JP2016224470A - リソグラフィ装置及び装置の動作方法 - Google Patents
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- 238000000034 method Methods 0.000 title description 8
- 239000000758 substrate Substances 0.000 claims abstract description 360
- 239000007788 liquid Substances 0.000 claims abstract description 289
- 238000000605 extraction Methods 0.000 claims abstract description 236
- 239000012530 fluid Substances 0.000 claims abstract description 172
- 230000005855 radiation Effects 0.000 claims description 45
- 238000000671 immersion lithography Methods 0.000 claims description 6
- 238000007654 immersion Methods 0.000 description 71
- 230000004888 barrier function Effects 0.000 description 48
- 239000007789 gas Substances 0.000 description 46
- 230000005499 meniscus Effects 0.000 description 46
- 238000000059 patterning Methods 0.000 description 30
- 210000003128 head Anatomy 0.000 description 19
- 238000005259 measurement Methods 0.000 description 17
- 230000003287 optical effect Effects 0.000 description 17
- 239000011248 coating agent Substances 0.000 description 13
- 238000000576 coating method Methods 0.000 description 13
- 239000011148 porous material Substances 0.000 description 12
- 238000004590 computer program Methods 0.000 description 7
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 7
- 238000011109 contamination Methods 0.000 description 6
- 239000010410 layer Substances 0.000 description 6
- 238000004519 manufacturing process Methods 0.000 description 6
- 239000012071 phase Substances 0.000 description 6
- 230000006399 behavior Effects 0.000 description 5
- 230000008020 evaporation Effects 0.000 description 5
- 238000001704 evaporation Methods 0.000 description 5
- 239000000284 extract Substances 0.000 description 5
- 239000002245 particle Substances 0.000 description 5
- 230000000694 effects Effects 0.000 description 4
- 230000002209 hydrophobic effect Effects 0.000 description 4
- 238000012545 processing Methods 0.000 description 4
- 238000004140 cleaning Methods 0.000 description 3
- 238000013500 data storage Methods 0.000 description 3
- 230000007547 defect Effects 0.000 description 3
- 238000009826 distribution Methods 0.000 description 3
- 230000006870 function Effects 0.000 description 3
- 230000007246 mechanism Effects 0.000 description 3
- 238000012986 modification Methods 0.000 description 3
- 230000004048 modification Effects 0.000 description 3
- 230000010363 phase shift Effects 0.000 description 3
- 239000000243 solution Substances 0.000 description 3
- 230000015572 biosynthetic process Effects 0.000 description 2
- 238000001816 cooling Methods 0.000 description 2
- NNBZCPXTIHJBJL-UHFFFAOYSA-N decalin Chemical compound C1CCCC2CCCCC21 NNBZCPXTIHJBJL-UHFFFAOYSA-N 0.000 description 2
- 238000013461 design Methods 0.000 description 2
- 238000006073 displacement reaction Methods 0.000 description 2
- 230000009977 dual effect Effects 0.000 description 2
- 238000005286 illumination Methods 0.000 description 2
- 238000003384 imaging method Methods 0.000 description 2
- 230000003993 interaction Effects 0.000 description 2
- 238000001459 lithography Methods 0.000 description 2
- 239000011159 matrix material Substances 0.000 description 2
- 230000015654 memory Effects 0.000 description 2
- 238000003032 molecular docking Methods 0.000 description 2
- 239000002689 soil Substances 0.000 description 2
- 239000007787 solid Substances 0.000 description 2
- 239000010409 thin film Substances 0.000 description 2
