JP2022125290A - 高効率太陽電池構造体および製造方法 - Google Patents
高効率太陽電池構造体および製造方法 Download PDFInfo
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- 238000004519 manufacturing process Methods 0.000 title abstract description 18
- 238000000034 method Methods 0.000 title description 24
- 238000002161 passivation Methods 0.000 claims abstract description 53
- 239000000758 substrate Substances 0.000 claims abstract description 18
- 238000007669 thermal treatment Methods 0.000 claims abstract description 5
- 229910021417 amorphous silicon Inorganic materials 0.000 claims description 75
- 229910052751 metal Inorganic materials 0.000 claims description 46
- 239000002184 metal Substances 0.000 claims description 46
- 239000012528 membrane Substances 0.000 claims description 35
- 238000010438 heat treatment Methods 0.000 claims description 34
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical group O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 22
- 239000000969 carrier Substances 0.000 claims description 22
- 229910052814 silicon oxide Inorganic materials 0.000 claims description 22
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 claims description 19
- 239000000463 material Substances 0.000 claims description 17
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 claims description 15
- 229910052796 boron Inorganic materials 0.000 claims description 15
- 229910052698 phosphorus Inorganic materials 0.000 claims description 15
- 239000011574 phosphorus Substances 0.000 claims description 15
- 239000002019 doping agent Substances 0.000 claims description 12
- 238000002425 crystallisation Methods 0.000 claims description 11
- 230000008025 crystallization Effects 0.000 claims description 11
- 239000002210 silicon-based material Substances 0.000 claims description 9
- 239000011248 coating agent Substances 0.000 claims description 3
- 238000000576 coating method Methods 0.000 claims description 3
- 238000009792 diffusion process Methods 0.000 claims description 3
- 230000035699 permeability Effects 0.000 claims description 3
- 239000002800 charge carrier Substances 0.000 claims 2
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 claims 1
- 238000002834 transmittance Methods 0.000 claims 1
- 230000006870 function Effects 0.000 abstract description 6
- 238000006243 chemical reaction Methods 0.000 abstract description 4
- 239000000203 mixture Substances 0.000 abstract description 3
- 238000002310 reflectometry Methods 0.000 abstract description 3
- 230000015572 biosynthetic process Effects 0.000 abstract description 2
- 238000005137 deposition process Methods 0.000 abstract description 2
- 239000010410 layer Substances 0.000 description 212
- 235000012431 wafers Nutrition 0.000 description 105
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 71
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 49
- 229910052799 carbon Inorganic materials 0.000 description 49
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 49
- 229910010271 silicon carbide Inorganic materials 0.000 description 42
- 229910052710 silicon Inorganic materials 0.000 description 37
