|
JPH0272642A
(ja)
|
1988-09-07 |
1990-03-12 |
Nec Corp |
基板の接続構造および接続方法
|
|
JPH0344067A
(ja)
|
1989-07-11 |
1991-02-25 |
Nec Corp |
半導体基板の積層方法
|
|
CA2083072C
(en)
|
1991-11-21 |
1998-02-03 |
Shinichi Hasegawa |
Method for manufacturing polyimide multilayer wiring substrate
|
|
US6008126A
(en)
|
1992-04-08 |
1999-12-28 |
Elm Technology Corporation |
Membrane dielectric isolation IC fabrication
|
|
US5471090A
(en)
|
1993-03-08 |
1995-11-28 |
International Business Machines Corporation |
Electronic structures having a joining geometry providing reduced capacitive loading
|
|
EP0651449B1
(en)
|
1993-11-01 |
2002-02-13 |
Matsushita Electric Industrial Co., Ltd. |
Electronic component and method for producing the same
|
|
US5408053A
(en)
|
1993-11-30 |
1995-04-18 |
Hughes Aircraft Company |
Layered planar transmission lines
|
|
US5608246A
(en)
|
1994-02-10 |
1997-03-04 |
Ramtron International Corporation |
Integration of high value capacitor with ferroelectric memory
|
|
KR960009074A
(ko)
|
1994-08-29 |
1996-03-22 |
모리시다 요이치 |
반도체 장치 및 그 제조방법
|
|
DE4433330C2
(de)
|
1994-09-19 |
1997-01-30 |
Fraunhofer Ges Forschung |
Verfahren zur Herstellung von Halbleiterstrukturen mit vorteilhaften Hochfrequenzeigenschaften sowie eine Halbleiterwaferstruktur
|
|
JP3979687B2
(ja)
|
1995-10-26 |
2007-09-19 |
アプライド マテリアルズ インコーポレイテッド |
ハロゲンをドープした酸化珪素膜の膜安定性を改良する方法
|
|
JP3210889B2
(ja)
|
1997-01-14 |
2001-09-25 |
シャープ株式会社 |
直交２偏波導波管入力装置およびそれを用いた衛星放送受信用のコンバータ
|
|
US6221753B1
(en)
|
1997-01-24 |
2001-04-24 |
Micron Technology, Inc. |
Flip chip technique for chip assembly
|
|
JP4032454B2
(ja)
|
1997-06-27 |
2008-01-16 |
ソニー株式会社 |
三次元回路素子の製造方法
|
|
US6097096A
(en)
|
1997-07-11 |
2000-08-01 |
Advanced Micro Devices |
Metal attachment method and structure for attaching substrates at low temperatures
|
|
JP3307307B2
(ja)
*
|
1997-12-19 |
2002-07-24 |
株式会社村田製作所 |
多層型高周波電子部品
|
|
JP2000100679A
(ja)
|
1998-09-22 |
2000-04-07 |
Canon Inc |
薄片化による基板間微小領域固相接合法及び素子構造
|
|
JP3792445B2
(ja)
*
|
1999-03-30 |
2006-07-05 |
日本特殊陶業株式会社 |
コンデンサ付属配線基板
|
|
JP3532788B2
(ja)
|
1999-04-13 |
2004-05-31 |
唯知 須賀 |
半導体装置及びその製造方法
|
|
JP2001102479A
(ja)
|
1999-09-27 |
2001-04-13 |
Toshiba Corp |
半導体集積回路装置およびその製造方法
|
|
US6984571B1
(en)
|
1999-10-01 |
2006-01-10 |
Ziptronix, Inc. |
Three dimensional device integration method and integrated device
|
|
US6300161B1
(en)
|
2000-02-15 |
2001-10-09 |
Alpine Microsystems, Inc. |
Module and method for interconnecting integrated circuits that facilitates high speed signal propagation with reduced noise
|
|
US6902987B1
(en)
|
2000-02-16 |
2005-06-07 |
Ziptronix, Inc. |
Method for low temperature bonding and bonded structure
|
|
US6418029B1
(en)
|
2000-02-28 |
2002-07-09 |
Mckee James S. |
Interconnect system having vertically mounted passive components on an underside of a substrate
|
|
JP4322402B2
(ja)
|
2000-06-22 |
2009-09-02 |
大日本印刷株式会社 |
プリント配線基板及びその製造方法
|
|
JP3440057B2
(ja)
|
2000-07-05 |
2003-08-25 |
唯知 須賀 |
半導体装置およびその製造方法
|
|
US6970362B1
(en)
*
|
2000-07-31 |
2005-11-29 |
Intel Corporation |
Electronic assemblies and systems comprising interposer with embedded capacitors
|
|
US6423640B1
(en)
|
2000-08-09 |
2002-07-23 |
Taiwan Semiconductor Manufacturing Co., Ltd. |
Headless CMP process for oxide planarization
|
|
JP2002353416A
(ja)
|
2001-05-25 |
2002-12-06 |
Sony Corp |
半導体記憶装置およびその製造方法
|
|
JP2003043281A
(ja)
|
2001-07-26 |
2003-02-13 |
Kyocera Chemical Corp |
光導波回路及びその製造方法
|
|
US6740922B2
(en)
|
2001-08-14 |
2004-05-25 |
Agere Systems Inc. |
Interdigitated capacitor and method of manufacturing thereof
|
|
TW506083B
(en)
|
2001-11-28 |
2002-10-11 |
Ind Tech Res Inst |
Method of using nano-tube to increase semiconductor device capacitance
|
|
US6759692B1
(en)
|
2002-02-04 |
2004-07-06 |
Ixys Corporation |
Gate driver with level shift circuit
|
|
US6897492B2
(en)
|
2002-02-04 |
2005-05-24 |
Ixys Corporation |
Power device with bi-directional level shift circuit
|
|
US6638808B1
(en)
|
2002-02-04 |
2003-10-28 |
Ixys Corporation |
Method of manufacturing gate driver with level shift circuit
|
|
US6887769B2
(en)
|
2002-02-06 |
2005-05-03 |
Intel Corporation |
Dielectric recess for wafer-to-wafer and die-to-die metal bonding and method of fabricating the same
|
|
US6762076B2
(en)
|
2002-02-20 |
2004-07-13 |
Intel Corporation |
Process of vertically stacking multiple wafers supporting different active integrated circuit (IC) devices
|
|
US6713871B2
(en)
|
2002-05-21 |
2004-03-30 |
Intel Corporation |
Surface mount solder method and apparatus for decoupling capacitance and process of making
|
|
US7105980B2
(en)
|
2002-07-03 |
2006-09-12 |
Sawtek, Inc. |
Saw filter device and method employing normal temperature bonding for producing desirable filter production and performance characteristics
|
|
JP4083502B2
(ja)
|
2002-08-19 |
2008-04-30 |
株式会社フジミインコーポレーテッド |
研磨方法及びそれに用いられる研磨用組成物
|
|
US7023093B2
(en)
|
2002-10-24 |
2006-04-04 |
International Business Machines Corporation |
Very low effective dielectric constant interconnect Structures and methods for fabricating the same
|
|
US7354798B2
(en)
|
2002-12-20 |
2008-04-08 |
International Business Machines Corporation |
Three-dimensional device fabrication method
|
|
US6962835B2
(en)
|
2003-02-07 |
2005-11-08 |
Ziptronix, Inc. |
Method for room temperature metal direct bonding
|
|
US6908027B2
(en)
|
2003-03-31 |
2005-06-21 |
Intel Corporation |
Complete device layer transfer without edge exclusion via direct wafer bonding and constrained bond-strengthening process
