HK1169746A1 - 高效率太陽能電池結構及製造方法 - Google Patents

高效率太陽能電池結構及製造方法

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Publication number
HK1169746A1
HK1169746A1 HK12110488.4A HK12110488A HK1169746A1 HK 1169746 A1 HK1169746 A1 HK 1169746A1 HK 12110488 A HK12110488 A HK 12110488A HK 1169746 A1 HK1169746 A1 HK 1169746A1
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HK
Hong Kong
Prior art keywords
manufacture
methods
solar cell
cell structures
efficiency solar
Prior art date
Application number
HK12110488.4A
Other languages
English (en)
Inventor
．舒爾茨-韋特曼
．德賽斯特
Original Assignee
泰特拉桑有限公司
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Application filed by 泰特拉桑有限公司 filed Critical 泰特拉桑有限公司
Publication of HK1169746A1 publication Critical patent/HK1169746A1/zh

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
    • H01L31/0216—Coatings
    • H01L31/02161—Coatings for devices characterised by at least one potential jump barrier or surface barrier
    • H01L31/02167—Coatings for devices characterised by at least one potential jump barrier or surface barrier for solar cells
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
    • H01L31/0216—Coatings
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
    • H01L31/0216—Coatings
    • H01L31/02161—Coatings for devices characterised by at least one potential jump barrier or surface barrier
    • H01L31/02167—Coatings for devices characterised by at least one potential jump barrier or surface barrier for solar cells
    • H01L31/02168—Coatings for devices characterised by at least one potential jump barrier or surface barrier for solar cells the coatings being antireflective or having enhancing optical properties for the solar cells
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
    • H01L31/0224—Electrodes
    • H01L31/022408—Electrodes for devices characterised by at least one potential jump barrier or surface barrier
    • H01L31/022425—Electrodes for devices characterised by at least one potential jump barrier or surface barrier for solar cells
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
    • H01L31/0224—Electrodes
    • H01L31/022466—Electrodes made of transparent conductive layers, e.g. TCO, ITO layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/042—PV modules or arrays of single PV cells
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
    • H01L31/186—Particular post-treatment for the devices, e.g. annealing, impurity gettering, short-circuit elimination, recrystallisation
    • H01L31/1864—Annealing
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
    • H01L31/186—Particular post-treatment for the devices, e.g. annealing, impurity gettering, short-circuit elimination, recrystallisation
    • H01L31/1868—Passivation
    • H—ELECTRICITY
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    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
    • H01L31/186—Particular post-treatment for the devices, e.g. annealing, impurity gettering, short-circuit elimination, recrystallisation
    • H01L31/1872—Recrystallisation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
    • H01L31/1884—Manufacture of transparent electrodes, e.g. TCO, ITO
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/042—PV modules or arrays of single PV cells
    • H01L31/0445—PV modules or arrays of single PV cells including thin film solar cells, e.g. single thin film a-Si, CIS or CdTe solar cells
    • H01L31/046—PV modules composed of a plurality of thin film solar cells deposited on the same substrate
    • H01L31/0463—PV modules composed of a plurality of thin film solar cells deposited on the same substrate characterised by special patterning methods to connect the PV cells in a module, e.g. laser cutting of the conductive or active layers