- 239000010703 silicon Substances 0.000 description 37
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 36
- 229910052581 Si3N4 Inorganic materials 0.000 description 22
- 229910021419 crystalline silicon Inorganic materials 0.000 description 22
- 238000000151 deposition Methods 0.000 description 22
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 22
- 238000010521 absorption reaction Methods 0.000 description 21
- 229910052782 aluminium Inorganic materials 0.000 description 20
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 20
- NRTOMJZYCJJWKI-UHFFFAOYSA-N Titanium nitride Chemical compound [Ti]#N NRTOMJZYCJJWKI-UHFFFAOYSA-N 0.000 description 16
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 16
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 description 16
- 229910052760 oxygen Inorganic materials 0.000 description 16
- 239000001301 oxygen Substances 0.000 description 16
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 15
- 229910052739 hydrogen Inorganic materials 0.000 description 15
- 239000001257 hydrogen Substances 0.000 description 15
- -1 phosphorus nitride Chemical class 0.000 description 15
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 14
- 230000008901 benefit Effects 0.000 description 14
- 239000011521 glass Substances 0.000 description 13
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 description 12
- 238000001465 metallisation Methods 0.000 description 10
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 description 9
- 230000008021 deposition Effects 0.000 description 9
- 230000003287 optical effect Effects 0.000 description 9
- OGIDPMRJRNCKJF-UHFFFAOYSA-N titanium oxide Inorganic materials [Ti]=O OGIDPMRJRNCKJF-UHFFFAOYSA-N 0.000 description 9
- 239000006117 anti-reflective coating Substances 0.000 description 8
- 230000006798 recombination Effects 0.000 description 8
- 238000005215 recombination Methods 0.000 description 8
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 7
- 229910052733 gallium Inorganic materials 0.000 description 7
- 229910052757 nitrogen Inorganic materials 0.000 description 7
- YCKRFDGAMUMZLT-UHFFFAOYSA-N Fluorine atom Chemical compound [F] YCKRFDGAMUMZLT-UHFFFAOYSA-N 0.000 description 6
- YVLCGIGKCADMSK-UHFFFAOYSA-N cadmium;oxoantimony Chemical compound [Cd].[Sb]=O YVLCGIGKCADMSK-UHFFFAOYSA-N 0.000 description 6
- AJNVQOSZGJRYEI-UHFFFAOYSA-N digallium;oxygen(2-) Chemical compound [O-2].[O-2].[O-2].[Ga+3].[Ga+3] AJNVQOSZGJRYEI-UHFFFAOYSA-N 0.000 description 6
- 229910052731 fluorine Inorganic materials 0.000 description 6
- 239000011737 fluorine Substances 0.000 description 6
- 229910001195 gallium oxide Inorganic materials 0.000 description 6
- YBMRDBCBODYGJE-UHFFFAOYSA-N germanium oxide Inorganic materials O=[Ge]=O YBMRDBCBODYGJE-UHFFFAOYSA-N 0.000 description 6
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 6
- PVADDRMAFCOOPC-UHFFFAOYSA-N oxogermanium Chemical compound [Ge]=O PVADDRMAFCOOPC-UHFFFAOYSA-N 0.000 description 6
- BPUBBGLMJRNUCC-UHFFFAOYSA-N oxygen(2-);tantalum(5+) Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[Ta+5].[Ta+5] BPUBBGLMJRNUCC-UHFFFAOYSA-N 0.000 description 6
