JP7457858B2 - 電子回路 - Google Patents
電子回路 Download PDFInfo
- Publication number
- JP7457858B2 JP7457858B2 JP2023062662A JP2023062662A JP7457858B2 JP 7457858 B2 JP7457858 B2 JP 7457858B2 JP 2023062662 A JP2023062662 A JP 2023062662A JP 2023062662 A JP2023062662 A JP 2023062662A JP 7457858 B2 JP7457858 B2 JP 7457858B2
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- Prior art keywords
- terminal
- electrode
- conductor layer
- source
- switching
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- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 10
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- LFQCEHFDDXELDD-UHFFFAOYSA-N tetramethyl orthosilicate Chemical compound CO[Si](OC)(OC)OC LFQCEHFDDXELDD-UHFFFAOYSA-N 0.000 description 1
Images
Classifications
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- H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
- H03K17/08—Modifications for protecting switching circuit against overcurrent or overvoltage
- H03K17/082—Modifications for protecting switching circuit against overcurrent or overvoltage by feedback from the output to the control circuit
- H03K17/0822—Modifications for protecting switching circuit against overcurrent or overvoltage by feedback from the output to the control circuit in field-effect transistor switches
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
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- H03K17/08—Modifications for protecting switching circuit against overcurrent or overvoltage
- H03K17/081—Modifications for protecting switching circuit against overcurrent or overvoltage without feedback from the output circuit to the control circuit
- H03K17/08104—Modifications for protecting switching circuit against overcurrent or overvoltage without feedback from the output circuit to the control circuit in field-effect transistor switches
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- G—PHYSICS
- G01—MEASURING; TESTING
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- G01R19/00—Arrangements for measuring currents or voltages or for indicating presence or sign thereof
- G01R19/0092—Arrangements for measuring currents or voltages or for indicating presence or sign thereof measuring current only
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- H01L23/31—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape
- H01L23/3107—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape the device being completely enclosed
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- H01L23/373—Cooling facilitated by selection of materials for the device or materials for thermal expansion adaptation, e.g. carbon
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- H02M7/5387—Conversion of dc power input into ac power output without possibility of reversal by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal using semiconductor devices only, e.g. single switched pulse inverters in a bridge configuration
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Description
2 樹脂パッケージ
3 ソース端子
4 センスソース端子
5 ゲート端子
6 ドレイン端子
11 半導体チップ
12 ドレインパッド
13 ソースパッド
14 ゲートパッド
16 ソース用ワイヤ
17 センスソース用ワイヤ
19 MOSFET
22,R1~R4 外部抵抗
31 インバータ回路
32 第1のスイッチングデバイス
33 第2のスイッチングデバイス
34 第3のスイッチングデバイス
35 第4のスイッチングデバイス
40 制御部
41 電源
42 負荷
51 増幅回路
52 第1の切替回路
53 ゲート抵抗
54 第2の切替回路
55 電流遮断抵抗
56 過電流検出回路
57 電流検出用抵抗
58 比較回路
59 電圧監視部
61 半導体モジュール
Tr1~Tr4 スイッチング素子
Di1~Di4 Di1~Di4
Claims (10)
- スイッチングデバイスと、
前記スイッチングデバイスに過電流が流れていることを検出するための過電流検出回路と、
前記過電流検出回路によって過電流が検出されたときに、前記スイッチングデバイスに流れる電流を遮断するための過電流保護回路とを含み、
前記スイッチングデバイスは、
第1電極、第2電極および第3電極を有し、前記第2電極と第3電極との間に電位差を与えた状態で前記第1電極と第2電極との間に駆動電圧を与えることによって、前記第2電極と第3電極との間がオン/オフ制御されるスイッチング素子と、
前記第1電極に接続された第1端子と、
前記オン制御によって流れる電流を出力するための端子であって、前記第2電極に電気的に接続された第2端子と、
前記第3電極に電気的に接続された第3端子と、
前記第2電極に電気的に接続された1つの第4端子と、
前記第4端子と前記第2電極との間の電流経路に介在された所定の大きさの抵抗とを含み、
前記第4端子と前記第2電極とが直接接続されるのではなく、前記第4端子と前記第2電極とが、前記第2端子および前記抵抗を介して接続され、
前記第4端子と前記スイッチング素子とを直接接続するためのワイヤを備えておらず、
前記第4端子が前記過電流検出回路に接続されている、電子回路。 - 前記第2端子と前記第2電極とを接続する導電部材とを含み、
前記抵抗は、前記導電部材を含む、請求項1に記載の電子回路。 - 前記導電部材は、前記第2端子と前記第2電極との間に張られたボンディングワイヤを含む、請求項2に記載の電子回路。
- 前記スイッチング素子、前記第4端子および前記抵抗を封止している樹脂パッケージを含む、請求項1~3のいずれか一項に記載の電子回路。
- 前記第1電極がゲート電極であり、前記第2電極がソース電極であり、前記第3電極がドレイン電極であり、前記第4端子がセンスソース端子である、請求項1~4のいずれか一項に記載の電子回路。
- 前記第1電極がゲート電極であり、前記第2電極がエミッタ電極であり、前記第3電極がコレクタ電極であり、前記第4端子がセンスエミッタ端子である、請求項1~4のいずれか一項に記載の電子回路。
- 前記第1電極がベース電極であり、前記第2電極がエミッタ電極であり、前記第3電極がコレクタ電極であり、前記第4端子がセンスエミッタ端子である、請求項1~4のいずれか一項に記載の電子回路。
- 前記抵抗の抵抗値は、前記第2電極と前記第3電極との間に流れる第1電流が比較的小さいかまたは定格値のときに、前記第1電流が定格値よりも大きいときに比べて、前記抵抗における電圧降下が小さくなるように設定されており、これにより、前記第1電流が比較的小さいかまたは定格値のときに、前記第1電極と前記第2電極との間に供給される電圧の低下が抑制され、スイッチング動作に必要十分な駆動電圧が前記スイッチング素子に与えられる、請求項1に記載の電子回路。
- 前記第1電流をIDとすると、前記抵抗の抵抗値がID×1/100mΩ以上5×ID×1/100mΩ以上に設定されている、請求項8に記載の電子回路。
- 前記スイッチング素子はSiC-MOSFETである請求項5に記載の電子回路。
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