JP2015106617A - 基板接合方法、バンプ形成方法及び半導体装置 - Google Patents

基板接合方法、バンプ形成方法及び半導体装置 Download PDF

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Publication number
JP2015106617A
JP2015106617A JP2013247505A JP2013247505A JP2015106617A JP 2015106617 A JP2015106617 A JP 2015106617A JP 2013247505 A JP2013247505 A JP 2013247505A JP 2013247505 A JP2013247505 A JP 2013247505A JP 2015106617 A JP2015106617 A JP 2015106617A
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Prior art keywords
substrate
resin layer
solder
adhesive resin
opening
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JP2013247505A
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JP6004441B2 (ja
Inventor
豊広 青木
Toyohiro Aoki
豊広 青木
和重 鳥山
Kazushige Toriyama
和重 鳥山
森　裕幸
Hiroyuki Mori
裕幸 森
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International Business Machines Corp
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International Business Machines Corp
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Priority to JP2013247505A priority Critical patent/JP6004441B2/ja
Priority to US14/548,583 priority patent/US9299606B2/en
Publication of JP2015106617A publication Critical patent/JP2015106617A/ja
Priority to US14/930,984 priority patent/US9508594B2/en
Priority to US15/255,588 priority patent/US9893031B2/en
Application granted granted Critical
Publication of JP6004441B2 publication Critical patent/JP6004441B2/ja
Priority to US15/804,478 priority patent/US10141278B2/en
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    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
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Abstract

【課題】本発明は、ファインピッチ化により深刻化する歩留まりの低下を回避しつつ、高い接合信頼性をもって基板を接合することができる新規な基板接合方法を提供することを目的とする。
【解決手段】本発明によれば、パッドが形成された第１の基板の表面に接着性樹脂層を形成する工程と、前記パッドの上で前記接着性樹脂層に開口部を形成する工程と、前記開口部に溶融はんだを充填して柱状のはんだバンプを形成する工程と、第２の基板に形成された端子と前記はんだバンプを位置合わせした状態で該第２の基板と前記第１の基板を加熱しながら圧着する工程と、を含む基板接合方法が提供される。
【選択図】図１

Description

本発明は、基板接合方法に関し、より詳細には、接着性樹脂を用いたバンプ形成と当該バンプを用いた基板接合方法に関する。