- 230000005514 two-phase flow Effects 0.000 description 2
- 238000009736 wetting Methods 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 238000009825 accumulation Methods 0.000 description 1
- 230000001154 acute effect Effects 0.000 description 1
- 238000004873 anchoring Methods 0.000 description 1
- 239000007864 aqueous solution Substances 0.000 description 1
- 238000003491 array Methods 0.000 description 1
- 238000000429 assembly Methods 0.000 description 1
- 230000000712 assembly Effects 0.000 description 1
- 230000002238 attenuated effect Effects 0.000 description 1
- 230000005587 bubbling Effects 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 239000000356 contaminant Substances 0.000 description 1
- -1 decalin Chemical class 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 238000001514 detection method Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 239000012153 distilled water Substances 0.000 description 1
- 238000005323 electroforming Methods 0.000 description 1
- 230000005670 electromagnetic radiation Effects 0.000 description 1
- 238000011049 filling Methods 0.000 description 1
- 229930195733 hydrocarbon Natural products 0.000 description 1
- 150000002430 hydrocarbons Chemical class 0.000 description 1
- 230000005661 hydrophobic surface Effects 0.000 description 1
- 239000011261 inert gas Substances 0.000 description 1
- 238000007689 inspection Methods 0.000 description 1
- 230000001788 irregular Effects 0.000 description 1
- 238000003698 laser cutting Methods 0.000 description 1
- 239000002346 layers by function Substances 0.000 description 1
- 239000004973 liquid crystal related substance Substances 0.000 description 1
- 239000007791 liquid phase Substances 0.000 description 1
- 238000011068 loading method Methods 0.000 description 1
- 238000003754 machining Methods 0.000 description 1
- 230000005381 magnetic domain Effects 0.000 description 1
- 238000012423 maintenance Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- QSHDDOUJBYECFT-UHFFFAOYSA-N mercury Chemical compound [Hg] QSHDDOUJBYECFT-UHFFFAOYSA-N 0.000 description 1
- 229910052753 mercury Inorganic materials 0.000 description 1
- 239000002105 nanoparticle Substances 0.000 description 1
- 238000001259 photo etching Methods 0.000 description 1
- 230000008569 process Effects 0.000 description 1
- 210000001747 pupil Anatomy 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 230000008929 regeneration Effects 0.000 description 1
- 238000011069 regeneration method Methods 0.000 description 1
- 230000003252 repetitive effect Effects 0.000 description 1
- 238000005096 rolling process Methods 0.000 description 1
- 238000007789 sealing Methods 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 238000007493 shaping process Methods 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 239000000725 suspension Substances 0.000 description 1
- 238000012546 transfer Methods 0.000 description 1
- PXXNTAGJWPJAGM-UHFFFAOYSA-N vertaline Natural products C1C2C=3C=C(OC)C(OC)=CC=3OC(C=C3)=CC=C3CCC(=O)OC1CC1N2CCCC1 PXXNTAGJWPJAGM-UHFFFAOYSA-N 0.000 description 1
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-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
- H01L21/0271—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers
- H01L21/0273—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers characterised by the treatment of photoresist layers
- H01L21/0274—Photolithographic processes
