JP5689470B2 - 埋め込みストレッサを有する高性能fetを形成するための方法および構造 - Google Patents
埋め込みストレッサを有する高性能fetを形成するための方法および構造 Download PDFInfo
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- JP5689470B2 JP5689470B2 JP2012530914A JP2012530914A JP5689470B2 JP 5689470 B2 JP5689470 B2 JP 5689470B2 JP 2012530914 A JP2012530914 A JP 2012530914A JP 2012530914 A JP2012530914 A JP 2012530914A JP 5689470 B2 JP5689470 B2 JP 5689470B2
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- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66409—Unipolar field-effect transistors
- H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
- H01L29/665—Unipolar field-effect transistors with an insulated gate, i.e. MISFET using self aligned silicidation, i.e. salicide
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66409—Unipolar field-effect transistors
- H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
- H01L29/66545—Unipolar field-effect transistors with an insulated gate, i.e. MISFET using a dummy, i.e. replacement gate in a process wherein at least a part of the final gate is self aligned to the dummy gate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66409—Unipolar field-effect transistors
- H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
- H01L29/6656—Unipolar field-effect transistors with an insulated gate, i.e. MISFET using multiple spacer layers, e.g. multiple sidewall spacers
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- Engineering & Computer Science (AREA)
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- Power Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Computer Hardware Design (AREA)
- Manufacturing & Machinery (AREA)
- Chemical & Material Sciences (AREA)
- Crystallography & Structural Chemistry (AREA)
- Insulated Gate Type Field-Effect Transistor (AREA)
- Recrystallisation Techniques (AREA)
- Thin Film Transistor (AREA)
Description
Claims (14)
- 半導体基板の上面上に位置する少なくとも1つのゲート・スタックと、
前記少なくとも1つのゲート・スタックの対向側に存在する1対のくぼみ領域の内部で前記少なくとも1つのゲート・スタックの設置場所に位置するドーピングされた第1のエピタキシ半導体材料であって、前記少なくとも1つのゲート・スタックのチャネル上にひずみを誘発する、第1のエピタキシ半導体材料と、
前記くぼみ領域の各々において前記第1のエピタキシ半導体材料の上面内に位置する拡散拡張領域であって、前記少なくとも1つのゲート・スタックの下の前記半導体基板内まで延びる拡散拡張領域と、
前記拡散拡張領域の上面上に位置する第2のエピタキシ半導体材料であって、前記第1のエピタキシ半導体材料よりも高いドーパント濃度を有する、第2のエピタキシ半導体材料と、を含み、
前記拡散拡張領域は、前記第2のエピタキシ半導体材料から導出されたドーパントを含む領域として画定される、半導体構造。 - 前記1対のくぼみ領域が、前記半導体基板の台座によって相互に分離されている、請求項1に記載の半導体構造。
- 前記台座が直線状の側壁を有する、請求項2に記載の半導体構造。
- 前記台座が砂時計の形状を有する、請求項2に記載の半導体構造。
- 前記第1のエピタキシ半導体材料が、5x1018原子/cm3未満のドーパント濃度を有する、請求項1または4に記載の半導体構造。
- 前記第2のエピタキシ半導体材料が1x1019原子/cm3より大きいドーパント濃度を有する、請求項1または5に記載の半導体構造。
- 前記第1のエピタキシ半導体材料がSiGeを含む、請求項1または6に記載の半導体構造。
- 前記第1のエピタキシ半導体材料がSi:Cを含む、請求項1または6に記載の半導体構造。
- 前記半導体基板内に位置するハロー注入領域を更に含み、前記ハロー領域が前記拡散拡張領域および前記第1のエピタキシ半導体材料に接触している、請求項1または8に記載の半導体構造。
- 前記第2のエピタキシ半導体材料の少なくとも上面上に位置する金属半導体合金を更に含む、請求項1または9に記載の半導体構造。
- 前記半導体基板の表面上に位置する基部を有し、
前記少なくとも1つのゲート・スタックの側壁と接触する側方縁部を有する第1のスペーサと、前記第2のエピタキシ半導体材料の上面上に位置する基部を有し、前記第1のスペーサの側壁と接触する側方縁部を有する第2のスペーサと、を更に含む、請求項1または10に記載の半導体構造。 - 深部のイオン注入ソース領域も深部のイオン注入ドレイン領域も存在しない、請求項1に記載の半導体構造。
- 前記第1のエピタキシ半導体材料の上面が、前記半導体基板の前記上面と同一平面であるか、または前記上面よりも上に延出する、請求項1に記載の半導体構造。
- 前記第1のエピタキシ半導体材料の上面が前記半導体基板の前記上面の下に位置する、請求項1に記載の半導体構造。
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US12/566,004 US8022488B2 (en) | 2009-09-24 | 2009-09-24 | High-performance FETs with embedded stressors |
US12/566,004 | 2009-09-24 | ||
PCT/US2010/048039 WO2011037743A2 (en) | 2009-09-24 | 2010-09-08 | Method and structure for forming high-performance fets with embedded stressors |
Publications (3)
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JP2013506291A JP2013506291A (ja) | 2013-02-21 |
JP2013506291A5 JP2013506291A5 (ja) | 2014-08-14 |
JP5689470B2 true JP5689470B2 (ja) | 2015-03-25 |
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Country Status (7)
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US (1) | US8022488B2 (ja) |
JP (1) | JP5689470B2 (ja) |
CN (1) | CN102511081B (ja) |
DE (1) | DE112010002895B4 (ja) |
GB (1) | GB2486839B (ja) |
TW (1) | TW201125124A (ja) |
WO (1) | WO2011037743A2 (ja) |
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2009
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- 2010-09-08 GB GB1204634.8A patent/GB2486839B/en not_active Expired - Fee Related
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- 2010-09-08 JP JP2012530914A patent/JP5689470B2/ja not_active Expired - Fee Related
- 2010-09-08 CN CN201080041761.1A patent/CN102511081B/zh active Active
- 2010-09-08 WO PCT/US2010/048039 patent/WO2011037743A2/en active Application Filing
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Publication number | Publication date |
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US8022488B2 (en) | 2011-09-20 |
TW201125124A (en) | 2011-07-16 |
WO2011037743A3 (en) | 2011-07-07 |
GB2486839B (en) | 2013-09-04 |
CN102511081A (zh) | 2012-06-20 |
CN102511081B (zh) | 2015-10-14 |
GB2486839A (en) | 2012-06-27 |
DE112010002895T5 (de) | 2012-06-21 |
GB201204634D0 (en) | 2012-05-02 |
WO2011037743A2 (en) | 2011-03-31 |
DE112010002895B4 (de) | 2012-11-08 |
JP2013506291A (ja) | 2013-02-21 |
US20110068396A1 (en) | 2011-03-24 |
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