JP2012516557A5 - - Google Patents

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Publication number
JP2012516557A5
JP2012516557A5 JP2011546707A JP2011546707A JP2012516557A5 JP 2012516557 A5 JP2012516557 A5 JP 2012516557A5 JP 2011546707 A JP2011546707 A JP 2011546707A JP 2011546707 A JP2011546707 A JP 2011546707A JP 2012516557 A5 JP2012516557 A5 JP 2012516557A5
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JP
Japan
Prior art keywords
forming
strain
dopant
inducing semiconductor
buffer layer
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JP2011546707A
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English (en)
Japanese (ja)
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JP2012516557A (ja
JP5571693B2 (ja
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Priority claimed from DE102009006884A external-priority patent/DE102009006884B4/de
Application filed filed Critical
Priority claimed from PCT/EP2010/000492 external-priority patent/WO2010086154A1/en
Publication of JP2012516557A publication Critical patent/JP2012516557A/ja
Publication of JP2012516557A5 publication Critical patent/JP2012516557A5/ja
Application granted granted Critical
Publication of JP5571693B2 publication Critical patent/JP5571693B2/ja
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JP2011546707A 2009-01-30 2010-01-27 歪誘起合金及び段階的なドーパントプロファイルを含むその場で形成されるドレイン及びソース領域 Active JP5571693B2 (ja)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
DE102009006884A DE102009006884B4 (de) 2009-01-30 2009-01-30 Verfahren zur Herstellung eines Transistorbauelementes mit In-Situ erzeugten Drain- und Source-Gebieten mit einer verformungsinduzierenden Legierung und einem graduell variierenden Dotierstoffprofil und entsprechendes Transistorbauelement
DE102009006884.8 2009-01-30
US12/688,999 US8278174B2 (en) 2009-01-30 2010-01-18 In situ formed drain and source regions including a strain-inducing alloy and a graded dopant profile
US12/688,999 2010-01-18
PCT/EP2010/000492 WO2010086154A1 (en) 2009-01-30 2010-01-27 In situ formed drain and source regions including a strain inducing alloy and a graded dopant profile

Publications (3)

Publication Number Publication Date
JP2012516557A JP2012516557A (ja) 2012-07-19
JP2012516557A5 true JP2012516557A5 (enExample) 2013-03-07
JP5571693B2 JP5571693B2 (ja) 2014-08-13

Family

ID=42317335

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2011546707A Active JP5571693B2 (ja) 2009-01-30 2010-01-27 歪誘起合金及び段階的なドーパントプロファイルを含むその場で形成されるドレイン及びソース領域

Country Status (5)

Country Link
US (1) US8278174B2 (enExample)
JP (1) JP5571693B2 (enExample)
KR (1) KR101605150B1 (enExample)
CN (1) CN102388442A (enExample)
DE (1) DE102009006884B4 (enExample)

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