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70216—Mask projection systems
- G03F7/70341—Details of immersion lithography aspects, e.g. exposure media or control of immersion liquid supply
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/20—Exposure; Apparatus therefor
- G03F7/2041—Exposure; Apparatus therefor in the presence of a fluid, e.g. immersion; using fluid cooling means
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/20—Exposure; Apparatus therefor
- G03F7/2041—Exposure; Apparatus therefor in the presence of a fluid, e.g. immersion; using fluid cooling means
- G03F7/2043—Exposure; Apparatus therefor in the presence of a fluid, e.g. immersion; using fluid cooling means with the production of a chemical active agent from a fluid, e.g. an etching agent; with meterial deposition from the fluid phase, e.g. contamination resists
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70691—Handling of masks or workpieces
- G03F7/707—Chucks, e.g. chucking or un-chucking operations or structural details
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70691—Handling of masks or workpieces
- G03F7/70716—Stages
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70691—Handling of masks or workpieces
- G03F7/70733—Handling masks and workpieces, e.g. exchange of workpiece or mask, transport of workpiece or mask
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- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Power Engineering (AREA)
- Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- General Chemical & Material Sciences (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
Abstract
【解決手段】流体ハンドリング構造は、投影システムと(i)基板、又は(ii)基板テーブル、又は(iii)シャッタ部材の表面、又は(iv)(i)〜(iii)から選択された任意の組み合わせとの間に液体を供給し、閉じ込める。シャッタ部材の表面はテーブルの表面に隣接し、それと同一平面上にある。シャッタ部材とテーブルの表面はギャップによって離間することができる。流体抽出システムは、ギャップから液体を除去する。
【選択図】図12
Description
Claims (15)
- 基板を支持する基板テーブルと、
使用時に前記基板テーブルの表面と実質的に同一平面上になる上面を有するシャッタ部材であって、該シャッタ部材の表面と前記基板テーブルとがギャップによって離間される、シャッタ部材と、
前記投影システムと(i)前記基板、又は(ii)前記基板テーブル、又は(iii)前記シャッタ部材の表面、又は(iv)(i)〜(iii)から選択された任意の組み合わせとの間に液体を供給し、閉じ込める流体ハンドリング構造と、
前記シャッタ部材及び/又は前記基板テーブルの側壁表面にある抽出開口を通して前記ギャップから液体を除去する流体抽出システムと、
を備える液浸リソグラフィ装置。 - 前記シャッタ部材が第二テーブル、又は前記基板テーブルと第二テーブルの間のブリッジである、請求項1に記載の装置。
- 前記第二テーブルが第二基板テーブルである、請求項2に記載の装置。
- 前記ブリッジが後退可能なブリッジである、請求項1又は2に記載の装置。
- 前記流体抽出システムが複数の抽出開口を備え、各開口が前記側壁表面内に画定される、前記請求項のいずれかに記載の装置。
- 前記開口を囲む前記ギャップの前記側壁表面が親液性である、請求項5に記載の装置。
- 前記ギャップの表面の少なくとも一部が疎液性である、請求項5又は6に記載の装置。
- 各抽出開口が抽出流路の口であり、各抽出流路がコレクタ流路に接続され、前記コレクタ流路が少なくとも2つの抽出流路に、望ましくは全部の前記抽出流路に共通であり、前記コレクタ流路が、前記基板テーブル又は前記抽出開口が形成されたシャッタ部材内にある、前記請求項のいずれか1項に記載の装置。
- 前記コレクタ流路の容積が、前記抽出流路の組み合わせた容積より実質的に大きい、請求項8に記載の装置。
- 前記ギャップ内で、前記基板テーブル、又は前記シャッタ部材、又は両方の前記縁に沿ってパターン状に配置された複数の抽出開口を備える、前記請求項のいずれか1項に記載の装置。
- 基板を支持する基板テーブルと、
前記基板のターゲット部分にパターン付き放射ビームを誘導する投影システムと前記基板、又は前記基板テーブル、又はその両方との間に液体を供給し、閉じ込める流体ハンドリング構造と、
前記基板と前記基板テーブルの間のギャップから液体を除去する液体抽出システムであって、液体を抽出する、前記ギャップの表面に画定された複数の抽出開口を備える、流体抽出システムと、
を備える液浸リソグラフィ装置。 - 基板を支持する基板テーブルと、
前記基板のターゲット部分にパターン付き放射ビームを誘導する投影システムと、自身の間にギャップが画定された2つの部分を備える下にある実質的に平面の表面との間に液体を供給し、閉じ込める流体ハンドリング構造と、
前記ギャップから液体を除去する流体抽出システムであって、パターン状に配置された複数の開口を備える、流体抽出システムと、
を備える液浸リソグラフィ装置。 - 基板のターゲット部分にパターン付き放射ビームを誘導する投影システムと、自身の間にギャップが画定された2つの部分を備える、下にある実質的に平面の表面との間に液体を供給し、閉じ込めるために流体ハンドリング構造を使用すること、及びパターン状に配置された複数の開口を備える流体抽出システムを使用して、ギャップから液体を除去すること、を含むデバイス製造方法。
- リソグラフィ装置であって、
投影システムと、
第一オブジェクトと、
第二オブジェクトと、
前記投影システムの下で前記第一オブジェクトが前記第二オブジェクトに取って代わる場合、両方のオブジェクトが常に実質的に同じ方向に移動し、前記投影システムの下で前記第二オブジェクトが前記第一オブジェクトに取って代わる場合、両方のオブジェクトが常に実質的に同じ方向に移動するように、前記装置内の前記第一及び第二オブジェクトの動作を制御するコントローラと、
