JP2022507783A - 整形dcパルスプラズマ処理装置におけるエッジリング制御のための回路 - Google Patents
整形dcパルスプラズマ処理装置におけるエッジリング制御のための回路 Download PDFInfo
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- 239000000758 substrate Substances 0.000 claims abstract description 233
- 238000000034 method Methods 0.000 claims abstract description 33
- 239000003990 capacitor Substances 0.000 claims description 51
- 238000009616 inductively coupled plasma Methods 0.000 claims description 5
- 239000012212 insulator Substances 0.000 claims 1
- 238000010586 diagram Methods 0.000 abstract description 16
- 150000002500 ions Chemical class 0.000 description 11
- 238000005530 etching Methods 0.000 description 8
- 238000005259 measurement Methods 0.000 description 8
- 230000000694 effects Effects 0.000 description 5
- 239000000919 ceramic Substances 0.000 description 4
- NJPPVKZQTLUDBO-UHFFFAOYSA-N novaluron Chemical compound C1=C(Cl)C(OC(F)(F)C(OC(F)(F)F)F)=CC=C1NC(=O)NC(=O)C1=C(F)C=CC=C1F NJPPVKZQTLUDBO-UHFFFAOYSA-N 0.000 description 4
- 238000001816 cooling Methods 0.000 description 3
- 239000000463 material Substances 0.000 description 3
- 238000000151 deposition Methods 0.000 description 2
- 238000010292 electrical insulation Methods 0.000 description 2
- 239000012530 fluid Substances 0.000 description 2
- 238000010438 heat treatment Methods 0.000 description 2
- 239000002245 particle Substances 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 238000004088 simulation Methods 0.000 description 2
- 235000012431 wafers Nutrition 0.000 description 2
- 238000005452 bending Methods 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 238000010891 electric arc Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 230000006870 function Effects 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- -1 temperature Substances 0.000 description 1
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- H—ELECTRICITY
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- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32623—Mechanical discharge control means
- H01J37/32642—Focus rings
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32082—Radio frequency generated discharge
- H01J37/321—Radio frequency generated discharge the radio frequency energy being inductively coupled to the plasma
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- H—ELECTRICITY
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- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32082—Radio frequency generated discharge
- H01J37/32174—Circuits specially adapted for controlling the RF discharge
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- H01J37/32—Gas-filled discharge tubes
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- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
- H01L21/67063—Apparatus for fluid treatment for etching
- H01L21/67069—Apparatus for fluid treatment for etching for drying etching
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- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
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- H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
- H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
- H01L21/68721—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by edge clamping, e.g. clamping ring
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- H—ELECTRICITY
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
- H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
- H01L21/68735—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by edge profile or support profile
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- H—ELECTRICITY
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- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
- H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
- H01L21/68785—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by the mechanical construction of the susceptor, stage or support
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/04—Means for controlling the discharge
- H01J2237/049—Focusing means