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/548—Amorphous silicon PV cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
HK12110488.4A 2009-04-21 2012-10-22 高效率太陽能電池結構及製造方法 HK1169746A1 (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US17119409P 2009-04-21 2009-04-21
PCT/US2010/031869 WO2010123974A1 (en) 2009-04-21 2010-04-21 High-efficiency solar cell structures and methods of manufacture

Publications (1)

Publication Number Publication Date
HK1169746A1 true HK1169746A1 (zh) 2013-02-01

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US (3) US9130074B2 (zh)
EP (4) EP4350784A2 (zh)
JP (6) JP5576474B2 (zh)
KR (1) KR101714097B1 (zh)
CN (2) CN104952943B (zh)
AU (1) AU2010239265B2 (zh)
CA (1) CA2759708C (zh)
HK (1) HK1169746A1 (zh)
MX (1) MX2011011138A (zh)
MY (1) MY186820A (zh)
SG (1) SG175752A1 (zh)
WO (1) WO2010123974A1 (zh)

Families Citing this family (98)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7554031B2 (en) * 2005-03-03 2009-06-30 Sunpower Corporation Preventing harmful polarization of solar cells
MY186820A (en) 2009-04-21 2021-08-23 Tetrasun Inc High-efficiency solar cell structures and methods of manufacture
WO2010123980A1 (en) * 2009-04-22 2010-10-28 Tetrasun, Inc. Localized metal contacts by localized laser assisted conversion of functional films in solar cells
US9012766B2 (en) 2009-11-12 2015-04-21 Silevo, Inc. Aluminum grid as backside conductor on epitaxial silicon thin film solar cells
JP5778247B2 (ja) 2010-03-26 2015-09-16 テトラサン インコーポレイテッド 高効率結晶太陽電池における遮蔽された電気接点およびパッシベーション化誘電体層を通じたドーピング、ならびにその構造および製造方法
US9202960B2 (en) * 2010-03-30 2015-12-01 Sunpower Corporation Leakage pathway layer for solar cell
US8686283B2 (en) * 2010-05-04 2014-04-01 Silevo, Inc. Solar cell with oxide tunneling junctions
US9214576B2 (en) 2010-06-09 2015-12-15 Solarcity Corporation Transparent conducting oxide for photovoltaic devices
US9773928B2 (en) 2010-09-10 2017-09-26 Tesla, Inc. Solar cell with electroplated metal grid
US9800053B2 (en) 2010-10-08 2017-10-24 Tesla, Inc. Solar panels with integrated cell-level MPPT devices
KR20120084104A (ko) * 2011-01-19 2012-07-27 엘지전자 주식회사 태양전지
TWI463682B (zh) * 2011-03-02 2014-12-01 Nat Univ Tsing Hua 異質接面太陽能電池
DE102011015283B4 (de) * 2011-03-28 2013-03-07 Bayerisches Zentrum für Angewandte Energieforschung e.V. Herstellung eines Halbleiter-Bauelements durch Laser-unterstütztes Bonden und damit hergestelltes Halbleiter-Bauelement
US9054256B2 (en) * 2011-06-02 2015-06-09 Solarcity Corporation Tunneling-junction solar cell with copper grid for concentrated photovoltaic application
KR20120140026A (ko) * 2011-06-20 2012-12-28 엘지전자 주식회사 태양전지
FI20116217A (fi) * 2011-12-02 2013-06-03 Beneq Oy Piitä sisältävä n-tyypin aurinkokennopari
KR101766339B1 (ko) 2012-01-11 2017-08-08 엘지전자 주식회사 태양 전지 및 그 제조 방법
CN104168827A (zh) 2012-03-15 2014-11-26 灯船医药有限公司 传感器
FR2989520B1 (fr) * 2012-04-11 2014-04-04 Commissariat Energie Atomique Procede de realisation d'une cellule photovoltaique a heterojonction
US20130298973A1 (en) * 2012-05-14 2013-11-14 Silevo, Inc. Tunneling-junction solar cell with shallow counter doping layer in the substrate
KR20140022515A (ko) * 2012-08-13 2014-02-25 엘지전자 주식회사 태양 전지
FR2996058B1 (fr) * 2012-09-24 2014-09-26 Commissariat Energie Atomique Cellule photovoltaique a hererojonction et procede de fabrication d'une telle cellule
ES2452939B1 (es) * 2012-10-03 2015-03-12 Bsh Electrodomesticos Espana Dispositivo de aparato doméstico
MX351564B (es) 2012-10-04 2017-10-18 Solarcity Corp Dispositivos fotovoltaicos con rejillas metálicas galvanizadas.