を備えるリソグラフィ装置。 - 基板のターゲット部分にパターン付き放射ビームを誘導する投影システムと、自身の間にギャップが画定された2つの部分を備える、下にある実質的に平面の表面との間に液体を供給し、閉じ込めるために流体ハンドリング構造を使用すること、及び前記流体ハンドリング構造の下で前記ギャップを第一方向にのみ複数回移動させること、を含むデバイス製造方法。
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US7196508P | 2008-05-28 | 2008-05-28 | |
US61/071,965 | 2008-05-28 | ||
US13603008P | 2008-08-07 | 2008-08-07 | |
US61/136,030 | 2008-08-07 |
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JP2015087473A Division JP6017618B2 (ja) | 2008-05-28 | 2015-04-22 | リソグラフィ装置及び装置の動作方法 |
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JP6343320B2 JP6343320B2 (ja) | 2018-06-13 |
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JP2012208465A Pending JP2012253389A (ja) | 2008-05-28 | 2012-09-21 | リソグラフィ装置及び装置の動作方法 |
JP2015087473A Active JP6017618B2 (ja) | 2008-05-28 | 2015-04-22 | リソグラフィ装置及び装置の動作方法 |
JP2016190199A Active JP6343320B2 (ja) | 2008-05-28 | 2016-09-28 | リソグラフィ装置及び装置の動作方法 |
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EP (1) | EP2128703A1 (ja) |
JP (4) | JP5097166B2 (ja) |
KR (2) | KR101099059B1 (ja) |
CN (1) | CN101598905B (ja) |
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US8421993B2 (en) * | 2008-05-08 | 2013-04-16 | Asml Netherlands B.V. | Fluid handling structure, lithographic apparatus and device manufacturing method |
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JP5315100B2 (ja) * | 2009-03-18 | 2013-10-16 | 株式会社ニューフレアテクノロジー | 描画装置 |
JP5058305B2 (ja) | 2009-06-19 | 2012-10-24 | エーエスエムエル ネザーランズ ビー.ブイ. | 液浸リソグラフィ装置、液体閉じ込め構造体、液浸リソグラフィ装置用の投影システムの最終エレメント、および基板テーブル |
NL2004820A (en) * | 2009-06-30 | 2011-01-04 | Asml Netherlands Bv | Lithographic apparatus and a method of measuring flow rate in a two phase flow. |
JP5507392B2 (ja) | 2009-09-11 | 2014-05-28 | エーエスエムエル ネザーランズ ビー.ブイ. | シャッター部材、リソグラフィ装置及びデバイス製造方法 |
NL2005126A (en) * | 2009-09-21 | 2011-03-22 | Asml Netherlands Bv | Lithographic apparatus, coverplate and device manufacturing method. |
NL2005666A (en) | 2009-12-18 | 2011-06-21 | Asml Netherlands Bv | A lithographic apparatus and a device manufacturing method. |
NL2006127A (en) * | 2010-02-17 | 2011-08-18 | Asml Netherlands Bv | A substrate table, a lithographic apparatus and a method for manufacturing a device using a lithographic apparatus. |
NL2006818A (en) | 2010-07-02 | 2012-01-03 | Asml Netherlands Bv | A method of adjusting speed and/or routing of a table movement plan and a lithographic apparatus. |
US9568828B2 (en) * | 2012-10-12 | 2017-02-14 | Nikon Corporation | Exposure apparatus, exposing method, device manufacturing method, program, and recording medium |
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EP2128703A1 (en) | 2009-12-02 |
TW201007372A (en) | 2010-02-16 |
CN101598905A (zh) | 2009-12-09 |
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JP2009290212A (ja) | 2009-12-10 |
US11187991B2 (en) | 2021-11-30 |
US20090296065A1 (en) | 2009-12-03 |
SG176490A1 (en) | 2011-12-29 |
JP6343320B2 (ja) | 2018-06-13 |
JP2012253389A (ja) | 2012-12-20 |
US20220082948A1 (en) | 2022-03-17 |
SG157342A1 (en) | 2009-12-29 |
CN101598905B (zh) | 2013-03-20 |
KR101299540B1 (ko) | 2013-08-23 |
JP6017618B2 (ja) | 2016-11-02 |
US9176393B2 (en) | 2015-11-03 |
JP5097166B2 (ja) | 2012-12-12 |
TWI444783B (zh) | 2014-07-11 |
US20160011522A1 (en) | 2016-01-14 |
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KR20090123829A (ko) | 2009-12-02 |
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