JP2014003244A5 - - Google Patents

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Publication number
JP2014003244A5
JP2014003244A5 JP2012139187A JP2012139187A JP2014003244A5 JP 2014003244 A5 JP2014003244 A5 JP 2014003244A5 JP 2012139187 A JP2012139187 A JP 2012139187A JP 2012139187 A JP2012139187 A JP 2012139187A JP 2014003244 A5 JP2014003244 A5 JP 2014003244A5
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JP
Japan
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film transistor
thin film
transistor according
manufacturing
oxide semiconductor
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JP2012139187A
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English (en)
Japanese (ja)
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JP2014003244A (ja
JP5972065B2 (ja
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Priority claimed from JP2012139187A external-priority patent/JP5972065B2/ja
Priority to JP2012139187A priority Critical patent/JP5972065B2/ja
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Priority to PCT/JP2013/065489 priority patent/WO2013190992A1/ja
Priority to KR1020147035502A priority patent/KR101634482B1/ko
Priority to TW102121005A priority patent/TWI613826B/zh
Publication of JP2014003244A publication Critical patent/JP2014003244A/ja
Priority to US14/571,293 priority patent/US9673048B2/en
Publication of JP2014003244A5 publication Critical patent/JP2014003244A5/ja
Publication of JP5972065B2 publication Critical patent/JP5972065B2/ja
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JP2012139187A 2012-06-20 2012-06-20 薄膜トランジスタの製造方法 Active JP5972065B2 (ja)

Priority Applications (5)

Application Number Priority Date Filing Date Title
JP2012139187A JP5972065B2 (ja) 2012-06-20 2012-06-20 薄膜トランジスタの製造方法
PCT/JP2013/065489 WO2013190992A1 (ja) 2012-06-20 2013-06-04 薄膜トランジスタの製造方法
KR1020147035502A KR101634482B1 (ko) 2012-06-20 2013-06-04 박막 트랜지스터의 제조 방법
TW102121005A TWI613826B (zh) 2012-06-20 2013-06-14 薄膜電晶體的製造方法、薄膜電晶體、顯示裝置、影像感測器及ｘ線感測器
US14/571,293 US9673048B2 (en) 2012-06-20 2014-12-16 Method of producing thin film transistor, thin film transistor, display device, image sensor, and X-ray sensor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2012139187A JP5972065B2 (ja) 2012-06-20 2012-06-20 薄膜トランジスタの製造方法

Publications (3)

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JP2014003244A JP2014003244A (ja) 2014-01-09
JP2014003244A5 true JP2014003244A5 (https=) 2015-01-08
JP5972065B2 JP5972065B2 (ja) 2016-08-17

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JP2012139187A Active JP5972065B2 (ja) 2012-06-20 2012-06-20 薄膜トランジスタの製造方法

Country Status (5)

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US (1) US9673048B2 (https=)
JP (1) JP5972065B2 (https=)
KR (1) KR101634482B1 (https=)
TW (1) TWI613826B (https=)
WO (1) WO2013190992A1 (https=)

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