|
|
US7109092B2
(en)
|
2003-05-19 |
2006-09-19 |
Ziptronix, Inc. |
Method of room temperature covalent bonding
|
|
TWI275168B
(en)
|
2003-06-06 |
2007-03-01 |
Sanyo Electric Co |
Semiconductor device and method for making the same
|
|
US6867073B1
(en)
|
2003-10-21 |
2005-03-15 |
Ziptronix, Inc. |
Single mask via method and device
|
|
US6943294B2
(en)
|
2003-12-22 |
2005-09-13 |
Intel Corporation |
Integrating passive components on spacer in stacked dies
|
|
US7132743B2
(en)
|
2003-12-23 |
2006-11-07 |
Intel Corporation |
Integrated circuit package substrate having a thin film capacitor structure
|
|
JP2005191156A
(ja)
|
2003-12-25 |
2005-07-14 |
Mitsubishi Electric Corp |
電気部品内蔵配線板およびその製造方法
|
|
JP4260650B2
(ja)
|
2004-02-26 |
2009-04-30 |
新光電気工業株式会社 |
光電気複合基板及びその製造方法
|
|
US7842948B2
(en)
|
2004-02-27 |
2010-11-30 |
Nvidia Corporation |
Flip chip semiconductor die internal signal access system and method
|
|
TW200535878A
(en)
|
2004-04-16 |
2005-11-01 |
Ind Tech Res Inst |
Tunable passive device
|
|
US7186625B2
(en)
|
2004-05-27 |
2007-03-06 |
International Business Machines Corporation |
High density MIMCAP with a unit repeatable structure
|
|
JP4657640B2
(ja)
|
2004-07-21 |
2011-03-23 |
株式会社日立製作所 |
半導体装置
|
|
JP2006086155A
(ja)
*
|
2004-09-14 |
2006-03-30 |
Matsushita Electric Ind Co Ltd |
半導体装置及びその製造方法
|
|
US20060057945A1
(en)
|
2004-09-16 |
2006-03-16 |
Chia-Lin Hsu |
Chemical mechanical polishing process
|
|
US20060076634A1
(en)
|
2004-09-27 |
2006-04-13 |
Lauren Palmateer |
Method and system for packaging MEMS devices with incorporated getter
|
|
US7680464B2
(en)
|
2004-12-30 |
2010-03-16 |
Valeo Radar Systems, Inc. |
Waveguide—printed wiring board (PWB) interconnection
|
|
GB0505680D0
(en)
|
2005-03-22 |
2005-04-27 |
Cambridge Display Tech Ltd |
Apparatus and method for increased device lifetime in an organic electro-luminescent device
|
|
JP2006324567A
(ja)
*
|
2005-05-20 |
2006-11-30 |
Matsushita Electric Ind Co Ltd |
部品内蔵基板とその製造方法
|
|
US7355836B2
(en)
|
2005-06-07 |
2008-04-08 |
Intel Corporation |
Array capacitor for decoupling multiple voltage rails
|
|
US7291842B2
(en)
|
2005-06-14 |
2007-11-06 |
Varian Medical Systems Technologies, Inc. |
Photoconductor imagers with sandwich structure
|
|
JP4572759B2
(ja)
|
2005-07-06 |
2010-11-04 |
セイコーエプソン株式会社 |
半導体装置及び電子機器
|
|
US7485968B2
(en)
|
2005-08-11 |
2009-02-03 |
Ziptronix, Inc. |
3D IC method and device
|
|
JP4509972B2
(ja)
*
|
2005-09-01 |
2010-07-21 |
日本特殊陶業株式会社 |
配線基板、埋め込み用セラミックチップ
|
|
US7705691B2
(en)
|
2005-10-18 |
2010-04-27 |
Agency For Science, Technology & Research |
Capacitor interconnection
|
|
US7193423B1
(en)
|
2005-12-12 |
2007-03-20 |
International Business Machines Corporation |
Wafer-to-wafer alignments
|
|
TWI305119B
(en)
*
|
2005-12-22 |
2009-01-01 |
Phoenix Prec Technology Corp |
Circuit board structure having capacitance array and embedded electronic component and method for fabricating the same
|
|
TWI299552B
(en)
|
2006-03-24 |
2008-08-01 |
Advanced Semiconductor Eng |
Package structure
|
|
US7972683B2
(en)
|
2006-03-28 |
2011-07-05 |
Innovative Micro Technology |
Wafer bonding material with embedded conductive particles
|
|
US7750488B2
(en)
|
2006-07-10 |
2010-07-06 |
Tezzaron Semiconductor, Inc. |
Method for bonding wafers to produce stacked integrated circuits
|
|
US7633112B2
(en)
|
2006-08-24 |
2009-12-15 |
Samsung Electronics Co., Ltd. |
Metal-insulator-metal capacitor and method of manufacturing the same
|
|
US20080124835A1
(en)
|
2006-11-03 |
2008-05-29 |
International Business Machines Corporation |
Hermetic seal and reliable bonding structures for 3d applications
|
|
US7803693B2
(en)
|
2007-02-15 |
2010-09-28 |
John Trezza |
Bowed wafer hybridization compensation
|
|
DE102007009383A1
(de)
|
2007-02-20 |
2008-08-21 |
Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. |
Halbleiteranordnung und Verfahren zu deren Herstellung
|
|
JP2008258258A
(ja)
|
2007-04-02 |
2008-10-23 |
Sanyo Electric Co Ltd |
半導体装置
|
|
US7899407B2
(en)
|
2007-05-01 |
2011-03-01 |
Broadcom Corporation |
High frequency signal combining
|
|
JP2009048937A
(ja)
|
2007-08-22 |
2009-03-05 |
Rohm Co Ltd |
カーボンファイバー製造法、カーボンファイバー電子源およびフィールドエミッションディスプレイ装置
|
|
US7990676B2
(en)
|
2007-10-10 |
2011-08-02 |
Advanced Micro Devices, Inc. |
Density-conforming vertical plate capacitors exhibiting enhanced capacitance and methods of fabricating the same
|
|
WO2009055140A1
(en)
|
2007-10-26 |
2009-04-30 |
Hvvi Semiconductors, Inc. |
Semiconductor structure and method of manufacture
|
|
US7924113B2
(en)
|
2008-02-15 |
2011-04-12 |
Realtek Semiconductor Corp. |
Integrated front-end passive equalizer and method thereof
|
|
JP2009239247A
(ja)
*
|
2008-03-27 |
2009-10-15 |
Ibiden Co Ltd |
多層プリント配線板の製造方法
|
|
US8349635B1
(en)
|
2008-05-20 |
2013-01-08 |
Silicon Laboratories Inc. |
Encapsulated MEMS device and method to form the same
|
|
TWI400731B
(zh)
*
|
2008-08-29 |
2013-07-01 |
財團法人工業技術研究院 |
電容元件及其製造方法
|
|
US9893004B2
(en)
|
2011-07-27 |
2018-02-13 |
Broadpak Corporation |
Semiconductor interposer integration
|
|
JP2010103982A
(ja)
|
2008-09-25 |
2010-05-06 |
Sony Corp |
ミリ波伝送装置、ミリ波伝送方法、ミリ波伝送システム
|
|
US8344503B2
(en)
|
2008-11-25 |
2013-01-01 |
Freescale Semiconductor, Inc. |
3-D circuits with integrated passive devices
|
|
US7854173B2
(en)
|
2008-11-28 |
2010-12-21 |
The Hong Kong Polytechnic University |
Strain sensor
|
|
KR100945800B1
(ko)
|
