TWI627653B - 使用處理腔室中之調諧電極以調諧電漿分佈之設備及方法 - Google Patents

使用處理腔室中之調諧電極以調諧電漿分佈之設備及方法 Download PDF

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TWI627653B
TWI627653B TW103108454A TW103108454A TWI627653B TW I627653 B TWI627653 B TW I627653B TW 103108454 A TW103108454 A TW 103108454A TW 103108454 A TW103108454 A TW 103108454A TW I627653 B TWI627653 B TW I627653B
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亞尤伯摩哈德Ａ
陳建
班莎阿米古莫
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美商應用材料股份有限公司
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    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
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    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
    • C23C16/505—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using radio frequency discharges
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
    • C23C16/505—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using radio frequency discharges
    • C23C16/509—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using radio frequency discharges using internal electrodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/32091—Radio frequency generated discharge the radio frequency energy being capacitively coupled to the plasma
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/32174—Circuits specially adapted for controlling the RF discharge
    • H01J37/32183—Matching circuits
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/3244—Gas supply means
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32715—Workpiece holder
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32917—Plasma diagnostics
    • H01J37/32935—Monitoring and controlling tubes by information coming from the object and/or discharge
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/32—Processing objects by plasma generation
    • H01J2237/33—Processing objects by plasma generation characterised by the type of processing
    • H01J2237/332—Coating
    • H01J2237/3321—CVD [Chemical Vapor Deposition]

Abstract

本發明之實施例係關於用於在基板之電漿處理期間提高沈積速率及改良電漿分佈之設備。根據實施例，該設備包括一調諧電極，該調諧電極安置在一基板支撐底座中且電氣耦接至一可變電容器。電容經控制以控制耦接至該調諧電極之RF及所得電漿。越過基板之電漿分佈以及所得沈積速率及沈積膜厚度藉由調整在該調諧電極處之電容及阻抗來相應地控制。

