JP2017501591A5 - - Google Patents

Download PDF

Info

Publication number
JP2017501591A5
JP2017501591A5 JP2016559150A JP2016559150A JP2017501591A5 JP 2017501591 A5 JP2017501591 A5 JP 2017501591A5 JP 2016559150 A JP2016559150 A JP 2016559150A JP 2016559150 A JP2016559150 A JP 2016559150A JP 2017501591 A5 JP2017501591 A5 JP 2017501591A5
Authority
JP
Japan
Prior art keywords
layer
dielectric constant
low dielectric
copper
constant material
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP2016559150A
Other languages
English (en)
Japanese (ja)
Other versions
JP2017501591A (ja
JP6620112B2 (ja
Filing date
Publication date
Priority claimed from US14/523,523 external-priority patent/US9312168B2/en
Application filed filed Critical
Publication of JP2017501591A publication Critical patent/JP2017501591A/ja
Publication of JP2017501591A5 publication Critical patent/JP2017501591A5/ja
Application granted granted Critical
Publication of JP6620112B2 publication Critical patent/JP6620112B2/ja
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

JP2016559150A 2013-12-16 2014-12-03 処理システムを使用した空隙構造の組込 Active JP6620112B2 (ja)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
US201361916726P 2013-12-16 2013-12-16
US61/916,726 2013-12-16
US14/523,523 2014-10-24
US14/523,523 US9312168B2 (en) 2013-12-16 2014-10-24 Air gap structure integration using a processing system
PCT/US2014/068344 WO2015094667A1 (en) 2013-12-16 2014-12-03 Air gap structure integration using a processing system

Publications (3)

Publication Number Publication Date
JP2017501591A JP2017501591A (ja) 2017-01-12
JP2017501591A5 true JP2017501591A5 (cg-RX-API-DMAC7.html) 2018-01-18
JP6620112B2 JP6620112B2 (ja) 2019-12-11

Family

ID=53369385

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2016559150A Active JP6620112B2 (ja) 2013-12-16 2014-12-03 処理システムを使用した空隙構造の組込

Country Status (6)

Country Link
US (1) US9312168B2 (cg-RX-API-DMAC7.html)
JP (1) JP6620112B2 (cg-RX-API-DMAC7.html)
KR (1) KR102308047B1 (cg-RX-API-DMAC7.html)
CN (1) CN105814678B (cg-RX-API-DMAC7.html)
TW (1) TWI626688B (cg-RX-API-DMAC7.html)
WO (1) WO2015094667A1 (cg-RX-API-DMAC7.html)

