JP2013508981A - 超高密度パワートレンチｍｏｓｆｅｔ - Google Patents

超高密度パワートレンチｍｏｓｆｅｔ Download PDF

Info

Publication number
JP2013508981A
JP2013508981A JP2012535349A JP2012535349A JP2013508981A JP 2013508981 A JP2013508981 A JP 2013508981A JP 2012535349 A JP2012535349 A JP 2012535349A JP 2012535349 A JP2012535349 A JP 2012535349A JP 2013508981 A JP2013508981 A JP 2013508981A
Authority
JP
Japan
Prior art keywords
polysilicon
gate
trench
dielectric material
region
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2012535349A
Other languages
English (en)
Japanese (ja)
Other versions
JP2013508981A5 (https=
Inventor
キュー． シュウ ロバート
チェン クオ−イン
リッチテンベルガー カール
シー シャロン
チェン クフェイ
テリル カイル
Original Assignee
ヴィシェイ−シリコニックス
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by ヴィシェイ−シリコニックス filed Critical ヴィシェイ−シリコニックス
Publication of JP2013508981A publication Critical patent/JP2013508981A/ja
Publication of JP2013508981A5 publication Critical patent/JP2013508981A5/ja
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
    • H10D30/028—Manufacture or treatment of FETs having insulated gates [IGFET] of double-diffused metal oxide semiconductor [DMOS] FETs
    • H10D30/0291—Manufacture or treatment of FETs having insulated gates [IGFET] of double-diffused metal oxide semiconductor [DMOS] FETs of vertical DMOS [VDMOS] FETs
    • H10D30/0297—Manufacture or treatment of FETs having insulated gates [IGFET] of double-diffused metal oxide semiconductor [DMOS] FETs of vertical DMOS [VDMOS] FETs using recessing of the gate electrodes, e.g. to form trench gate electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/64—Double-diffused metal-oxide semiconductor [DMOS] FETs
    • H10D30/66—Vertical DMOS [VDMOS] FETs
    • H10D30/665—Vertical DMOS [VDMOS] FETs having edge termination structures
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/64—Double-diffused metal-oxide semiconductor [DMOS] FETs
    • H10D30/66—Vertical DMOS [VDMOS] FETs
    • H10D30/668—Vertical DMOS [VDMOS] FETs having trench gate electrodes, e.g. UMOS transistors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/102—Constructional design considerations for preventing surface leakage or controlling electric field concentration
    • H10D62/112—Constructional design considerations for preventing surface leakage or controlling electric field concentration for preventing surface leakage due to surface inversion layers, e.g. by using channel stoppers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/111—Field plates
    • H10D64/117—Recessed field plates, e.g. trench field plates or buried field plates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/20—Electrodes characterised by their shapes, relative sizes or dispositions 
    • H10D64/27—Electrodes not carrying the current to be rectified, amplified, oscillated or switched, e.g. gates
    • H10D64/311—Gate electrodes for field-effect devices
    • H10D64/411—Gate electrodes for field-effect devices for FETs
    • H10D64/511—Gate electrodes for field-effect devices for FETs for IGFETs
    • H10D64/514—Gate electrodes for field-effect devices for FETs for IGFETs characterised by the insulating layers
    • H10D64/516—Gate electrodes for field-effect devices for FETs for IGFETs characterised by the insulating layers the thicknesses being non-uniform
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P30/00—Ion implantation into wafers, substrates or parts of devices
    • H10P30/20—Ion implantation into wafers, substrates or parts of devices into semiconductor materials, e.g. for doping
    • H10P30/222—Ion implantation into wafers, substrates or parts of devices into semiconductor materials, e.g. for doping characterised by the angle between the ion beam and the crystal planes or the main crystal surface

Landscapes

  • Electrodes Of Semiconductors (AREA)
  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
JP2012535349A 2009-10-20 2010-10-20 超高密度パワートレンチｍｏｓｆｅｔ Pending JP2013508981A (ja)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
US25346409P 2009-10-20 2009-10-20
US61/253,464 2009-10-20
US12/788,158 US9431530B2 (en) 2009-10-20 2010-05-26 Super-high density trench MOSFET
US12/788,158 2010-05-26
PCT/US2010/053454 WO2011050116A2 (en) 2009-10-20 2010-10-20 Super-high density power trench mosfet