2008-12-09 |
2010-03-05 |
김영혜 |
이종 접합 웨이퍼 제조방법
|
|
US20100178418A1
(en)
|
2009-01-09 |
2010-07-15 |
Enis Tuncer |
Device fabrication method for high power density capacitors
|
|
US8760342B2
(en)
|
2009-03-31 |
2014-06-24 |
Kyocera Corporation |
Circuit board, high frequency module, and radar apparatus
|
|
US8476165B2
(en)
|
2009-04-01 |
2013-07-02 |
Tokyo Electron Limited |
Method for thinning a bonding wafer
|
|
US8416079B2
(en)
|
2009-06-02 |
2013-04-09 |
3M Innovative Properties Company |
Switching radio frequency identification (RFID) tags
|
|
US8222104B2
(en)
|
2009-07-27 |
2012-07-17 |
International Business Machines Corporation |
Three dimensional integrated deep trench decoupling capacitors
|
|
US8143135B2
(en)
|
2009-10-08 |
2012-03-27 |
International Business Machines Corporation |
Embedded series deep trench capacitors and methods of manufacture
|
|
US8482132B2
(en)
|
2009-10-08 |
2013-07-09 |
International Business Machines Corporation |
Pad bonding employing a self-aligned plated liner for adhesion enhancement
|
|
FR2954585B1
(fr)
|
2009-12-23 |
2012-03-02 |
Soitec Silicon Insulator Technologies |
Procede de realisation d'une heterostructure avec minimisation de contrainte
|
|
US9219023B2
(en)
*
|
2010-01-19 |
2015-12-22 |
Globalfoundries Inc. |
3D chip stack having encapsulated chip-in-chip
|
|
US8810008B2
(en)
*
|
2010-03-18 |
2014-08-19 |
Nec Corporation |
Semiconductor element-embedded substrate, and method of manufacturing the substrate
|
|
WO2011121993A1
(ja)
*
|
2010-03-30 |
2011-10-06 |
株式会社村田製作所 |
部品集合体
|
|
US9048112B2
(en)
|
2010-06-29 |
2015-06-02 |
Qualcomm Incorporated |
Integrated voltage regulator with embedded passive device(s) for a stacked IC
|
|
EP2592915B1
(en)
*
|
2010-07-06 |
2022-01-26 |
Fujikura, Ltd. |
Manufacturing method for laminated wiring board
|
|
JP5517800B2
(ja)
|
2010-07-09 |
2014-06-11 |
キヤノン株式会社 |
固体撮像装置用の部材および固体撮像装置の製造方法
|
|
US8405135B2
(en)
|
2010-10-05 |
2013-03-26 |
International Business Machines Corporation |
3D via capacitor with a floating conductive plate for improved reliability
|
|
FR2966283B1
(fr)
|
2010-10-14 |
2012-11-30 |
Soi Tec Silicon On Insulator Tech Sa |
Procede pour realiser une structure de collage
|
|
US8377798B2
(en)
|
2010-11-10 |
2013-02-19 |
Taiwan Semiconductor Manufacturing Co., Ltd |
Method and structure for wafer to wafer bonding in semiconductor packaging
|
|
US8476146B2
(en)
|
2010-12-03 |
2013-07-02 |
Taiwan Semiconductor Manufacturing Company, Ltd. |
Reducing wafer distortion through a low CTE layer
|
|
KR101141457B1
(ko)
*
|
2010-12-08 |
2012-05-04 |
삼성전기주식회사 |
적층 세라믹 콘덴서 및 그 제조방법
|
|
TWI405322B
(zh)
*
|
2010-12-29 |
2013-08-11 |
財團法人工業技術研究院 |
內藏電容基板模組
|
|
FR2970594B1
(fr)
|
2011-01-13 |
2013-01-18 |
Batscap Sa |
Ensemble de stockage d'energie electrique a element empile en accordeon
|
|
US8620164B2
(en)
|
2011-01-20 |
2013-12-31 |
Intel Corporation |
Hybrid III-V silicon laser formed by direct bonding
|
|
US8988299B2
(en)
|
2011-02-17 |
2015-03-24 |
International Business Machines Corporation |
Integrated antenna for RFIC package applications
|
|
US8686537B2
(en)
|
2011-03-03 |
2014-04-01 |
Skyworks Solutions, Inc. |
Apparatus and methods for reducing impact of high RF loss plating
|
|
WO2012125237A2
(en)
|
2011-03-15 |
2012-09-20 |
Rambus Inc. |
Area and power efficient clock generation
|
|
US8501537B2
(en)
|
2011-03-31 |
2013-08-06 |
Soitec |
Methods for bonding semiconductor structures involving annealing processes, and bonded semiconductor structures formed using such methods
|
|
US8716105B2
(en)
|
2011-03-31 |
2014-05-06 |
Soitec |
Methods for bonding semiconductor structures involving annealing processes, and bonded semiconductor structures and intermediate structures formed using such methods
|
|
KR102378636B1
(ko)
|
2011-05-24 |
2022-03-25 |
소니그룹주식회사 |
반도체 장치
|
|
JP5982748B2
(ja)
|
2011-08-01 |
2016-08-31 |
ソニー株式会社 |
半導体装置、半導体装置の製造方法、および電子機器
|
|
WO2013009711A1
(en)
|
2011-07-08 |
2013-01-17 |
Timler John P |
Insulator based upon one or more dielectric structures
|
|
US8697493B2
(en)
|
2011-07-18 |
2014-04-15 |
Soitec |
Bonding surfaces for direct bonding of semiconductor structures
|
|
US8970003B2
(en)
|
2011-07-29 |
2015-03-03 |
Tessera, Inc. |
Embedded passive integration
|
|
US9324659B2
(en)
|
2011-08-01 |
2016-04-26 |
Stats Chippac, Ltd. |
Semiconductor device and method of forming POP with stacked semiconductor die and bumps formed directly on the lower die
|
|
US8441131B2
(en)
|
2011-09-12 |
2013-05-14 |
Globalfoundries Inc. |
Strain-compensating fill patterns for controlling semiconductor chip package interactions
|
|
TWI438882B
(zh)
|
2011-11-01 |
2014-05-21 |
欣興電子股份有限公司 |
嵌埋電容元件之封裝基板及其製法
|
|
JP5703206B2
(ja)
|
2011-12-19 |
2015-04-15 |
株式会社日立製作所 |
半導体装置、信号伝送システム及び信号伝送方法
|
|
US8590389B2
(en)
*
|
2012-02-10 |
2013-11-26 |
Metrodyne Microsystems Corporation, R.O.C. |
MEMS pressure sensor device and manufacturing method thereof
|
|
JP5933989B2
(ja)
*
|
2012-02-28 |
2016-06-15 |
京セラ株式会社 |
部品内蔵基板
|
|
KR101326999B1
(ko)
*
|
2012-03-07 |
2013-11-13 |
엘지이노텍 주식회사 |
인쇄회로기판 및 그의 제조 방법
|
|
US20130265733A1
(en)
|
2012-04-04 |
2013-10-10 |
Texas Instruments Incorporated |
Interchip communication using an embedded dielectric waveguide
|
|
CN103377911B
(zh)
|
2012-04-16 |
2016-09-21 |
中国科学院微电子研究所 |
提高化学机械平坦化工艺均匀性的方法
|
|
US9142517B2
(en)
|
2012-06-05 |
2015-09-22 |
Taiwan Semiconductor Manufacturing Company, Ltd. |
Hybrid bonding mechanisms for semiconductor wafers
