FI20116217A - Piitä sisältävä n-tyypin aurinkokennopari - Google Patents

Piitä sisältävä n-tyypin aurinkokennopari Download PDF

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Publication number
FI20116217A
FI20116217A FI20116217A FI20116217A FI20116217A FI 20116217 A FI20116217 A FI 20116217A FI 20116217 A FI20116217 A FI 20116217A FI 20116217 A FI20116217 A FI 20116217A FI 20116217 A FI20116217 A FI 20116217A
Authority
FI
Finland
Prior art keywords
silicon
type
motor cell
photoelectric
photoelectric motor
Prior art date
Application number
FI20116217A
Other languages
English (en)
Swedish (sv)
Inventor
Jarmo Skarp
Original Assignee
Beneq Oy
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Beneq Oy filed Critical Beneq Oy
Priority to FI20116217A priority Critical patent/FI20116217A/fi
Priority to PCT/FI2012/051188 priority patent/WO2013079800A1/en
Publication of FI20116217A publication Critical patent/FI20116217A/fi

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
    • H01L31/0216—Coatings
    • H01L31/02161—Coatings for devices characterised by at least one potential jump barrier or surface barrier
    • H01L31/02167—Coatings for devices characterised by at least one potential jump barrier or surface barrier for solar cells
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
    • H01L31/1804—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof comprising only elements of Group IV of the Periodic Table
    • H01L31/182—Special manufacturing methods for polycrystalline Si, e.g. Si ribbon, poly Si ingots, thin films of polycrystalline Si
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
    • H01L31/0216—Coatings
    • H01L31/02161—Coatings for devices characterised by at least one potential jump barrier or surface barrier
    • H01L31/02167—Coatings for devices characterised by at least one potential jump barrier or surface barrier for solar cells
    • H01L31/02168—Coatings for devices characterised by at least one potential jump barrier or surface barrier for solar cells the coatings being antireflective or having enhancing optical properties for the solar cells
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
    • H01L31/186—Particular post-treatment for the devices, e.g. annealing, impurity gettering, short-circuit elimination, recrystallisation
    • H01L31/1868—Passivation
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/546—Polycrystalline silicon PV cells

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Electromagnetism (AREA)
  • General Physics & Mathematics (AREA)
  • Sustainable Development (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Sustainable Energy (AREA)
  • Manufacturing & Machinery (AREA)
  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Photovoltaic Devices (AREA)
FI20116217A 2011-12-02 2011-12-02 Piitä sisältävä n-tyypin aurinkokennopari FI20116217A (fi)

Priority Applications (2)

Application Number Priority Date Filing Date Title
FI20116217A FI20116217A (fi) 2011-12-02 2011-12-02 Piitä sisältävä n-tyypin aurinkokennopari
PCT/FI2012/051188 WO2013079800A1 (en) 2011-12-02 2012-11-30 An n-type silicon photovoltaic cell structure

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FI20116217A FI20116217A (fi) 2011-12-02 2011-12-02 Piitä sisältävä n-tyypin aurinkokennopari

Publications (1)

Publication Number Publication Date
FI20116217A true FI20116217A (fi) 2013-06-03

Family

ID=48534736

Family Applications (1)

Application Number Title Priority Date Filing Date
FI20116217A FI20116217A (fi) 2011-12-02 2011-12-02 Piitä sisältävä n-tyypin aurinkokennopari

Country Status (2)

Country Link
FI (1) FI20116217A (fi)
WO (1) WO2013079800A1 (fi)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20210010095A (ko) * 2019-07-19 2021-01-27 엘지전자 주식회사 태양 전지 및 이의 제조 방법
FI130280B (fi) * 2021-03-19 2023-05-31 Beneq Oy Menetelmä ja käyttö kalvoon liittyen ja kalvo

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20070277875A1 (en) * 2006-05-31 2007-12-06 Kishor Purushottam Gadkaree Thin film photovoltaic structure
TWI320974B (en) * 2006-09-27 2010-02-21 Sino American Silicon Prod Inc Solar cell and method of fabircating the same
DE102007054384A1 (de) * 2007-11-14 2009-05-20 Institut Für Solarenergieforschung Gmbh Verfahren zum Herstellen einer Solarzelle mit einer oberflächenpassivierenden Dielektrikumdoppelschicht und entsprechende Solarzelle
DE102008045522A1 (de) * 2008-09-03 2010-03-04 Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. Heterosolarzelle und Verfahren zur Herstellung von Heterosolarzellen
US20100210060A1 (en) * 2009-02-13 2010-08-19 Peter Borden Double anneal process for an improved rapid thermal oxide passivated solar cell
KR101714097B1 (ko) * 2009-04-21 2017-03-08 테트라썬, 아이엔씨. 고효율 태양전지 구조 및 제조방법
EP2443664A2 (en) * 2009-04-24 2012-04-25 Wolf Oetting Methods and devices for an electrically non-resistive layer formed from an electrically insulating material
DE102009025977A1 (de) * 2009-06-16 2010-12-23 Q-Cells Se Solarzelle und Herstellungsverfahren einer Solarzelle
FR2953999B1 (fr) * 2009-12-14 2012-01-20 Total Sa Cellule photovoltaique heterojonction a contact arriere
DE102010017155B4 (de) * 2010-05-31 2012-01-26 Q-Cells Se Solarzelle
CN102064237A (zh) * 2010-11-29 2011-05-18 奥特斯维能源（太仓）有限公司 一种用于晶体硅太阳电池的双层钝化方法

Also Published As

Publication number Publication date
WO2013079800A1 (en) 2013-06-06

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Legal Events

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