JP2020036038A - 非発光性側壁再結合を低減させるled構造 - Google Patents
非発光性側壁再結合を低減させるled構造 Download PDFInfo
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
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- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/14—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a carrier transport control structure, e.g. highly-doped semiconductor layer or current-blocking structure
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- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
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- H—ELECTRICITY
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/04—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction
- H01L33/06—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction within the light emitting region, e.g. quantum confinement structure or tunnel barrier
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- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/0004—Devices characterised by their operation
- H01L33/0008—Devices characterised by their operation having p-n or hi-lo junctions
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/005—Processes
- H01L33/0062—Processes for devices with an active region comprising only III-V compounds
- H01L33/0075—Processes for devices with an active region comprising only III-V compounds comprising nitride compounds
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/20—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular shape, e.g. curved or truncated substrate
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- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/20—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular shape, e.g. curved or truncated substrate
- H01L33/24—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular shape, e.g. curved or truncated substrate of the light emitting region, e.g. non-planar junction
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- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/26—Materials of the light emitting region
- H01L33/30—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table
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- H01L33/44—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the coatings, e.g. passivation layer or anti-reflective coating
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- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/52—Encapsulations
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- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Led Devices (AREA)
- Led Device Packages (AREA)
Abstract
Description
本出願は、2015年1月6日に出願された米国特許仮出願第62/100,348号の優先権の利益を主張し、同文献の開示全体は本明細書において参照により援用されている。
Claims (17)
- pnダイオード層であって、
上部電流拡散と、
下部電流拡散層と、
前記上部電流拡散層と前記下部電流拡散層との間の活性層と、
前記上部電流拡散層、前記活性層、及び前記下部電流拡散層にわたるpnダイオード層側壁と、
を含むpnダイオード層を備える、発光ダイオード(LED)。 - 前記活性層の横端が、前記pnダイオード層側璧内に、内側に閉じ込められている、請求項1に記載の発光ダイオード。
- 前記pnダイオード層側壁を取り囲む、その場エピタキシャル再成長不活性化層を更に備える、請求項1に記載の発光ダイオード。
- 前記pnダイオード層側壁を取り囲み、かつ前記下部電流拡散層の下に存在する、別の場所でのエピタキシャル再成長不活性化層を更に備える、請求項1に記載の発光ダイオード。
- 前記pnダイオード層側壁内に拡散不活性化層を更に備える、請求項1に記載の発光ダイオード。
- 前記下部電流拡散層によって横方向に取り囲まれた、拡散p型ドープ領域を更に備える、請求項1に記載の発光ダイオード。
- 前記LEDの内側に横pn接合を更に備える、請求項1に記載の発光ダイオード。
- 前記活性層はリンベースであり、前記pnダイオード層側壁を横方向に取り囲むAlInP不活性化層を更に備える、請求項1に記載の発光ダイオード。
- 前記活性層は窒化物ベースであり、前記pnダイオード層側壁を横方向に取り囲むGaN不活性化層を更に備える、請求項1の発光ダイオード。
- 前記活性層は(100)領域と、前記(100)領域からの向きの一致しない傾斜領域とを含む、請求項1に記載の発光ダイオード。
- 前記傾斜領域上に活性pn接合が形成される、請求項10に記載の発光ダイオード。
- 前記活性層の前記横端は切り込みによって前記LEDの前記内側に配置され、次に周囲の層のマストランスポートが行われる、請求項2に記載の発光ダイオード。
- 前記活性層の前記横端は、前記LEDの前記内側に、表面変換によって配置される、請求項2に記載の発光ダイオード
- 前記活性層は分離された量子ドットの塊を含む、請求項1に記載の発光ダイオード。
- 前記活性層は埋め込まれたナノピラーを含む、請求項1に記載の発光ダイオード。
- 前記活性層を取り囲む、相互混合された不活性化領域を更に備える、請求項2に記載の発光ダイオード。
- 前記pnダイオード層側壁を取り囲むAl2O3側壁不活性化層を更に備える、請求項1に記載の発光ダイオード。
Applications Claiming Priority (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US201562100348P | 2015-01-06 | 2015-01-06 | |
US62/100,348 | 2015-01-06 | ||
US14/853,614 | 2015-09-14 | ||
US14/853,614 US9484492B2 (en) | 2015-01-06 | 2015-09-14 | LED structures for reduced non-radiative sidewall recombination |
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JP2017553307A Division JP2018505567A (ja) | 2015-01-06 | 2015-12-07 | 非発光性側壁再結合を低減させるled構造 |
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JP2020036038A true JP2020036038A (ja) | 2020-03-05 |
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JP2017553307A Pending JP2018505567A (ja) | 2015-01-06 | 2015-12-07 | 非発光性側壁再結合を低減させるled構造 |
JP2019202959A Pending JP2020036038A (ja) | 2015-01-06 | 2019-11-08 | 非発光性側壁再結合を低減させるled構造 |
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Country Status (6)
Country | Link |
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US (1) | US9484492B2 (ja) |
EP (1) | EP3243223B1 (ja) |
JP (2) | JP2018505567A (ja) |
KR (3) | KR20170100611A (ja) |
CN (1) | CN107408603B (ja) |
WO (1) | WO2016111789A1 (ja) |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
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JP2022529861A (ja) * | 2020-03-24 | 2022-06-27 | 中国科学院蘇州納米技術与納米▲ファン▼生研究所 | 超可撓性透明半導体薄膜及びその製造方法 |
JP7272412B1 (ja) | 2021-12-03 | 2023-05-12 | 信越半導体株式会社 | 接合型半導体ウェーハの製造方法 |
US11923402B2 (en) | 2020-12-14 | 2024-03-05 | Lumileds Llc | Light emitting diode device |
Families Citing this family (79)
Publication number | Priority date | Publication date | Assignee | Title |
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US9865772B2 (en) | 2015-01-06 | 2018-01-09 | Apple Inc. | LED structures for reduced non-radiative sidewall recombination |
US10297581B2 (en) | 2015-07-07 | 2019-05-21 | Apple Inc. | Quantum dot integration schemes |
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US20160197232A1 (en) | 2016-07-07 |
EP3243223B1 (en) | 2022-06-08 |
WO2016111789A1 (en) | 2016-07-14 |
EP3243223A1 (en) | 2017-11-15 |
KR20170100611A (ko) | 2017-09-04 |
US9484492B2 (en) | 2016-11-01 |
KR102380538B1 (ko) | 2022-03-29 |
CN107408603A (zh) | 2017-11-28 |
KR20190109586A (ko) | 2019-09-25 |
JP2018505567A (ja) | 2018-02-22 |
KR20210076197A (ko) | 2021-06-23 |
CN107408603B (zh) | 2020-04-14 |
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