|
|
US8809123B2
(en)
|
2012-06-05 |
2014-08-19 |
Taiwan Semiconductor Manufacturing Company, Ltd. |
Three dimensional integrated circuit structures and hybrid bonding methods for semiconductor wafers
|
|
US8698323B2
(en)
|
2012-06-18 |
2014-04-15 |
Invensas Corporation |
Microelectronic assembly tolerant to misplacement of microelectronic elements therein
|
|
US9502424B2
(en)
|
2012-06-29 |
2016-11-22 |
Qualcomm Incorporated |
Integrated circuit device featuring an antifuse and method of making same
|
|
TWI497661B
(zh)
|
2012-08-15 |
2015-08-21 |
財團法人工業技術研究院 |
半導體基板
|
|
US9343393B2
(en)
|
2012-08-15 |
2016-05-17 |
Industrial Technology Research Institute |
Semiconductor substrate assembly with embedded resistance element
|
|
US8829673B2
(en)
|
2012-08-17 |
2014-09-09 |
Taiwan Semiconductor Manufacturing Company, Ltd. |
Bonded structures for package and substrate
|
|
US8735219B2
(en)
|
2012-08-30 |
2014-05-27 |
Ziptronix, Inc. |
Heterogeneous annealing method and device
|
|
KR101420517B1
(ko)
*
|
2012-10-31 |
2014-07-16 |
삼성전기주식회사 |
적층 세라믹 캐패시터 및 이를 포함하는 인쇄회로기판
|
|
US9386701B2
(en)
*
|
2012-11-30 |
2016-07-05 |
Samsung Electro-Mechanics Co., Ltd. |
Electronic component embedded printed circuit board
|
|
DE102012224310A1
(de)
|
2012-12-21 |
2014-06-26 |
Tesa Se |
Gettermaterial enthaltendes Klebeband
|
|
US20140175655A1
(en)
|
2012-12-22 |
2014-06-26 |
Industrial Technology Research Institute |
Chip bonding structure and manufacturing method thereof
|
|
KR101375938B1
(ko)
|
2012-12-27 |
2014-03-21 |
한국과학기술원 |
저전력, 고속 멀티-채널 유전체 웨이브가이드를 이용한 칩-대-칩 인터페이스
|
|
KR101472638B1
(ko)
*
|
2012-12-31 |
2014-12-15 |
삼성전기주식회사 |
수동소자 내장기판
|
|
US8916448B2
(en)
|
2013-01-09 |
2014-12-23 |
International Business Machines Corporation |
Metal to metal bonding for stacked (3D) integrated circuits
|
|
TWI518991B
(zh)
|
2013-02-08 |
2016-01-21 |
巽晨國際股份有限公司 |
Integrated antenna and integrated circuit components of the shielding module
|
|
US9299649B2
(en)
|
2013-02-08 |
2016-03-29 |
Taiwan Semiconductor Manufacturing Company, Ltd. |
3D packages and methods for forming the same
|
|
US8946784B2
(en)
|
2013-02-18 |
2015-02-03 |
Taiwan Semiconductor Manufacturing Company, Ltd. |
Method and apparatus for image sensor packaging
|
|
US9263186B2
(en)
|
2013-03-05 |
2016-02-16 |
Qualcomm Incorporated |
DC/ AC dual function Power Delivery Network (PDN) decoupling capacitor
|
|
US9105485B2
(en)
|
2013-03-08 |
2015-08-11 |
Taiwan Semiconductor Manufacturing Company, Ltd. |
Bonding structures and methods of forming the same
|
|
US9029983B2
(en)
|
2013-03-12 |
2015-05-12 |
Qualcomm Incorporated |
Metal-insulator-metal (MIM) capacitor
|
|
US9443796B2
(en)
|
2013-03-15 |
2016-09-13 |
Taiwan Semiconductor Manufacturing Company, Ltd. |
Air trench in packages incorporating hybrid bonding
|
|
US8802538B1
(en)
|
2013-03-15 |
2014-08-12 |
Taiwan Semiconductor Manufacturing Company, Ltd. |
Methods for hybrid wafer bonding
|
|
US9728453B2
(en)
*
|
2013-03-15 |
2017-08-08 |
Taiwan Semiconductor Manufacturing Company, Ltd. |
Methods for hybrid wafer bonding integrated with CMOS processing
|
|
JP2014192321A
(ja)
*
|
2013-03-27 |
2014-10-06 |
Ibiden Co Ltd |
電子部品内蔵配線板およびその製造方法
|
|
US9064937B2
(en)
|
2013-05-30 |
2015-06-23 |
International Business Machines Corporation |
Substrate bonding with diffusion barrier structures
|
|
US9929050B2
(en)
|
2013-07-16 |
2018-03-27 |
Taiwan Semiconductor Manufacturing Company, Ltd. |
Mechanisms for forming three-dimensional integrated circuit (3DIC) stacking structure
|
|
US9723716B2
(en)
|
2013-09-27 |
2017-08-01 |
Infineon Technologies Ag |
Contact pad structure, an electronic component, and a method for manufacturing a contact pad structure
|
|
US9257399B2
(en)
|
2013-10-17 |
2016-02-09 |
Taiwan Semiconductor Manufacturing Company, Ltd. |
3D integrated circuit and methods of forming the same
|
|
JP2015115446A
(ja)
|
2013-12-11 |
2015-06-22 |
株式会社東芝 |
半導体装置の製造方法
|
|
US9437572B2
(en)
|
2013-12-18 |
2016-09-06 |
Taiwan Semiconductor Manufacturing Company, Ltd. |
Conductive pad structure for hybrid bonding and methods of forming same
|
|
US9508637B2
(en)
|
2014-01-06 |
2016-11-29 |
Taiwan Semiconductor Manufacturing Company, Ltd. |
Protrusion bump pads for bond-on-trace processing
|
|
US10090327B2
(en)
|
2014-01-17 |
2018-10-02 |
Taiwan Semiconductor Manufacturing Co., Ltd |
Semiconductor device and method for forming the same
|
|
US9472479B2
(en)
|
2014-01-31 |
2016-10-18 |
Corning Incorporated |
Methods and apparatus for providing an interposer for interconnecting semiconductor chips
|
|
US20150262902A1
(en)
|
2014-03-12 |
2015-09-17 |
Invensas Corporation |
Integrated circuits protected by substrates with cavities, and methods of manufacture
|
|
US9418924B2
(en)
*
|
2014-03-20 |
2016-08-16 |
Invensas Corporation |
Stacked die integrated circuit
|
|
US9230941B2
(en)
|
2014-03-28 |
2016-01-05 |
Taiwan Semiconductor Manufacturing Company, Ltd. |
Bonding structure for stacked semiconductor devices
|
|
US9299736B2
(en)
|
2014-03-28 |
2016-03-29 |
Taiwan Semiconductor Manufacturing Company, Ltd. |
Hybrid bonding with uniform pattern density
|
|
US9853361B2
(en)
|
2014-05-02 |
2017-12-26 |
The Invention Science Fund I Llc |
Surface scattering antennas with lumped elements
|
|
US9165793B1
(en)
*
|
2014-05-02 |
2015-10-20 |
Invensas Corporation |
Making electrical components in handle wafers of integrated circuit packages
|
|
US9472458B2
(en)
|