US9865754B2 (en) 2012-10-10 2018-01-09 Tesla, Inc. Hole collectors for silicon photovoltaic cells
CN104956495B (zh) * 2012-12-18 2016-11-09 日本琵维吉咨询株式会社 太阳能电池单元以及其制造方法
US9281436B2 (en) 2012-12-28 2016-03-08 Solarcity Corporation Radio-frequency sputtering system with rotary target for fabricating solar cells
US9219174B2 (en) 2013-01-11 2015-12-22 Solarcity Corporation Module fabrication of solar cells with low resistivity electrodes
US10074755B2 (en) 2013-01-11 2018-09-11 Tesla, Inc. High efficiency solar panel
US9412884B2 (en) 2013-01-11 2016-08-09 Solarcity Corporation Module fabrication of solar cells with low resistivity electrodes
EP2787541B1 (en) 2013-04-03 2022-08-31 LG Electronics, Inc. Solar cell
CN103227246A (zh) * 2013-04-11 2013-07-31 浙江正泰太阳能科技有限公司 一种异质结电池的制备方法
CN103199143B (zh) * 2013-04-28 2016-06-29 常州天合光能有限公司 N型掺氢晶化硅钝化的异质结太阳能电池器件
US9624595B2 (en) 2013-05-24 2017-04-18 Solarcity Corporation Electroplating apparatus with improved throughput
JP6375298B2 (ja) * 2013-07-25 2018-08-15 ナミックス株式会社 結晶系シリコン太陽電池及びその製造方法
DE102013219561A1 (de) 2013-09-27 2015-04-02 Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. Verfahren zum Herstellen einer photovoltaischen Solarzelle mit zumindest einem Heteroübergang
CN103730532A (zh) * 2014-01-10 2014-04-16 常州天合光能有限公司 掺氢晶化硅钝化的异质结太阳能电池
EP2922101A1 (en) * 2014-03-19 2015-09-23 Institut für Solarenergieforschung GmbH Conductive polymer/Si interfaces at the backside of solar cells
DE102014205350B4 (de) * 2014-03-21 2021-09-09 Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. Photoaktives Halbleiterbauelement sowie Verfahren zum Herstellen eines photoaktiven Halbleiterbauelementes
US20150287843A1 (en) * 2014-04-03 2015-10-08 Tsmc Solar Ltd. Solar cell with dielectric layer
US9818903B2 (en) 2014-04-30 2017-11-14 Sunpower Corporation Bonds for solar cell metallization
US9382111B2 (en) * 2014-06-26 2016-07-05 Infineon Technologies Dresden Gmbh Micromechanical system and method for manufacturing a micromechanical system
US20150380581A1 (en) * 2014-06-27 2015-12-31 Michael C. Johnson Passivation of light-receiving surfaces of solar cells with crystalline silicon
US10309012B2 (en) 2014-07-03 2019-06-04 Tesla, Inc. Wafer carrier for reducing contamination from carbon particles and outgassing
CN104134707B (zh) * 2014-08-11 2016-05-25 常州天合光能有限公司 有利于减少正面栅线数目的异质结电池及其制备方法
US20160072000A1 (en) * 2014-09-05 2016-03-10 David D. Smith Front contact heterojunction process
US9899546B2 (en) 2014-12-05 2018-02-20 Tesla, Inc. Photovoltaic cells with electrodes adapted to house conductive paste
TWI578549B (zh) * 2015-01-12 2017-04-11 財團法人工業技術研究院 光電元件、包含其之太陽能電池
TWI566424B (zh) * 2015-01-12 2017-01-11 財團法人工業技術研究院 光電元件、包含其之太陽能電池
US9947822B2 (en) 2015-02-02 2018-04-17 Tesla, Inc. Bifacial photovoltaic module using heterojunction solar cells
US9673341B2 (en) 2015-05-08 2017-06-06 Tetrasun, Inc. Photovoltaic devices with fine-line metallization and methods for manufacture
US9761744B2 (en) 2015-10-22 2017-09-12 Tesla, Inc. System and method for manufacturing photovoltaic structures with a metal seed layer
WO2017100443A1 (en) * 2015-12-10 2017-06-15 Arizona Board Of Regents On Behalf Of Arizona State University Recovery of valuable or toxic metals from silicon solar cells
NL2015987B1 (en) * 2015-12-18 2017-07-10 Stichting Energieonderzoek Centrum Nederland Tandem solar cell and method for manufacturing such a solar cell.