Publications (2)

Publication Number Publication Date
JP2013508981A true JP2013508981A (ja) 2013-03-07
JP2013508981A5 JP2013508981A5 (https=) 2013-11-07

Family

ID=43878637

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2012535349A Pending JP2013508981A (ja) 2009-10-20 2010-10-20 超高密度パワートレンチｍｏｓｆｅｔ

Country Status (6)

Country Link
US (1) US9431530B2 (https=)
EP (1) EP2491581A4 (https=)
JP (1) JP2013508981A (https=)
KR (2) KR101869323B1 (https=)
CN (1) CN102770947B (https=)
WO (1) WO2011050116A2 (https=)

Families Citing this family (22)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9437729B2 (en) * 2007-01-08 2016-09-06 Vishay-Siliconix High-density power MOSFET with planarized metalization
US9947770B2 (en) * 2007-04-03 2018-04-17 Vishay-Siliconix Self-aligned trench MOSFET and method of manufacture
US9484451B2 (en) 2007-10-05 2016-11-01 Vishay-Siliconix MOSFET active area and edge termination area charge balance
US9443974B2 (en) 2009-08-27 2016-09-13 Vishay-Siliconix Super junction trench power MOSFET device fabrication
US9425306B2 (en) 2009-08-27 2016-08-23 Vishay-Siliconix Super junction trench power MOSFET devices
US9431249B2 (en) 2011-12-01 2016-08-30 Vishay-Siliconix Edge termination for super junction MOSFET devices
US9614043B2 (en) * 2012-02-09 2017-04-04 Vishay-Siliconix MOSFET termination trench
US9842911B2 (en) 2012-05-30 2017-12-12 Vishay-Siliconix Adaptive charge balanced edge termination
US9722041B2 (en) * 2012-09-19 2017-08-01 Vishay-Siliconix Breakdown voltage blocking device
US9343579B2 (en) * 2013-05-20 2016-05-17 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
US9006063B2 (en) * 2013-06-28 2015-04-14 Stmicroelectronics S.R.L. Trench MOSFET
KR20150011185A (ko) 2013-07-22 2015-01-30 삼성전자주식회사 반도체 장치 및 그 제조 방법
DE102014005879B4 (de) * 2014-04-16 2021-12-16 Infineon Technologies Ag Vertikale Halbleitervorrichtung
US9508596B2 (en) 2014-06-20 2016-11-29 Vishay-Siliconix Processes used in fabricating a metal-insulator-semiconductor field effect transistor
US9887259B2 (en) 2014-06-23 2018-02-06 Vishay-Siliconix Modulated super junction power MOSFET devices
EP4565029A3 (en) 2014-08-19 2025-07-30 Vishay-Siliconix Mosfet semiconductor device
KR102098996B1 (ko) 2014-08-19 2020-04-08 비쉐이-실리코닉스 초접합 금속 산화물 반도체 전계 효과 트랜지스터
US9431551B2 (en) * 2014-09-15 2016-08-30 Infineon Technologies Ag Circuit arrangement and method of forming a circuit arrangement
CN105870015B (zh) * 2015-01-21 2018-12-28 北大方正集团有限公司 功率器件的制备方法和功率器件
CN107507773B (zh) * 2016-06-14 2021-09-17 格科微电子（上海）有限公司 优化cmos图像传感器晶体管结构的方法
JP6844228B2 (ja) * 2016-12-02 2021-03-17 富士電機株式会社 半導体装置および半導体装置の製造方法
US20220149165A1 (en) * 2020-11-12 2022-05-12 Cree, Inc. Semiconductor devices including an offset metal to polysilicon gate contact