2014-06-04 |
2016-10-18 |
Semiconductor Components Industries, Llc |
Method of reducing residual contamination in singulated semiconductor die
|
|
KR102275705B1
(ko)
|
2014-07-11 |
2021-07-09 |
삼성전자주식회사 |
웨이퍼 대 웨이퍼 접합 구조
|
|
US9372316B2
(en)
|
2014-09-11 |
2016-06-21 |
Taiwan Semiconductor Manufacturing Co., Ltd. |
Silicon interface for dielectric slab waveguide
|
|
US9536848B2
(en)
|
2014-10-16 |
2017-01-03 |
Globalfoundries Inc. |
Bond pad structure for low temperature flip chip bonding
|
|
US9394161B2
(en)
|
2014-11-14 |
2016-07-19 |
Taiwan Semiconductor Manufacturing Co., Ltd. |
MEMS and CMOS integration with low-temperature bonding
|
|
DE102014117723B4
(de)
|
2014-12-02 |
2019-01-24 |
Infineon Technologies Ag |
Halbleitervorrichtung und Verfahren zum Herstellen einer Halbleitervorrichtung
|
|
US11069734B2
(en)
|
2014-12-11 |
2021-07-20 |
Invensas Corporation |
Image sensor device
|
|
US20160372449A1
(en)
|
2014-12-24 |
2016-12-22 |
Intel Corporation |
Integrated passive components in a stacked integrated circuit package
|
|
JP2016143853A
(ja)
|
2015-02-05 |
2016-08-08 |
富士通株式会社 |
積層型半導体装置
|
|
US20160254345A1
(en)
|
2015-02-27 |
2016-09-01 |
Globalfoundries Inc. |
Metal-insulator-metal capacitor architecture
|
|
US9537199B2
(en)
|
2015-03-19 |
2017-01-03 |
International Business Machines Corporation |
Package structure having an integrated waveguide configured to communicate between first and second integrated circuit chips
|
|
KR101681410B1
(ko)
|
2015-04-20 |
2016-11-30 |
삼성전기주식회사 |
커패시터 부품
|
|
WO2016170894A1
(ja)
*
|
2015-04-21 |
2016-10-27 |
株式会社村田製作所 |
配線基板及び積層チップコンデンサ
|
|
US9741620B2
(en)
|
2015-06-24 |
2017-08-22 |
Invensas Corporation |
Structures and methods for reliable packages
|
|
US9656852B2
(en)
|
2015-07-06 |
2017-05-23 |
Taiwan Semiconductor Manufacturing Company Ltd. |
CMOS-MEMS device structure, bonding mesa structure and associated method
|
|
US10886250B2
(en)
|
2015-07-10 |
2021-01-05 |
Invensas Corporation |
Structures and methods for low temperature bonding using nanoparticles
|
|
CN108025907A
(zh)
|
2015-07-15 |
2018-05-11 |
迪维科·迈克尔 |
可调谐电抗装置以及制造和使用该装置的方法
|
|
US10075657B2
(en)
|
2015-07-21 |
2018-09-11 |
Fermi Research Alliance, Llc |
Edgeless large area camera system
|
|
US9728521B2
(en)
|
2015-07-23 |
2017-08-08 |
Taiwan Semiconductor Manufacturing Co., Ltd. |
Hybrid bond using a copper alloy for yield improvement
|
|
US9559081B1
(en)
|
2015-08-21 |
2017-01-31 |
Apple Inc. |
Independent 3D stacking
|
|
US9627373B2
(en)
|
2015-08-25 |
2017-04-18 |
International Business Machines Corporation |
CMOS compatible fuse or resistor using self-aligned contacts
|
|
US9953941B2
(en)
|
2015-08-25 |
2018-04-24 |
Invensas Bonding Technologies, Inc. |
Conductive barrier direct hybrid bonding
|
|
US9496239B1
(en)
|
2015-12-11 |
2016-11-15 |
International Business Machines Corporation |
Nitride-enriched oxide-to-oxide 3D wafer bonding
|
|
US9852988B2
(en)
|
2015-12-18 |
2017-12-26 |
Invensas Bonding Technologies, Inc. |
Increased contact alignment tolerance for direct bonding
|
|
US9881882B2
(en)
|
2016-01-06 |
2018-01-30 |
Mediatek Inc. |
Semiconductor package with three-dimensional antenna
|
|
US9923011B2
(en)
|
2016-01-12 |
2018-03-20 |
Taiwan Semiconductor Manufacturing Co., Ltd. |
Semiconductor device structure with stacked semiconductor dies
|
|
US10446532B2
(en)
|
2016-01-13 |
2019-10-15 |
Invensas Bonding Technologies, Inc. |
Systems and methods for efficient transfer of semiconductor elements
|
|
US10636767B2
(en)
|
2016-02-29 |
2020-04-28 |
Invensas Corporation |
Correction die for wafer/die stack
|
|
WO2017159377A1
(ja)
*
|
2016-03-18 |
2017-09-21 |
株式会社村田製作所 |
積層コンデンサ内蔵基板
|
|
US10026716B2
(en)
|
2016-04-15 |
2018-07-17 |
Taiwan Semiconductor Manufacturing Company, Ltd. |
3DIC formation with dies bonded to formed RDLs
|
|
US10204893B2
(en)
|
2016-05-19 |
2019-02-12 |
Invensas Bonding Technologies, Inc. |
Stacked dies and methods for forming bonded structures
|
|
US10522400B2
(en)
|
2016-05-27 |
2019-12-31 |
Taiwan Semiconductor Manufacturing Co., Ltd. |
Embedded temperature control system for a biosensor
|
|
KR102505856B1
(ko)
|
2016-06-09 |
2023-03-03 |
삼성전자 주식회사 |
웨이퍼 대 웨이퍼 접합 구조체
|
|
US9941241B2
(en)
|
2016-06-30 |
2018-04-10 |
International Business Machines Corporation |
Method for wafer-wafer bonding
|
|
US9716088B1
(en)
|
2016-06-30 |
2017-07-25 |
International Business Machines Corporation |
3D bonded semiconductor structure with an embedded capacitor
|
|
US9892961B1
(en)
|
2016-08-09 |
2018-02-13 |
International Business Machines Corporation |
Air gap spacer formation for nano-scale semiconductor devices
|
|
US10446487B2
(en)
|
2016-09-30 |
2019-10-15 |
Invensas Bonding Technologies, Inc. |
Interface structures and methods for forming same
|
|
US10719762B2
(en)
|
2017-08-03 |
2020-07-21 |
Xcelsis Corporation |
Three dimensional chip structure implementing machine trained network
|
|
US10672663B2
(en)
|
2016-10-07 |
2020-06-02 |
Xcelsis Corporation |
3D chip sharing power circuit
|
|
US10580735B2
(en)
|
2016-10-07 |
2020-03-03 |
Xcelsis Corporation |
Stacked IC structure with system level wiring on multiple sides of the IC die
|
|
US10163750B2
(en)
|
2016-12-05 |
2018-12-25 |
Taiwan Semiconductor Manufacturing Company, Ltd. |
Package structure for heat dissipation
|
|
US10453832B2
(en)
|
2016-12-15 |
2019-10-22 |
Taiwan Semiconductor Manufacturing Co., Ltd. |
Seal ring structures and methods of forming same