US9842956B2 (en) 2015-12-21 2017-12-12 Tesla, Inc. System and method for mass-production of high-efficiency photovoltaic structures
US9496429B1 (en) 2015-12-30 2016-11-15 Solarcity Corporation System and method for tin plating metal electrodes
CN108701736A (zh) * 2016-02-22 2018-10-23 松下知识产权经营株式会社 太阳能单电池和太阳能单电池的制造方法
CN109075216A (zh) * 2016-03-23 2018-12-21 三菱电机株式会社 太阳能电池及太阳能电池的制造方法
US10115838B2 (en) 2016-04-19 2018-10-30 Tesla, Inc. Photovoltaic structures with interlocking busbars
CN105870215A (zh) * 2016-04-28 2016-08-17 乐叶光伏科技有限公司 一种背面钝化接触电池电极结构及其制备方法
KR101833633B1 (ko) 2016-05-26 2018-03-02 한양대학교 에리카산학협력단 태양전지 및 그 제조 방법
NL2017290B1 (en) * 2016-08-04 2018-02-14 Stichting Energieonderzoek Centrum Nederland Passivated Emitter and Rear Contact Solar Cell
DE102016121680A1 (de) 2016-11-11 2018-05-17 Infineon Technologies Ag Halbleiterwafer und Halbleitervorrichtungen mit einer Sperrschicht und Verfahren zur Herstellung
NL2017872B1 (en) * 2016-11-25 2018-06-08 Stichting Energieonderzoek Centrum Nederland Photovoltaic cell with passivating contact
US20180158968A1 (en) * 2016-12-05 2018-06-07 Lg Electronics Inc. Solar cell and method of manufacturing the same
KR101799580B1 (ko) 2016-12-16 2017-11-20 엘지전자 주식회사 이종 접합 태양전지
CN107068779B (zh) * 2017-02-28 2019-01-18 中山大学 一种太阳电池结构及其制备方法
KR101892279B1 (ko) 2017-04-24 2018-08-28 엘지전자 주식회사 화합물 반도체 태양 전지 및 이의 제조 방법
CN108899374B (zh) * 2017-05-15 2020-02-18 中国科学院微电子研究所 一种硅基太阳能电池及其制备方法
CN107369726B (zh) * 2017-05-26 2023-09-15 泰州隆基乐叶光伏科技有限公司 n型晶体硅双面太阳电池
CN108987488B (zh) * 2017-05-31 2024-01-30 国家电投集团新能源科技有限公司 硅异质结太阳电池及其制备方法
WO2018234878A1 (en) * 2017-06-23 2018-12-27 King Abdullah University Of Science And Technology HOLES LOCKING LAYERS FOR ELECTRONIC DEVICES AND METHOD FOR PRODUCING AN ELECTRONIC DEVICE HAVING A HOLES LOCKING LAYER
CN107342332A (zh) * 2017-07-07 2017-11-10 常州亿晶光电科技有限公司 双面polo电池及其制备方法
CN107275432B (zh) * 2017-08-04 2024-02-02 天合光能股份有限公司 一种晶体硅太阳能电池及其制备方法
US10672919B2 (en) 2017-09-19 2020-06-02 Tesla, Inc. Moisture-resistant solar cells for solar roof tiles
TWI662715B (zh) * 2017-10-27 2019-06-11 財團法人工業技術研究院 太陽能電池
CN108288658B (zh) * 2018-02-01 2020-07-07 盐城应天光电科技有限公司 一种光伏电池元件及其制造方法
CN108389917B (zh) * 2018-02-02 2020-01-24 安徽秦能光电有限公司 一种n型硅基太阳能电池及其制造方法
WO2019165234A1 (en) * 2018-02-23 2019-08-29 Ohio State Innovation Foundation Passivated conductive films, and electroactuators containing same
US11190128B2 (en) 2018-02-27 2021-11-30 Tesla, Inc. Parallel-connected solar roof tile modules
WO2019206679A1 (en) 2018-04-24 2019-10-31 CSEM Centre Suisse d'Electronique et de Microtechnique SA - Recherche et Développement Passivated layer stack for a light harvesting device
EP3579285A1 (en) * 2018-06-08 2019-12-11 Total SA Method to obtain a photovoltaic device
EP3579284A1 (en) * 2018-06-08 2019-12-11 Total SA Method to obtain a photovoltaic device
