KR101869323B1 - 초고밀도 전력 트렌치 mosfet - Google Patents

초고밀도 전력 트렌치 mosfet Download PDF

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Publication number
KR101869323B1
KR101869323B1 KR1020167025520A KR20167025520A KR101869323B1 KR 101869323 B1 KR101869323 B1 KR 101869323B1 KR 1020167025520 A KR1020167025520 A KR 1020167025520A KR 20167025520 A KR20167025520 A KR 20167025520A KR 101869323 B1 KR101869323 B1 KR 101869323B1
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South Korea
Prior art keywords
gate
polysilicon
trench
mosfet
dielectric material
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Korean (ko)
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KR20160111548A (ko
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로벌트 큐. 엑스유
큐오-인 첸
칼 니치텐벌젤
샤론 쉬
큐페이 첸
키레 털린
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비쉐이-실리코닉스
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
    • H10D30/028—Manufacture or treatment of FETs having insulated gates [IGFET] of double-diffused metal oxide semiconductor [DMOS] FETs
    • H10D30/0291—Manufacture or treatment of FETs having insulated gates [IGFET] of double-diffused metal oxide semiconductor [DMOS] FETs of vertical DMOS [VDMOS] FETs
    • H10D30/0297—Manufacture or treatment of FETs having insulated gates [IGFET] of double-diffused metal oxide semiconductor [DMOS] FETs of vertical DMOS [VDMOS] FETs using recessing of the gate electrodes, e.g. to form trench gate electrodes
    • H01L29/66734—
    • H01L21/26586—
    • H01L29/0638—
    • H01L29/407—
    • H01L29/42368—
    • H01L29/7811—
    • H01L29/7813—
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/64—Double-diffused metal-oxide semiconductor [DMOS] FETs
    • H10D30/66—Vertical DMOS [VDMOS] FETs
    • H10D30/665—Vertical DMOS [VDMOS] FETs having edge termination structures
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/64—Double-diffused metal-oxide semiconductor [DMOS] FETs
    • H10D30/66—Vertical DMOS [VDMOS] FETs
    • H10D30/668—Vertical DMOS [VDMOS] FETs having trench gate electrodes, e.g. UMOS transistors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/102—Constructional design considerations for preventing surface leakage or controlling electric field concentration
    • H10D62/112—Constructional design considerations for preventing surface leakage or controlling electric field concentration for preventing surface leakage due to surface inversion layers, e.g. by using channel stoppers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/111—Field plates
    • H10D64/117—Recessed field plates, e.g. trench field plates or buried field plates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/20—Electrodes characterised by their shapes, relative sizes or dispositions 
    • H10D64/27—Electrodes not carrying the current to be rectified, amplified, oscillated or switched, e.g. gates
    • H10D64/311—Gate electrodes for field-effect devices
    • H10D64/411—Gate electrodes for field-effect devices for FETs
    • H10D64/511—Gate electrodes for field-effect devices for FETs for IGFETs
    • H10D64/514—Gate electrodes for field-effect devices for FETs for IGFETs characterised by the insulating layers
    • H10D64/516—Gate electrodes for field-effect devices for FETs for IGFETs characterised by the insulating layers the thicknesses being non-uniform
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P30/00—Ion implantation into wafers, substrates or parts of devices
    • H10P30/20—Ion implantation into wafers, substrates or parts of devices into semiconductor materials, e.g. for doping
    • H10P30/222—Ion implantation into wafers, substrates or parts of devices into semiconductor materials, e.g. for doping characterised by the angle between the ion beam and the crystal planes or the main crystal surface

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  • Electrodes Of Semiconductors (AREA)
  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
KR1020167025520A 2009-10-20 2010-10-20 초고밀도 전력 트렌치 mosfet Active KR101869323B1 (ko)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
US25346409P 2009-10-20 2009-10-20
US61/253,464 2009-10-20
US12/788,158 US9431530B2 (en) 2009-10-20 2010-05-26 Super-high density trench MOSFET
US12/788,158 2010-05-26
PCT/US2010/053454 WO2011050116A2 (en) 2009-10-20 2010-10-20 Super-high density power trench mosfet

