 insertion Effects 0.000 description 2
- 238000000034 method Methods 0.000 description 2
- 229920000069 polyphenylene sulfide Polymers 0.000 description 2
- 238000003466 welding Methods 0.000 description 2
- 230000004888 barrier function Effects 0.000 description 1
- 150000001879 copper Chemical class 0.000 description 1
- 238000005520 cutting process Methods 0.000 description 1
- 230000012447 hatching Effects 0.000 description 1
- 229920006015 heat resistant resin Polymers 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- 238000000465 moulding Methods 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 238000007747 plating Methods 0.000 description 1
- LFQCEHFDDXELDD-UHFFFAOYSA-N tetramethyl orthosilicate Chemical compound CO[Si](OC)(OC)OC LFQCEHFDDXELDD-UHFFFAOYSA-N 0.000 description 1
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Classifications
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- H03K17/08—Modifications for protecting switching circuit against overcurrent or overvoltage
- H03K17/081—Modifications for protecting switching circuit against overcurrent or overvoltage without feedback from the output circuit to the control circuit
- H03K17/08104—Modifications for protecting switching circuit against overcurrent or overvoltage without feedback from the output circuit to the control circuit in field-effect transistor switches
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- H03K17/082—Modifications for protecting switching circuit against overcurrent or overvoltage by feedback from the output to the control circuit
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- G01R19/0092—Arrangements for measuring currents or voltages or for indicating presence or sign thereof measuring current only
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Abstract
Description
2 樹脂パッケージ
3 ソース端子
4 センスソース端子
5 ゲート端子
6 ドレイン端子
11 半導体チップ
12 ドレインパッド
13 ソースパッド
14 ゲートパッド
16 ソース用ワイヤ
17 センスソース用ワイヤ
19 MOSFET
22,R1~R4 外部抵抗
31 インバータ回路
32 第1のスイッチングデバイス
33 第2のスイッチングデバイス
34 第3のスイッチングデバイス
35 第4のスイッチングデバイス
40 制御部
41 電源
42 負荷
51 増幅回路
52 第1の切替回路
53 ゲート抵抗
54 第2の切替回路
55 電流遮断抵抗
56 過電流検出回路
57 電流検出用抵抗
58 比較回路
59 電圧監視部
61 半導体モジュール
Tr1~Tr4 スイッチング素子
Di1~Di4 Di1~Di4
Claims (10)
- 第1表面とその反対側の第2表面とを有する絶縁基板と、
前記絶縁基板の第1表面上に配置された複数の第1スイッチング素子と、
前記絶縁基板の第1表面上に配置された複数の第2スイッチング素子と、
前記絶縁基板の第1表面上に配置され、前記複数の第1スイッチング素子のドレイン電極が電気的に接続される第1導体パターンと、
前記絶縁基板の第1表面上に配置され、前記複数の第1スイッチング素子のソース電極と前記複数の第2スイッチング素子のドレイン電極が電気的に接続される第2導体パターンと、
前記絶縁基板の第1表面上に配置され、前記複数の第2スイッチング素子のソース電極が電気的に接続される第3導体パターンとを含む、半導体モジュール。 - 前記複数の第1スイッチング素子は、SiCトランジスタである、請求項1に記載の半導体モジュール。
- 前記複数の第2スイッチング素子は、SiCトランジスタである、請求項2に記載の半導体モジュール。
- 前記第1導体パターンは、銅を含む、請求項3に記載の半導体モジュール。
- 前記第2導体パターンは、銅を含む、請求項4に記載の半導体モジュール。
- 前記複数の第1スイッチング素子と前記複数の第2スイッチング素子によって、インバータ回路が形成されている、請求項5に記載の半導体モジュール。
- 前記第2導体パターンに電気的に接続された出力端子を含む、請求項6に記載の半導体モジュール。
- 前記絶縁基板の第2表面上に配置された放熱板を含む、請求項7に記載の半導体モジュール。
- 請求項8に記載の半導体モジュールと、前記半導体モジュールに接続された過電流検出回路および前記半導体モジュールに接続された過電流保護回路とを備えた、電子回路。
- 前記過電流検出回路は、前記第1スイッチング素子または前記第2スイッチング素子に過電流が流れていることを検出し、
前記過電流保護回路は過電流が検出されたときに、前記第1スイッチング素子または前記第2スイッチング素子に流れる電流を遮断する、請求項9に記載の電子回路。
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