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2003303967A (ja) * 2002-04-09 2003-10-24 Shindengen Electric Mfg Co Ltd 半導体装置およびその製造方法
JP2005268679A (ja) * 2004-03-22 2005-09-29 Matsushita Electric Ind Co Ltd 半導体装置およびその製造方法
JP2007027561A (ja) * 2005-07-20 2007-02-01 Toshiba Corp 電力用半導体装置
JP2009004411A (ja) * 2007-06-19 2009-01-08 Rohm Co Ltd 半導体装置
JP2009522807A (ja) * 2006-01-05 2009-06-11 フェアチャイルド・セミコンダクター・コーポレーション 化学的機械式平坦化を利用したパワーデバイス

Family Cites Families (136)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3906540A (en) * 1973-04-02 1975-09-16 Nat Semiconductor Corp Metal-silicide Schottky diode employing an aluminum connector
JPH0612828B2 (ja) 1983-06-30 1994-02-16 株式会社東芝 半導体装置
US4641174A (en) 1983-08-08 1987-02-03 General Electric Company Pinch rectifier
US4672407A (en) * 1984-05-30 1987-06-09 Kabushiki Kaisha Toshiba Conductivity modulated MOSFET
JPS6292361A (ja) 1985-10-17 1987-04-27 Toshiba Corp 相補型半導体装置
JPH0693512B2 (ja) * 1986-06-17 1994-11-16 日産自動車株式会社 縦形ｍｏｓｆｅｔ
JPH0685441B2 (ja) 1986-06-18 1994-10-26 日産自動車株式会社 半導体装置
US4799095A (en) 1987-07-06 1989-01-17 General Electric Company Metal oxide semiconductor gated turn off thyristor
US5021840A (en) * 1987-08-18 1991-06-04 Texas Instruments Incorporated Schottky or PN diode with composite sidewall
US4827321A (en) * 1987-10-29 1989-05-02 General Electric Company Metal oxide semiconductor gated turn off thyristor including a schottky contact
US20020074585A1 (en) 1988-05-17 2002-06-20 Advanced Power Technology, Inc., Delaware Corporation Self-aligned power MOSFET with enhanced base region
US5283201A (en) 1988-05-17 1994-02-01 Advanced Power Technology, Inc. High density power device fabrication process
US4969027A (en) 1988-07-18 1990-11-06 General Electric Company Power bipolar transistor device with integral antisaturation diode
US4967243A (en) * 1988-07-19 1990-10-30 General Electric Company Power transistor structure with high speed integral antiparallel Schottky diode
EP0354449A3 (en) 1988-08-08 1991-01-02 Seiko Epson Corporation Semiconductor single crystal substrate
US5055896A (en) 1988-12-15 1991-10-08 Siliconix Incorporated Self-aligned LDD lateral DMOS transistor with high-voltage interconnect capability
US5072266A (en) * 1988-12-27 1991-12-10 Siliconix Incorporated Trench DMOS power transistor with field-shaping body profile and three-dimensional geometry
US4939557A (en) 1989-02-15 1990-07-03 Varian Associates, Inc. (110) GaAs microwave FET
US5111253A (en) * 1989-05-09 1992-05-05 General Electric Company Multicellular FET having a Schottky diode merged therewith
EP0438700A1 (de) 1990-01-25 1991-07-31 Asea Brown Boveri Ag Abschaltbares, MOS-gesteuertes Leistungshalbleiter-Bauelement sowie Verfahren zu dessen Herstellung
JP2692350B2 (ja) * 1990-04-02 1997-12-17 富士電機株式会社 Ｍｏｓ型半導体素子
FR2668465B1 (fr) 1990-10-30 1993-04-16 Inst Francais Du Petrole Procede d'elimination de mercure ou d'arsenic dans un fluide en presence d'une masse de captation de mercure et/ou d'arsenic.
US5168331A (en) * 1991-01-31 1992-12-01 Siliconix Incorporated Power metal-oxide-semiconductor field effect transistor