Related Parent Applications (1)

Application Number Title Priority Date Filing Date
KR1020127009939A Division KR20120086700A (ko) 2009-10-20 2010-10-20 초고밀도 전력 트렌치 ｍｏｓｆｅｔ

Publications (2)

Publication Number Publication Date
KR20160111548A KR20160111548A (ko) 2016-09-26
KR101869323B1 true KR101869323B1 (ko) 2018-06-20

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Family Applications (2)

Application Number Title Priority Date Filing Date
KR1020167025520A Active KR101869323B1 (ko) 2009-10-20 2010-10-20 초고밀도 전력 트렌치 mosfet
KR1020127009939A Ceased KR20120086700A (ko) 2009-10-20 2010-10-20 초고밀도 전력 트렌치 ｍｏｓｆｅｔ

Family Applications After (1)

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KR1020127009939A Ceased KR20120086700A (ko) 2009-10-20 2010-10-20 초고밀도 전력 트렌치 ｍｏｓｆｅｔ

Country Status (6)

Country Link
US (1) US9431530B2 (https=)
EP (1) EP2491581A4 (https=)
JP (1) JP2013508981A (https=)
KR (2) KR101869323B1 (https=)
CN (1) CN102770947B (https=)
WO (1) WO2011050116A2 (https=)

Families Citing this family (22)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9437729B2 (en) * 2007-01-08 2016-09-06 Vishay-Siliconix High-density power MOSFET with planarized metalization
US9947770B2 (en) * 2007-04-03 2018-04-17 Vishay-Siliconix Self-aligned trench MOSFET and method of manufacture
US9484451B2 (en) 2007-10-05 2016-11-01 Vishay-Siliconix MOSFET active area and edge termination area charge balance
US9443974B2 (en) 2009-08-27 2016-09-13 Vishay-Siliconix Super junction trench power MOSFET device fabrication
US9425306B2 (en) 2009-08-27 2016-08-23 Vishay-Siliconix Super junction trench power MOSFET devices
US9431249B2 (en) 2011-12-01 2016-08-30 Vishay-Siliconix Edge termination for super junction MOSFET devices
US9614043B2 (en) * 2012-02-09 2017-04-04 Vishay-Siliconix MOSFET termination trench
US9842911B2 (en) 2012-05-30 2017-12-12 Vishay-Siliconix Adaptive charge balanced edge termination
US9722041B2 (en) * 2012-09-19 2017-08-01 Vishay-Siliconix Breakdown voltage blocking device
US9343579B2 (en) * 2013-05-20 2016-05-17 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
US9006063B2 (en) * 2013-06-28 2015-04-14 Stmicroelectronics S.R.L. Trench MOSFET
KR20150011185A (ko) 2013-07-22 2015-01-30 삼성전자주식회사 반도체 장치 및 그 제조 방법
DE102014005879B4 (de) * 2014-04-16 2021-12-16 Infineon Technologies Ag Vertikale Halbleitervorrichtung
US9508596B2 (en) 2014-06-20 2016-11-29 Vishay-Siliconix Processes used in fabricating a metal-insulator-semiconductor field effect transistor
US9887259B2 (en) 2014-06-23 2018-02-06 Vishay-Siliconix Modulated super junction power MOSFET devices
EP4565029A3 (en) 2014-08-19 2025-07-30 Vishay-Siliconix Mosfet semiconductor device
KR102098996B1 (ko) 2014-08-19 2020-04-08 비쉐이-실리코닉스 초접합 금속 산화물 반도체 전계 효과 트랜지스터
US9431551B2 (en) * 2014-09-15 2016-08-30 Infineon Technologies Ag Circuit arrangement and method of forming a circuit arrangement
CN105870015B (zh) * 2015-01-21 2018-12-28 北大方正集团有限公司 功率器件的制备方法和功率器件
CN107507773B (zh) * 2016-06-14 2021-09-17 格科微电子（上海）有限公司 优化cmos图像传感器晶体管结构的方法
JP6844228B2 (ja) * 2016-12-02 2021-03-17 富士電機株式会社 半導体装置および半導体装置の製造方法
US20220149165A1 (en) * 2020-11-12 2022-05-12 Cree, Inc. Semiconductor devices including an offset metal to polysilicon gate contact