Description

使用處理腔室中之調諧電極以調諧電漿分佈之設備及方法
本發明之實施例大體而言係關於用於處理基板之設備及方法。更具體而言，本發明之實施例係關於具有安置在基板支撐底座中以用於提高處理速率及改良中心至邊緣電漿分佈均勻性之調諧電極的電漿處理腔室。
諸如電漿增強化學氣相沈積(plasma enhanced chemical vapor deposition；PECVD)之電漿處理用來沈積材料，諸如基板(諸如半導體晶圓)上之毯覆介電質膜。當前電漿處理腔室及製程之挑戰包括在電漿沈積製程期間控制臨界尺寸均勻性。特定挑戰包括使用當前電漿處理腔室及技術沈積之膜中的基板中心至邊緣厚度均勻性。
因此，需要開發用於在電漿處理期間提高沈積速率及改良沈積之膜之中心至邊緣厚度均勻性的設備及製程。
在本發明之一個實施例中，一種電漿處理設備包含：一腔室主體及一供電氣體分配歧管，該腔室主體及該供電氣體分配歧管封閉一製程空間；一底座，該底座安置在該製程空間中以用於支撐一基板；以及一調諧電極，該調諧電極安置在該底座內且電氣耦接至一可變電容器。
在另一實施例中，一種用於處理一基板之方法包含：使用一RF源為一氣體分配歧管供電，同時使一或多種製程氣體流入一電漿腔室中以在該腔室之一製程空間內形成一電漿；以及藉由使安置在該腔室之一腔室主體內之一基板支撐底座內的一調諧電極之電容變化來控制該電漿。
在又一實施例中，一種用於一電漿處理設備中之基板支撐組件包含：一基板支撐底座；一調諧電極，該調諧電極安置在該基板支撐底座內；以及一可變電容器，該可變電容器電氣耦接至該調諧電極。
100‧‧‧腔室
102‧‧‧腔室主體
103‧‧‧驅動系統
104‧‧‧氣體分配組件
106‧‧‧製程空間
108‧‧‧底座
110‧‧‧基板
112‧‧‧調諧電極
114‧‧‧柄
116‧‧‧氣體入口通道
118‧‧‧氣體分配歧管
120‧‧‧氣流控制器
122‧‧‧RF桿
126‧‧‧RF(射頻)電源
128‧‧‧可變電容器/電容器
130‧‧‧感測器
134‧‧‧系統控制器
138‧‧‧記憶體
210‧‧‧總電流
212‧‧‧最大電流
220‧‧‧總阻抗
222‧‧‧最小阻抗
300A‧‧‧電場分配
300B‧‧‧電場分配
300C‧‧‧電場分配
400A‧‧‧膜厚度
400B‧‧‧膜厚度
400C‧‧‧膜厚度
400D‧‧‧膜厚度
L1‧‧‧電感器
L2‧‧‧第二電感器
為了可詳細理解本發明之上述特徵，可參閱實施例獲得以上簡要概述之本發明之更具體描述，其中一些實施例例示於隨附圖式中。然而，應注意，隨附圖式僅例示出本發明之典型實施例，且因此不應將隨附圖式視為對本發明範圍之限制，因為本發明可允許其他同等有效的實施例。
第1圖為根據本發明之一個實施例之電漿處理設備的示意性橫截面圖。
第2圖為標繪為可變電容器處之總電容之電容百分數之函數的第1圖之調諧電極之總電流及總阻抗的示例性繪 圖。
第3A圖至第3C圖為根據施加至第1圖之腔室中之調諧電極的變動電容之越過基板及底座之電場量值分配的示例性繪圖。
第4A圖至第4D圖為越過使用在電漿沈積處理期間施加至調諧電極之變動電容於第1圖中之腔室中處理的基板之所得膜厚度分配的示例性繪圖。
本發明之實施例係關於用於在基板之電漿處理期間提高沈積速率及改良電漿分佈之設備。根據實施例，設備包括調諧電極，該調諧電極安置在基板支撐底座中且電氣耦接至可變電容器。電容經控制以控制耦接至調諧電極之RF及所得電漿。藉由調整調諧電極處之電容及阻抗來相應地控制越過基板之電漿分佈及所得沈積膜厚度。
第1圖為根據本發明之一個實施例之電漿處理設備的示意性橫截面圖。設備包括腔室100，其中可將一或多個膜沈積在基板110上。腔室包括腔室主體102及氣體分配組件104，該氣體分配組件使氣體均勻地分配至製程空間106中。底座108安置在製程空間內且支撐基板110。底座108包括加熱元件(未展示)。底座108藉由柄114可移動地安置在製程空間中，該柄延伸穿過腔室主體102，其中該柄連接至驅動系統103以用於舉升、降低及/或旋轉底座108。
氣體分配組件104包括氣體入口通道116，該氣體入口通道將氣體自氣流控制器120遞送至氣體分配歧管118 中。氣體分配歧管118包括複數個噴嘴(未展示)，在處理期間氣體混合物經由該等複數個噴嘴注入。
RF(射頻)電源126提供電磁能量以為充當供電電極之氣體分配歧管118供電，以促進在氣體分配歧管118與底座108之間產生電漿。底座108包括調諧電極112，該調諧電極經由RF桿122電氣接地，使得在介於供電氣體分配歧管118與調諧電極112之間的腔室100中產生電場。在一實施例中，調諧電極112包含導電篩孔(mesh)，諸如鋁篩孔或鉬篩孔。
調諧電極112電氣耦接至可變電容器128(諸如可變真空電容器)，且經由電感器L1終止於接地。第二電感器L2並聯地電氣耦接至可變電容器128以提供用於低頻率RF至接地的路徑。另外，感測器130(諸如VI感測器)定位在調諧電極112與可變電容器128之間以用於控制穿過調諧電極112及可變電容器128之電流流量。系統控制器134控制各種組件之功能，該等各種組件諸如RF電源126、驅動系統103及可變電容器128。系統控制器134執行儲存在記憶體138中之系統控制軟體。
因此，經由電漿在供電氣體分配歧管118與調諧電極112之間建立RF路徑。此外，藉由改變可變電容器128之電容，穿過調諧電極112之RF路徑之阻抗亦改變，從而產生耦接至調諧電極112之RF場之改變。因此，可在電漿處理期間越過基板110之表面調變製程空間106中之電漿。
