FR2989520B1 - Procede de realisation d'une cellule photovoltaique a heterojonction - Google Patents
Procede de realisation d'une cellule photovoltaique a heterojonctionInfo
- Publication number
- FR2989520B1 FR2989520B1 FR1201064A FR1201064A FR2989520B1 FR 2989520 B1 FR2989520 B1 FR 2989520B1 FR 1201064 A FR1201064 A FR 1201064A FR 1201064 A FR1201064 A FR 1201064A FR 2989520 B1 FR2989520 B1 FR 2989520B1
- Authority
- FR
- France
- Prior art keywords
- producing
- photovoltaic cell
- heterojunction photovoltaic
- heterojunction
- cell
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
- 238000004519 manufacturing process Methods 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/02002—Arrangements for conducting electric current to or from the device in operations
- H01L31/02005—Arrangements for conducting electric current to or from the device in operations for device characterised by at least one potential jump barrier or surface barrier
- H01L31/02008—Arrangements for conducting electric current to or from the device in operations for device characterised by at least one potential jump barrier or surface barrier for solar cells or solar cell modules
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0224—Electrodes
- H01L31/022408—Electrodes for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/022425—Electrodes for devices characterised by at least one potential jump barrier or surface barrier for solar cells
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0232—Optical elements or arrangements associated with the device
- H01L31/02327—Optical elements or arrangements associated with the device the optical elements being integrated or being directly associated to the device, e.g. back reflectors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers
- H01L31/072—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN heterojunction type
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers
- H01L31/072—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN heterojunction type
- H01L31/0745—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN heterojunction type comprising a AIVBIV heterojunction, e.g. Si/Ge, SiGe/Si or Si/SiC solar cells
- H01L31/0747—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN heterojunction type comprising a AIVBIV heterojunction, e.g. Si/Ge, SiGe/Si or Si/SiC solar cells comprising a heterojunction of crystalline and amorphous materials, e.g. heterojunction with intrinsic thin layer
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/20—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof such devices or parts thereof comprising amorphous semiconductor materials
- H01L31/202—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof such devices or parts thereof comprising amorphous semiconductor materials including only elements of Group IV of the Periodic Table
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/20—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof such devices or parts thereof comprising amorphous semiconductor materials
- H01L31/208—Particular post-treatment of the devices, e.g. annealing, short-circuit elimination
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Sustainable Energy (AREA)
- Life Sciences & Earth Sciences (AREA)
- Manufacturing & Machinery (AREA)
- Sustainable Development (AREA)
- Photovoltaic Devices (AREA)
Priority Applications (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
FR1201064A FR2989520B1 (fr) | 2012-04-11 | 2012-04-11 | Procede de realisation d'une cellule photovoltaique a heterojonction |
EP13722481.2A EP2837037A1 (fr) | 2012-04-11 | 2013-04-10 | Procédé de réalisation d'une cellule photovoltaïque à hétérojonction |
US14/394,410 US9293608B2 (en) | 2012-04-11 | 2013-04-10 | Method for producing a photovoltaic cell having a heterojunction |
PCT/FR2013/000097 WO2013153293A1 (fr) | 2012-04-11 | 2013-04-10 | Procédé de réalisation d'une cellule photovoltaïque à hétérojonction |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
FR1201064A FR2989520B1 (fr) | 2012-04-11 | 2012-04-11 | Procede de realisation d'une cellule photovoltaique a heterojonction |
Publications (2)
Publication Number | Publication Date |
---|---|
FR2989520A1 FR2989520A1 (fr) | 2013-10-18 |
FR2989520B1 true FR2989520B1 (fr) | 2014-04-04 |
Family
ID=48430826
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
FR1201064A Active FR2989520B1 (fr) | 2012-04-11 | 2012-04-11 | Procede de realisation d'une cellule photovoltaique a heterojonction |