|
|
US10002844B1
(en)
|
2016-12-21 |
2018-06-19 |
Invensas Bonding Technologies, Inc. |
Bonded structures
|
|
KR102320673B1
(ko)
|
2016-12-28 |
2021-11-01 |
인벤사스 본딩 테크놀로지스 인코포레이티드 |
적층된 기판의 처리
|
|
US20180182665A1
(en)
|
2016-12-28 |
2018-06-28 |
Invensas Bonding Technologies, Inc. |
Processed Substrate
|
|
KR20190092584A
(ko)
|
2016-12-29 |
2019-08-07 |
인벤사스 본딩 테크놀로지스 인코포레이티드 |
집적된 수동 컴포넌트를 구비한 접합된 구조체
|
|
US20180190583A1
(en)
|
2016-12-29 |
2018-07-05 |
Invensas Bonding Technologies, Inc. |
Bonded structures with integrated passive component
|
|
US10276909B2
(en)
|
2016-12-30 |
2019-04-30 |
Invensas Bonding Technologies, Inc. |
Structure comprising at least a first element bonded to a carrier having a closed metallic channel waveguide formed therein
|
|
US10431614B2
(en)
|
2017-02-01 |
2019-10-01 |
Semiconductor Components Industries, Llc |
Edge seals for semiconductor packages
|
|
US10522499B2
(en)
|
2017-02-09 |
2019-12-31 |
Invensas Bonding Technologies, Inc. |
Bonded structures
|
|
WO2018169968A1
(en)
|
2017-03-16 |
2018-09-20 |
Invensas Corporation |
Direct-bonded led arrays and applications
|
|
US10515913B2
(en)
|
2017-03-17 |
2019-12-24 |
Invensas Bonding Technologies, Inc. |
Multi-metal contact structure
|
|
US10508030B2
(en)
|
2017-03-21 |
2019-12-17 |
Invensas Bonding Technologies, Inc. |
Seal for microelectronic assembly
|
|
JP6640780B2
(ja)
|
2017-03-22 |
2020-02-05 |
キオクシア株式会社 |
半導体装置の製造方法および半導体装置
|
|
US10784191B2
(en)
|
2017-03-31 |
2020-09-22 |
Invensas Bonding Technologies, Inc. |
Interface structures and methods for forming same
|
|
US10269756B2
(en)
|
2017-04-21 |
2019-04-23 |
Invensas Bonding Technologies, Inc. |
Die processing
|
|
US10580823B2
(en)
|
2017-05-03 |
2020-03-03 |
United Microelectronics Corp. |
Wafer level packaging method
|
|
US10879212B2
(en)
|
2017-05-11 |
2020-12-29 |
Invensas Bonding Technologies, Inc. |
Processed stacked dies
|
|
US10446441B2
(en)
|
2017-06-05 |
2019-10-15 |
Invensas Corporation |
Flat metal features for microelectronics applications
|
|
US10217720B2
(en)
|
2017-06-15 |
2019-02-26 |
Invensas Corporation |
Multi-chip modules formed using wafer-level processing of a reconstitute wafer
|
|
US10840205B2
(en)
|
2017-09-24 |
2020-11-17 |
Invensas Bonding Technologies, Inc. |
Chemical mechanical polishing for hybrid bonding
|
|
US11195748B2
(en)
|
2017-09-27 |
2021-12-07 |
Invensas Corporation |
Interconnect structures and methods for forming same
|
|
US11031285B2
(en)
|
2017-10-06 |
2021-06-08 |
Invensas Bonding Technologies, Inc. |
Diffusion barrier collar for interconnects
|
|
US11251157B2
(en)
|
2017-11-01 |
2022-02-15 |
Taiwan Semiconductor Manufacturing Company, Ltd. |
Die stack structure with hybrid bonding structure and method of fabricating the same and package
|
|
US11011503B2
(en)
|
2017-12-15 |
2021-05-18 |
Invensas Bonding Technologies, Inc. |
Direct-bonded optoelectronic interconnect for high-density integrated photonics
|
|
US11380597B2
(en)
|
2017-12-22 |
2022-07-05 |
Invensas Bonding Technologies, Inc. |
Bonded structures
|
|
US10923408B2
(en)
|
2017-12-22 |
2021-02-16 |
Invensas Bonding Technologies, Inc. |
Cavity packages
|
|
US11127738B2
(en)
|
2018-02-09 |
2021-09-21 |
Xcelsis Corporation |
Back biasing of FD-SOI circuit blocks
|
|
US10727219B2
(en)
|
2018-02-15 |
2020-07-28 |
Invensas Bonding Technologies, Inc. |
Techniques for processing devices
|
|
US11169326B2
(en)
|
2018-02-26 |
2021-11-09 |
Invensas Bonding Technologies, Inc. |
Integrated optical waveguides, direct-bonded waveguide interface joints, optical routing and interconnects
|
|
US11256004B2
(en)
|
2018-03-20 |
2022-02-22 |
Invensas Bonding Technologies, Inc. |
Direct-bonded lamination for improved image clarity in optical devices
|
|
US10991804B2
(en)
|
2018-03-29 |
2021-04-27 |
Xcelsis Corporation |
Transistor level interconnection methodologies utilizing 3D interconnects
|
|
US11056348B2
(en)
|
2018-04-05 |
2021-07-06 |
Invensas Bonding Technologies, Inc. |
Bonding surfaces for microelectronics
|
|
US10790262B2
(en)
|
2018-04-11 |
2020-09-29 |
Invensas Bonding Technologies, Inc. |
Low temperature bonded structures
|
|
US10964664B2
(en)
|
2018-04-20 |
2021-03-30 |
Invensas Bonding Technologies, Inc. |
DBI to Si bonding for simplified handle wafer
|
|
US11398258B2
(en)
|
2018-04-30 |
2022-07-26 |
Invensas Llc |
Multi-die module with low power operation
|
|
US10403577B1
(en)
|
2018-05-03 |
2019-09-03 |
Invensas Corporation |
Dielets on flexible and stretchable packaging for microelectronics
|
|
US11004757B2
(en)
|
2018-05-14 |
2021-05-11 |
Invensas Bonding Technologies, Inc. |
Bonded structures
|
|
US11276676B2
(en)
|
2018-05-15 |
2022-03-15 |
Invensas Bonding Technologies, Inc. |
Stacked devices and methods of fabrication
|
|
US10923413B2
(en)
|
2018-05-30 |
2021-02-16 |
Xcelsis Corporation |
Hard IP blocks with physically bidirectional passageways
|
|
WO2019241367A1
(en)
|
2018-06-12 |
2019-12-19 |
Invensas Bonding Technologies, Inc. |
Interlayer connection of stacked microelectronic components
|
|
US11749645B2
(en)
|
2018-06-13 |
2023-09-05 |
Adeia Semiconductor Bonding Technologies Inc. |
TSV as pad
|
|
US11393779B2
(en)
|
2018-06-13 |
2022-07-19 |
Invensas Bonding Technologies, Inc. |
Large metal pads over TSV
|
|
US10910344B2
(en)
|
2018-06-22 |
2021-02-02 |
Xcelsis Corporation |
Systems and methods for releveled bump planes for chiplets
|
|
WO2020010056A1
(en)
|
2018-07-03 |
2020-01-09 |
