JP2013541192A - スタガー薄膜トランジスタおよびその形成方法 - Google Patents

スタガー薄膜トランジスタおよびその形成方法 Download PDF

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Publication number
JP2013541192A
JP2013541192A JP2013526392A JP2013526392A JP2013541192A JP 2013541192 A JP2013541192 A JP 2013541192A JP 2013526392 A JP2013526392 A JP 2013526392A JP 2013526392 A JP2013526392 A JP 2013526392A JP 2013541192 A JP2013541192 A JP 2013541192A
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Prior art keywords
layer
copper
film transistor
thin film
oxide
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JP2013526392A
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Japanese (ja)
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JP2013541192A5 (OSRAM
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ファビオ ピエラリージ，
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Applied Materials Inc
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Applied Materials Inc
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Publication of JP2013541192A publication Critical patent/JP2013541192A/ja
Publication of JP2013541192A5 publication Critical patent/JP2013541192A5/ja
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/674—Thin-film transistors [TFT] characterised by the active materials
    • H10D30/6755—Oxide semiconductors, e.g. zinc oxide, copper aluminium oxide or cadmium stannate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
    • H01L23/522—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
    • H01L23/532—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body characterised by the materials
    • H01L23/53204—Conductive materials
    • H01L23/53209—Conductive materials based on metals, e.g. alloys, metal silicides
    • H01L23/53228—Conductive materials based on metals, e.g. alloys, metal silicides the principal metal being copper
    • H01L23/53238—Additional layers associated with copper layers, e.g. adhesion, barrier, cladding layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
    • H10D30/031—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6729—Thin-film transistors [TFT] characterised by the electrodes
    • H10D30/6737—Thin-film transistors [TFT] characterised by the electrodes characterised by the electrode materials
    • H10D30/6739—Conductor-insulator-semiconductor electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/60—Electrodes characterised by their materials
    • H10D64/62—Electrodes ohmically coupled to a semiconductor
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D99/00—Subject matter not provided for in other groups of this subclass
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

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  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Thin Film Transistor (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Formation Of Insulating Films (AREA)
JP2013526392A 2010-09-03 2011-08-09 スタガー薄膜トランジスタおよびその形成方法 Pending JP2013541192A (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
EP10175294.7 2010-09-03
EP10175294A EP2426720A1 (en) 2010-09-03 2010-09-03 Staggered thin film transistor and method of forming the same
PCT/EP2011/063712 WO2012028432A1 (en) 2010-09-03 2011-08-09 Staggered thin film transistor and method of forming the same

Publications (2)

Publication Number Publication Date
JP2013541192A true JP2013541192A (ja) 2013-11-07
JP2013541192A5 JP2013541192A5 (OSRAM) 2014-09-25

Family

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Family Applications (1)

Application Number Title Priority Date Filing Date
JP2013526392A Pending JP2013541192A (ja) 2010-09-03 2011-08-09 スタガー薄膜トランジスタおよびその形成方法

Country Status (7)

Country Link
US (1) US20120056173A1 (OSRAM)
EP (1) EP2426720A1 (OSRAM)
JP (1) JP2013541192A (OSRAM)
KR (1) KR20130102576A (OSRAM)
CN (1) CN103140929B (OSRAM)
TW (1) TW201232784A (OSRAM)
WO (1) WO2012028432A1 (OSRAM)

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US9601557B2 (en) 2012-11-16 2017-03-21 Apple Inc. Flexible display
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KR102163730B1 (ko) * 2014-03-25 2020-10-08 삼성전자주식회사 트랜지스터와 그 제조방법 및 트랜지스터를 포함하는 전자소자
US9600112B2 (en) 2014-10-10 2017-03-21 Apple Inc. Signal trace patterns for flexible substrates
KR102260886B1 (ko) * 2014-12-10 2021-06-07 삼성디스플레이 주식회사 박막 트랜지스터
KR102708773B1 (ko) 2016-12-26 2024-09-23 엘지디스플레이 주식회사 플렉서블 표시장치
US10224224B2 (en) 2017-03-10 2019-03-05 Micromaterials, LLC High pressure wafer processing systems and related methods
US10622214B2 (en) 2017-05-25 2020-04-14 Applied Materials, Inc. Tungsten defluorination by high pressure treatment
US10847360B2 (en) 2017-05-25 2020-11-24 Applied Materials, Inc. High pressure treatment of silicon nitride film
CN110678973B (zh) 2017-06-02 2023-09-19 应用材料公司 碳化硼硬掩模的干式剥除
WO2019036157A1 (en) 2017-08-18 2019-02-21 Applied Materials, Inc. HIGH PRESSURE AND HIGH TEMPERATURE RECOVERY CHAMBER
US10276411B2 (en) 2017-08-18 2019-04-30 Applied Materials, Inc. High pressure and high temperature anneal chamber
SG11202001450UA (en) 2017-09-12 2020-03-30 Applied Materials Inc Apparatus and methods for manufacturing semiconductor structures using protective barrier layer
US10643867B2 (en) 2017-11-03 2020-05-05 Applied Materials, Inc. Annealing system and method
EP4321649B1 (en) 2017-11-11 2025-08-20 Micromaterials LLC Gas delivery system for high pressure processing chamber
WO2019099125A1 (en) 2017-11-16 2019-05-23 Applied Materials, Inc. High pressure steam anneal processing apparatus
WO2019099255A2 (en) 2017-11-17 2019-05-23 Applied Materials, Inc. Condenser system for high pressure processing system
JP7299898B2 (ja) 2018-01-24 2023-06-28 アプライド マテリアルズ インコーポレイテッド 高圧アニールを用いたシーム修復
EP3762962A4 (en) 2018-03-09 2021-12-08 Applied Materials, Inc. HIGH PRESSURE ANNEALING PROCESS FOR METAL-BASED MATERIALS
US10714331B2 (en) 2018-04-04 2020-07-14 Applied Materials, Inc. Method to fabricate thermally stable low K-FinFET spacer
US10950429B2 (en) 2018-05-08 2021-03-16 Applied Materials, Inc. Methods of forming amorphous carbon hard mask layers and hard mask layers formed therefrom
US10566188B2 (en) 2018-05-17 2020-02-18 Applied Materials, Inc. Method to improve film stability
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Also Published As

Publication number Publication date
TW201232784A (en) 2012-08-01
KR20130102576A (ko) 2013-09-17
CN103140929B (zh) 2015-12-02
WO2012028432A1 (en) 2012-03-08
EP2426720A1 (en) 2012-03-07
US20120056173A1 (en) 2012-03-08
CN103140929A (zh) 2013-06-05

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