JP5356292B2 - 半導体発光素子及び半導体発光装置 - Google Patents
半導体発光素子及び半導体発光装置 Download PDFInfo
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- H01L33/24—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular shape, e.g. curved or truncated substrate of the light emitting region, e.g. non-planar junction
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- H01L33/38—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes with a particular shape
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- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
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- H01L2224/42—Wire connectors; Manufacturing methods related thereto
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- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
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- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
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Description
[半導体発光素子の構成]
本発明の一実施形態における半導体発光素子の構成について、図1を用いて説明する。半導体発光素子100は、発光層を含む半導体層10と、半導体層10に接着金属層11,12を介して貼り合わされた基板13と、半導体層10及び接着金属層11で覆われた接合金属14等を備える。なお、この半導体発光素子100において、後述する発光層22で発光した光は、基板13とは反対側の、図1において上側から取り出される。
半導体層10は、下層より順に第2コンタクト層20、第2電流拡散層21、発光層22、第1電流拡散層23、第1コンタクト層24を積層して構成されている。ここでは、発光層22に、クラッド層、超格子層等を含む構造としてもよい。なお、電流拡散層21,23をコンタクト層20,24または発光層22のクラッド層に含まれる構造としてもよい。この半導体層10には、所定の間隔を隔てて形成されるように例えばエッチング加工を行う。形成された所定の間隔が、ダイシングストリートとなる。
基板13は、主面電極15と裏面電極17の間の導通を確保するため導電性を有する。例えば、基板13として、シリコン基板を用いる。なお、基板13の材料として、Ge、InP、GaP、GaAs、GaN、SiCを用いてもよい。また、基板13主面に接着金属層12が形成されており、裏面(主面に対向する面)には裏面電極17が形成されている。
接合金属層14として、例えば金属Ag層を用いる。金属Ag層は光の反射率が高く、発光層22で発光した光を上方に反射させる反射膜の役割も兼ねる。
次に、本実施形態の半導体発光素子の製造方法のうち、チップ形状の半導体発光素子に分離する前までの製造方法について、図2及び図3の工程図を用いて説明する。なお、図2及び図3では、半導体層10a,10b,10c,10d,10eの構造を省略して示した。
次に、前述した半導体発光素子を搭載した半導体発光装置について図4を用いて説明する。以下、「砲弾型」などと呼ばれる樹脂封止型の半導体発光装置を例として説明する。
103の底面に導電性ペーストなどによりマウントされている。これにより、半導体発光素子100の裏面電極17とリード101が接続される。
以上より、本実施形態では、接合金属層の腐食を抑制可能な半導体発光素子及び半導体発光装置を提供できる。以下、具体的に説明する。
本実施形態の変形例1として、図5に示すように、接合金属層14が主面電極15の直下を避けるように形成された形態が可能である。なお、形成される接合金属層14の個数や形状は問わない。
本実施形態の半導体発光素子では、発光層により生成され接合金属層14側に向かう光を接合金属層14表面での反射により上面から取り出す。本変形例1のように、主面電極15の直下に接合金属層14を設けないことで、電流分布と発光分布を主面電極15の直下を避けた場所に誘導できる。その結果、主面電極15によって遮蔽されない発光の量を増大し、主面電極15と接合金属14間を行き来し、半導体層10から外部に取り出されない光量を軽減できる。その結果、半導体発光素子の発光効率を向上できる。
本実施形態では、接着金属層12を基板13上全面に形成したが、本変形例2では、図6に示すように、接着金属層12に素子分離領域30を形成してもよい。
このため、例えばレーザーダイシング法の場合には、レーザーを照射する部分が基板13のみである。その結果、本実施形態の場合と比べて、より半導体層10及び接着金属層11などに損傷や膜はがれが生じにくくなる。
11 12…接着金属層
13…基板
14…接合金属層
15…主面電極
16…保護膜
20…基板
31…フォトレジスト
30…素子分離領域
Claims (6)
- 発光層を含む半導体層と、
前記半導体層の一面上に配設された第1電極と、
