JP2015115611A5 - - Google Patents

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JP2015115611A5
JP2015115611A5 JP2014248620A JP2014248620A JP2015115611A5 JP 2015115611 A5 JP2015115611 A5 JP 2015115611A5 JP 2014248620 A JP2014248620 A JP 2014248620A JP 2014248620 A JP2014248620 A JP 2014248620A JP 2015115611 A5 JP2015115611 A5 JP 2015115611A5
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region
cylindrical
cylindrical dielectric
power transistor
transistor device
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JP6624778B2 (ja
JP2015115611A (ja
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JP2014248620A 2013-12-13 2014-12-09 円柱形領域をもつ縦型トランジスタ装置構造 Expired - Fee Related JP6624778B2 (ja)

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US201361915772P 2013-12-13 2013-12-13
US61/915,772 2013-12-13
US14/520,527 2014-10-22
US14/520,527 US9543396B2 (en) 2013-12-13 2014-10-22 Vertical transistor device structure with cylindrically-shaped regions

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JP2015115611A JP2015115611A (ja) 2015-06-22
JP2015115611A5 true JP2015115611A5 (enExample) 2018-01-25
JP6624778B2 JP6624778B2 (ja) 2019-12-25

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US (1) US9543396B2 (enExample)
EP (1) EP2884540B1 (enExample)
JP (1) JP6624778B2 (enExample)
CN (1) CN104716183B (enExample)

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP6448513B2 (ja) * 2015-11-16 2019-01-09 株式会社東芝 半導体装置
WO2017168733A1 (ja) * 2016-03-31 2017-10-05 新電元工業株式会社 半導体装置の製造方法及び半導体装置
JP6761389B2 (ja) * 2017-09-19 2020-09-23 株式会社東芝 半導体装置
CN110459599B (zh) * 2019-08-31 2021-03-16 电子科技大学 具有深埋层的纵向浮空场板器件及制造方法
JP7246287B2 (ja) 2019-09-13 2023-03-27 株式会社東芝 半導体装置およびその製造方法
US11322612B2 (en) 2019-09-17 2022-05-03 Kabushiki Kaisha Toshiba Semiconductor device with region of varying thickness
JP7295052B2 (ja) * 2020-02-28 2023-06-20 株式会社東芝 半導体装置
JP7465123B2 (ja) * 2020-03-12 2024-04-10 株式会社東芝 半導体装置
JP7633051B2 (ja) * 2021-03-16 2025-02-19 株式会社東芝 半導体装置
JP7728216B6 (ja) * 2022-03-23 2025-09-19 株式会社東芝 半導体装置

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