Families Citing this family (66)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9132436B2 (en) 2012-09-21 2015-09-15 Applied Materials, Inc. Chemical control features in wafer process equipment
US10256079B2 (en) 2013-02-08 2019-04-09 Applied Materials, Inc. Semiconductor processing systems having multiple plasma configurations
US11637002B2 (en) 2014-11-26 2023-04-25 Applied Materials, Inc. Methods and systems to enhance process uniformity
US20160225652A1 (en) 2015-02-03 2016-08-04 Applied Materials, Inc. Low temperature chuck for plasma processing systems
US9741593B2 (en) 2015-08-06 2017-08-22 Applied Materials, Inc. Thermal management systems and methods for wafer processing systems
US10504700B2 (en) 2015-08-27 2019-12-10 Applied Materials, Inc. Plasma etching systems and methods with secondary plasma injection
EP3353803A4 (en) * 2015-09-23 2019-04-24 Intel Corporation ULTRADÜNNE DIELECTRIC HELMET LAYER FOR MASKLESS AIR SPLICE AND REPLACEMENT ILD PROCESSES
US9449871B1 (en) 2015-11-18 2016-09-20 International Business Machines Corporation Hybrid airgap structure with oxide liner
US9349687B1 (en) 2015-12-19 2016-05-24 International Business Machines Corporation Advanced manganese/manganese nitride cap/etch mask for air gap formation scheme in nanocopper low-K interconnect
US9887128B2 (en) 2015-12-29 2018-02-06 Taiwan Semiconductor Manufacturing Co., Ltd. Method and structure for interconnection
JP6329199B2 (ja) * 2016-03-30 2018-05-23 株式会社日立国際電気 半導体装置の製造方法、基板処理装置およびプログラム
US9553019B1 (en) 2016-04-15 2017-01-24 International Business Machines Corporation Airgap protection layer for via alignment
US10504754B2 (en) 2016-05-19 2019-12-10 Applied Materials, Inc. Systems and methods for improved semiconductor etching and component protection
TWI680535B (zh) 2016-06-14 2019-12-21 美商應用材料股份有限公司 金屬及含金屬化合物之氧化體積膨脹
US9865484B1 (en) 2016-06-29 2018-01-09 Applied Materials, Inc. Selective etch using material modification and RF pulsing
US9892961B1 (en) 2016-08-09 2018-02-13 International Business Machines Corporation Air gap spacer formation for nano-scale semiconductor devices
US10546729B2 (en) 2016-10-04 2020-01-28 Applied Materials, Inc. Dual-channel showerhead with improved profile
TWI719262B (zh) 2016-11-03 2021-02-21 美商應用材料股份有限公司 用於圖案化之薄膜的沉積與處理
KR20190067939A (ko) 2016-11-08 2019-06-17 어플라이드 머티어리얼스, 인코포레이티드 패터닝 응용들을 위한 상향식 필러들의 기하형상 제어
US10431429B2 (en) 2017-02-03 2019-10-01 Applied Materials, Inc. Systems and methods for radial and azimuthal control of plasma uniformity
TW201839897A (zh) 2017-02-22 2018-11-01 美商應用材料股份有限公司 自對準接觸圖案化之臨界尺寸控制
US10943834B2 (en) 2017-03-13 2021-03-09 Applied Materials, Inc. Replacement contact process
US10636659B2 (en) 2017-04-25 2020-04-28 Applied Materials, Inc. Selective deposition for simplified process flow of pillar formation
US11276559B2 (en) 2017-05-17 2022-03-15 Applied Materials, Inc. Semiconductor processing chamber for multiple precursor flow
JP7176860B6 (ja) 2017-05-17 2022-12-16 アプライド マテリアルズ インコーポレイテッド 前駆体の流れを改善する半導体処理チャンバ
US11276590B2 (en) 2017-05-17 2022-03-15 Applied Materials, Inc. Multi-zone semiconductor substrate supports
US10840186B2 (en) 2017-06-10 2020-11-17 Applied Materials, Inc. Methods of forming self-aligned vias and air gaps
WO2018227110A1 (en) * 2017-06-10 2018-12-13 Applied Materials, Inc. Methods of forming self-aligned vias and air gaps
TWI719316B (zh) * 2017-06-12 2021-02-21 美商應用材料股份有限公司 利用鎢氧化還原之無縫鎢填充
TW201906035A (zh) 2017-06-24 2019-02-01 美商微材料有限責任公司 生產完全自我對準的介層窗及觸點之方法
US10297458B2 (en) 2017-08-07 2019-05-21 Applied Materials, Inc. Process window widening using coated parts in plasma etch processes
JP7225211B2 (ja) * 2017-08-18 2023-02-20 ティーイーエル マニュファクチュアリング アンド エンジニアリング オブ アメリカ，インコーポレイテッド 低温流体を噴霧するための装置
US10573555B2 (en) 2017-08-31 2020-02-25 Micromaterials Llc Methods of producing self-aligned grown via
WO2019046399A1 (en) 2017-08-31 2019-03-07 Micromaterials Llc METHODS FOR PRODUCING SELF-ALIGNED INTERCONNECTION HOLES
US10600688B2 (en) 2017-09-06 2020-03-24 Micromaterials Llc Methods of producing self-aligned vias
JP2019106538A (ja) 2017-12-07 2019-06-27 マイクロマテリアルズ エルエルシー 制御可能な金属およびバリアライナー凹部のための方法
EP3499557A1 (en) 2017-12-15 2019-06-19 Micromaterials LLC Selectively etched self-aligned via processes
US10903054B2 (en) 2017-12-19 2021-01-26 Applied Materials, Inc. Multi-zone gas distribution systems and methods
US11328909B2 (en) 2017-12-22 2022-05-10 Applied Materials, Inc. Chamber conditioning and removal processes
US20190206718A1 (en) 2018-01-02 2019-07-04 Globalfoundries Inc. Back-end-of-line structures with air gaps
US10854426B2 (en) 2018-01-08 2020-12-01 Applied Materials, Inc. Metal recess for semiconductor structures
US10964512B2 (en) 2018-02-15 2021-03-30 Applied Materials, Inc. Semiconductor processing chamber multistage mixing apparatus and methods
KR20190104902A (ko) 2018-03-02 2019-09-11 마이크로머티어리얼즈 엘엘씨 금속 산화물들을 제거하기 위한 방법들
US10319600B1 (en) 2018-03-12 2019-06-11 Applied Materials, Inc. Thermal silicon etch
US10886137B2 (en) 2018-04-30 2021-01-05 Applied Materials, Inc. Selective nitride removal
TW202002219A (zh) 2018-05-08 2020-01-01 美商微材料有限責任公司 用來產生高的深寬比的完全自對準的通孔的選擇性移除過程
TW202011547A (zh) 2018-05-16 2020-03-16 美商微材料有限責任公司 用於產生完全自對準的通孔的方法
US10699953B2 (en) 2018-06-08 2020-06-30 Micromaterials Llc Method for creating a fully self-aligned via
US11049755B2 (en) 2018-09-14 2021-06-29 Applied Materials, Inc. Semiconductor substrate supports with embedded RF shield
US10892198B2 (en) 2018-09-14 2021-01-12 Applied Materials, Inc. Systems and methods for improved performance in semiconductor processing
US11062887B2 (en) 2018-09-17 2021-07-13 Applied Materials, Inc. High temperature RF heater pedestals
US11417534B2 (en) 2018-09-21 2022-08-16 Applied Materials, Inc. Selective material removal
US11682560B2 (en) 2018-10-11 2023-06-20 Applied Materials, Inc. Systems and methods for hafnium-containing film removal
US11121002B2 (en) 2018-10-24 2021-09-14 Applied Materials, Inc. Systems and methods for etching metals and metal derivatives
US11437242B2 (en) 2018-11-27 2022-09-06 Applied Materials, Inc. Selective removal of silicon-containing materials
US11721527B2 (en) * 2019-01-07 2023-08-08 Applied Materials, Inc. Processing chamber mixing systems
US10920319B2 (en) 2019-01-11 2021-02-16 Applied Materials, Inc. Ceramic showerheads with conductive electrodes
US11004687B2 (en) 2019-02-11 2021-05-11 Applied Materials, Inc. Gate contact over active processes
US11164938B2 (en) 2019-03-26 2021-11-02 Micromaterials Llc DRAM capacitor module
US11643724B2 (en) * 2019-07-18 2023-05-09 Asm Ip Holding B.V. Method of forming structures using a neutral beam
TWI819233B (zh) * 2019-08-15 2023-10-21 美商應用材料股份有限公司 非共形膜的選擇性蝕刻臨界尺寸控制
KR102771903B1 (ko) 2019-08-16 2025-02-27 삼성전자주식회사 저유전체 물질 층을 포함하는 반도체 소자 형성 방법
US11482447B2 (en) * 2020-07-08 2022-10-25 Taiwan Semiconductor Manufacturing Company, Ltd. Method of forming an integrated chip having a cavity between metal features
CN111933688B (zh) * 2020-09-18 2021-02-09 晶芯成(北京)科技有限公司 一种半导体结构及其制备方法
TWI801058B (zh) * 2021-12-23 2023-05-01 明遠精密科技股份有限公司 一種複合式電漿源及其運作方法
CN115565933B (zh) * 2022-10-25 2026-03-31 长江存储科技有限责任公司 介电结构、制备方法、以及半导体器件

