JP2013506291A5 - - Google Patents

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Publication number
JP2013506291A5
JP2013506291A5 JP2012530914A JP2012530914A JP2013506291A5 JP 2013506291 A5 JP2013506291 A5 JP 2013506291A5 JP 2012530914 A JP2012530914 A JP 2012530914A JP 2012530914 A JP2012530914 A JP 2012530914A JP 2013506291 A5 JP2013506291 A5 JP 2013506291A5
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JP
Japan
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semiconductor
semiconductor material
semiconductor structure
epitaxy
epitaxial
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JP2012530914A
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English (en)
Japanese (ja)
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JP5689470B2 (ja
JP2013506291A (ja
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Priority claimed from US12/566,004 external-priority patent/US8022488B2/en
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Publication of JP2013506291A5 publication Critical patent/JP2013506291A5/ja
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Publication of JP5689470B2 publication Critical patent/JP5689470B2/ja
Expired - Fee Related legal-status Critical Current
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JP2012530914A 2009-09-24 2010-09-08 埋め込みストレッサを有する高性能ｆｅｔを形成するための方法および構造 Expired - Fee Related JP5689470B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US12/566,004 2009-09-24
US12/566,004 US8022488B2 (en) 2009-09-24 2009-09-24 High-performance FETs with embedded stressors
PCT/US2010/048039 WO2011037743A2 (en) 2009-09-24 2010-09-08 Method and structure for forming high-performance fets with embedded stressors

Publications (3)

Publication Number Publication Date
JP2013506291A JP2013506291A (ja) 2013-02-21
JP2013506291A5 true JP2013506291A5 (enExample) 2014-08-14
JP5689470B2 JP5689470B2 (ja) 2015-03-25

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JP2012530914A Expired - Fee Related JP5689470B2 (ja) 2009-09-24 2010-09-08 埋め込みストレッサを有する高性能ｆｅｔを形成するための方法および構造

Country Status (7)

Country Link
US (1) US8022488B2 (enExample)
JP (1) JP5689470B2 (enExample)
CN (1) CN102511081B (enExample)
DE (1) DE112010002895B4 (enExample)
GB (1) GB2486839B (enExample)
TW (1) TW201125124A (enExample)
WO (1) WO2011037743A2 (enExample)

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