前記半導体層の前記一面と対向する他面側に配設された接合金属層と、
前記接合金属層を覆設し、前記半導体層の前記他面側に前記半導体層の前記他面からはみ出して配設された第1接着金属層と、
第2電極が配設され、前記第1接着金属層のうち前記半導体層側の一面に対向する他面側に配設された基板と、
を備え、
前記半導体層の幅は前記第1電極から前記第1接着金属層に向かって広くなることを特徴とする半導体発光素子。 - 前記第1接着金属層は、エッチングにより前記半導体層の幅を前記第1電極から前記第2電極に向かって広くする際のエッチングストッパであることを特徴とする請求項1記載の半導体発光素子。
- 前記第1接着金属層のうち前記半導体層の前記他面側にNi層を配設し、
前記半導体層の前記他面は前記Ni層に接着されており、
前記半導体層の前記他面側における前記接合金属層の表面の面積が、前記基板の前記半導体層に対向する表面の面積より小さいことを特徴とする請求項1又は請求項2記載の半導体発光素子。 - 前記接合金属層は、前記第1電極と正対する位置を除いて前記他面側に形成されることを特徴とする請求項1乃至請求項3いずれか1項に記載の半導体発光素子。
- 前記第1接着金属層は、前記基板側から順にAu層,Pt層,Ti層,Ni層を積層した多層であることを特徴とする請求項1乃至請求項4いずれか1項に記載の半導体発光素子。
- 請求項1乃至請求項5のいずれか1項に記載の半導体発光素子と、
前記第1電極と接続された第1導電部と、
前記第2電極と接続された第2導電部と、
前記半導体発光素子を覆設する蛍光体部と
を備えることを特徴とする半導体発光装置。
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JP2010065232A JP5356292B2 (ja) | 2010-03-19 | 2010-03-19 | 半導体発光素子及び半導体発光装置 |
US12/880,050 US8890201B2 (en) | 2010-03-19 | 2010-09-10 | Semiconductor light emitting device |
US14/475,555 US20150048410A1 (en) | 2010-03-19 | 2014-09-02 | Semiconductor light emitting device |
US14/987,298 US20160118541A1 (en) | 2010-03-19 | 2016-01-04 | Semiconductor light emitting device |
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JP2012174902A (ja) * | 2011-02-22 | 2012-09-10 | Stanley Electric Co Ltd | 窒化物半導体発光素子の製造方法 |
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JP2016054260A (ja) * | 2014-09-04 | 2016-04-14 | 株式会社東芝 | 半導体発光素子 |
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JP2007103725A (ja) * | 2005-10-05 | 2007-04-19 | Toshiba Corp | 半導体発光装置 |
JP5032017B2 (ja) * | 2005-10-28 | 2012-09-26 | 株式会社東芝 | 半導体発光素子及びその製造方法並びに半導体発光装置 |
JP2008186959A (ja) * | 2007-01-29 | 2008-08-14 | Toyoda Gosei Co Ltd | Iii−v族半導体素子、およびその製造方法 |
JP2008258459A (ja) * | 2007-04-06 | 2008-10-23 | Toshiba Corp | 発光装置及びその製造方法 |
US8237183B2 (en) * | 2007-08-16 | 2012-08-07 | Kabushiki Kaisha Toshiba | Semiconductor light emitting device and method for manufacturing same |
JP5167831B2 (ja) * | 2008-01-24 | 2013-03-21 | 豊田合成株式会社 | Iii族窒化物半導体素子、およびその製造方法 |
JP5334158B2 (ja) * | 2008-07-15 | 2013-11-06 | シャープ株式会社 | 窒化物半導体発光素子および窒化物半導体発光素子の製造方法 |
-
2010
- 2010-03-19 JP JP2010065232A patent/JP5356292B2/ja active Active
- 2010-09-10 US US12/880,050 patent/US8890201B2/en active Active
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2014
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US20150048410A1 (en) | 2015-02-19 |
US20110227121A1 (en) | 2011-09-22 |
JP2011199074A (ja) | 2011-10-06 |
US20160118541A1 (en) | 2016-04-28 |
US8890201B2 (en) | 2014-11-18 |
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