JPH04291767A (ja) * 1991-03-20 1992-10-15 Fuji Electric Co Ltd 伝導度変調型ｍｏｓｆｅｔ
JP3131239B2 (ja) 1991-04-25 2001-01-31 キヤノン株式会社 半導体回路装置用配線および半導体回路装置
JP3156300B2 (ja) * 1991-10-07 2001-04-16 株式会社デンソー 縦型半導体装置
US5366914A (en) 1992-01-29 1994-11-22 Nec Corporation Vertical power MOSFET structure having reduced cell area
JPH05315620A (ja) 1992-05-08 1993-11-26 Rohm Co Ltd 半導体装置およびその製造法
US5233215A (en) * 1992-06-08 1993-08-03 North Carolina State University At Raleigh Silicon carbide power MOSFET with floating field ring and floating field plate
JP2837033B2 (ja) 1992-07-21 1998-12-14 三菱電機株式会社 半導体装置及びその製造方法
GB9215653D0 (en) 1992-07-23 1992-09-09 Philips Electronics Uk Ltd A method of manufacturing a semiconductor device comprising an insulated gate field effect device
GB9216599D0 (en) 1992-08-05 1992-09-16 Philips Electronics Uk Ltd A semiconductor device comprising a vertical insulated gate field effect device and a method of manufacturing such a device
GB9306895D0 (en) 1993-04-01 1993-05-26 Philips Electronics Uk Ltd A method of manufacturing a semiconductor device comprising an insulated gate field effect device
US5430315A (en) * 1993-07-22 1995-07-04 Rumennik; Vladimir Bi-directional power trench MOS field effect transistor having low on-state resistance and low leakage current
JP3383377B2 (ja) * 1993-10-28 2003-03-04 株式会社東芝 トレンチ構造の縦型のノーマリーオン型のパワーｍｏｓｆｅｔおよびその製造方法
JP3334290B2 (ja) * 1993-11-12 2002-10-15 株式会社デンソー 半導体装置
JPH07176745A (ja) 1993-12-17 1995-07-14 Semiconductor Energy Lab Co Ltd 半導体素子
US5597765A (en) * 1995-01-10 1997-01-28 Siliconix Incorporated Method for making termination structure for power MOSFET
US5567634A (en) 1995-05-01 1996-10-22 National Semiconductor Corporation Method of fabricating self-aligned contact trench DMOS transistors
US6140678A (en) * 1995-06-02 2000-10-31 Siliconix Incorporated Trench-gated power MOSFET with protective diode
JP2988871B2 (ja) 1995-06-02 1999-12-13 シリコニックス・インコーポレイテッド トレンチゲートパワーｍｏｓｆｅｔ
DE69631995T2 (de) * 1995-06-02 2005-02-10 Siliconix Inc., Santa Clara Bidirektional sperrender Graben-Leistungs-MOSFET
US6049108A (en) * 1995-06-02 2000-04-11 Siliconix Incorporated Trench-gated MOSFET with bidirectional voltage clamping
US6204533B1 (en) * 1995-06-02 2001-03-20 Siliconix Incorporated Vertical trench-gated power MOSFET having stripe geometry and high cell density
US5998837A (en) * 1995-06-02 1999-12-07 Siliconix Incorporated Trench-gated power MOSFET with protective diode having adjustable breakdown voltage
US5689128A (en) * 1995-08-21 1997-11-18 Siliconix Incorporated High density trenched DMOS transistor
US5814858A (en) * 1996-03-15 1998-09-29 Siliconix Incorporated Vertical power MOSFET having reduced sensitivity to variations in thickness of epitaxial layer
JPH09260645A (ja) 1996-03-19 1997-10-03 Sanyo Electric Co Ltd 半導体装置
US5770878A (en) * 1996-04-10 1998-06-23 Harris Corporation Trench MOS gate device
US5808340A (en) * 1996-09-18 1998-09-15 Advanced Micro Devices, Inc. Short channel self aligned VMOS field effect transistor
US7269034B2 (en) * 1997-01-24 2007-09-11 Synqor, Inc. High efficiency power converter