従来、基板上にチップを実装する方法として、ダイの底面と基板をアレイ状に並んだバンプを介して接続する“フリップチップ工法”が知られており、その中でも、バンプとしてはんだボールを用いるＣ４（Controlled Collapse Chip Connection）工法が広く用いられている。Ｃ４工法では、ダイ底面の電極パッド上にスクリーン印刷したはんだペーストと基板端子を位置合わせした後、はんだを溶融してダイ底面の電極パッドと基板端子を電気的に接続する。最後に基板とダイの間にアンダーフィル剤が充填され、ダイが固定される。
一方、近年のチップの高集積化に伴うパッドピッチの狭小化を受けて、はんだバンプの微細化が進んでいる。その結果、チップと基板のギャップが狭くなり、このことがアンダーフィル剤の充填を困難にする。
この点につき、チップと基板の間に十分なギャップを確保するために、めっき工法で形成した銅の柱（ピラー）の上にはんだキャップを形成してなるＣｕピラーバンプを用いることが検討されている（例えば、特許文献１）。しかしながら、Ｃｕピラーバンプには、以下の問題がある。
まず第１に、銅の弾性率は、はんだ材料のそれに比べて３倍以上大きく、また、銅の降伏応力は、はんだ材料のそれに比べて８倍以上大きいため、チップと基板を接合する際に生じる熱応力（例えば、シリコンチップと有機基板の熱膨張係数の差に起因する応力）を十分に緩衝することができない。その結果、チップが熱応力の影響を大きく受けるようになり、機械的強度の弱い誘電率層間絶縁膜を採用する配線層にクラックが生じやすくなって歩留まりが低下する。第２に、銅ピラーバンプは電解めっきによって形成されるためバンプ高さにばらつきが生じやすく、その結果、バンプと基板端子の接合性が不安定になる。そして、これらの問題は、ファインピッチ化によりますます深刻化する。
特表２０１２−５３２４５９号公報
本発明は、上記従来技術における課題に鑑みてなされたものであり、本発明は、ファインピッチ化により深刻化する歩留まりの低下を回避しつつ、高い接合信頼性をもって基板を接合することができる新規な基板接合方法を提供することを目的とする。
本発明者は、ファインピッチ化により深刻化する歩留まりの低下を回避しつつ、高い接合信頼性をもって基板を接合することができる新規な基板接合方法につき鋭意検討した結果、以下の構成に想到し、本発明に至ったのである。
すなわち、本発明によれば、パッドが形成された第１の基板の表面に接着性樹脂層を形成する工程と、前記パッドの上で前記接着性樹脂層に開口部を形成する工程と、前記開口部に溶融はんだを充填して柱状のはんだバンプを形成する工程と、第２の基板に形成された端子と前記はんだバンプを位置合わせした状態で該第２の基板と前記第１の基板を加熱しながら圧着する工程と、を含む基板接合方法が提供される。
上述したように、本発明によれば、ファインピッチ化により深刻化する歩留まりの低下を回避しつつ、高い接合信頼性をもって基板を接合することができる新規な基板接合方法が提供される。
本実施形態のバンプ形成方法の工程を模式的に示す図。 本実施形態の基板接合方法の工程を模式的に示す図。 本実施形態の接合工程における温度プロファイルと圧着圧力プロファイルを示す図。 はんだピラーバンプ構造が形成された基板同士を接合する態様を示す図。 本実施形態の基板接合方法の効果を説明するための概念図。 本実施形態の基板接合方法の効果を説明するための概念図。 はんだピラーバンプと放熱構造体を同時に形成した接着用樹脂層の断面図。 はんだピラーバンプと放熱構造体を同時に形成した接着用樹脂層の断面図。
以下、本発明を図面に示した実施の形態をもって説明するが、本発明は、図面に示した実施の形態に限定されるものではない。なお、以下に参照する各図においては、共通する要素について同じ符号を用い、適宜、その説明を省略するものとする。
また、以下に参照する各図は、理解を助けるために必要に応じてデフォルメされており、実際の縮尺に従っていないことに留意されたい。さらに、各図においては、配線やバンプ下地金属（ＵＢＭ）など本発明の要旨に直接関係しない構成については、その図示を省略するものとする。
図１は、本実施形態の接着性樹脂を用いたバンプ形成方法の工程を模式的に示す。以下、図１に基づいて、本実施形態のバンプ形成方法の手順を説明する。
