JP2017533589A5 - - Google Patents
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- JP2017533589A5 JP2017533589A5 JP2017522023A JP2017522023A JP2017533589A5 JP 2017533589 A5 JP2017533589 A5 JP 2017533589A5 JP 2017522023 A JP2017522023 A JP 2017522023A JP 2017522023 A JP2017522023 A JP 2017522023A JP 2017533589 A5 JP2017533589 A5 JP 2017533589A5
- Authority
- JP
- Japan
- Prior art keywords
- silicon nitride
- silicon
- films
- nitride film
- high quality
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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- 229910052581 Si3N4 Inorganic materials 0.000 description 20
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 19
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 9
- 238000000151 deposition Methods 0.000 description 6
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 4
- 230000008021 deposition Effects 0.000 description 3
- 238000000034 method Methods 0.000 description 3
- QPJSUIGXIBEQAC-UHFFFAOYSA-N n-(2,4-dichloro-5-propan-2-yloxyphenyl)acetamide Chemical compound CC(C)OC1=CC(NC(C)=O)=C(Cl)C=C1Cl QPJSUIGXIBEQAC-UHFFFAOYSA-N 0.000 description 3
- 239000000126 substance Substances 0.000 description 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 238000000231 atomic layer deposition Methods 0.000 description 2
- 150000001875 compounds Chemical class 0.000 description 2
- 239000000203 mixture Substances 0.000 description 2
- 229910052757 nitrogen Inorganic materials 0.000 description 2
- 239000002243 precursor Substances 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- HMDDXIMCDZRSNE-UHFFFAOYSA-N [C].[Si] Chemical compound [C].[Si] HMDDXIMCDZRSNE-UHFFFAOYSA-N 0.000 description 1
- YSCFTYILLCWAFW-UHFFFAOYSA-N [SiH3]N([SiH3])[SiH2]N([SiH3])[SiH3] Chemical compound [SiH3]N([SiH3])[SiH2]N([SiH3])[SiH3] YSCFTYILLCWAFW-UHFFFAOYSA-N 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 239000011261 inert gas Substances 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 238000000059 patterning Methods 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- SBEQWOXEGHQIMW-UHFFFAOYSA-N silicon Chemical compound [Si].[Si] SBEQWOXEGHQIMW-UHFFFAOYSA-N 0.000 description 1
- 239000012686 silicon precursor Substances 0.000 description 1
- 125000006850 spacer group Chemical group 0.000 description 1
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US201462068248P | 2014-10-24 | 2014-10-24 | |
| US62/068,248 | 2014-10-24 | ||
| PCT/US2015/057045 WO2016065221A1 (en) | 2014-10-24 | 2015-10-23 | Compositions and methods using same for deposition of silicon-containing films |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2017533589A JP2017533589A (ja) | 2017-11-09 |
| JP2017533589A5 true JP2017533589A5 (OSRAM) | 2021-02-18 |
| JP6871161B2 JP6871161B2 (ja) | 2021-05-12 |
Family
ID=54477308
Family Applications (4)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2017522023A Active JP6871161B2 (ja) | 2014-10-24 | 2015-10-23 | ケイ素含有膜の堆積のための組成物及びそれを使用した方法 |
| JP2017522032A Withdrawn JP2017535077A (ja) | 2014-10-24 | 2015-10-23 | ケイ素含有膜の堆積のための組成物及びそれを使用した方法 |
| JP2019164049A Active JP6949912B2 (ja) | 2014-10-24 | 2019-09-09 | ケイ素含有膜の堆積のための組成物及びそれを使用した方法 |
| JP2021152399A Active JP7152576B2 (ja) | 2014-10-24 | 2021-09-17 | ケイ素含有膜の堆積のための組成物及びそれを使用した方法 |
Family Applications After (3)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2017522032A Withdrawn JP2017535077A (ja) | 2014-10-24 | 2015-10-23 | ケイ素含有膜の堆積のための組成物及びそれを使用した方法 |
| JP2019164049A Active JP6949912B2 (ja) | 2014-10-24 | 2019-09-09 | ケイ素含有膜の堆積のための組成物及びそれを使用した方法 |
| JP2021152399A Active JP7152576B2 (ja) | 2014-10-24 | 2021-09-17 | ケイ素含有膜の堆積のための組成物及びそれを使用した方法 |
Country Status (8)
| Country | Link |
|---|---|
| US (5) | US10106890B2 (OSRAM) |
| EP (3) | EP3431629B1 (OSRAM) |
| JP (4) | JP6871161B2 (OSRAM) |
| KR (3) | KR102079501B1 (OSRAM) |
| CN (4) | CN107257867B (OSRAM) |
| SG (3) | SG10202000545RA (OSRAM) |
| TW (3) | TWI579399B (OSRAM) |
| WO (2) | WO2016065219A1 (OSRAM) |
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