JP2016502734A - 導電性コーティングを表面に堆積する方法 - Google Patents
導電性コーティングを表面に堆積する方法 Download PDFInfo
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- JP2016502734A JP2016502734A JP2015540005A JP2015540005A JP2016502734A JP 2016502734 A JP2016502734 A JP 2016502734A JP 2015540005 A JP2015540005 A JP 2015540005A JP 2015540005 A JP2015540005 A JP 2015540005A JP 2016502734 A JP2016502734 A JP 2016502734A
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- magnesium
- fullerene
- cathode
- organic
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- 239000001257 hydrogen Substances 0.000 description 1
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- VTHJTEIRLNZDEV-UHFFFAOYSA-L magnesium dihydroxide Chemical compound [OH-].[OH-].[Mg+2] VTHJTEIRLNZDEV-UHFFFAOYSA-L 0.000 description 1
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- CPLXHLVBOLITMK-UHFFFAOYSA-N magnesium oxide Inorganic materials [Mg]=O CPLXHLVBOLITMK-UHFFFAOYSA-N 0.000 description 1
- AXZKOIWUVFPNLO-UHFFFAOYSA-N magnesium;oxygen(2-) Chemical compound [O-2].[Mg+2] AXZKOIWUVFPNLO-UHFFFAOYSA-N 0.000 description 1
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- XOLBLPGZBRYERU-UHFFFAOYSA-N tin dioxide Chemical compound O=[Sn]=O XOLBLPGZBRYERU-UHFFFAOYSA-N 0.000 description 1
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Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0236—Special surface textures
- H01L31/02366—Special surface textures of the substrate or of a layer on the substrate, e.g. textured ITO/glass substrate or superstrate, textured polymer layer on glass substrate
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09D—COATING COMPOSITIONS, e.g. PAINTS, VARNISHES OR LACQUERS; FILLING PASTES; CHEMICAL PAINT OR INK REMOVERS; INKS; CORRECTING FLUIDS; WOODSTAINS; PASTES OR SOLIDS FOR COLOURING OR PRINTING; USE OF MATERIALS THEREFOR
- C09D5/00—Coating compositions, e.g. paints, varnishes or lacquers, characterised by their physical nature or the effects produced; Filling pastes
- C09D5/24—Electrically-conducting paints
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/02—Pretreatment of the material to be coated
- C23C14/024—Deposition of sublayers, e.g. to promote adhesion of the coating
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
- C23C14/14—Metallic material, boron or silicon
- C23C14/20—Metallic material, boron or silicon on organic substrates
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/24—Vacuum evaporation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K30/00—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation
- H10K30/80—Constructional details
- H10K30/81—Electrodes
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Abstract
Description
本願は、パリ条約に基づき、2012年11月6日出願の米国特許出願第61/723,127号の優先権を主張し、これらの全内容を参照により本明細書に組み込むものとする。
Claims (32)
- 導電性コーティングを表面に堆積する方法であって、
フラーレンを前記表面に堆積することにより前記表面を処理して処理表面を形成するステップと、
マグネシウムを含む前記導電性コーティングを前記処理表面に堆積するステップと
