JP2014232806A - 貼り合わせウェーハの製造方法 - Google Patents
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- 238000000034 method Methods 0.000 title claims abstract description 72
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 30
- 239000010409 thin film Substances 0.000 claims abstract description 37
- 230000003647 oxidation Effects 0.000 claims abstract description 27
- 238000007254 oxidation reaction Methods 0.000 claims abstract description 27
- 239000001257 hydrogen Substances 0.000 claims abstract description 19
- 229910052739 hydrogen Inorganic materials 0.000 claims abstract description 19
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 claims abstract description 16
- 239000007789 gas Substances 0.000 claims description 22
- 238000005468 ion implantation Methods 0.000 claims description 21
- 230000007423 decrease Effects 0.000 claims description 7
- GPRLSGONYQIRFK-UHFFFAOYSA-N hydron Chemical compound [H+] GPRLSGONYQIRFK-UHFFFAOYSA-N 0.000 claims description 2
- 230000001965 increasing effect Effects 0.000 abstract description 8
- 235000012431 wafers Nutrition 0.000 description 148
- 238000010438 heat treatment Methods 0.000 description 54
- 239000010408 film Substances 0.000 description 52
- 230000003746 surface roughness Effects 0.000 description 15
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 12
- 150000002500 ions Chemical class 0.000 description 12
- 239000001301 oxygen Substances 0.000 description 12
- 229910052760 oxygen Inorganic materials 0.000 description 12
- 230000000052 comparative effect Effects 0.000 description 10
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 8
- 229910052710 silicon Inorganic materials 0.000 description 8
- 239000010703 silicon Substances 0.000 description 8
- 230000015572 biosynthetic process Effects 0.000 description 7
- 238000000926 separation method Methods 0.000 description 7
- 238000004140 cleaning Methods 0.000 description 6
- 239000013078 crystal Substances 0.000 description 6
- 238000000197 pyrolysis Methods 0.000 description 6
- 239000000758 substrate Substances 0.000 description 6
- -1 hydrogen ions Chemical class 0.000 description 5
- 238000005498 polishing Methods 0.000 description 5
- 230000003247 decreasing effect Effects 0.000 description 4
- 239000011261 inert gas Substances 0.000 description 4
- 238000000206 photolithography Methods 0.000 description 3
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- 230000001133 acceleration Effects 0.000 description 2
- 230000006866 deterioration Effects 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 230000001590 oxidative effect Effects 0.000 description 2
- 239000002245 particle Substances 0.000 description 2
- 238000004151 rapid thermal annealing Methods 0.000 description 2
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 1
- 239000007864 aqueous solution Substances 0.000 description 1
- 229910052796 boron Inorganic materials 0.000 description 1
- 238000003776 cleavage reaction Methods 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000005538 encapsulation Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 230000002708 enhancing effect Effects 0.000 description 1
- 238000005247 gettering Methods 0.000 description 1
- 238000002513 implantation Methods 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 238000002347 injection Methods 0.000 description 1
- 239000007924 injection Substances 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 238000003754 machining Methods 0.000 description 1
- 150000004767 nitrides Chemical class 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 238000009832 plasma treatment Methods 0.000 description 1