JP3173405B2 (ja) 1997-01-31 2001-06-04 日本電気株式会社 半導体装置の製造方法
US5952695A (en) * 1997-03-05 1999-09-14 International Business Machines Corporation Silicon-on-insulator and CMOS-on-SOI double film structures
JP3545590B2 (ja) 1997-03-14 2004-07-21 株式会社東芝 半導体装置
US6180966B1 (en) 1997-03-25 2001-01-30 Hitachi, Ltd. Trench gate type semiconductor device with current sensing cell
US6172398B1 (en) * 1997-08-11 2001-01-09 Magepower Semiconductor Corp. Trenched DMOS device provided with body-dopant redistribution-compensation region for preventing punch through and adjusting threshold voltage
JP3502531B2 (ja) 1997-08-28 2004-03-02 株式会社ルネサステクノロジ 半導体装置の製造方法
JPH11145457A (ja) * 1997-11-07 1999-05-28 Nec Corp 縦型電界効果トランジスタ
US6268242B1 (en) 1997-12-31 2001-07-31 Richard K. Williams Method of forming vertical mosfet device having voltage clamped gate and self-aligned contact
JP3705919B2 (ja) 1998-03-05 2005-10-12 三菱電機株式会社 半導体装置及びその製造方法
US6939776B2 (en) * 1998-09-29 2005-09-06 Sanyo Electric Co., Ltd. Semiconductor device and a method of fabricating the same
US6621121B2 (en) * 1998-10-26 2003-09-16 Silicon Semiconductor Corporation Vertical MOSFETs having trench-based gate electrodes within deeper trench-based source electrodes
US7578923B2 (en) 1998-12-01 2009-08-25 Novellus Systems, Inc. Electropolishing system and process
JP3743189B2 (ja) 1999-01-27 2006-02-08 富士通株式会社 不揮発性半導体記憶装置及びその製造方法
US6351009B1 (en) * 1999-03-01 2002-02-26 Fairchild Semiconductor Corporation MOS-gated device having a buried gate and process for forming same
US6277695B1 (en) 1999-04-16 2001-08-21 Siliconix Incorporated Method of forming vertical planar DMOSFET with self-aligned contact
US6413822B2 (en) 1999-04-22 2002-07-02 Advanced Analogic Technologies, Inc. Super-self-aligned fabrication process of trench-gate DMOS with overlying device layer
US6238981B1 (en) * 1999-05-10 2001-05-29 Intersil Corporation Process for forming MOS-gated devices having self-aligned trenches
GB9917099D0 (en) 1999-07-22 1999-09-22 Koninkl Philips Electronics Nv Cellular trench-gate field-effect transistors
US6483171B1 (en) 1999-08-13 2002-11-19 Micron Technology, Inc. Vertical sub-micron CMOS transistors on (110), (111), (311), (511), and higher order surfaces of bulk, SOI and thin film structures and method of forming same
US6211018B1 (en) 1999-08-14 2001-04-03 Electronics And Telecommunications Research Institute Method for fabricating high density trench gate type power device
US6245615B1 (en) 1999-08-31 2001-06-12 Micron Technology, Inc. Method and apparatus on (110) surfaces of silicon structures with conduction in the <110> direction
US6348712B1 (en) * 1999-10-27 2002-02-19 Siliconix Incorporated High density trench-gated power MOSFET
GB9928285D0 (en) 1999-11-30 2000-01-26 Koninkl Philips Electronics Nv Manufacture of trench-gate semiconductor devices
US6285060B1 (en) * 1999-12-30 2001-09-04 Siliconix Incorporated Barrier accumulation-mode MOSFET
US6580123B2 (en) * 2000-04-04 2003-06-17 International Rectifier Corporation Low voltage power MOSFET device and process for its manufacture