- RVTZCBVAJQQJTK-UHFFFAOYSA-N oxygen(2-);zirconium(4+) Chemical compound [O-2].[O-2].[Zr+4] RVTZCBVAJQQJTK-UHFFFAOYSA-N 0.000 description 6
- 230000008569 process Effects 0.000 description 6
- SKRWFPLZQAAQSU-UHFFFAOYSA-N stibanylidynetin;hydrate Chemical compound O.[Sn].[Sb] SKRWFPLZQAAQSU-UHFFFAOYSA-N 0.000 description 6
- 229910001936 tantalum oxide Inorganic materials 0.000 description 6
- XOLBLPGZBRYERU-UHFFFAOYSA-N tin dioxide Chemical compound O=[Sn]=O XOLBLPGZBRYERU-UHFFFAOYSA-N 0.000 description 6
- 229910001887 tin oxide Inorganic materials 0.000 description 6
- 239000011787 zinc oxide Substances 0.000 description 6
- 229910001928 zirconium oxide Inorganic materials 0.000 description 6
- 150000001875 compounds Chemical class 0.000 description 5
- 239000004020 conductor Substances 0.000 description 4
- 238000010586 diagram Methods 0.000 description 4
- 230000000415 inactivating effect Effects 0.000 description 4
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 description 4
- 229920005591 polysilicon Polymers 0.000 description 4
- 229910021332 silicide Inorganic materials 0.000 description 4
- FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical compound [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 description 4
- 230000000694 effects Effects 0.000 description 3
- 238000009434 installation Methods 0.000 description 3
- 230000003647 oxidation Effects 0.000 description 3
- 238000007254 oxidation reaction Methods 0.000 description 3
- 239000004593 Epoxy Substances 0.000 description 2
- 230000003667 anti-reflective effect Effects 0.000 description 2
- 238000013459 approach Methods 0.000 description 2
- 230000009286 beneficial effect Effects 0.000 description 2
- 238000004590 computer program Methods 0.000 description 2
- 125000003700 epoxy group Chemical group 0.000 description 2
- 230000006872 improvement Effects 0.000 description 2
- 239000012212 insulator Substances 0.000 description 2
- 239000002346 layers by function Substances 0.000 description 2
- 238000004518 low pressure chemical vapour deposition Methods 0.000 description 2
- 238000005457 optimization Methods 0.000 description 2
- 229920000647 polyepoxide Polymers 0.000 description 2
- 239000000523 sample Substances 0.000 description 2
- 230000005641 tunneling Effects 0.000 description 2
- 229910001111 Fine metal Inorganic materials 0.000 description 1
- 239000000370 acceptor Substances 0.000 description 1
- 238000007792 addition Methods 0.000 description 1
- 229910021486 amorphous silicon dioxide Inorganic materials 0.000 description 1
- 238000001505 atmospheric-pressure chemical vapour deposition Methods 0.000 description 1
- AOPJVJYWEDDOBI-UHFFFAOYSA-N azanylidynephosphane Chemical compound P#N AOPJVJYWEDDOBI-UHFFFAOYSA-N 0.000 description 1
- 230000004888 barrier function Effects 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 230000009849 deactivation Effects 0.000 description 1
- 230000008020 evaporation Effects 0.000 description 1
- 238000001704 evaporation Methods 0.000 description 1
- 238000005286 illumination Methods 0.000 description 1
