JP4695041B2 - 半導体装置 - Google Patents
半導体装置 Download PDFInfo
- Publication number
- JP4695041B2 JP4695041B2 JP2006217326A JP2006217326A JP4695041B2 JP 4695041 B2 JP4695041 B2 JP 4695041B2 JP 2006217326 A JP2006217326 A JP 2006217326A JP 2006217326 A JP2006217326 A JP 2006217326A JP 4695041 B2 JP4695041 B2 JP 4695041B2
- Authority
- JP
- Japan
- Prior art keywords
- bus bar
- temperature sensor
- semiconductor device
- igbt
- wiring board
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 239000004065 semiconductor Substances 0.000 title claims description 99
- 229910000679 solder Inorganic materials 0.000 claims description 10
- 229910052751 metal Inorganic materials 0.000 description 44
- 239000002184 metal Substances 0.000 description 44
- 238000001514 detection method Methods 0.000 description 11
- 238000005476 soldering Methods 0.000 description 5
- 238000010586 diagram Methods 0.000 description 4
- 239000011347 resin Substances 0.000 description 3
- 229920005989 resin Polymers 0.000 description 3
- 239000000758 substrate Substances 0.000 description 3
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 2
- 239000000853 adhesive Substances 0.000 description 2
- 230000001070 adhesive effect Effects 0.000 description 2
- 238000000605 extraction Methods 0.000 description 2
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 2
- 229910052709 silver Inorganic materials 0.000 description 2
- 239000004332 silver Substances 0.000 description 2
- 238000004088 simulation Methods 0.000 description 2
- 239000004593 Epoxy Substances 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 238000009825 accumulation Methods 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 238000009429 electrical wiring Methods 0.000 description 1
- 230000020169 heat generation Effects 0.000 description 1
- WABPQHHGFIMREM-UHFFFAOYSA-N lead(0) Chemical compound [Pb] WABPQHHGFIMREM-UHFFFAOYSA-N 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 229910052697 platinum Inorganic materials 0.000 description 1
- 230000001172 regenerating effect Effects 0.000 description 1
- 239000000523 sample Substances 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
- H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
- H01L2224/321—Disposition
- H01L2224/32151—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/32221—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/32245—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
- H01L2224/831—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector the layer connector being supplied to the parts to be connected in the bonding apparatus
- H01L2224/83101—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector the layer connector being supplied to the parts to be connected in the bonding apparatus as prepeg comprising a layer connector, e.g. provided in an insulating plate member
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
- H01L2224/8319—Arrangement of the layer connectors prior to mounting
- H01L2224/83192—Arrangement of the layer connectors prior to mounting wherein the layer connectors are disposed only on another item or body to be connected to the semiconductor or solid-state body
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/13—Discrete devices, e.g. 3 terminal devices
- H01L2924/1304—Transistor
- H01L2924/1305—Bipolar Junction Transistor [BJT]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/13—Discrete devices, e.g. 3 terminal devices
- H01L2924/1304—Transistor