US6472678B1 (en) 2000-06-16 2002-10-29 General Semiconductor, Inc. Trench MOSFET with double-diffused body profile
US6784486B2 (en) 2000-06-23 2004-08-31 Silicon Semiconductor Corporation Vertical power devices having retrograded-doped transition regions therein
JP2002016080A (ja) 2000-06-28 2002-01-18 Toshiba Corp トレンチゲート型ｍｏｓｆｅｔの製造方法
JP4528460B2 (ja) 2000-06-30 2010-08-18 株式会社東芝 半導体素子
US6700158B1 (en) 2000-08-18 2004-03-02 Fairchild Semiconductor Corporation Trench corner protection for trench MOSFET
JP2002110978A (ja) 2000-10-02 2002-04-12 Toshiba Corp 電力用半導体素子
US6509233B2 (en) * 2000-10-13 2003-01-21 Siliconix Incorporated Method of making trench-gated MOSFET having cesium gate oxide layer
JP2002222950A (ja) 2001-01-25 2002-08-09 Denso Corp 炭化珪素半導体装置の製造方法
US6710403B2 (en) 2002-07-30 2004-03-23 Fairchild Semiconductor Corporation Dual trench power MOSFET
JP3531613B2 (ja) 2001-02-06 2004-05-31 株式会社デンソー トレンチゲート型半導体装置及びその製造方法
JP2002280553A (ja) * 2001-03-19 2002-09-27 Toshiba Corp 半導体装置及びその製造方法
EP1267415A3 (en) 2001-06-11 2009-04-15 Kabushiki Kaisha Toshiba Power semiconductor device having resurf layer
JP2003030396A (ja) 2001-07-13 2003-01-31 Nec Corp 委託作業管理システム、方法およびプログラム
GB0118000D0 (en) 2001-07-24 2001-09-19 Koninkl Philips Electronics Nv Manufacture of semiconductor devices with schottky barriers
US6882000B2 (en) 2001-08-10 2005-04-19 Siliconix Incorporated Trench MIS device with reduced gate-to-drain capacitance
US6489204B1 (en) * 2001-08-20 2002-12-03 Episil Technologies, Inc. Save MOS device
US7045859B2 (en) * 2001-09-05 2006-05-16 International Rectifier Corporation Trench fet with self aligned source and contact
CN1331238C (zh) * 2001-09-19 2007-08-08 株式会社东芝 半导体装置及其制造方法
JP2003115587A (ja) 2001-10-03 2003-04-18 Tadahiro Omi ＜１１０＞方位のシリコン表面上に形成された半導体装置およびその製造方法
KR100406180B1 (ko) 2001-12-22 2003-11-17 주식회사 하이닉스반도체 플래쉬 메모리 셀의 제조 방법
JP4004843B2 (ja) * 2002-04-24 2007-11-07 Ｎｅｃエレクトロニクス株式会社 縦型ｍｏｓｆｅｔの製造方法
JP3652322B2 (ja) 2002-04-30 2005-05-25 Ｎｅｃエレクトロニクス株式会社 縦型ｍｏｓｆｅｔとその製造方法
JP3640945B2 (ja) * 2002-09-02 2005-04-20 株式会社東芝 トレンチゲート型半導体装置及びその製造方法
US8080459B2 (en) 2002-09-24 2011-12-20 Vishay-Siliconix Self aligned contact in a semiconductor device and method of fabricating the same
JP3931138B2 (ja) 2002-12-25 2007-06-13 三菱電機株式会社 電力用半導体装置及び電力用半導体装置の製造方法
US6861701B2 (en) * 2003-03-05 2005-03-01 Advanced Analogic Technologies, Inc. Trench power MOSFET with planarized gate bus
US7638841B2 (en) 2003-05-20 2009-12-29 Fairchild Semiconductor Corporation Power semiconductor devices and methods of manufacture
JP2004356114A (ja) 2003-05-26 2004-12-16 Tadahiro Omi Ｐチャネルパワーｍｉｓ電界効果トランジスタおよびスイッチング回路
US6987305B2 (en) 2003-08-04 2006-01-17 International Rectifier Corporation Integrated FET and schottky device
US7022578B2 (en) 2003-10-09 2006-04-04 Chartered Semiconductor Manufacturing Ltd. Heterojunction bipolar transistor using reverse emitter window
JP4470454B2 (ja) 2003-11-04 2010-06-02 株式会社豊田中央研究所 半導体装置とその製造方法
JP4913336B2 (ja) * 2004-09-28 2012-04-11 ルネサスエレクトロニクス株式会社 半導体装置
JP4841829B2 (ja) 2004-11-17 2011-12-21 ルネサスエレクトロニクス株式会社 半導体装置及びその製造方法