Citations (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5233215A (en) * 1992-06-08 1993-08-03 North Carolina State University At Raleigh Silicon carbide power MOSFET with floating field ring and floating field plate
US5614751A (en) * 1995-01-10 1997-03-25 Siliconix Incorporated Edge termination structure for power MOSFET
US20010026989A1 (en) * 2000-04-04 2001-10-04 International Rectifier Corp. Low voltage power MOSFET device and process for its manufacture
US20020123196A1 (en) * 2000-10-13 2002-09-05 Mike Chang Method of making trench-gated MOSFET having cesium gate oxide layer
US6489204B1 (en) * 2001-08-20 2002-12-03 Episil Technologies, Inc. Save MOS device
JP2005268679A (ja) * 2004-03-22 2005-09-29 Matsushita Electric Ind Co Ltd 半導体装置およびその製造方法
US20060289929A1 (en) * 2005-06-24 2006-12-28 Andrews John T Structure and method for forming laterally extending dielectric layer in a trench-gate FET
KR100714198B1 (ko) * 1999-03-01 2007-05-02 페어차일드 세미컨덕터 코포레이션 매립게이트를 구비한 모스-게이트된 장치 및 그 형성방법
US20070155104A1 (en) * 2006-01-05 2007-07-05 Marchant Bruce D Power device utilizing chemical mechanical planarization
WO2008156071A1 (ja) * 2007-06-19 2008-12-24 Rohm Co., Ltd. 半導体装置
JP2009004411A (ja) * 2007-06-19 2009-01-08 Rohm Co Ltd 半導体装置
US20090166740A1 (en) * 2007-12-31 2009-07-02 Anup Bhalla Reduced mask configuration for power mosfets with electrostatic discharge (ESD) circuit protection