AU2019290813B2 (en) 2018-06-22 2022-07-28 Jingao Solar Co., Ltd. Crystalline silicon solar cell and preparation method therefor, and photovoltaic assembly
CN109494261A (zh) * 2018-10-19 2019-03-19 晶澳（扬州）太阳能科技有限公司 硅基太阳能电池及制备方法、光伏组件
CN110061086A (zh) * 2019-04-04 2019-07-26 国家电投集团西安太阳能电力有限公司 一种hbc太阳能电池
CN110190137B (zh) * 2019-04-28 2020-10-16 东方日升（常州）新能源有限公司 一种用于正面接触钝化的双层钝化膜及其制备方法
CN110190156A (zh) * 2019-07-08 2019-08-30 无锡松煜科技有限公司 TOPCon电池表面钝化设备及钝化方法
CN110335901B (zh) * 2019-08-12 2024-04-16 无锡松煜科技有限公司 光伏电池表面钝化系统及钝化方法
CN110634996A (zh) * 2019-09-27 2019-12-31 浙江晶科能源有限公司 一种钝化结构的制作方法、钝化结构和光伏电池
DE102020001980A1 (de) 2020-03-26 2021-09-30 Singulus Technologies Ag Verfahren und Anlage zur Herstellung eines Ausgangsmaterials für eine Siliziumsolarzelle mit passivierten Kontakten
CN114613865A (zh) * 2020-11-25 2022-06-10 嘉兴阿特斯技术研究院有限公司 太阳能电池及其制备方法
CN112885925B (zh) * 2021-02-05 2022-10-14 泰州隆基乐叶光伏科技有限公司 一种太阳能电池及其制作方法
CN112802910A (zh) * 2021-02-09 2021-05-14 通威太阳能（成都）有限公司 一种高效硅异质结太阳能电池及其制备方法
CN112768549A (zh) 2021-02-09 2021-05-07 通威太阳能（成都）有限公司 一种高光电转换效率的hjt电池及其制备方法
FR3129769A1 (fr) * 2021-11-29 2023-06-02 Commissariat à l'Energie Atomique et aux Energies Alternatives Procédé de passivation
CN114464708A (zh) * 2022-04-12 2022-05-10 季华实验室 一种异质结太阳电池及其制备方法
WO2024073046A1 (en) * 2022-09-30 2024-04-04 Energy Materials Corporation Photovoltaic structures having a composite conductor

Family Cites Families (66)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5771188A (en) * 1980-10-21 1982-05-01 Mitsubishi Electric Corp Amorphous solar cell
US4481046A (en) 1983-09-29 1984-11-06 International Business Machines Corporation Method for making diffusions into a substrate and electrical connections thereto using silicon containing rare earth hexaboride materials
DE3340874A1 (de) * 1983-11-11 1985-05-23 Telefunken electronic GmbH, 7100 Heilbronn Verfahren zum herstellen einer solarzelle
JPS618916A (ja) * 1984-06-21 1986-01-16 インタ−ナシヨナル・ビジネス・マシ−ンズ・コ−ポレ−シヨン ド−プ領域の形成方法
JPS6185875A (ja) * 1984-10-03 1986-05-01 Sharp Corp 太陽電池
DE3516117A1 (de) * 1985-05-04 1986-11-06 Telefunken electronic GmbH, 7100 Heilbronn Solarzelle
DE4009336A1 (de) * 1990-03-23 1991-09-26 Telefunken Systemtechnik Solarzelle
JPH04261069A (ja) * 1991-01-31 1992-09-17 Tonen Corp 太陽電池の製造方法
JPH0521821A (ja) * 1991-07-16 1993-01-29 Sharp Corp 光電変換装置
JPH06111877A (ja) 1992-09-30 1994-04-22 Toshiba Lighting & Technol Corp テーブルタップ
JP3006396B2 (ja) * 1993-03-02 2000-02-07 日本電気株式会社 半導体薄膜の形成方法
JP3360919B2 (ja) * 1993-06-11 2003-01-07 三菱電機株式会社 薄膜太陽電池の製造方法，及び薄膜太陽電池
JPH0864851A (ja) * 1994-06-14 1996-03-08 Sanyo Electric Co Ltd 光起電力素子及びその製造方法
JP3311534B2 (ja) * 1995-02-08 2002-08-05 三洋電機株式会社 光起電力素子
JP3545583B2 (ja) * 1996-12-26 2004-07-21 株式会社ルネサステクノロジ 半導体装置およびその製造方法
AUPO638997A0 (en) * 1997-04-23 1997-05-22 Unisearch Limited Metal contact scheme using selective silicon growth