Invensas Bonding Technologies, Inc. |
Techniques for joining dissimilar materials in microelectronics
|
|
WO2020010265A1
(en)
|
2018-07-06 |
2020-01-09 |
Invensas Bonding Technologies, Inc. |
Microelectronic assemblies
|
|
US11158606B2
(en)
|
2018-07-06 |
2021-10-26 |
Invensas Bonding Technologies, Inc. |
Molded direct bonded and interconnected stack
|
|
US12406959B2
(en)
|
2018-07-26 |
2025-09-02 |
Adeia Semiconductor Bonding Technologies Inc. |
Post CMP processing for hybrid bonding
|
|
US11515291B2
(en)
|
2018-08-28 |
2022-11-29 |
Adeia Semiconductor Inc. |
Integrated voltage regulator and passive components
|
|
US11296044B2
(en)
|
2018-08-29 |
2022-04-05 |
Invensas Bonding Technologies, Inc. |
Bond enhancement structure in microelectronics for trapping contaminants during direct-bonding processes
|
|
US11011494B2
(en)
|
2018-08-31 |
2021-05-18 |
Invensas Bonding Technologies, Inc. |
Layer structures for making direct metal-to-metal bonds at low temperatures in microelectronics
|
|
US10796990B2
(en)
|
2018-09-19 |
2020-10-06 |
Taiwan Semiconductor Manufacturing Company, Ltd. |
Semiconductor structure, package structure, and manufacturing method thereof
|
|
US11158573B2
(en)
|
2018-10-22 |
2021-10-26 |
Invensas Bonding Technologies, Inc. |
Interconnect structures
|
|
US11244920B2
(en)
|
2018-12-18 |
2022-02-08 |
Invensas Bonding Technologies, Inc. |
Method and structures for low temperature device bonding
|
|
CN113330557A
(zh)
|
2019-01-14 |
2021-08-31 |
伊文萨思粘合技术公司 |
键合结构
|
|
US11387202B2
(en)
|
2019-03-01 |
2022-07-12 |
Invensas Llc |
Nanowire bonding interconnect for fine-pitch microelectronics
|
|
US11901281B2
(en)
|
2019-03-11 |
2024-02-13 |
Adeia Semiconductor Bonding Technologies Inc. |
Bonded structures with integrated passive component
|
|
US10854578B2
(en)
|
2019-03-29 |
2020-12-01 |
Invensas Corporation |
Diffused bitline replacement in stacked wafer memory
|
|
US11373963B2
(en)
|
2019-04-12 |
2022-06-28 |
Invensas Bonding Technologies, Inc. |
Protective elements for bonded structures
|
|
US11610846B2
(en)
|
2019-04-12 |
2023-03-21 |
Adeia Semiconductor Bonding Technologies Inc. |
Protective elements for bonded structures including an obstructive element
|
|
US11205625B2
(en)
|
2019-04-12 |
2021-12-21 |
Invensas Bonding Technologies, Inc. |
Wafer-level bonding of obstructive elements
|
|
US11355404B2
(en)
|
2019-04-22 |
2022-06-07 |
Invensas Bonding Technologies, Inc. |
Mitigating surface damage of probe pads in preparation for direct bonding of a substrate
|
|
US11385278B2
(en)
|
2019-05-23 |
2022-07-12 |
Invensas Bonding Technologies, Inc. |
Security circuitry for bonded structures
|
|
US12374641B2
(en)
|
2019-06-12 |
2025-07-29 |
Adeia Semiconductor Bonding Technologies Inc. |
Sealed bonded structures and methods for forming the same
|
|
US11296053B2
(en)
|
2019-06-26 |
2022-04-05 |
Invensas Bonding Technologies, Inc. |
Direct bonded stack structures for increased reliability and improved yield in microelectronics
|
|
US12080672B2
(en)
|
2019-09-26 |
2024-09-03 |
Adeia Semiconductor Bonding Technologies Inc. |
Direct gang bonding methods including directly bonding first element to second element to form bonded structure without adhesive
|
|
US12113054B2
(en)
|
2019-10-21 |
2024-10-08 |
Adeia Semiconductor Technologies Llc |
Non-volatile dynamic random access memory
|
|
US11862602B2
(en)
|
2019-11-07 |
2024-01-02 |
Adeia Semiconductor Technologies Llc |
Scalable architecture for reduced cycles across SOC
|
|
US11762200B2
(en)
|
2019-12-17 |
2023-09-19 |
Adeia Semiconductor Bonding Technologies Inc. |
Bonded optical devices
|
|
GB2590643B
(en)
|
2019-12-20 |
2022-08-03 |
Graphcore Ltd |
Method of manufacturing a computer device
|
|
US11876076B2
(en)
|
2019-12-20 |
2024-01-16 |
Adeia Semiconductor Technologies Llc |
Apparatus for non-volatile random access memory stacks
|
|
US11721653B2
(en)
|
2019-12-23 |
2023-08-08 |
Adeia Semiconductor Bonding Technologies Inc. |
Circuitry for electrical redundancy in bonded structures
|
|
KR20260009391A
(ko)
|
2019-12-23 |
2026-01-19 |
아데이아 세미컨덕터 본딩 테크놀로지스 인코포레이티드 |
결합형 구조체를 위한 전기적 리던던시
|
|
US20210242152A1
(en)
|
2020-02-05 |
2021-08-05 |
Invensas Bonding Technologies, Inc. |
Selective alteration of interconnect pads for direct bonding
|
|
CN115943489A
(zh)
|
2020-03-19 |
2023-04-07 |
隔热半导体粘合技术公司 |
用于直接键合结构的尺寸补偿控制
|
|
US11742314B2
(en)
|
2020-03-31 |
2023-08-29 |
Adeia Semiconductor Bonding Technologies Inc. |
Reliable hybrid bonded apparatus
|
|
US11735523B2
(en)
|
2020-05-19 |
2023-08-22 |
Adeia Semiconductor Bonding Technologies Inc. |
Laterally unconfined structure
|
|
US11631647B2
(en)
|
2020-06-30 |
2023-04-18 |
Adeia Semiconductor Bonding Technologies Inc. |
Integrated device packages with integrated device die and dummy element
|
|
US11728273B2
(en)
|
2020-09-04 |
2023-08-15 |
Adeia Semiconductor Bonding Technologies Inc. |
Bonded structure with interconnect structure
|
|
US11764177B2
(en)
|
2020-09-04 |
2023-09-19 |
Adeia Semiconductor Bonding Technologies Inc. |
Bonded structure with interconnect structure
|
|
US11264357B1
(en)
|
2020-10-20 |
2022-03-01 |
Invensas Corporation |
Mixed exposure for large die
|
|
WO2022094587A1
(en)
|
2020-10-29 |
2022-05-05 |
Invensas Bonding Technologies, Inc. |
Direct bonding methods and structures
|
|
KR20230095110A
(ko)
|
2020-10-29 |
2023-06-28 |
아데이아 세미컨덕터 본딩 테크놀로지스 인코포레이티드 |
직접 접합 방법 및 구조체
|
|
CN116762163A
(zh)
|
2020-12-28 |
2023-09-15 |