Family Cites Families (129)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3906540A (en) * 1973-04-02 1975-09-16 Nat Semiconductor Corp Metal-silicide Schottky diode employing an aluminum connector
JPH0612828B2 (ja) 1983-06-30 1994-02-16 株式会社東芝 半導体装置
US4641174A (en) 1983-08-08 1987-02-03 General Electric Company Pinch rectifier
US4672407A (en) * 1984-05-30 1987-06-09 Kabushiki Kaisha Toshiba Conductivity modulated MOSFET
JPS6292361A (ja) 1985-10-17 1987-04-27 Toshiba Corp 相補型半導体装置
JPH0693512B2 (ja) * 1986-06-17 1994-11-16 日産自動車株式会社 縦形ｍｏｓｆｅｔ
JPH0685441B2 (ja) 1986-06-18 1994-10-26 日産自動車株式会社 半導体装置
US4799095A (en) 1987-07-06 1989-01-17 General Electric Company Metal oxide semiconductor gated turn off thyristor
US5021840A (en) * 1987-08-18 1991-06-04 Texas Instruments Incorporated Schottky or PN diode with composite sidewall
US4827321A (en) * 1987-10-29 1989-05-02 General Electric Company Metal oxide semiconductor gated turn off thyristor including a schottky contact
US20020074585A1 (en) 1988-05-17 2002-06-20 Advanced Power Technology, Inc., Delaware Corporation Self-aligned power MOSFET with enhanced base region
US5283201A (en) 1988-05-17 1994-02-01 Advanced Power Technology, Inc. High density power device fabrication process
US4969027A (en) 1988-07-18 1990-11-06 General Electric Company Power bipolar transistor device with integral antisaturation diode
US4967243A (en) * 1988-07-19 1990-10-30 General Electric Company Power transistor structure with high speed integral antiparallel Schottky diode
EP0354449A3 (en) 1988-08-08 1991-01-02 Seiko Epson Corporation Semiconductor single crystal substrate
US5055896A (en) 1988-12-15 1991-10-08 Siliconix Incorporated Self-aligned LDD lateral DMOS transistor with high-voltage interconnect capability
US5072266A (en) * 1988-12-27 1991-12-10 Siliconix Incorporated Trench DMOS power transistor with field-shaping body profile and three-dimensional geometry
US4939557A (en) 1989-02-15 1990-07-03 Varian Associates, Inc. (110) GaAs microwave FET
US5111253A (en) * 1989-05-09 1992-05-05 General Electric Company Multicellular FET having a Schottky diode merged therewith
EP0438700A1 (de) 1990-01-25 1991-07-31 Asea Brown Boveri Ag Abschaltbares, MOS-gesteuertes Leistungshalbleiter-Bauelement sowie Verfahren zu dessen Herstellung
JP2692350B2 (ja) * 1990-04-02 1997-12-17 富士電機株式会社 Ｍｏｓ型半導体素子
FR2668465B1 (fr) 1990-10-30 1993-04-16 Inst Francais Du Petrole Procede d'elimination de mercure ou d'arsenic dans un fluide en presence d'une masse de captation de mercure et/ou d'arsenic.
US5168331A (en) * 1991-01-31 1992-12-01 Siliconix Incorporated Power metal-oxide-semiconductor field effect transistor
JPH04291767A (ja) * 1991-03-20 1992-10-15 Fuji Electric Co Ltd 伝導度変調型ｍｏｓｆｅｔ
JP3131239B2 (ja) 1991-04-25 2001-01-31 キヤノン株式会社 半導体回路装置用配線および半導体回路装置
JP3156300B2 (ja) * 1991-10-07 2001-04-16 株式会社デンソー 縦型半導体装置
US5366914A (en) 1992-01-29 1994-11-22 Nec Corporation Vertical power MOSFET structure having reduced cell area
JPH05315620A (ja) 1992-05-08 1993-11-26 Rohm Co Ltd 半導体装置およびその製造法
JP2837033B2 (ja) 1992-07-21 1998-12-14 三菱電機株式会社 半導体装置及びその製造方法
GB9215653D0 (en) 1992-07-23 1992-09-09 Philips Electronics Uk Ltd A method of manufacturing a semiconductor device comprising an insulated gate field effect device
GB9216599D0 (en) 1992-08-05 1992-09-16 Philips Electronics Uk Ltd A semiconductor device comprising a vertical insulated gate field effect device and a method of manufacturing such a device