- H01L2924/1305—Bipolar Junction Transistor [BJT]
- H01L2924/13055—Insulated gate bipolar transistor [IGBT]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/13—Discrete devices, e.g. 3 terminal devices
- H01L2924/1304—Transistor
- H01L2924/1306—Field-effect transistor [FET]
- H01L2924/13091—Metal-Oxide-Semiconductor Field-Effect Transistor [MOSFET]
Description
また電力用半導体素子としてIGBT素子の以外のその他の任意の電力用半導体素子を使用する場合には、その一面と他面は、上記IGBT素子の上記の各面に対して機能的に対応する面となる。例えばNチャンネルのMOS−FETの場合には、IGBT素子のコレクタは「ドレイン」に対応し、IGBT素子のエミッタは「ソース」に対応する。
12 IGBTモジュール
21 高圧バスバー
22 絶縁膜
23 低圧バスバー
24 出力バスバー
25 第1金属配線板
26 第2金属配線板
402,404 IGBT素子
409,410 ダイオード素子
501 温度センサ
Claims (4)
- 半導体素子と、
前記半導体素子の一面に半田接合されると共に外部端子を有するバスバーと、
前記半導体素子と前記バスバーを半田接合している箇所の前記バスバー上に実装される温度センサと、
を備えることを特徴とする半導体装置。 - 前記バスバーは平板状部材であり、半田接合している前記箇所のバスバー部分の板厚は、その他のバスバー部分の板厚よりも薄いことを特徴とする請求項1記載の半導体装置。
- 前記温度センサが実装されるバスバー部分の表面には凹部が形成されていることを特徴とする請求項1または2記載の半導体装置。
- 前記温度センサが実装されるバスバー部分の表面には凸部が形成されていることを特徴とする請求項1または2記載の半導体装置。
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2006217326A JP4695041B2 (ja) | 2006-08-09 | 2006-08-09 | 半導体装置 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2006217326A JP4695041B2 (ja) | 2006-08-09 | 2006-08-09 | 半導体装置 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2008042091A JP2008042091A (ja) | 2008-02-21 |
JP4695041B2 true JP4695041B2 (ja) | 2011-06-08 |
Family
ID=39176732
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2006217326A Expired - Fee Related JP4695041B2 (ja) | 2006-08-09 | 2006-08-09 | 半導体装置 |
Country Status (1)
Country | Link |
---|---|
JP (1) | JP4695041B2 (ja) |
Families Citing this family (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP5270638B2 (ja) * | 2010-11-01 | 2013-08-21 | 三菱電機株式会社 | Dc/dcコンバータ |
DE202011100820U1 (de) * | 2011-05-17 | 2011-12-01 | Ixys Semiconductor Gmbh | Leistungshalbleiter |
US9136193B2 (en) | 2012-02-13 | 2015-09-15 | Panasonic Intellectual Property Management Co., Ltd. | Semiconductor device and method of manufacturing the same |
JP7322654B2 (ja) | 2019-10-15 | 2023-08-08 | 富士電機株式会社 | 半導体モジュール |
Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH04274357A (ja) * | 1991-03-01 | 1992-09-30 | Fuji Electric Co Ltd | 半導体装置 |
JPH05251632A (ja) * | 1992-03-05 | 1993-09-28 | Fuji Electric Co Ltd | 半導体装置 |
JPH09148523A (ja) * | 1995-11-21 | 1997-06-06 | Toshiba Corp | 半導体装置 |
JPH11317495A (ja) * | 1998-05-06 | 1999-11-16 | Mitsubishi Electric Corp | 絶縁ゲート型バイポーラトランジスタモジュールおよび駆動回路付絶縁ゲート型バイポーラトランジスタモジュール |
JP2002033445A (ja) * | 2000-07-14 | 2002-01-31 | Mitsubishi Electric Corp | パワー素子を含む半導体装置 |
JP2006032369A (ja) * | 2004-07-12 | 2006-02-02 | Toshiba Corp | 電力変換装置 |
-
2006
- 2006-08-09 JP JP2006217326A patent/JP4695041B2/ja not_active Expired - Fee Related
Patent Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH04274357A (ja) * | 1991-03-01 | 1992-09-30 | Fuji Electric Co Ltd | 半導体装置 |
JPH05251632A (ja) * | 1992-03-05 | 1993-09-28 | Fuji Electric Co Ltd | 半導体装置 |
JPH09148523A (ja) * | 1995-11-21 | 1997-06-06 | Toshiba Corp | 半導体装置 |
JPH11317495A (ja) * | 1998-05-06 | 1999-11-16 | Mitsubishi Electric Corp | 絶縁ゲート型バイポーラトランジスタモジュールおよび駆動回路付絶縁ゲート型バイポーラトランジスタモジュール |
JP2002033445A (ja) * | 2000-07-14 | 2002-01-31 | Mitsubishi Electric Corp | パワー素子を含む半導体装置 |
JP2006032369A (ja) * | 2004-07-12 | 2006-02-02 | Toshiba Corp | 電力変換装置 |
Also Published As
Publication number | Publication date |
---|---|
JP2008042091A (ja) | 2008-02-21 |
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