- 230000007246 mechanism Effects 0.000 description 1
- 229910021645 metal ion Inorganic materials 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 229910021424 microcrystalline silicon Inorganic materials 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 239000000615 nonconductor Substances 0.000 description 1
- 230000003071 parasitic effect Effects 0.000 description 1
- 238000005240 physical vapour deposition Methods 0.000 description 1
- 238000007747 plating Methods 0.000 description 1
- 238000004886 process control Methods 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 238000001953 recrystallisation Methods 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 150000003376 silicon Chemical class 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
- 230000001629 suppression Effects 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0224—Electrodes
- H01L31/022408—Electrodes for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/022425—Electrodes for devices characterised by at least one potential jump barrier or surface barrier for solar cells
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- H01L31/02—Details
- H01L31/0216—Coatings
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- H—ELECTRICITY
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- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0216—Coatings
- H01L31/02161—Coatings for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/02167—Coatings for devices characterised by at least one potential jump barrier or surface barrier for solar cells
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- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0216—Coatings
- H01L31/02161—Coatings for devices characterised by at least one potential jump barrier or surface barrier
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- H—ELECTRICITY
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- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0224—Electrodes
- H01L31/022466—Electrodes made of transparent conductive layers, e.g. TCO, ITO layers
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- H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers
- H01L31/072—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN heterojunction type
- H01L31/0745—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN heterojunction type comprising a AIVBIV heterojunction, e.g. Si/Ge, SiGe/Si or Si/SiC solar cells
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- H01L31/1864—Annealing
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- H01L31/186—Particular post-treatment for the devices, e.g. annealing, impurity gettering, short-circuit elimination, recrystallisation
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- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/186—Particular post-treatment for the devices, e.g. annealing, impurity gettering, short-circuit elimination, recrystallisation
- H01L31/1872—Recrystallisation
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- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/1884—Manufacture of transparent electrodes, e.g. TCO, ITO