US5972784A (en) * 1997-04-24 1999-10-26 Georgia Tech Research Corporation Arrangement, dopant source, and method for making solar cells
US6339013B1 (en) * 1997-05-13 2002-01-15 The Board Of Trustees Of The University Of Arkansas Method of doping silicon, metal doped silicon, method of making solar cells, and solar cells
TW454339B (en) 1997-06-20 2001-09-11 Hitachi Ltd Semiconductor integrated circuit apparatus and its fabricating method
JPH11112011A (ja) * 1997-09-30 1999-04-23 Sanyo Electric Co Ltd 光起電力素子の製造方法
WO2001069690A1 (en) 2000-03-13 2001-09-20 Sony Corporation Optical energy transducer
JP2001274430A (ja) * 2000-03-23 2001-10-05 Kanegafuchi Chem Ind Co Ltd 薄膜光電変換装置
EP1148037A1 (de) 2000-04-19 2001-10-24 Blösch Holding AG Herstellungsverfahren für eine Entspiegelungsschicht auf Uhrengläsern
JP2003533053A (ja) * 2000-05-05 2003-11-05 ユニサーチ リミテツド 光起電力素子のための低領域金属接点
US6930732B2 (en) 2000-10-11 2005-08-16 Lg.Philips Lcd Co., Ltd. Array substrate for a liquid crystal display
DE10152707B4 (de) * 2001-10-19 2004-08-26 Rwe Schott Solar Gmbh Verfahren zur Herstellung einer Solarzelle
JP4244549B2 (ja) * 2001-11-13 2009-03-25 トヨタ自動車株式会社 光電変換素子及びその製造方法
JP3902534B2 (ja) * 2001-11-29 2007-04-11 三洋電機株式会社 光起電力装置及びその製造方法
JP2003298078A (ja) 2002-03-29 2003-10-17 Ebara Corp 光起電力素子
JP2004014958A (ja) * 2002-06-11 2004-01-15 Fuji Electric Holdings Co Ltd 薄膜多結晶太陽電池とその製造方法
JP3978121B2 (ja) * 2002-11-27 2007-09-19 三菱重工業株式会社 薄膜太陽電池の製造方法
JP2004193350A (ja) * 2002-12-11 2004-07-08 Sharp Corp 太陽電池セルおよびその製造方法
JP4107971B2 (ja) * 2003-01-17 2008-06-25 三洋電機株式会社 光起電力装置およびその製造方法
US8664525B2 (en) * 2003-05-07 2014-03-04 Imec Germanium solar cell and method for the production thereof
US7202143B1 (en) * 2003-10-23 2007-04-10 The Board Of Trustees Of The University Of Arkansas Low temperature production of large-grain polycrystalline semiconductors
US7162874B2 (en) * 2004-07-30 2007-01-16 Hija Holding B.V. Apparatus and method for gas turbine engine fuel/air premixer exit velocity control
DE102004044709A1 (de) * 2004-09-15 2006-03-16 Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. Verfahren zur gleichzeitigen Rekristalisierung und Dotierung von Halbleiterschichten und nach diesem Verfahren hergestellte Halbleiterschichtsysteme
JP2006128630A (ja) 2004-09-29 2006-05-18 Sanyo Electric Co Ltd 光起電力装置
EP1643564B1 (en) 2004-09-29 2019-01-16 Panasonic Intellectual Property Management Co., Ltd. Photovoltaic device
JP4744161B2 (ja) * 2005-02-28 2011-08-10 三洋電機株式会社 光起電力素子
DE102005013668B3 (de) * 2005-03-14 2006-11-16 Universität Stuttgart Solarzelle
US7759158B2 (en) * 2005-03-22 2010-07-20 Applied Materials, Inc. Scalable photovoltaic cell and solar panel manufacturing with improved wiring
US7556748B2 (en) * 2005-04-14 2009-07-07 E. I. Du Pont De Nemours And Company Method of manufacture of semiconductor device and conductive compositions used therein