Family Cites Families (23)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6815329B2 (en) * 2000-02-08 2004-11-09 International Business Machines Corporation Multilayer interconnect structure containing air gaps and method for making
US6406975B1 (en) * 2000-11-27 2002-06-18 Chartered Semiconductor Manufacturing Inc. Method for fabricating an air gap shallow trench isolation (STI) structure
US6603204B2 (en) * 2001-02-28 2003-08-05 International Business Machines Corporation Low-k interconnect structure comprised of a multilayer of spin-on porous dielectrics
US6642151B2 (en) 2002-03-06 2003-11-04 Applied Materials, Inc Techniques for plasma etching silicon-germanium
JP2004103971A (ja) * 2002-09-12 2004-04-02 Hitachi High-Technologies Corp ダマシン処理方法、ダマシン処理装置および、ダマシン構造
JP4574145B2 (ja) * 2002-09-13 2010-11-04 ローム・アンド・ハース・エレクトロニック・マテリアルズ，エル．エル．シー． エアギャップ形成
US7088003B2 (en) * 2004-02-19 2006-08-08 International Business Machines Corporation Structures and methods for integration of ultralow-k dielectrics with improved reliability
US7247946B2 (en) * 2005-01-18 2007-07-24 International Business Machines Corporation On-chip Cu interconnection using 1 to 5 nm thick metal cap
KR100817088B1 (ko) 2007-02-16 2008-03-26 삼성전자주식회사 다마신 공정을 이용한 반도체 소자의 미세 금속 배선 패턴형성 방법
US7879683B2 (en) * 2007-10-09 2011-02-01 Applied Materials, Inc. Methods and apparatus of creating airgap in dielectric layers for the reduction of RC delay
US7666754B2 (en) * 2007-10-18 2010-02-23 Tokyo Electron Limited Method and system for forming an air gap structure
US20100051578A1 (en) * 2008-09-04 2010-03-04 Shuo-Che Chang Method for fabricating an integrated circuit
US8557712B1 (en) * 2008-12-15 2013-10-15 Novellus Systems, Inc. PECVD flowable dielectric gap fill
JP2010165864A (ja) * 2009-01-15 2010-07-29 Fujitsu Semiconductor Ltd 半導体装置の製造方法
JP2011165876A (ja) * 2010-02-09 2011-08-25 Consortium For Advanced Semiconductor Materials & Related Technologies 半導体装置、及びその製造方法
US8456009B2 (en) 2010-02-18 2013-06-04 Taiwan Semiconductor Manufacturing Company, Ltd. Semiconductor structure having an air-gap region and a method of manufacturing the same
US8288268B2 (en) * 2010-04-29 2012-10-16 International Business Machines Corporation Microelectronic structure including air gap
KR20120053799A (ko) * 2010-11-18 2012-05-29 삼성전자주식회사 반도체 장치 및 반도체 장치의 형성 방법
US20120213941A1 (en) * 2011-02-22 2012-08-23 Varian Semiconductor Equipment Associates, Inc. Ion-assisted plasma treatment of a three-dimensional structure
JP5898991B2 (ja) * 2012-02-10 2016-04-06 ルネサスエレクトロニクス株式会社 半導体装置および半導体装置の製造方法
KR20130092884A (ko) 2012-02-13 2013-08-21 에스케이하이닉스 주식회사 반도체 소자의 배선 구조체 및 제조 방법
US20130323930A1 (en) * 2012-05-29 2013-12-05 Kaushik Chattopadhyay Selective Capping of Metal Interconnect Lines during Air Gap Formation
KR102002815B1 (ko) * 2012-09-05 2019-07-23 삼성전자주식회사 반도체 장치 및 이의 제조 방법