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- H01L31/042—PV modules or arrays of single PV cells
- H01L31/0445—PV modules or arrays of single PV cells including thin film solar cells, e.g. single thin film a-Si, CIS or CdTe solar cells
- H01L31/046—PV modules composed of a plurality of thin film solar cells deposited on the same substrate
- H01L31/0463—PV modules composed of a plurality of thin film solar cells deposited on the same substrate characterised by special patterning methods to connect the PV cells in a module, e.g. laser cutting of the conductive or active layers
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- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
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- Y02E10/548—Amorphous silicon PV cells
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Abstract
Description
本出願は、2009年4月21日に出願され、出願番号第61/171,194号を割り当てられた、「High-Efficiency Solar Cell Structures and Methods of Manufacture」と題される先願の米国仮出願の利益を主張するものである。該出願は、ここに、参照によりその全体として本明細書に組み込まれる。本発明の全態様が、上述の出願の任意の開示との組合せにおいて利用することができる。
例示的な電池構造体:n型前方部、n型ウェーハまたはp型ウェーハ、p型後方部
・ n型アモルファスシリコン炭化物またはn型多結晶シリコン炭化物。すなわち、リンをドープされたシリコン炭化物、窒素をドープされたシリコン炭化物。
・ n型アモルファスシリコンまたはn型多結晶シリコン。すなわち、リンをドープされたアモルファスシリコン、窒素をドープされたアモルファスシリコン。
・ n型アモルファスダイヤモンド状炭素またはn型多結晶ダイヤモンド状炭素。すなわち、窒素をドープされたダイヤモンド状炭素。
・ p型アモルファスシリコン炭化物またはp型多結晶シリコン炭化物。すなわち、ホウ素をドープされたシリコン炭化物、アルミニウムをドープされたシリコン炭化物、ガリウムをドープされたシリコン炭化物。
・ p型アモルファスシリコンまたはp型多結晶シリコン。すなわち、ホウ素をドープされたシリコン、アルミニウムをドープされたシリコン、ガリウムをドープされたシリコン。
・ p型アモルファスダイヤモンド状炭素またはp型多結晶ダイヤモンド状炭素。すなわち、ホウ素をドープされたダイヤモンド状炭素、アルミニウムをドープされたダイヤモンド状炭素。
・ n型アモルファスシリコン炭化物またはn型多結晶シリコン炭化物。すなわち、リンをドープされたシリコン炭化物、窒素をドープされたシリコン炭化物。
・ n型アモルファスシリコンまたはn型多結晶シリコン。すなわち、リンをドープされたアモルファスシリコン、窒素をドープされたアモルファスシリコン。
・ n型アモルファスダイヤモンド状炭素またはn型多結晶ダイヤモンド状炭素。すなわち、窒素をドープされたダイヤモンド状炭素。
・ p型アモルファスシリコン炭化物またはp型多結晶シリコン炭化物。すなわち、ホウ素をドープされたシリコン炭化物、アルミニウムをドープされたシリコン炭化物、ガリウムをドープされたシリコン炭化物。
・ p型アモルファスシリコンまたはp型多結晶シリコン。すなわち、ホウ素をドープされたシリコン、アルミニウムをドープされたシリコン、ガリウムをドープされたシリコン。
・ p型アモルファスダイヤモンド状炭素またはp型多結晶ダイヤモンド状炭素。すなわち、ホウ素をドープされたダイヤモンド状炭素、アルミニウムをドープされたダイヤモンド状炭素。
・ n型アモルファスシリコン炭化物またはn型多結晶シリコン炭化物。すなわち、リンをドープされたシリコン炭化物、窒素をドープされたシリコン炭化物。
・ n型アモルファスシリコンまたはn型多結晶シリコン。すなわち、リンをドープされたアモルファスシリコン、窒素をドープされたアモルファスシリコン。
・ n型アモルファスダイヤモンド状炭素またはn型多結晶ダイヤモンド状炭素。すなわち、窒素をドープされたダイヤモンド状炭素。
・ p型アモルファスシリコン炭化物またはp型多結晶シリコン炭化物。すなわち、ホウ素をドープされたシリコン炭化物、アルミニウムをドープされたシリコン炭化物、ガリウムをドープされたシリコン炭化物。
・ p型アモルファスシリコンまたはp型多結晶シリコン。すなわち、ホウ素をドープされたシリコン、アルミニウムをドープされたシリコン、ガリウムをドープされたシリコン。
・ p型アモルファスダイヤモンド状炭素またはp型多結晶ダイヤモンド状炭素。すなわち、ホウ素をドープされたダイヤモンド状炭素、アルミニウムをドープされたダイヤモンド状炭素。
・ n型アモルファスシリコン炭化物またはn型多結晶シリコン炭化物。すなわち、リンをドープされたシリコン炭化物、窒素をドープされたシリコン炭化物。
・ n型アモルファスシリコンまたはn型多結晶シリコン。すなわち、リンをドープされたアモルファスシリコン、窒素をドープされたアモルファスシリコン。
・ n型アモルファスダイヤモンド状炭素またはn型多結晶ダイヤモンド状炭素。すなわち、窒素をドープされたダイヤモンド状炭素。
例示的な電池構造体:p型前方部、n型ウェーハまたはp型ウェーハ、n型後方部
・ p型アモルファスシリコン炭化物またはp型多結晶シリコン炭化物。すなわち、ホウ素をドープされたシリコン炭化物、アルミニウムをドープされたシリコン炭化物、ガリウムをドープされたシリコン炭化物。
・ p型アモルファスシリコンまたはp型多結晶シリコン。すなわち、ホウ素をドープされたシリコン、アルミニウムをドープされたシリコン、ガリウムをドープされたシリコン。
・ p型アモルファスダイヤモンド状炭素またはp型多結晶ダイヤモンド状炭素。すなわち、ホウ素をドープされたダイヤモンド状炭素、アルミニウムをドープされたダイヤモンド状炭素。
・ n型アモルファスシリコン炭化物またはn型多結晶シリコン炭化物。すなわち、リンをドープされたシリコン炭化物、窒素をドープされたシリコン炭化物。