本実施形態においては、まず、図１（ａ）に示すように、表面に複数の電極パッド１２が形成された基板１０を準備する。本実施形態における基板１０は、表面に複数の電極パッドが形成されているものであれば、シリコン基板、有機基板、セラミック基板、リジッド基板、フレキシブル基板のいかんを問わず、いかなる基板であってもよい。また、基板１０は、表面に複数の電極パッドが形成されているものであれば、ウエハから個片化されたダイ、ウエハレベル・チップサイズ・パッケージ（ＷＬ−ＣＳＰ）におけるプロセス処理後のウエハ、再配線用インターポーザー、メイン基板、パッケージ基板など、いかなる種類の基板であってもよい。
本実施形態においては、続いて、図１（ｂ）に示すように、準備した基板１０の表面（電極パッド１２が形成されている面）の上に接着性樹脂層１３を形成する。具体的には、基板１０の表面にスピンコートなどの既知の手法で熱硬化性の樹脂組成物を一様に塗布した後、これを仮硬化して接着性樹脂層１３を形成する。
本実施形態において、接着性樹脂層１３は熱接着性を有し、さらに好ましくは、光感光性を有する。
本実施形態においては、続いて、図１（ｃ）に示すように、接着性樹脂層１３をパターニングして電極パッド１２（以下、パッド１２という）の上に開口部を形成する。パターニングは、レーザアブレーションやドライエッチングなど既知の手法によって実施することができる。また、接着性樹脂層１３が光感光性を有する場合には、露光および現像によってパターニングすることができる。パターニングの結果、パッド１２の直上に開口部１４が形成され、パッド１２の上面が露出する。
本実施形態においては、続いて、射出形成技術を使用して開口部１４に溶融はんだを充填する。はんだ材料としては、ＳｎやＩｎを主成分としてＡｇ、Ｃｕ、Ｚｎ、Ｂｉ、ＩｎＳｂ、Ｎｉ、Ｃｏ、Ｇｅ、Ｆｅなどを含有する錫合金からなる無鉛はんだを用いることができる。
本実施形態においては、上述した溶融はんだの充填工程を、インターナショナル・ビジネス・マシーンズ・コーポレーションが開発したＩＭＳ（Injection Molded Soldering）工法を使用して実施することができる。図１（ｄ）は、ＩＭＳ工法による溶融はんだの充填工程を示す。ここでは、はんだを溶融した状態で保持するリザーバ５２、チャネル５４および送出スロット５６を含んで構成される充填ヘッド５０を接着性樹脂層１３に実質的に接触させた状態で水平方向に移動させる。この間、ポート５８を介してリザーバ５２に背圧を与えて溶融はんだを下方のチャネル５４に押し出す。その結果、送出スロット５６の直下に位置する開口部１４に溶融はんだが直接供給され、充填される。
送出スロット５６を通して開口部１４に充填された溶融はんだは、その後、開口部１４内で固化する。その結果、図１（ｅ）に示すように、パッド１２の直上に柱状のはんだバンプ１６（以下、はんだピラーバンプ１６という）が形成される。本実施形態においては、表面張力の作用ではんだピラーバンプ１６その頭部が凸曲面状に盛り上がり、固化した時点で、接着性樹脂層１３の上面から若干の高さをもって突出する。
以上、図１に基づいて、はんだピラーバンプの形成方法について説明してきたが、続いて、はんだピラーバンプを用いた基板接合方法を図２に基づいて説明する。
図２は、本実施形態のはんだピラーバンプを用いた基板接合方法の工程を模式的に示す。本実施形態においては、まず、はんだピラーバンプが形成された基板を準備する。ここでは、図２（ｆ）に示すように、ＷＬ−ＣＳＰにおけるプロセス処理後のウエハとして参照される基板であって、はんだピラーバンプ１６が形成された基板１０をダイシングしてダイ２０を得た場合を例にとって説明する。
続いて、ダイ２０を接合する基板３０を準備する。本実施形態における基板３０は、はんだピラーバンプの接続先となる複数の端子３２が表面に形成されるものであれば、いかなる基板であってもよく、この点については、基板１０について先述した内容と重複するので、これ以上の説明は省略する。
本実施形態においては、続いて、ダイ２０と基板３０をフリップチップ工法によって接合する。具体的には、図２（ｇ）に示すように、ダイ２０のはんだピラーバンプが形成された面を下に向けて、はんだピラーバンプ１６の位置と基板３０の端子３２の位置を合わせた後、図２（ｈ）に示すように、ダイ２０と基板３０を加圧して圧着しながら加熱する。
ここで、上述した接合工程における温度と圧着圧力の関係について、図３に基づいて説明する。
図３は、接合工程における温度プロファイルと圧着圧力プロファイルを対応付けて示す。図３に示すように、本実施形態においては、最初に、はんだピラーバンプ１６を構成するはんだ材料の融点(m.p.)よりも低い温度条件下で十分な圧力をかけてダイ２０と基板３０を圧着する。この段階においては、ダイ２０に形成されたはんだピラーバンプ１６は融解せず、接着性樹脂層１３の熱接着性も発現しない。