GB9306895D0 (en) 1993-04-01 1993-05-26 Philips Electronics Uk Ltd A method of manufacturing a semiconductor device comprising an insulated gate field effect device
US5430315A (en) * 1993-07-22 1995-07-04 Rumennik; Vladimir Bi-directional power trench MOS field effect transistor having low on-state resistance and low leakage current
JP3383377B2 (ja) * 1993-10-28 2003-03-04 株式会社東芝 トレンチ構造の縦型のノーマリーオン型のパワーｍｏｓｆｅｔおよびその製造方法
JP3334290B2 (ja) * 1993-11-12 2002-10-15 株式会社デンソー 半導体装置
JPH07176745A (ja) 1993-12-17 1995-07-14 Semiconductor Energy Lab Co Ltd 半導体素子
US5567634A (en) 1995-05-01 1996-10-22 National Semiconductor Corporation Method of fabricating self-aligned contact trench DMOS transistors
US6140678A (en) * 1995-06-02 2000-10-31 Siliconix Incorporated Trench-gated power MOSFET with protective diode
JP2988871B2 (ja) 1995-06-02 1999-12-13 シリコニックス・インコーポレイテッド トレンチゲートパワーｍｏｓｆｅｔ
DE69631995T2 (de) * 1995-06-02 2005-02-10 Siliconix Inc., Santa Clara Bidirektional sperrender Graben-Leistungs-MOSFET
US6049108A (en) * 1995-06-02 2000-04-11 Siliconix Incorporated Trench-gated MOSFET with bidirectional voltage clamping
US6204533B1 (en) * 1995-06-02 2001-03-20 Siliconix Incorporated Vertical trench-gated power MOSFET having stripe geometry and high cell density
US5998837A (en) * 1995-06-02 1999-12-07 Siliconix Incorporated Trench-gated power MOSFET with protective diode having adjustable breakdown voltage
US5689128A (en) * 1995-08-21 1997-11-18 Siliconix Incorporated High density trenched DMOS transistor
US5814858A (en) * 1996-03-15 1998-09-29 Siliconix Incorporated Vertical power MOSFET having reduced sensitivity to variations in thickness of epitaxial layer
JPH09260645A (ja) 1996-03-19 1997-10-03 Sanyo Electric Co Ltd 半導体装置
US5770878A (en) * 1996-04-10 1998-06-23 Harris Corporation Trench MOS gate device
US5808340A (en) * 1996-09-18 1998-09-15 Advanced Micro Devices, Inc. Short channel self aligned VMOS field effect transistor
US7269034B2 (en) * 1997-01-24 2007-09-11 Synqor, Inc. High efficiency power converter
JP3173405B2 (ja) 1997-01-31 2001-06-04 日本電気株式会社 半導体装置の製造方法
US5952695A (en) * 1997-03-05 1999-09-14 International Business Machines Corporation Silicon-on-insulator and CMOS-on-SOI double film structures
JP3545590B2 (ja) 1997-03-14 2004-07-21 株式会社東芝 半導体装置
US6180966B1 (en) 1997-03-25 2001-01-30 Hitachi, Ltd. Trench gate type semiconductor device with current sensing cell
US6172398B1 (en) * 1997-08-11 2001-01-09 Magepower Semiconductor Corp. Trenched DMOS device provided with body-dopant redistribution-compensation region for preventing punch through and adjusting threshold voltage
JP3502531B2 (ja) 1997-08-28 2004-03-02 株式会社ルネサステクノロジ 半導体装置の製造方法
JPH11145457A (ja) * 1997-11-07 1999-05-28 Nec Corp 縦型電界効果トランジスタ
US6268242B1 (en) 1997-12-31 2001-07-31 Richard K. Williams Method of forming vertical mosfet device having voltage clamped gate and self-aligned contact
JP3705919B2 (ja) 1998-03-05 2005-10-12 三菱電機株式会社 半導体装置及びその製造方法
US6939776B2 (en) * 1998-09-29 2005-09-06 Sanyo Electric Co., Ltd. Semiconductor device and a method of fabricating the same
US6621121B2 (en) * 1998-10-26 2003-09-16 Silicon Semiconductor Corporation Vertical MOSFETs having trench-based gate electrodes within deeper trench-based source electrodes
US7578923B2 (en) 1998-12-01 2009-08-25 Novellus Systems, Inc. Electropolishing system and process
JP3743189B2 (ja) 1999-01-27 2006-02-08 富士通株式会社 不揮発性半導体記憶装置及びその製造方法
US6277695B1 (en) 1999-04-16 2001-08-21 Siliconix Incorporated Method of forming vertical planar DMOSFET with self-aligned contact