- 239000002244 precipitate Substances 0.000 description 1
- 230000007017 scission Effects 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
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- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/76—Making of isolation regions between components
- H01L21/762—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers
- H01L21/7624—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using semiconductor on insulator [SOI] technology
- H01L21/76251—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using semiconductor on insulator [SOI] technology using bonding techniques
- H01L21/76254—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using semiconductor on insulator [SOI] technology using bonding techniques with separation/delamination along an ion implanted layer, e.g. Smart-cut, Unibond
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- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
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- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02296—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer
- H01L21/02318—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer post-treatment
- H01L21/02321—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer post-treatment introduction of substances into an already existing insulating layer
- H01L21/02329—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer post-treatment introduction of substances into an already existing insulating layer introduction of nitrogen
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- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/185—Joining of semiconductor bodies for junction formation
- H01L21/187—Joining of semiconductor bodies for junction formation by direct bonding
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- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/26—Bombardment with radiation
- H01L21/263—Bombardment with radiation with high-energy radiation
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- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/324—Thermal treatment for modifying the properties of semiconductor bodies, e.g. annealing, sintering
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- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/324—Thermal treatment for modifying the properties of semiconductor bodies, e.g. annealing, sintering
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- H01L21/6835—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
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- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1203—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body the substrate comprising an insulating body on a semiconductor body, e.g. SOI
Abstract
Description
ボンドウェーハとしてCOP(Crystal Originated Particle)の無いシリコン単結晶ウェーハ(直径300mm、結晶方位<100>)を準備した。このボンドウェーハに190nmの酸化膜を成長した後、イオン注入機にて、50keVの加速エネルギーでH+イオンを5×1016atoms/cm2注入してイオン注入層を形成した。
実施例1と同一条件でボンドウェーハをイオン注入層から剥離して、ベースウェーハ上にSOI層を形成した。このSOI層の表面に、枚葉式RTA装置により水素50%アルゴン50%混合ガスの雰囲気で、急速昇温(30℃/秒)/急速降温(30℃/秒)にはさまれた温度保持時間のステップの保持開始時の温度を1175℃とし、保持時間の初めの10秒間は1175℃を維持し、10秒後から20秒間で温度を単調に減少して、保持終了時の温度を1150℃としたRTA処理を実施した。その際の熱処理の温度プロファイルは図2である。その後、バッチ式縦型熱処理炉にて、900℃のパイロ酸化及び1050℃の酸素1%を含むArガス熱処理を行い、SOI表面に酸化膜成長を施した。その後HF洗浄にて酸化膜を除去することで、SOI膜厚を90nmに調整した。
実施例1と同一条件でボンドウェーハをイオン注入層から剥離して、ベースウェーハ上にSOI層を形成した。このSOI層の表面に、枚葉式RTA装置により水素50%アルゴン50%混合ガスの雰囲気で、急速昇温(30℃/秒)/急速降温(30℃/秒)にはさまれた温度保持時間のステップの保持開始時の温度を1200℃とし、保持時間の30秒間で温度を単調に減少して、保持終了時の温度を1100℃としたRTA処理を実施した。その際の熱処理の温度プロファイルは図3である。その後、バッチ式縦型熱処理炉にて、900℃のパイロ酸化及び1050℃の酸素1%を含むArガス熱処理を行い、SOI表面に酸化膜成長を施した。その後HF洗浄にて酸化膜を除去することで、SOI膜厚を90nmに調整した。