その後、圧着圧力を若干下げた状態で、温度条件をはんだ材料の融点(m.p.)よりも高くしてリフロー処理を行う。この段階においては、ダイ２０に形成されたはんだピラーバンプ１６が融解して基板３０の端子３２に濡れ広がるとともに、接着性樹脂層１３がその熱接着性を発現して、基板３０の端子３２が形成された表面に接着する。
その後の冷却工程において、融解はんだと接着性樹脂層１３の接着面が固化する。その結果、パッド１２と端子３２とがはんだピラーバンプ１６を介して電気的に接続され、且つ、基板３０上にダイ２０が確実に固定される。
なお、上述した図２においては、基板３０の端子３２として電極パッドが形成された態様を示したが、これはあくまで例示であり、はんだピラーバンプ１６の接続先の端子は、電極パッドに限らず、バンプであってもよい。この点につき、図４は、上述したはんだピラーバンプ構造が形成された基板同士をフリップチップ工法によって接合する態様を示す。この場合、基板１０の方に接着性樹脂層１３が形成されていれば、基板３０の上に形成される樹脂層４３は熱接着性を有していなくてもよい。
以上、はんだピラーバンプを使用した基板接合方法について説明してきたが、次に、本発明の基板接合方法の効果について説明する。
まず第１に、はんだピラーバンプ１６を形成するための型となる接着性樹脂層１３が基板の接合と同時にそのままアンダーフィル剤として機能するので、アンダーフィル剤を充填するための追加の工程が不要になり、コスト面で有利になる。
第２に、Ｃ４（Controlled Collapse Chip Connection）工法との比較において、さらなるファインピッチ化が可能になる。この点につき、図５に基づいて説明する。
図５（ａ）に示すように、従来のＣ４工法においては、パッドピッチＰの狭小化が進むにつれ、隣接するはんだボール同士の距離が小さくなり、はんだボールの接触リスクが増大する。さらに、パッドピッチＰの狭小化が進むにつれ、はんだボールの径が小さくなるので、接合される２つの基板間に十分な隙間を確保することができなくなり、その結果、アンダーフィル剤の充填が困難になる。このことは、プロセス時間の増大化や未充填によるはんだショートといった問題を引き起こす。以上の理由から、従来のＣ４工法でファインピッチ化に対応するには限界があった。
一方、本発明の新規な工法によれば、図５（ｂ）に示すように、パッドピッチＰの狭小化に伴って隣接するバンプ同士の距離が小さくなる場合でも、隣接するはんだピラーバンプ１６の間には必ず接着性樹脂層１３が存在するので、はんだショートを懸念する必要がない。
第３に、はんだピラーバンプ１６を構成するはんだ金属の弾性率が銅のそれに比べて１／３程度であるため、Ｃｕピラーバンプを使用して基板間のギャップを確保する従来の構造に比較して、基板間に発生する熱応力を十分に緩衝することが可能になり、その結果、ポーラス化の進んだ誘電率層間絶縁膜を配線層に採用する基板においてもクラックが生じにくくなり、歩留まりが向上する。
第４に、バンプ形成方法の構成上、はんだピラーバンプ１６の頭部に樹脂が残存することがないため、基板接合時に樹脂の噛み込みが生じない。
第５に、バンプ高さにばらつきが生じやすいＣｕピラーバンプと異なり、はんだピラーバンプ１６のバンプ高さを揃えることが容易であることに加え、図６に示すように、接着性樹脂層１３の上面から若干の高さをもって突出する頭部１６ａの存在が基板端子３２との接触を確実なものにするため、高い接合信頼性が得られる。
以上、説明したように、本発明によれば、今後ますます加速するファインピッチ化に十分に対応することができるようになる。
ここで、例えばファインピッチ化のような高集積化に伴って深刻化するもう１つの問題として、“ホットスポット”の問題がある。この点につき、本発明は、バンプ構造の形成と同時に“放熱構造体”を形成する方法をホットスポット対策として提供する。
本発明の放熱構造体の形成方法は、これまで説明してきたはんだピラーバンプの形成方法と本質的に同じである。すなわち、基板上に形成された接着用樹脂層に対して、はんだピラーバンプ用の開口部を形成すると同時に、はんだピラーバンプと電気的に干渉しない適当な位置に放熱構造体用の開口部を形成する。その後、各開口部に対して溶融はんだを充填・固化することによって、はんだピラーバンプと放熱構造体を同時に形成する。このとき、放熱構造体は、デバイスに電気的な影響を与えることなく、接合される２つの基板を熱的に接続する。