US6413822B2 (en) 1999-04-22 2002-07-02 Advanced Analogic Technologies, Inc. Super-self-aligned fabrication process of trench-gate DMOS with overlying device layer
US6238981B1 (en) * 1999-05-10 2001-05-29 Intersil Corporation Process for forming MOS-gated devices having self-aligned trenches
GB9917099D0 (en) 1999-07-22 1999-09-22 Koninkl Philips Electronics Nv Cellular trench-gate field-effect transistors
US6483171B1 (en) 1999-08-13 2002-11-19 Micron Technology, Inc. Vertical sub-micron CMOS transistors on (110), (111), (311), (511), and higher order surfaces of bulk, SOI and thin film structures and method of forming same
US6211018B1 (en) 1999-08-14 2001-04-03 Electronics And Telecommunications Research Institute Method for fabricating high density trench gate type power device
US6245615B1 (en) 1999-08-31 2001-06-12 Micron Technology, Inc. Method and apparatus on (110) surfaces of silicon structures with conduction in the <110> direction
US6348712B1 (en) * 1999-10-27 2002-02-19 Siliconix Incorporated High density trench-gated power MOSFET
GB9928285D0 (en) 1999-11-30 2000-01-26 Koninkl Philips Electronics Nv Manufacture of trench-gate semiconductor devices
US6285060B1 (en) * 1999-12-30 2001-09-04 Siliconix Incorporated Barrier accumulation-mode MOSFET
US6472678B1 (en) 2000-06-16 2002-10-29 General Semiconductor, Inc. Trench MOSFET with double-diffused body profile
US6784486B2 (en) 2000-06-23 2004-08-31 Silicon Semiconductor Corporation Vertical power devices having retrograded-doped transition regions therein
JP2002016080A (ja) 2000-06-28 2002-01-18 Toshiba Corp トレンチゲート型ｍｏｓｆｅｔの製造方法
JP4528460B2 (ja) 2000-06-30 2010-08-18 株式会社東芝 半導体素子
US6700158B1 (en) 2000-08-18 2004-03-02 Fairchild Semiconductor Corporation Trench corner protection for trench MOSFET
JP2002110978A (ja) 2000-10-02 2002-04-12 Toshiba Corp 電力用半導体素子
JP2002222950A (ja) 2001-01-25 2002-08-09 Denso Corp 炭化珪素半導体装置の製造方法
US6710403B2 (en) 2002-07-30 2004-03-23 Fairchild Semiconductor Corporation Dual trench power MOSFET
JP3531613B2 (ja) 2001-02-06 2004-05-31 株式会社デンソー トレンチゲート型半導体装置及びその製造方法
JP2002280553A (ja) * 2001-03-19 2002-09-27 Toshiba Corp 半導体装置及びその製造方法
EP1267415A3 (en) 2001-06-11 2009-04-15 Kabushiki Kaisha Toshiba Power semiconductor device having resurf layer
JP2003030396A (ja) 2001-07-13 2003-01-31 Nec Corp 委託作業管理システム、方法およびプログラム
GB0118000D0 (en) 2001-07-24 2001-09-19 Koninkl Philips Electronics Nv Manufacture of semiconductor devices with schottky barriers
US6882000B2 (en) 2001-08-10 2005-04-19 Siliconix Incorporated Trench MIS device with reduced gate-to-drain capacitance
US7045859B2 (en) * 2001-09-05 2006-05-16 International Rectifier Corporation Trench fet with self aligned source and contact
CN1331238C (zh) * 2001-09-19 2007-08-08 株式会社东芝 半导体装置及其制造方法
JP2003115587A (ja) 2001-10-03 2003-04-18 Tadahiro Omi ＜１１０＞方位のシリコン表面上に形成された半導体装置およびその製造方法
KR100406180B1 (ko) 2001-12-22 2003-11-17 주식회사 하이닉스반도체 플래쉬 메모리 셀의 제조 방법
JP2003303967A (ja) * 2002-04-09 2003-10-24 Shindengen Electric Mfg Co Ltd 半導体装置およびその製造方法
JP4004843B2 (ja) * 2002-04-24 2007-11-07 Ｎｅｃエレクトロニクス株式会社 縦型ｍｏｓｆｅｔの製造方法
JP3652322B2 (ja) 2002-04-30 2005-05-25 Ｎｅｃエレクトロニクス株式会社 縦型ｍｏｓｆｅｔとその製造方法
JP3640945B2 (ja) * 2002-09-02 2005-04-20 株式会社東芝 トレンチゲート型半導体装置及びその製造方法
US8080459B2 (en) 2002-09-24 2011-12-20 Vishay-Siliconix Self aligned contact in a semiconductor device and method of fabricating the same
JP3931138B2 (ja) 2002-12-25 2007-06-13 三菱電機株式会社 電力用半導体装置及び電力用半導体装置の製造方法
US6861701B2 (en) * 2003-03-05 2005-03-01 Advanced Analogic Technologies, Inc. Trench power MOSFET with planarized gate bus