US20060108635A1 (en) 2004-11-23 2006-05-25 Alpha Omega Semiconductor Limited Trenched MOSFETS with part of the device formed on a (110) crystal plane
DE102004057237B4 (de) 2004-11-26 2007-02-08 Infineon Technologies Ag Verfahren zum Herstellen von Kontaktlöchern in einem Halbleiterkörper sowie Transistor mit vertikalem Aufbau
US20060113588A1 (en) * 2004-11-29 2006-06-01 Sillicon-Based Technology Corp. Self-aligned trench-type DMOS transistor structure and its manufacturing methods
US7439583B2 (en) 2004-12-27 2008-10-21 Third Dimension (3D) Semiconductor, Inc. Tungsten plug drain extension
DE112006000832B4 (de) * 2005-04-06 2018-09-27 Fairchild Semiconductor Corporation Trenched-Gate-Feldeffekttransistoren und Verfahren zum Bilden derselben
DE112005003584B4 (de) 2005-05-24 2011-06-16 Vishay-Siliconix, Santa Clara Verfahren zum Herstellen eines Trench-Metalloxid-Halbleiter-Feldeffekttransistors
US7592650B2 (en) * 2005-06-06 2009-09-22 M-Mos Semiconductor Sdn. Bhd. High density hybrid MOSFET device
US7648877B2 (en) * 2005-06-24 2010-01-19 Fairchild Semiconductor Corporation Structure and method for forming laterally extending dielectric layer in a trench-gate FET
TWI400757B (zh) 2005-06-29 2013-07-01 快捷半導體公司 形成遮蔽閘極場效應電晶體之方法
JP2007012977A (ja) 2005-07-01 2007-01-18 Toshiba Corp 半導体装置
JP2007027193A (ja) 2005-07-12 2007-02-01 Renesas Technology Corp 半導体装置およびその製造方法、ならびに非絶縁型ｄｃ／ｄｃコンバータ
JP2007035841A (ja) * 2005-07-26 2007-02-08 Toshiba Corp 半導体装置
JP5222466B2 (ja) 2006-08-09 2013-06-26 ルネサスエレクトロニクス株式会社 半導体装置およびその製造方法
US9437729B2 (en) * 2007-01-08 2016-09-06 Vishay-Siliconix High-density power MOSFET with planarized metalization
US8344451B2 (en) * 2007-01-09 2013-01-01 Maxpower Semiconductor, Inc. Semiconductor device
US9947770B2 (en) * 2007-04-03 2018-04-17 Vishay-Siliconix Self-aligned trench MOSFET and method of manufacture
WO2008156071A1 (ja) * 2007-06-19 2008-12-24 Rohm Co., Ltd. 半導体装置
JP4748149B2 (ja) 2007-12-24 2011-08-17 株式会社デンソー 半導体装置
US7825431B2 (en) * 2007-12-31 2010-11-02 Alpha & Omega Semicondictor, Ltd. Reduced mask configuration for power MOSFETs with electrostatic discharge (ESD) circuit protection
US8642459B2 (en) 2008-08-28 2014-02-04 Infineon Technologies Ag Method for forming a semiconductor device with an isolation region on a gate electrode
US8039877B2 (en) 2008-09-09 2011-10-18 Fairchild Semiconductor Corporation (110)-oriented p-channel trench MOSFET having high-K gate dielectric
US7910486B2 (en) * 2009-06-12 2011-03-22 Alpha & Omega Semiconductor, Inc. Method for forming nanotube semiconductor devices
US9425306B2 (en) 2009-08-27 2016-08-23 Vishay-Siliconix Super junction trench power MOSFET devices
US9443974B2 (en) 2009-08-27 2016-09-13 Vishay-Siliconix Super junction trench power MOSFET device fabrication
US8362550B2 (en) 2011-01-20 2013-01-29 Fairchild Semiconductor Corporation Trench power MOSFET with reduced on-resistance
US8466513B2 (en) 2011-06-13 2013-06-18 Semiconductor Components Industries, Llc Semiconductor device with enhanced mobility and method
US8633539B2 (en) 2011-06-27 2014-01-21 Infineon Technologies Austria Ag Trench transistor and manufacturing method of the trench transistor