第2圖為標繪為可變電容器128處之總電容之電容 百分數之函數的第1圖之調諧電極112之總電流210及總阻抗220的示例性繪圖。在此實例中可看出，在介於可變電容器128之總電容之約40%與50%之間處達成調諧電極112之最大電流212及對應的最小阻抗222(亦即，諧振)。此歸因於由電感RF桿122、電感器L1及電容器128形成之一系列LC電路之諧振。藉由將電容器128調諧至諧振，可抵消RF桿122之感應阻抗，且最小化此RF回程路徑(亦即，自底座108之頂表面，穿過調諧電極112，且穿過RF桿122)之整體阻抗，從而導致流過調諧電極112之最大可能的電流，且藉此提高沈積速率。在可變電容器128之總電容之較低百分數及較高百分數處，總電流210減小，而對應的總阻抗220增大。因此，可藉由控制可變電容器128處之總電容來調變調諧電極112之所要的電流及總阻抗。
第3A圖至第3C圖為根據施加至第1圖之腔室100中之調諧電極112的變動電容之越過基板110及底座108之電場量值分配的示例性繪圖。第3A圖繪示在耦接至調諧電極112之可變電容器128處的電容介於約50pF與約200pF(亦即，高阻抗)之間的情況下，越過基板110及底座108之電場分配300A。可自此實例看出，電場越過基板110及底座108之表面相當平坦。此係因為，在高阻抗下(在電容性方面)，基板110之阻抗對越過調諧電極112之總阻抗具有相對少的效應。
第3B圖繪示在耦接至調諧電極112之可變電容器128處的電容介於約1000pF與約2500pF之間的情況下，越 過基板110及底座108之電場分配300B。可自此實例看出，與第3A圖中之實例相比，電場在基板110之邊緣及底座108之邊緣處降低，因為電容增大且至調諧電極112的阻抗(仍在電容性方面)降低，且基板110對越過調諧電極112之總阻抗的相對影響增大。
第3C圖繪示在耦接至調諧電極112之可變電容器128處的電容介於約50nF與約150nF(亦即，低阻抗)之間的情況下，越過基板110及底座108之電場分配300C。可自此實例看出，與第3A圖至第3B圖中之實例相比，電場在基板110之邊緣及底座108之邊緣處顯著降低。此係因為在歸因於調諧電極112之底座108中之極低阻抗下，基板110之阻抗對總阻抗比調諧電極具有顯著較高阻抗時具有顯著較大之效應。
自第3A圖至第3C圖中展示出之實例，明顯看出，使電氣耦接至調諧電極112之可變電容器128之電容變化導致越過基板110之表面及底座108之電場之對應的變化。具體而言，增大可變電容器128之電容及穿過調諧電極112之阻抗之對應的減小由於氣體分配歧管118與調諧電極112之間的RF耦接及基板110之阻抗相對於調諧電極112之整體阻抗的效應而導致電場在基板110之邊緣及底座108之邊緣處的減小之量值。此外，因為電場為用於在腔室100中產生電漿之功率驅動者，所以得出結論，增大在基板110之邊緣處之電場之量值亦增大基板110之邊緣處之電漿密度。因此，不僅越過正處理之基板110之表面之電場獲變化，而且越過 基板110之表面之電漿分佈亦藉由使電氣耦接至調諧電極112之可變電容器128之電容變化而獲相應地變化。相應地，沈積在基板110上之所得膜厚度分佈與電漿分佈相互關聯，從而導致具有藉由使電氣耦接至調諧電極112之可變電容器128之電容變化來使沈積膜厚度分佈變化之能力。
第4A圖至第4D圖為越過使用在電漿沈積處理期間施加至調諧電極112之變動電容於腔室中處理的基板110之所得膜厚度分配的示例性繪圖。第4A圖繪示在可變電容器128設定在其最大電容之22%處的情況下越過基板110之膜厚度分配。可自此實例看出，在基板110之邊緣附近之膜厚度400A與基板110之中心處之膜厚度相比較高，且然後在到達真正邊緣之前突然下降至最小水平。
第4B圖繪示在可變電容器128設定在其最大電容之28%處的情況下越過基板110之膜厚度分配。可自此實例看出，藉由增大可變電容器128之電容(亦即，減小阻抗)，膜厚度400B與第4A圖中之實例相比在基板110之邊緣處相對於基板110之中心處之膜厚度降低，且然後朝向基板110之邊緣伸出。
第4C圖繪示在可變電容器128設定在其最大電容之32%處的情況下越過基板110之膜厚度分配。可自此實例看出，藉由進一步增大可變電容器128之電容，膜厚度400C與第4B圖中之實例相比在基板110之邊緣處相對於基板110之中心處之膜厚度進一步降低，且進一步朝向基板110之邊緣伸出。因此，膜厚度400C越過基板110之表面相對均勻。
第4D圖繪示在可變電容器128設定在其最大電容之36%處的情況下越過基板110之膜厚度分配。可自此實例看出，藉由進一步增大可變電容器128之電容，膜厚度400C與第4C圖中之實例相比在基板110之邊緣處相對於基板110之中心處之膜厚度充分地降低。因此，膜厚度400D之分佈自第4A圖中所示之膜厚度400A之邊緣-高、中心-低分佈翻轉為邊緣-低、中心-高分佈。
自第4A圖至第4D圖中所示之實例，明顯看出，使電氣耦接至調諧電極112之可變電容器128之電容變化導致越過基板110之表面之沈積膜厚度之對應的變化。具體而言，如第3A圖至第3C圖中所示增大可變電容器128之電容，以及相應地減小調諧電極112處之阻抗及減小基板110之邊緣處相對於中心之電場量值，導致對應的邊緣膜厚度相對於基板110之中心膜厚度的減小。因此，使耦接至調諧電極112之可變電容器128之電容變化允許控制越過正受處理之基板110之表面之膜厚度分佈(中心至邊緣)。
雖然前述內容針對本發明之實施例，但是可在不脫離本發明之基本範疇的情況下設想本發明之其他及進一步實施例，且本發明之範疇係由以下申請專利範圍決定。