を含む方法。 - 請求項1記載の方法において、少なくとも約0.1単層のフラーレンを前記表面に堆積して前記表面を処理する方法。
- 請求項2記載の方法において、少なくとも約1単層のフラーレンを前記表面に堆積して前記表面を処理する方法。
- 請求項1乃至3のいずれかに記載の方法において、前記表面は有機表面である方法。
- 請求項1乃至3のいずれかに記載の方法において、前記表面は半導体表面又はガラス表面である方法。
- 請求項1乃至5のいずれかに記載の方法において、前記フラーレン及び前記導電性コーティングの少なくとも一方を、蒸着法を用いて堆積する方法。
- 請求項1乃至6のいずれかに記載の方法において、前記導電性コーティングはさらに、前記マグネシウムに分散されたフラーレンを含む方法。
- 請求項7記載の方法において、前記フラーレン及び前記導電性コーティングを、フラーレン及びマグネシウムを含む共通の原料物質を蒸着させることにより堆積する方法。
- 請求項1乃至8のいずれかに記載の方法において、前記表面の一部のみをフラーレンで処理する方法。
- 請求項1乃至9のいずれかに記載の方法において、シャドウマスク法又はマイクロコンタクト転写プリント法を用いて前記フラーレンを堆積して前記表面を処理する方法。
- 請求項1乃至10のいずれかに記載の方法において、前記フラーレンは、C60、C70、C76、C84、単層カーボンナノチューブ及び多層カーボンナノチューブのうち少なくとも1つを含む方法。
- 請求項1乃至11のいずれかに記載の方法において、当該方法はさらに、
マグネシウムを含むゲッターを前記導電性コーティングに堆積するステップ
を含む方法。 - 請求項1乃至12のいずれかに記載の方法において、前記導電性コーティングを、毎秒約1nm以上の速度で堆積する方法。
- 請求項1乃至13のいずれかに記載の方法において、前記導電性コーティングを、毎秒約14nm以上の速度で堆積する方法。
- 製造物であって、
マグネシウムを含む導電性コーティングで被覆された表面を有する基板と、
前記導電性コーティング及び前記表面の間の界面に配されたフラーレンと
を有する製造物。 - 請求項15に記載の製造物において、前記表面は有機表面である製造物。
- 請求項15に記載の製造物において、前記表面は半導体表面又はガラス表面である製造物。
- 請求項15乃至17のいずれかに記載の製造物において、前記導電性コーティングは、マグネシウム合金を含む製造物。
- 請求項15乃至18のいずれかに記載の製造物において、前記導電性コーティングはさらに、フラーレンを含む製造物。
- 請求項19に記載の製造物において、前記導電性コーティングは、重量で約10%以下のフラーレンを含む製造物。
- 請求項15乃至17のいずれかに記載の製造物において、前記導電性コーティングは、略純粋なマグネシウムを含む製造物。
- 請求項15乃至21のいずれかに記載の製造物において、前記フラーレンは、C60、C70、C76、C84、単層カーボンナノチューブ及び多層カーボンナノチューブのうち少なくとも1つを含む製造物。
- 有機オプトエレクトロニックデバイスであって、
アノードと、マグネシウムを含むカソードと、
前記アノード及び前記カソードの間に設けられた有機半導体層と、
前記有機半導体層及び前記カソードの間に設けられたフラーレンと
を有する有機オプトエレクトロニックデバイス。 - 請求項23記載の有機オプトエレクトロニックデバイスにおいて、当該オプトエレクトロニックデバイスは、有機太陽電池である有機オプトエレクトロニックデバイス。
- 請求項23記載の有機オプトエレクトロニックデバイスにおいて、当該オプトエレクトロニックデバイスは、有機太陽電池である有機オプトエレクトロニックデバイス。
- 請求項23乃至25のいずれかに記載の有機オプトエレクトロニックデバイスにおいて、前記有機半導体層は、エレクトロルミネセント層から成る有機オプトエレクトロニックデバイス。
- マグネシウムのシャドウマスクへの堆積を低減する方法であって、
前記シャドウマスクの表面の少なくとも一部を有機コーティングで被覆するステップ
を含む方法。 - 請求項27記載の方法において、前記有機コーティングは、ポリテトラフルオロエチレン又はシリコン系ポリマー類を含む方法。
- 請求項27又は28に記載の方法において、前記シャドウマスクはアパーチャを有し、当該方法はさらに、
前記アパーチャが規定されたシャドウマスクの前記表面を前記有機コーティングで被覆するステップ
を含む方法。 - 請求項8記載の方法に用いられる共通の原料物質であって、フラーレン及びマグネシウムを含む共通の原料物質。
- 請求項30記載の共通の原料物質において、当該共通の原料物質は、固形である共通の原料物質。
- 請求項31記載の共通の原料物質において、当該共通の原料物質は、ペレット、粒子、粉末若しくはバー又はこれらの任意の組み合わせである共通の原料物質。
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Publication number | Publication date |
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CN108611591A (zh) | 2018-10-02 |
KR20150099517A (ko) | 2015-08-31 |
US20150287846A1 (en) | 2015-10-08 |
US20190355855A1 (en) | 2019-11-21 |
JP6517694B2 (ja) | 2019-05-22 |
CA2890253A1 (en) | 2014-05-15 |
CN108611591B (zh) | 2021-05-04 |
CN104769149A (zh) | 2015-07-08 |
US20230089852A1 (en) | 2023-03-23 |
CN104769149B (zh) | 2018-05-22 |
US11532763B2 (en) | 2022-12-20 |
US20210351307A1 (en) | 2021-11-11 |
US10439081B2 (en) | 2019-10-08 |
EP2917382A1 (en) | 2015-09-16 |
EP2917382A4 (en) | 2016-07-06 |
US11764320B2 (en) | 2023-09-19 |
WO2014071518A1 (en) | 2014-05-15 |
US11145771B2 (en) | 2021-10-12 |
KR102129869B1 (ko) | 2020-07-06 |
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