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2003303967A (ja) * 2002-04-09 2003-10-24 Shindengen Electric Mfg Co Ltd 半導体装置およびその製造方法
JP2005268679A (ja) * 2004-03-22 2005-09-29 Matsushita Electric Ind Co Ltd 半導体装置およびその製造方法
JP2007027561A (ja) * 2005-07-20 2007-02-01 Toshiba Corp 電力用半導体装置
JP2009522807A (ja) * 2006-01-05 2009-06-11 フェアチャイルド・セミコンダクター・コーポレーション 化学的機械式平坦化を利用したパワーデバイス
JP2009004411A (ja) * 2007-06-19 2009-01-08 Rohm Co Ltd 半導体装置

Also Published As

Publication number Publication date
US9431530B2 (en) 2016-08-30
KR20160111548A (ko) 2016-09-26
EP2491581A4 (en) 2014-04-09
CN102770947B (zh) 2015-07-01
KR20120086700A (ko) 2012-08-03
WO2011050116A2 (en) 2011-04-28
KR101869323B1 (ko) 2018-06-20
US20110089486A1 (en) 2011-04-21
EP2491581A2 (en) 2012-08-29
WO2011050116A3 (en) 2011-08-04
CN102770947A (zh) 2012-11-07

Similar Documents

Publication Publication Date Title
JP2013508981A (ja) 超高密度パワートレンチｍｏｓｆｅｔ
US8525255B2 (en) Trench MOSFET with trenched floating gates having thick trench bottom oxide as termination
JP5551213B2 (ja) 半導体装置の製造方法
CN102034712B (zh) 三掩膜形成屏蔽栅极沟槽场效应晶体管的方法及器件
JP5511308B2 (ja) 半導体装置およびその製造方法
TWI459476B (zh) 具有厚底部屏蔽氧化物的溝槽雙擴散金屬氧化物半導體裝置的製備
KR20150117516A (ko) 반도체 소자 형성 방법
US20080035993A1 (en) Termination design for deep source electrode MOSFET
JP2008098593A (ja) 半導体装置及びその製造方法
CN104821333A (zh) 用于沟槽金属氧化物半导体场效应晶体管(mosfet)中的低米勒电容的较厚的底部氧化物
CN108511526A (zh) 有带对准栅电极的垂直晶体管的半导体器件及其制造方法
CN115832019A (zh) 用于沟槽栅极场效应晶体管的场板布置
JP2008533705A (ja) 高電圧コンポーネントを備えた、トレンチ絶縁されたｓｏｉ集積回路へのキャリア基板コンタクトの作製
US8492221B2 (en) Method for fabricating power semiconductor device with super junction structure
US8470702B2 (en) Semiconductor device and method for forming the same
TWI802305B (zh) 半導體結構以及埋入式場板結構的製造方法
US8455946B2 (en) Lateral stack-type super junction power semiconductor device
US8759910B2 (en) Trench MOSFET with trenched floating gates having thick trench bottom oxide as termination
US8536646B2 (en) Trench type power transistor device
CN102751327A (zh) 功率装置的耐压终止结构
CN116033740B (zh) 半导体结构及其制造方法
US20080214004A1 (en) Method for manufacturing a semiconductor device and semiconductor device
US20090026536A1 (en) Trench gate semiconductor device and method for fabricating the same
TWI389302B (zh) 溝渠式半導體元件之結構
CN103165463B (zh) 半导体装置的制造方法

Legal Events

Date Code Title Description
A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20130920

A621 Written request for application examination

Free format text: JAPANESE INTERMEDIATE CODE: A621

Effective date: 20130920

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20131128

A977 Report on retrieval

Free format text: JAPANESE INTERMEDIATE CODE: A971007

Effective date: 20140430

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20140501

A601 Written request for extension of time

Free format text: JAPANESE INTERMEDIATE CODE: A601

Effective date: 20140730

A602 Written permission of extension of time

Free format text: JAPANESE INTERMEDIATE CODE: A602

Effective date: 20140806

A601 Written request for extension of time

Free format text: JAPANESE INTERMEDIATE CODE: A601

Effective date: 20140828

A602 Written permission of extension of time

Free format text: JAPANESE INTERMEDIATE CODE: A602

Effective date: 20140904

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20140930

A02 Decision of refusal

Free format text: JAPANESE INTERMEDIATE CODE: A02

Effective date: 20141107