実施例1と同一条件でボンドウェーハをイオン注入層から剥離して、ベースウェーハ上にSOI層を形成した。このSOI層の表面に、枚葉式RTA装置により水素50%アルゴン50%混合ガスの雰囲気で、急速昇温(30℃/秒)/急速降温(30℃/秒)にはさまれた温度保持時間のステップの保持開始時の温度を1160℃とし、保持時間の30秒間で温度を単調に減少して、保持終了時の温度を1100℃としたRTA処理を実施した。その際の熱処理の温度プロファイルは図4である。その後、バッチ式縦型熱処理炉にて、900℃のパイロ酸化及び1050℃の酸素1%を含むArガス熱処理を行い、SOI表面に酸化膜成長を施した。その後HF洗浄にて酸化膜を除去することで、SOI膜厚を90nmに調整した。
実施例1と同一条件でボンドウェーハをイオン注入層から剥離して、ベースウェーハ上にSOI層を形成した。このSOI層の表面に、枚葉式RTA装置により水素50%アルゴン50%混合ガスの雰囲気で、急速昇温(30℃/秒)/急速降温(30℃/秒)にはさまれた温度保持時間のステップの保持開始温度を1175℃とし、保持時間の30秒間で温度を維持したまま、保持終了時の温度を1175℃のままとしたRTA処理を実施した。その際の熱処理の温度プロファイルは図5である。その後、バッチ式縦型熱処理炉にて、900℃のパイロ酸化及び1050℃の酸素1%を含むArガス熱処理を行い、SOI表面に酸化膜成長を施した。その後HF洗浄にて酸化膜を除去することで、SOI膜厚を90nmに調整した。
実施例1と同一条件でボンドウェーハをイオン注入層から剥離して、ベースウェーハ上にSOI層を形成した。このSOI層の表面に、枚葉式RTA装置により水素50%アルゴン50%混合ガスの雰囲気で、急速昇温(30℃/秒)/急速降温(30℃/秒)にはさまれた温度保持時間のステップの保持開始時の温度を1100℃とし、保持時間の30秒間で温度を維持したまま、保持終了時の温度を1100℃のままとしたRTA処理を実施した。その際の熱処理の温度プロファイルは図6である。その後、バッチ式縦型熱処理炉にて、900℃のパイロ酸化及び1050℃の酸素1%を含むArガス熱処理を行い、SOI表面に酸化膜成長を施した。その後HF洗浄にて酸化膜を除去することで、SOI膜厚を90nmに調整した。
Claims (3)
- ボンドウェーハの表面から水素イオン、希ガスイオンの少なくとも一種類のガスイオンをイオン注入してイオン注入層を形成し、前記ボンドウェーハのイオン注入した表面とベースウェーハの表面とを直接あるいは絶縁膜を介して貼り合わせた後、前記イオン注入層でボンドウェーハを剥離させることにより、前記ベースウェーハ上に薄膜を有する貼り合わせウェーハを作製する、貼り合わせウェーハの製造方法において、
前記ボンドウェーハを剥離した後の貼り合わせウェーハに対し、水素含有雰囲気下でRTA処理を行った後、犠牲酸化処理を行って前記薄膜を減厚する工程を有し、
前記RTA処理の保持開始温度を1150℃よりも高い温度とし、前記RTA処理の保持終了温度を1150℃以下とした条件で、前記RTA処理を行うことを特徴とする貼り合わせウェーハの製造方法。 - 前記保持開始温度から前記保持終了温度までの保持時間中は、温度下降を伴うが温度上昇を伴わないことを特徴とする請求項1に記載の貼り合わせウェーハの製造方法。
- 前記保持開始温度を1175℃以上1250℃以下とし、前記保持終了温度を1100℃以上1150℃以下とすることを特徴とする請求項1または請求項2に記載の貼り合わせウェーハの製造方法。
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JP2013113307A JP6086031B2 (ja) | 2013-05-29 | 2013-05-29 | 貼り合わせウェーハの製造方法 |
SG11201509256XA SG11201509256XA (en) | 2013-05-29 | 2014-03-25 | Method of manufacturing bonded wafer |
PCT/JP2014/001680 WO2014192207A1 (ja) | 2013-05-29 | 2014-03-25 | 貼り合わせウェーハの製造方法 |
KR1020157033535A KR102022504B1 (ko) | 2013-05-29 | 2014-03-25 | 접합 웨이퍼의 제조방법 |
US14/787,647 US9735045B2 (en) | 2013-05-29 | 2014-03-25 | Method of fabricating SOI wafer by ion implantation |
CN201480028918.5A CN105264641B (zh) | 2013-05-29 | 2014-03-25 | 贴合晶圆的制造方法 |
EP14804151.0A EP3007204B1 (en) | 2013-05-29 | 2014-03-25 | Method for manufacturing bonded wafer |
TW103118642A TWI549192B (zh) | 2013-05-29 | 2014-05-28 | Method of manufacturing wafers |
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JP2017126746A (ja) * | 2016-01-14 | 2017-07-20 | ソイテックSoitec | 構造の表面を平滑化するためのプロセス |
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US10985204B2 (en) * | 2016-02-16 | 2021-04-20 | G-Ray Switzerland Sa | Structures, systems and methods for electrical charge transport across bonded interfaces |
US20220048762A1 (en) * | 2020-08-14 | 2022-02-17 | Beijing Voyager Technology Co., Ltd. | Void reduction on wafer bonding interface |
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Also Published As
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KR20160013037A (ko) | 2016-02-03 |
TWI549192B (zh) | 2016-09-11 |
EP3007204A4 (en) | 2017-03-01 |
EP3007204B1 (en) | 2021-09-29 |
WO2014192207A1 (ja) | 2014-12-04 |
JP6086031B2 (ja) | 2017-03-01 |
KR102022504B1 (ko) | 2019-09-18 |
TW201445636A (zh) | 2014-12-01 |
EP3007204A1 (en) | 2016-04-13 |
US9735045B2 (en) | 2017-08-15 |
US20160079114A1 (en) | 2016-03-17 |
CN105264641A (zh) | 2016-01-20 |
CN105264641B (zh) | 2018-01-12 |
SG11201509256XA (en) | 2015-12-30 |
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