US7638841B2 (en) 2003-05-20 2009-12-29 Fairchild Semiconductor Corporation Power semiconductor devices and methods of manufacture
JP2004356114A (ja) 2003-05-26 2004-12-16 Tadahiro Omi Ｐチャネルパワーｍｉｓ電界効果トランジスタおよびスイッチング回路
US6987305B2 (en) 2003-08-04 2006-01-17 International Rectifier Corporation Integrated FET and schottky device
US7022578B2 (en) 2003-10-09 2006-04-04 Chartered Semiconductor Manufacturing Ltd. Heterojunction bipolar transistor using reverse emitter window
JP4470454B2 (ja) 2003-11-04 2010-06-02 株式会社豊田中央研究所 半導体装置とその製造方法
JP4913336B2 (ja) * 2004-09-28 2012-04-11 ルネサスエレクトロニクス株式会社 半導体装置
JP4841829B2 (ja) 2004-11-17 2011-12-21 ルネサスエレクトロニクス株式会社 半導体装置及びその製造方法
US20060108635A1 (en) 2004-11-23 2006-05-25 Alpha Omega Semiconductor Limited Trenched MOSFETS with part of the device formed on a (110) crystal plane
DE102004057237B4 (de) 2004-11-26 2007-02-08 Infineon Technologies Ag Verfahren zum Herstellen von Kontaktlöchern in einem Halbleiterkörper sowie Transistor mit vertikalem Aufbau
US20060113588A1 (en) * 2004-11-29 2006-06-01 Sillicon-Based Technology Corp. Self-aligned trench-type DMOS transistor structure and its manufacturing methods
US7439583B2 (en) 2004-12-27 2008-10-21 Third Dimension (3D) Semiconductor, Inc. Tungsten plug drain extension
DE112006000832B4 (de) * 2005-04-06 2018-09-27 Fairchild Semiconductor Corporation Trenched-Gate-Feldeffekttransistoren und Verfahren zum Bilden derselben
DE112005003584B4 (de) 2005-05-24 2011-06-16 Vishay-Siliconix, Santa Clara Verfahren zum Herstellen eines Trench-Metalloxid-Halbleiter-Feldeffekttransistors
US7592650B2 (en) * 2005-06-06 2009-09-22 M-Mos Semiconductor Sdn. Bhd. High density hybrid MOSFET device
TWI400757B (zh) 2005-06-29 2013-07-01 快捷半導體公司 形成遮蔽閘極場效應電晶體之方法
JP2007012977A (ja) 2005-07-01 2007-01-18 Toshiba Corp 半導体装置
JP2007027193A (ja) 2005-07-12 2007-02-01 Renesas Technology Corp 半導体装置およびその製造方法、ならびに非絶縁型ｄｃ／ｄｃコンバータ
JP4928754B2 (ja) 2005-07-20 2012-05-09 株式会社東芝 電力用半導体装置
JP2007035841A (ja) * 2005-07-26 2007-02-08 Toshiba Corp 半導体装置
JP5222466B2 (ja) 2006-08-09 2013-06-26 ルネサスエレクトロニクス株式会社 半導体装置およびその製造方法
US9437729B2 (en) * 2007-01-08 2016-09-06 Vishay-Siliconix High-density power MOSFET with planarized metalization
US8344451B2 (en) * 2007-01-09 2013-01-01 Maxpower Semiconductor, Inc. Semiconductor device
US9947770B2 (en) * 2007-04-03 2018-04-17 Vishay-Siliconix Self-aligned trench MOSFET and method of manufacture
JP4748149B2 (ja) 2007-12-24 2011-08-17 株式会社デンソー 半導体装置
US8642459B2 (en) 2008-08-28 2014-02-04 Infineon Technologies Ag Method for forming a semiconductor device with an isolation region on a gate electrode
US8039877B2 (en) 2008-09-09 2011-10-18 Fairchild Semiconductor Corporation (110)-oriented p-channel trench MOSFET having high-K gate dielectric
US7910486B2 (en) * 2009-06-12 2011-03-22 Alpha & Omega Semiconductor, Inc. Method for forming nanotube semiconductor devices
US9425306B2 (en) 2009-08-27 2016-08-23 Vishay-Siliconix Super junction trench power MOSFET devices
US9443974B2 (en) 2009-08-27 2016-09-13 Vishay-Siliconix Super junction trench power MOSFET device fabrication
US8362550B2 (en) 2011-01-20 2013-01-29 Fairchild Semiconductor Corporation Trench power MOSFET with reduced on-resistance
US8466513B2 (en) 2011-06-13 2013-06-18 Semiconductor Components Industries, Llc Semiconductor device with enhanced mobility and method
US8633539B2 (en) 2011-06-27 2014-01-21 Infineon Technologies Austria Ag Trench transistor and manufacturing method of the trench transistor