Similar Documents

Publication Publication Date Title
JP2007311584A5 (cg-RX-API-DMAC7.html)
TW202035760A (zh) 在半導體元件圖案化中形成及使用應力調整矽氧化物膜的方法
US9006095B2 (en) Semiconductor devices and methods of manufacture thereof
JP2006344703A5 (cg-RX-API-DMAC7.html)
JP2016197719A5 (cg-RX-API-DMAC7.html)
JP2013530519A5 (cg-RX-API-DMAC7.html)
US9954051B2 (en) Structure and method of fabricating three-dimensional (3D) metal-insulator-metal (MIM) capacitor and resistor in semi-additive plating metal wiring
JP2008502140A5 (cg-RX-API-DMAC7.html)
JP2010225899A (ja) 半導体装置の製造方法
JP2006210685A5 (cg-RX-API-DMAC7.html)
US9698095B2 (en) Interconnect structure
CN111564411A (zh) 一种半导体装置及其形成方法
CN103871963A (zh) 一种低介电常数薄膜的成膜方法
JP2012164942A5 (cg-RX-API-DMAC7.html)
CN104465508B (zh) 空气隙的形成方法
CN101573787A (zh) 制造互连结构的方法
CN102738076B (zh) 通孔优先铜互连制作方法
CN104103574B (zh) 半导体器件的制作方法
JP2016213305A5 (ja) 半導体装置の製造方法
CN104681483B (zh) 一种半导体器件的制造方法
CN102420148A (zh) 一种基于聚酰亚胺基体的铝垫制备工艺
TWI321819B (en) Metal line damascene structure and fabricating method for the same
CN104733372B (zh) 一种半导体器件的制造方法
CN103606533A (zh) 一种通孔优先铜互连制作方法
CN101281882B (zh) 在基材上形成穿导孔的方法