Country Status (4)
Country | Link |
---|---|
US (1) | US9293608B2 (fr) |
EP (1) | EP2837037A1 (fr) |
FR (1) | FR2989520B1 (fr) |
WO (1) | WO2013153293A1 (fr) |
Family Cites Families (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE10046170A1 (de) * | 2000-09-19 | 2002-04-04 | Fraunhofer Ges Forschung | Verfahren zur Herstellung eines Halbleiter-Metallkontaktes durch eine dielektrische Schicht |
DE102006040352B3 (de) * | 2006-08-29 | 2007-10-18 | Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. | Verfahren zum Aufbringen von elektrischen Kontakten auf halbleitende Substrate, halbleitendes Substrat und Verwendung des Verfahrens |
DE102006046726A1 (de) * | 2006-10-02 | 2008-04-03 | Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. | Solarzelle mit strukturierter Rückseitenpassivierungsschicht aus SIOx und SINx sowie Verfahren zur Herstellung |
JP2009152222A (ja) * | 2006-10-27 | 2009-07-09 | Kyocera Corp | 太陽電池素子の製造方法 |
EP2422373B1 (fr) * | 2009-04-21 | 2024-06-05 | Tetrasun, Inc. | Méthode de fabrication de structures de cellules solaires à efficacité élevée |
FR2957479B1 (fr) * | 2010-03-12 | 2012-04-27 | Commissariat Energie Atomique | Procede de traitement d'un contact metallique realise sur un substrat |
KR101188486B1 (ko) * | 2010-12-08 | 2012-10-05 | 현대중공업 주식회사 | 이종접합형 태양전지의 전극 제조방법 |
US8927428B2 (en) * | 2011-11-04 | 2015-01-06 | E I Du Pont De Nemours And Company | Process of forming an aluminum p-doped surface region of an n-doped semiconductor substrate |
-
2012
- 2012-04-11 FR FR1201064A patent/FR2989520B1/fr active Active
-
2013
- 2013-04-10 US US14/394,410 patent/US9293608B2/en not_active Expired - Fee Related
- 2013-04-10 EP EP13722481.2A patent/EP2837037A1/fr not_active Withdrawn
- 2013-04-10 WO PCT/FR2013/000097 patent/WO2013153293A1/fr active Application Filing
Also Published As
Publication number | Publication date |
---|---|
US20150079721A1 (en) | 2015-03-19 |
EP2837037A1 (fr) | 2015-02-18 |
FR2989520A1 (fr) | 2013-10-18 |
WO2013153293A1 (fr) | 2013-10-17 |
US9293608B2 (en) | 2016-03-22 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
FR3011982B1 (fr) | Procede de realisation d'une cellule photovoltaique | |
EP3930013C0 (fr) | Procédé de fabrication d'une cellule solaire photovoltaïque dotée d'au moins une hétérojonction | |
BR112013028289A2 (pt) | sistemas solares híbridos e métodos de produção | |
EP2678884A4 (fr) | Système de châssis pour module de cellule solaire | |
FR2974940B1 (fr) | Procede de realisation de nanocristaux de semi-conducteur orientes selon une direction pre-definie | |
FR2955697B1 (fr) | Procede de recuit d'une structure | |
FR2988908B1 (fr) | Procede de fabrication d'une cellule photovoltaique a contacts interdigites en face arriere | |
EP2842717A4 (fr) | Procédé de fabrication de feuille de matériau de scellement de batterie solaire | |
FR2980279B1 (fr) | Procede de fabrication d'une structure composite a separer par exfoliation | |
EP2691989A4 (fr) | Procédé de fabrication d'une cellule solaire | |
BR112013023023A2 (pt) | módulo de coletor solar de calha | |
FR2995451B1 (fr) | Procede de metallisation d'une cellule photovoltaique et cellule photovoltaique ainsi obtenue | |
EP2752889A4 (fr) | Procédé de fabrication de module de piles solaires | |
SG11201401113RA (en) | Method for manufacturing solar cell | |
FR2979265B1 (fr) | Procede de realisation d'une piece dans un poste d'emboutissage | |
FR2995918B1 (fr) | Procede de realisation d'une structure armee dans un sol | |
HUE054929T2 (hu) | Eljárás napelem gyártására | |
FR2957458B1 (fr) | Procede de realisation d'une electrode conductrice | |
FR3003692B1 (fr) | Procede de fabrication d’une structure a multijonctions pour cellule photovoltaique | |
FR2996059B1 (fr) | Procede de realisation d'une cellule photovoltaique a heterojonction et cellule photovoltaique ainsi obtenue | |
FR2990300B1 (fr) | Module photovoltaique et son procede de realisation. | |
FR2982857B1 (fr) | Procede de production de biomethane | |
FR3004002B1 (fr) | Procede d'assemblage avance de cellule photovoltaique concentree | |
PL2737542T3 (pl) | <div>SPOSÓB WYTWARZANIA KOMÓRKI FOTOWOLTAICZNEJ</div> | |
FR2997400B1 (fr) | Procede de production de sophorose a partir de sophorolipides |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
PLFP | Fee payment |
Year of fee payment: 4 |
|
PLFP | Fee payment |
Year of fee payment: 5 |
|
PLFP | Fee payment |
Year of fee payment: 6 |