図７は、はんだピラーバンプと放熱構造体を同時に形成した接着用樹脂層の断面図を例示的に示す。図７（ａ）は、円形断面を有するはんだピラーバンプ１６Ａの間に星形の断面を有する柱状の放熱構造体１８Ａを形成した例を示す。また、図７（ｂ）は、矩形断面を有するはんだピラーバンプ１６Ｂの間に十字形の断面を有する柱状の放熱構造体１８Ｂを形成した例を示す。さらに、図７（ｃ）は、円形断面を有するはんだピラーバンプ１６Ｃの間に十字形の断面を有する柱状の放熱構造体１８Ｃを形成した例を示す。
上述したような放熱構造体を接着用樹脂層内に形成することにより、接着用樹脂層を介して接合される２つの基板間において、厚み方向（Ｚ方向）の熱伝導率が大きくなる。さらに、複数の放熱構造体１８を接続して面方向に延在させれば、厚み方向（Ｚ方向）に加えて、面方向（ＸＹ方向）の熱伝導率を大きくすることができる。
下記表１は、図８（ａ）〜（ｃ）に示すパターン１〜３に従って、はんだピラーバンプ１６および放熱構造体１８を形成した場合における、厚み方向（Ｚ方向）と面方向（ＸＹ方向）の熱伝導率の理論値をまとめたものである。なお、下記理論値は、はんだの熱伝導率を50W/(m・K)、樹脂層の熱伝導率を0.5W/(m・K)として計算した。
パターン１とパターン２の理論値を比較すると、はんだピラーバンプ１６のサイズアップによって厚み方向（Ｚ方向）の熱伝導率が向上し、また、サイズアップに伴うバンプ間ギャップの狭小化によって面方向（ＸＹ方向）の熱伝導率も若干向上することが分かる。さらに、パターン１とパターン３の理論値を比較すると、格子状の放熱構造体１８を面方向に延在させる形で形成することによって、厚み方向（Ｚ方向）と面方向（ＸＹ方向）の熱伝導率が格段に向上することが分かる。
以上、説明したように、本発明の基板接合方法を用いれば、低コストと高い歩留まりの両方を実現しつつ、接合信頼性の高い半導体装置を製造することが可能になる。
これまで本発明を、特定の実施形態をもって説明してきたが、本発明は、上述した実施形態に限定されるものではなく、他の実施形態、追加、変更、削除など、当業者が想到することができる範囲内で変更することができ、いずれの態様においても本発明の作用・効果を奏する限り、本発明の範囲に含まれるものである。
１０，３０…基板
１２…電極パッド
１３…接着性樹脂層
１４…開口部
１６…はんだピラーバンプ
１８…放熱構造体
２０…ダイ
３２…端子
４３…樹脂層
５０…充填ヘッド
５２…リザーバ
５４…チャネル
５６…送出スロット
５８…ポート

Claims (10)

  1. パッドが形成された第１の基板の表面に接着性樹脂層を形成する工程と、
    前記パッドの上で前記接着性樹脂層に開口部を形成する工程と、
    前記開口部に溶融はんだを充填して柱状のはんだバンプを形成する工程と、
    第２の基板に形成された端子と前記はんだバンプを位置合わせした状態で該第２の基板と前記第１の基板を加熱しながら圧着する工程と、
    を含む基板接合方法。
  2. 前記接着用樹脂層が光感光性を有し、
    前記開口部を形成する工程が、接着用樹脂層を露光および現像して開口部を形成する工程である、
    請求項１に記載の基板接合方法。
  3. 前記第２の基板に形成された端子がパッドである、
    請求項１または２に記載の基板接合方法。
  4. 前記第２の基板に形成された端子がバンプである、
    請求項１または２に記載の基板接合方法。
  5. 前記接着性樹脂層の前記開口部が形成された位置とは別の位置に第２の開口部を形成する工程と、
    前記第２の開口部に溶融はんだを充填して前記第１の基板と前記第２の基板を熱的に接続するための放熱構造体を形成する工程と、
    をさらに含む、
    請求項１〜４のいずれか一項に記載の基板接合方法。
  6. 前記放熱構造体は、十字形の断面を有する、
    請求項５に記載の基板接合方法。
  7. 前記放熱構造体は、星形の断面を有する、
    請求項５に記載の基板接合方法。
  8. 複数の前記放熱構造体が接続して面方向に延在する、
    請求項５〜７のいずれか一項に記載の基板接合方法。
  9. 請求項１〜８のいずれか一項に記載の基板接合方法を用いて製造される半導体装置。
  10. パッドが形成された基板の表面に接着性樹脂層を形成する工程と、
    前記パッドの上で前記接着性樹脂層に開口部を形成する工程と、
    前記開口部に溶融はんだを充填して柱状のはんだバンプを形成する工程と、
    を含む、バンプ形成方法。

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