- H01J2237/0492—Lens systems
- H01J2237/04924—Lens systems electrostatic
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/10—Lenses
- H01J2237/12—Lenses electrostatic
- H01J2237/1202—Associated circuits
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/32—Processing objects by plasma generation
- H01J2237/33—Processing objects by plasma generation characterised by the type of processing
- H01J2237/334—Etching
- H01J2237/3343—Problems associated with etching
- H01J2237/3344—Problems associated with etching isotropy
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Abstract
Description
チャンバ本体と、
チャンバ本体内に配置された基板支持アセンブリと、を含み、
基板支持アセンブリが、
基板電極が埋め込まれた基板支持部と、
基板支持部の近傍に配置されたエッジリング部であって、エッジリング電極が埋め込まれたエッジリング部と
を有する本体を有する。
本方法は、基板電圧制御回路によって、基板電極に基板電圧を印加することを含む。本方法は、エッジリング電圧制御回路によって、エッジリング電極にエッジリング電圧を印加することをさらに含む。本方法は、エッジリング電圧制御回路と基板電圧制御回路とを別々に同調させて、エッジリング電圧と基板電圧との間の比を変更することをさらに含む。
Claims (15)
- 基板支持装置であって、
基板に基板電圧を印加するための基板電極が埋め込まれた基板支持部、及び、
前記基板支持部の近傍に配置されたエッジリング部であって、エッジリングにエッジリング電圧を印加するためのエッジリング電極が埋め込まれたエッジリング部
を含む本体と、
前記エッジリング電極に接続されたエッジリング電圧制御回路と、
前記基板電極に接続された基板電圧制御回路と
を備え、
前記エッジリング電圧制御回路と前記基板電圧制御回路とが、前記エッジリング電圧と前記基板電圧との間の電圧差を生成するよう別々に同調されうる、基板支持装置。 - 前記エッジリング電圧制御回路と前記基板電圧制御回路とが同一の回路である、請求項1に記載の装置。
- 前記エッジリング電圧制御回路と前記基板電圧制御回路とが互いに異なっている、請求項1に記載の装置。
- 前記エッジリング部と前記基板支持部との間に配置された絶縁体をさらに含む、請求項1に記載の装置。
- 処理チャンバ装置であって、
チャンバ本体と、
前記チャンバ本体に載置されたリッドと、
前記リッドの上方に配置された誘導結合プラズマ装置と、
前記チャンバ本体内に配置された基板支持アセンブリであって、
基板電圧を印加するための基板電極が埋め込まれた基板支持部、及び、
前記基板支持部の近傍に配置されたエッジリング部であって、エッジリングにエッジリング電圧を印加するためのエッジリング電極が埋め込まれたエッジリング部を含む本体を有する基板支持アセンブリと、
前記エッジリング電極に接続されたエッジリング電圧制御回路と、
前記基板電極に接続された基板電圧制御回路と
を備え、
前記エッジリング電圧制御回路と前記基板電圧制御回路とが、前記エッジリング電圧と前記基板電圧との間の電圧差を生成するよう別々に同調されうる、処理チャンバ装置。 - 前記エッジリング電圧制御回路と前記基板電圧制御回路の両方に並列に接続された第1の整形DCパルス電圧源をさらに含む、請求項1又は5に記載の装置。
- 前記エッジリング電圧制御回路に接続された第1の整形DCパルス電圧源、及び前記基板電圧制御回路に接続された第2の整形DCパルス電圧源をさらに含む、請求項1又は5に記載の装置。
- 前記エッジリング電圧制御回路及び前記基板電圧制御回路のうちの少なくとも1つが、少なくとも1つの可変的な受動素子を含む、請求項1又は5に記載の装置。
- 前記少なくとも1つの可変的な受動素子が、少なくとも1つの整形DCパルス電圧源と、前記エッジリング電極及び前記基板電極のうちの少なくとも1つと、の間に接続された可変キャパシタを含む、請求項8に記載の装置。
- 前記少なくとも1つの可変的な受動素子が、少なくとも1つの整形DCパルス電圧源と、前記エッジリング電極及び前記基板電極のうちの少なくとも1つと、の間に接続された可変インダクタを含む、請求項8に記載の装置。
- 前記少なくとも1つの可変的な受動素子が、少なくとも1つの整形DCパルス電圧源と、前記エッジリング電極及び前記基板電極のうちの少なくとも1つと、の間に接続された、キャパシタと直列に存在する可変インダクタを含む、請求項8に記載の装置。
- 前記キャパシタが、可変キャパシタである、請求項11に記載の装置。
- 前記少なくとも1つの可変的な受動素子が、固定キャパシタと並列に接続され及び第1の抵抗器と直列に接続された可変キャパシタを含み、前記可変キャパシタと前記第1の抵抗器との間の第1の共通端子が、少なくとも1つの整形DCパルス電圧源に接続され、前記可変キャパシタと前記固定キャパシタとの間の第2の共通端子が、前記エッジリング電極と前記基板電極のうちの少なくとも1つに接続される、請求項8に記載の装置。
- 前記少なくとも1つの可変的な受動素子が、前記第1の抵抗器と前記固定キャパシタとの間に直列に接続された第2の抵抗器をさらに含む、請求項13に記載の装置。
- 処理チャンバを稼働させる方法であって、
前記処理チャンバは、
チャンバ本体と、
前記チャンバ本体内に配置された基板支持体と
を含み、
前記基板支持体が、
基板電極が埋め込まれた基板支持部と、
前記基板支持部の近傍に配置されたエッジリング部であって、エッジリング電極が埋め込まれたエッジリング部と
を有する本体を有し、
前記方法が、
基板電圧制御回路によって、前記基板電極に基板電圧を印加することと、
エッジリング電圧制御回路によって、前記エッジリング電極にエッジリング電圧を印加することと、
エッジリング電圧制御回路と基板電圧制御回路とを別々に同調させて、前記エッジリング電圧と前記基板電圧との間に電圧差を生成すること
を含む、方法。
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US16/198,479 | 2018-11-21 | ||
US16/198,479 US11289310B2 (en) | 2018-11-21 | 2018-11-21 | Circuits for edge ring control in shaped DC pulsed plasma process device |
PCT/US2019/051771 WO2020106354A1 (en) | 2018-11-21 | 2019-09-18 | Circuits for edge ring control in shaped dc pulse plasma process device |
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JP2022507783A true JP2022507783A (ja) | 2022-01-18 |
JP7246478B2 JP7246478B2 (ja) | 2023-03-27 |
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US (2) | US11289310B2 (ja) |
JP (1) | JP7246478B2 (ja) |
KR (2) | KR102594606B1 (ja) |
CN (2) | CN118299246A (ja) |
TW (1) | TWI834724B (ja) |
WO (1) | WO2020106354A1 (ja) |
Cited By (1)
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JP7328720B1 (ja) | 2022-04-18 | 2023-08-17 | アダプティブ プラズマ テクノロジー コーポレーション | プラズマエッチングシステム |
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TW202036648A (zh) | 2020-10-01 |
US20220223386A1 (en) | 2022-07-14 |
KR20230151076A (ko) | 2023-10-31 |
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US20200161098A1 (en) | 2020-05-21 |
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