美商艾德亚半导体接合科技有限公司 |
具有贯穿衬底过孔的结构及其形成方法
|
|
WO2022147429A1
(en)
|
2020-12-28 |
2022-07-07 |
Invensas Bonding Technologies, Inc. |
Structures with through-substrate vias and methods for forming the same
|
|
TW202243197A
(zh)
|
2020-12-30 |
2022-11-01 |
美商英帆薩斯邦德科技有限公司 |
直接接合結構
|
|
CN116848631A
(zh)
|
2020-12-30 |
2023-10-03 |
美商艾德亚半导体接合科技有限公司 |
具有导电特征的结构及其形成方法
|
|
WO2022187402A1
(en)
|
2021-03-03 |
2022-09-09 |
Invensas Bonding Technologies, Inc. |
Contact structures for direct bonding
|
|
CN117296132A
(zh)
|
2021-03-31 |
2023-12-26 |
美商艾德亚半导体接合科技有限公司 |
载体的直接接合和去接合
|
|
US12550799B2
(en)
|
2021-03-31 |
2026-02-10 |
Adeia Semiconductor Bonding Technologies Inc. |
Direct bonding methods and structures
|
|
EP4315398A4
(en)
|
2021-03-31 |
2025-03-05 |
Adeia Semiconductor Bonding Technologies Inc. |
DIRECT ADHESION AND REMOVING A CARRIER
|
|
JP2024524391A
(ja)
|
2021-06-30 |
2024-07-05 |
アデイア セミコンダクター ボンディング テクノロジーズ インコーポレイテッド |
接合層内にルーティング構造体を有する素子
|
|
JP2024530539A
(ja)
|
2021-07-16 |
2024-08-22 |
アデイア セミコンダクター ボンディング テクノロジーズ インコーポレイテッド |
接合構造のための光学的妨害保護素子
|
|
KR20240036698A
(ko)
|
2021-08-02 |
2024-03-20 |
아데이아 세미컨덕터 본딩 테크놀로지스 인코포레이티드 |
결합 구조체를 위한 보호 반도체 소자
|
|
JP2024532903A
(ja)
|
2021-09-01 |
2024-09-10 |
アデイア セミコンダクター テクノロジーズ リミテッド ライアビリティ カンパニー |
インターポーザを備えた積層構造
|
|
US20230067677A1
(en)
|
2021-09-01 |
2023-03-02 |
Invensas Bonding Technologies, Inc. |
Sequences and equipment for direct bonding
|
|
US20230115122A1
(en)
|
2021-09-14 |
2023-04-13 |
Adeia Semiconductor Bonding Technologies Inc. |
Method of bonding thin substrates
|
|
EP4406020A4
(en)
|
2021-09-24 |
2026-01-21 |
Adeia Semiconductor Bonding Technologies Inc |
Bonded structure with active interposer
|
|
CN118235239A
(zh)
|
2021-10-18 |
2024-06-21 |
美商艾德亚半导体科技有限责任公司 |
结合结构中的降低的寄生电容
|
|
JP2024536563A
(ja)
|
2021-10-19 |
2024-10-04 |
アデイア セミコンダクター ボンディング テクノロジーズ インコーポレイテッド |
マルチダイスタッキングにおける積層インダクタ
|
|
EP4420197A4
(en)
|
2021-10-22 |
2025-09-10 |
Adeia Semiconductor Tech Llc |
RADIO FREQUENCY DEVICE HOUSINGS
|
|
JP2024541923A
(ja)
|
2021-10-25 |
2024-11-13 |
アデイア セミコンダクター ボンディング テクノロジーズ インコーポレイテッド |
積層化電子デバイス用の電力分配
|
|
US20230125395A1
(en)
|
2021-10-27 |
2023-04-27 |
Adeia Semiconductor Bonding Technologies Inc. |
Stacked structures with capacitive coupling connections
|
|
US12563749B2
(en)
|
2021-10-28 |
2026-02-24 |
Adeia Semiconductor Bonding Technologies Inc |
Stacked electronic devices
|
|
WO2023076495A1
(en)
|
2021-10-28 |
2023-05-04 |
Adeia Semiconductor Bonding Technologies Inc. |
Diffusion barriers and method of forming same
|
|
US12604771B2
(en)
|
2021-10-28 |
2026-04-14 |
Adeia Semiconductor Bonding Technologies Inc. |
Direct bonding methods and structures
|
|
US20230207437A1
(en)
|
2021-11-05 |
2023-06-29 |
Adeia Semiconductor Bonding Technologies Inc. |
Multi-channel device stacking
|
|
WO2023091430A1
(en)
|
2021-11-17 |
2023-05-25 |
Adeia Semiconductor Bonding Technologies Inc. |
Thermal bypass for stacked dies
|
|
US20230154828A1
(en)
|
2021-11-18 |
2023-05-18 |
Adeia Semiconductor Bonding Technologies Inc. |
Fluid cooling for die stacks
|
|
EP4449491A4
(en)
|
2021-12-13 |
2026-03-18 |
Adeia Semiconductor Bonding Technologies Inc |
INTERCONNECTION STRUCTURES
|
|
US12557615B2
(en)
|
2021-12-13 |
2026-02-17 |
Adeia Semiconductor Technologies Llc |
Methods for bonding semiconductor elements
|
|
US20230197453A1
(en)
|
2021-12-17 |
2023-06-22 |
Adeia Semiconductor Bonding Technologies Inc. |
Structure with conductive feature for direct bonding and method of forming same
|
|
KR20240128904A
(ko)
|
2021-12-20 |
2024-08-27 |
아데이아 세미컨덕터 본딩 테크놀로지스 인코포레이티드 |
다이 패키지를 위한 열전 냉각
|
|
EP4454005A1
(en)
|
2021-12-20 |
2024-10-30 |
Adeia Semiconductor Bonding Technologies Inc. |
Direct bonding and debonding of elements
|
|
EP4454440A4
(en)
|
2021-12-20 |
2025-11-26 |
Adeia Semiconductor Bonding Technologies Inc |
THERMOELECTRIC COOLING IN MICROELECTRONICS
|
|
EP4454006A4
(en)
|
2021-12-22 |
2025-12-17 |
Adeia Semiconductor Bonding Technologies Inc |
LOW-STRENGTH DIRECT HYBRID CONNECTION
|
|
KR20240128928A
(ko)
|
2021-12-23 |
2024-08-27 |
아데이아 세미컨덕터 본딩 테크놀로지스 인코포레이티드 |
다이 접합 제어를 위한 장치 및 방법
|
|
KR20240119164A
(ko)
|
2021-12-23 |
2024-08-06 |
아데이아 세미컨덕터 본딩 테크놀로지스 인코포레이티드 |
패키지 기판 상의 직접 결합
|
|
WO2023122771A1
(en)
|
2021-12-23 |
2023-06-29 |
Adeia Semiconductor Bonding Technologies Inc. |
Bonded structures with interconnect assemblies
|
|
CN118679563A
(zh)
|
2021-12-27 |
2024-09-20 |
美商艾德亚半导体接合科技有限公司 |
直接结合的框架晶片
|
|
KR20240144961A
(ko)
|
2022-01-31 |
2024-10-04 |
아데이아 세미컨덕터 본딩 테크놀로지스 인코포레이티드 |
전자 디바이스용 열소산 시스템
|
|
EP4483406A4
(en)
|
2022-02-24 |
2026-03-04 |
Adeia Semiconductor Bonding Technologies Inc |
BOUND STRUCTURES
|
|
KR20240162515A
(ko)
|
2022-03-16 |
2024-11-15 |
아데이아 세미컨덕터 본딩 테크놀로지스 인코포레이티드 |
접합의 팽창 제어
|
|
US12512425B2
(en)
|
2022-04-25 |
2025-12-30 |
Adeia Semiconductor Bonding Technologies Inc. |
Expansion controlled structure for direct bonding and method of forming same
|
|
WO2023215598A1
(en)
|
2022-05-05 |
2023-11-09 |
Adeia Semiconductor Bonding Technologies Inc. |
Low temperature direct bonding
|
|
US20230360950A1
(en)
|
2022-05-05 |
2023-11-09 |
Adeia Semiconductor Bonding Technologies Inc. |
Gang-flipping of dies prior to bonding
|
|
US20230369136A1
(en)
|
2022-05-13 |
2023-11-16 |
Adeia Semiconductor Bonding Technologies Inc. |
Bonding surface validation on dicing tape
|
|
JP2025517291A
(ja)
|
2022-05-23 |
2025-06-05 |
アデイア セミコンダクター ボンディング テクノロジーズ インコーポレイテッド |
ボンデッド構造体のための試験用素子
|