US7375378B2 (en) * 2005-05-12 2008-05-20 General Electric Company Surface passivated photovoltaic devices
US7468485B1 (en) * 2005-08-11 2008-12-23 Sunpower Corporation Back side contact solar cell with doped polysilicon regions
US20070295399A1 (en) * 2005-12-16 2007-12-27 Bp Corporation North America Inc. Back-Contact Photovoltaic Cells
DE102006007797B4 (de) * 2006-02-20 2008-01-03 Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. Verfahren zur Herstellung eines Halbleiterbauelements sowie dessen Verwendung
US7777250B2 (en) 2006-03-24 2010-08-17 Taiwan Semiconductor Manufacturing Company, Ltd. Lattice-mismatched semiconductor structures and related methods for device fabrication
EP2012364B1 (en) * 2006-04-26 2011-11-30 Hitachi Chemical Company, Ltd. Adhesive tape and solar cell module using the same
US7737357B2 (en) * 2006-05-04 2010-06-15 Sunpower Corporation Solar cell having doped semiconductor heterojunction contacts
EP2021533A4 (en) * 2006-05-15 2010-01-06 Arise Technologies Corp LOW TEMPERATURE DOPING PROCESS FOR SILICON GALETTE DEVICE
US20080000116A1 (en) * 2006-06-30 2008-01-03 Sharon Linda Last Photo/greeting card memento basket kit
DE102006041424A1 (de) 2006-09-04 2008-03-20 Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. Verfahren zur simultanen Dotierung und Oxidation von Halbleitersubstraten und dessen Verwendung
TWI320974B (en) * 2006-09-27 2010-02-21 Sino American Silicon Prod Inc Solar cell and method of fabircating the same
CN101236999A (zh) * 2007-01-29 2008-08-06 北京行者多媒体科技有限公司 非晶硅薄膜光伏模块的分流缺陷的钝化方法
WO2008098407A1 (en) * 2007-02-08 2008-08-21 Suntech Power Co., Ltd Hybrid silicon solar cells and method of fabricating same
KR20100015622A (ko) * 2007-03-16 2010-02-12 비피 코포레이션 노쓰 아메리카 인코포레이티드 태양 전지
JP5526461B2 (ja) * 2007-03-19 2014-06-18 三洋電機株式会社 光起電力装置
KR100974226B1 (ko) * 2007-03-23 2010-08-06 엘지전자 주식회사 유전체를 이용한 태양전지의 후면 반사막 및 패시베이션층형성
US8309387B2 (en) 2007-04-13 2012-11-13 David Forehand Improving back-contact performance of group VI containing solar cells by utilizing a nanoscale interfacial layer
US8013238B2 (en) 2007-07-09 2011-09-06 Energy Related Devices, Inc. Micro concentrators elastically coupled with spherical photovoltaic cells
KR100965778B1 (ko) * 2008-01-16 2010-06-24 서울대학교산학협력단 고효율 다결정 실리콘 태양전지 및 그 제조방법
US7846762B2 (en) * 2008-09-22 2010-12-07 Applied Materials, Inc. Integrated emitter formation and passivation
US8124502B2 (en) * 2008-10-23 2012-02-28 Applied Materials, Inc. Semiconductor device manufacturing method, semiconductor device and semiconductor device manufacturing installation
US7858427B2 (en) * 2009-03-03 2010-12-28 Applied Materials, Inc. Crystalline silicon solar cells on low purity substrate
MY186820A (en) 2009-04-21 2021-08-23 Tetrasun Inc High-efficiency solar cell structures and methods of manufacture

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