・ n型アモルファスシリコンまたはn型多結晶シリコン。すなわち、リンをドープされたアモルファスシリコン、窒素をドープされたアモルファスシリコン。
・ n型アモルファスダイヤモンド状炭素またはn型多結晶ダイヤモンド状炭素。すなわち、窒素をドープされたダイヤモンド状炭素。
・ p型アモルファスシリコン炭化物またはp型多結晶シリコン炭化物。すなわち、ホウ素をドープされたシリコン炭化物、アルミニウムをドープされたシリコン炭化物、ガリウムをドープされたシリコン炭化物。
・ p型アモルファスシリコンまたはp型多結晶シリコン。すなわち、ホウ素をドープされたシリコン、アルミニウムをドープされたシリコン、ガリウムをドープされたシリコン。
・ p型アモルファスダイヤモンド状炭素またはp型多結晶ダイヤモンド状炭素。すなわち、ホウ素をドープされたダイヤモンド状炭素、アルミニウムをドープされたダイヤモンド状炭素。
・ n型アモルファスシリコン炭化物またはn型多結晶シリコン炭化物。すなわち、リンをドープされたシリコン炭化物、窒素をドープされたシリコン炭化物。
・ n型アモルファスシリコンまたはn型多結晶シリコン。すなわち、リンをドープされたアモルファスシリコン、窒素をドープされたアモルファスシリコン。
・ n型アモルファスダイヤモンド状炭素またはn型多結晶ダイヤモンド状炭素。すなわち、窒素をドープされたダイヤモンド状炭素。
・ p型アモルファスシリコン炭化物またはp型多結晶シリコン炭化物。すなわち、ホウ素をドープされたシリコン炭化物、アルミニウムをドープされたシリコン炭化物、ガリウムをドープされたシリコン炭化物。
・ p型アモルファスシリコンまたはp型多結晶シリコン。すなわち、ホウ素をドープされたシリコン、アルミニウムをドープされたシリコン、ガリウムをドープされたシリコン。
・ p型アモルファスダイヤモンド状炭素またはp型多結晶ダイヤモンド状炭素。すなわち、ホウ素をドープされたダイヤモンド状炭素、アルミニウムをドープされたダイヤモンド状炭素。
・ n型アモルファスシリコン炭化物またはn型多結晶シリコン炭化物。すなわち、リンをドープされたシリコン炭化物、窒素をドープされたシリコン炭化物。
・ n型アモルファスシリコンまたはn型多結晶シリコン。すなわち、リンをドープされたアモルファスシリコン、窒素をドープされたアモルファスシリコン。
・ n型アモルファスダイヤモンド状炭素またはn型多結晶ダイヤモンド状炭素。すなわち、窒素をドープされたダイヤモンド状炭素。
・ p型アモルファスシリコン炭化物またはp型多結晶シリコン炭化物。すなわち、ホウ素をドープされたシリコン炭化物、アルミニウムをドープされたシリコン炭化物、ガリウムをドープされたシリコン炭化物。
・ p型アモルファスシリコンまたはp型多結晶シリコン。すなわち、ホウ素をドープされたシリコン、アルミニウムをドープされたシリコン、ガリウムをドープされたシリコン。
・ p型アモルファスダイヤモンド状炭素またはp型多結晶ダイヤモンド状炭素。すなわち、ホウ素をドープされたダイヤモンド状炭素、アルミニウムをドープされたダイヤモンド状炭素。
例示的な電池構造体:代替的な電極構成
161a:埋め込み金属電極を担持するガラスプレートまたは透過性膜。
161:前方金属電極。
162:透過性の導電性膜。
163:電気的に不活性化する導電性膜。
164:電気的に不活性化する界面層。
165:n型結晶シリコンウェーハまたはp型結晶シリコンウェーハ。厚さは、w<300nmの範囲である。
166:電気的に不活性化する界面層。
167:電気的に不活性化する導電性膜。
168:透過性の導電性膜。
169:後方金属電極。
169a:埋め込み金属電極を担持するガラスプレートまたは透過性膜。
171a:埋め込み金属電極を担持するガラスプレートまたは透過性膜。
171:前方金属電極。
172:透過性の導電性膜。
173:電気的に不活性化する導電性膜。
174:電気的に不活性化する界面層。
175:n型結晶シリコンウェーハまたはp型結晶シリコンウェーハ。厚さは、w<300nmの範囲である。
176:電気的に不活性化する界面層。
177:電気的に不活性化する導電性膜。
178:透過性の導電性膜。
179:後方金属電極。
179a:埋め込み金属電極を担持するガラスプレートまたは透過性膜。
製造方法
・ 界面不活性化層xx4およびxx6の蒸着または成長。
・ 層xx3およびxx7の蒸着。
・ 熱処理。
・ 層xx2およびxx8の任意の蒸着(後方部上の良好な内部反射鏡(internal mirror)のための、基本的に3.0未満、2.6未満、2.0未満、1.5未満の屈折率である低反射率層(low reflective index layer)を場合によっては含む)。
・ 金属被覆。
Claims (12)
- 基板と;
前記基板を覆う界面不活性化層であって、前記界面不活性化層を通る短縮された電荷キャリア流路を含む界面不活性化層と;
前記界面不活性化層を覆う不活性化導電性膜であって、前記不活性化導電性膜は、熱処理によって形成された結晶構造を有し、かつ、前記不活性化導電性膜はドーパントを含んでおり、前記ドーパントは、前記熱処理の結果、前記不活性化導電性膜から前記界面不活性化層全体にわたって、少なくとも部分的に拡散し、前記の短縮された電荷キャリア流路を提供している、不活性化導電性膜と;
前記不活性化導電性膜上に施された、電極としての金属被覆と;
を含む太陽電池。 - 前記太陽電池の後方部に良好な内部反射鏡を形成するための、反射防止層、及び/又は、低反射率層を更に含む、請求項1に記載の太陽電池。
- 前記不活性化導電性膜が多結晶膜であり、前記熱処理が、前記不活性化導電性膜の結晶化を開始させるものである、請求項1に記載の太陽電池。
- 前記熱処理が、前記多結晶膜の結晶化と、上昇した光透過率をもたらす、請求項3に記載の太陽電池。
- 前記熱処理が、前記不活性化導電性膜中のドーピング原子を活性化する、請求項1に記載の太陽電池。
- 前記界面不活性化層及び前記不活性化導電性膜は、アモルファスのシリコン含有化合物の熱処理によって形成される、表面を不活性化する界面層と、高透過性を有する高ドープされた多結晶不活性化層に分離した多機能性膜である、請求項1に記載の太陽電池。
- 前記界面不活性化層は、前記熱処理によって形成された穿孔を含み、前記穿孔は、前記基板と前記不活性化導電性膜との間のキャリアの輸送を可能にするものである、請求項1に記載の太陽電池。
- 前記熱処理は500℃超であり、前記不活性化導電性膜中のドーピング原子が活性化し、ドーパント原子の拡散をもたらし、その結果、ドーパントは前記不活性化導電性膜から前記界面不活性化層へと拡散される、請求項1に記載の太陽電池。
- 前記ドーパントがリンを含むことを特徴とする、請求項1に記載の太陽電池。
- 前記ドーパントがホウ素を含むことを特徴とする、請求項1に記載の太陽電池。
- 前記界面不活性化層が、酸化物を含む、請求項1に記載の太陽電池。
- 前記酸化物が、シリコン酸化物及びアルミニウム酸化物から選択される、請求項11に記載の太陽電池。
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