FI20116217A - Piitä sisältävä n-tyypin aurinkokennopari - Google Patents
Piitä sisältävä n-tyypin aurinkokennopari Download PDFInfo
- Publication number
- FI20116217A FI20116217A FI20116217A FI20116217A FI20116217A FI 20116217 A FI20116217 A FI 20116217A FI 20116217 A FI20116217 A FI 20116217A FI 20116217 A FI20116217 A FI 20116217A FI 20116217 A FI20116217 A FI 20116217A
- Authority
- FI
- Finland
- Prior art keywords
- silicon
- type
- motor cell
- photoelectric
- photoelectric motor
- Prior art date
Links
- 229910052710 silicon Inorganic materials 0.000 title 1
- 239000010703 silicon Substances 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0216—Coatings
- H01L31/02161—Coatings for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/02167—Coatings for devices characterised by at least one potential jump barrier or surface barrier for solar cells
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/1804—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof comprising only elements of Group IV of the Periodic Table
- H01L31/182—Special manufacturing methods for polycrystalline Si, e.g. Si ribbon, poly Si ingots, thin films of polycrystalline Si
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0216—Coatings
- H01L31/02161—Coatings for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/02167—Coatings for devices characterised by at least one potential jump barrier or surface barrier for solar cells
- H01L31/02168—Coatings for devices characterised by at least one potential jump barrier or surface barrier for solar cells the coatings being antireflective or having enhancing optical properties for the solar cells
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/186—Particular post-treatment for the devices, e.g. annealing, impurity gettering, short-circuit elimination, recrystallisation
- H01L31/1868—Passivation
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/546—Polycrystalline silicon PV cells
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Sustainable Development (AREA)
- Life Sciences & Earth Sciences (AREA)
- Sustainable Energy (AREA)
- Manufacturing & Machinery (AREA)
- Chemical & Material Sciences (AREA)
- Crystallography & Structural Chemistry (AREA)
- Photovoltaic Devices (AREA)
Priority Applications (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
FI20116217A FI20116217A (fi) | 2011-12-02 | 2011-12-02 | Piitä sisältävä n-tyypin aurinkokennopari |
PCT/FI2012/051188 WO2013079800A1 (en) | 2011-12-02 | 2012-11-30 | An n-type silicon photovoltaic cell structure |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
FI20116217A FI20116217A (fi) | 2011-12-02 | 2011-12-02 | Piitä sisältävä n-tyypin aurinkokennopari |
Publications (1)
Publication Number | Publication Date |
---|---|
FI20116217A true FI20116217A (fi) | 2013-06-03 |
Family
ID=48534736
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
FI20116217A FI20116217A (fi) | 2011-12-02 | 2011-12-02 | Piitä sisältävä n-tyypin aurinkokennopari |
Country Status (2)
Country | Link |
---|---|
FI (1) | FI20116217A (fi) |
WO (1) | WO2013079800A1 (fi) |
Families Citing this family (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR20210010095A (ko) * | 2019-07-19 | 2021-01-27 | 엘지전자 주식회사 | 태양 전지 및 이의 제조 방법 |
FI130280B (fi) * | 2021-03-19 | 2023-05-31 | Beneq Oy | Menetelmä ja käyttö kalvoon liittyen ja kalvo |
Family Cites Families (11)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20070277875A1 (en) * | 2006-05-31 | 2007-12-06 | Kishor Purushottam Gadkaree | Thin film photovoltaic structure |
TWI320974B (en) * | 2006-09-27 | 2010-02-21 | Sino American Silicon Prod Inc | Solar cell and method of fabircating the same |
DE102007054384A1 (de) * | 2007-11-14 | 2009-05-20 | Institut Für Solarenergieforschung Gmbh | Verfahren zum Herstellen einer Solarzelle mit einer oberflächenpassivierenden Dielektrikumdoppelschicht und entsprechende Solarzelle |
DE102008045522A1 (de) * | 2008-09-03 | 2010-03-04 | Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. | Heterosolarzelle und Verfahren zur Herstellung von Heterosolarzellen |
US20100210060A1 (en) * | 2009-02-13 | 2010-08-19 | Peter Borden | Double anneal process for an improved rapid thermal oxide passivated solar cell |
KR101714097B1 (ko) * | 2009-04-21 | 2017-03-08 | 테트라썬, 아이엔씨. | 고효율 태양전지 구조 및 제조방법 |
EP2443664A2 (en) * | 2009-04-24 | 2012-04-25 | Wolf Oetting | Methods and devices for an electrically non-resistive layer formed from an electrically insulating material |
DE102009025977A1 (de) * | 2009-06-16 | 2010-12-23 | Q-Cells Se | Solarzelle und Herstellungsverfahren einer Solarzelle |
FR2953999B1 (fr) * | 2009-12-14 | 2012-01-20 | Total Sa | Cellule photovoltaique heterojonction a contact arriere |
DE102010017155B4 (de) * | 2010-05-31 | 2012-01-26 | Q-Cells Se | Solarzelle |
CN102064237A (zh) * | 2010-11-29 | 2011-05-18 | 奥特斯维能源(太仓)有限公司 | 一种用于晶体硅太阳电池的双层钝化方法 |
-
2011
- 2011-12-02 FI FI20116217A patent/FI20116217A/fi not_active Application Discontinuation
-
2012
- 2012-11-30 WO PCT/FI2012/051188 patent/WO2013079800A1/en active Application Filing
Also Published As
Publication number | Publication date |
---|---|
WO2013079800A1 (en) | 2013-06-06 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
FD | Application lapsed |