Patent Citations (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5233215A (en) * 1992-06-08 1993-08-03 North Carolina State University At Raleigh Silicon carbide power MOSFET with floating field ring and floating field plate
US5614751A (en) * 1995-01-10 1997-03-25 Siliconix Incorporated Edge termination structure for power MOSFET
KR100714198B1 (ko) * 1999-03-01 2007-05-02 페어차일드 세미컨덕터 코포레이션 매립게이트를 구비한 모스-게이트된 장치 및 그 형성방법
US20010026989A1 (en) * 2000-04-04 2001-10-04 International Rectifier Corp. Low voltage power MOSFET device and process for its manufacture
US20020123196A1 (en) * 2000-10-13 2002-09-05 Mike Chang Method of making trench-gated MOSFET having cesium gate oxide layer
US6489204B1 (en) * 2001-08-20 2002-12-03 Episil Technologies, Inc. Save MOS device
JP2005268679A (ja) * 2004-03-22 2005-09-29 Matsushita Electric Ind Co Ltd 半導体装置およびその製造方法
US20060289929A1 (en) * 2005-06-24 2006-12-28 Andrews John T Structure and method for forming laterally extending dielectric layer in a trench-gate FET
US20070155104A1 (en) * 2006-01-05 2007-07-05 Marchant Bruce D Power device utilizing chemical mechanical planarization
JP2009522807A (ja) * 2006-01-05 2009-06-11 フェアチャイルド・セミコンダクター・コーポレーション 化学的機械式平坦化を利用したパワーデバイス
WO2008156071A1 (ja) * 2007-06-19 2008-12-24 Rohm Co., Ltd. 半導体装置
JP2009004411A (ja) * 2007-06-19 2009-01-08 Rohm Co Ltd 半導体装置
US20090166740A1 (en) * 2007-12-31 2009-07-02 Anup Bhalla Reduced mask configuration for power mosfets with electrostatic discharge (ESD) circuit protection

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
일본 공표특허공보 특표2009-522807호(2009.06.11.) 1부. *

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CN102770947B (zh) 2015-07-01
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WO2011050116A2 (en) 2011-04-28
US20110089486A1 (en) 2011-04-21
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CN102770947A (zh) 2012-11-07

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