Claims (8)

  1. 一種電漿處理設備，該設備包含：一腔室主體及一氣體分配歧管，該腔室主體及該氣體分配歧管封閉一製程空間，其中該氣體分配歧管可附接到一電源；一底座，該底座安置在該製程空間中，該底座具有一基板支撐表面；以及一調諧電極，該調諧電極安置在該底座內；一感測器，該感測器具有一第一終端及一第二終端，其中該調諧電極直接電氣耦接到該感測器的該第一終端；一可變電容器，該可變電容器具有一第一終端，該可變電容器的該第一終端直接電氣耦接到該感測器的該第二終端；一第一電感器，該第一電感器具有一第一終端及一第二終端，該第一電感器的該第一終端直接電氣耦接到該可變電容器的一第二終端，且該第一電感器的該第二終端電氣接地；及一第二電感器，該第二電感器具有一第一終端及一第二終端，該第二電感器的該第一終端直接電氣耦接到該感測器的該第二終端，且該第二電感器的該第二終端電氣接地，其中該第二電感器直接並聯連接到該第一電感器及該可變電容器。
  2. 如請求項1所述之電漿處理設備，其中該可變電容器耦接至一控制器，該控制器經配置以控制該可變電容器之電容。
  3. 如請求項1所述之電漿處理設備，其中該可變電容器耦接至一控制器，該控制器經配置以控制流過該可變電容器之電流。
  4. 如請求項1所述之電漿處理設備，其中該調諧電極包含一導電篩孔。
  5. 如請求項1所述之電漿處理設備，其中該可變電容器為一可變真空電容器。
  6. 一種用於一電漿處理設備中之基板支撐組件，該基板支撐組件包含：一基板支撐底座；一調諧電極，該調諧電極安置在該基板支撐底座內；一感測器，該感測器具有一第一終端及一第二終端，其中該調諧電極直接電氣耦接到該感測器的該第一終端；一可變電容器，該可變電容器具有一第一終端，該可變電容器的該第一終端直接電氣耦接至該感測器的該第二終端；一第一電感器，該第一電感器具有一第一終端及一第二終端，該第一電感器的該第一終端直接電氣耦接到該可變電 容器的一第二終端，且該第一電感器的該第二終端電氣接地；及一第二電感器，該第二電感器具有一第一終端及一第二終端，該第二電感器的該第一終端直接電氣耦接到該感測器的該第二終端，且該第二電感器的該第二終端電氣接地，其中該第二電感器直接並聯連接到該第一電感器及該可變電容器。
  7. 如請求項6所述之基板支撐組件，其中該可變電容器為一可變真空電容器。
  8. 如請求項6所述之基板支撐組件，其中該調諧電極包含一導電篩孔。
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TW201447967A (zh) 2014-12-16
US10347465B2 (en) 2019-07-09
KR20200098737A (ko) 2020-08-20

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