JP2010520620A5 - - Google Patents

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Publication number
JP2010520620A5
JP2010520620A5 JP2009551780A JP2009551780A JP2010520620A5 JP 2010520620 A5 JP2010520620 A5 JP 2010520620A5 JP 2009551780 A JP2009551780 A JP 2009551780A JP 2009551780 A JP2009551780 A JP 2009551780A JP 2010520620 A5 JP2010520620 A5 JP 2010520620A5
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JP
Japan
Prior art keywords
semiconductor device
type
semiconductor
gate structure
semiconductor material
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Application number
JP2009551780A
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English (en)
Japanese (ja)
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JP2010520620A (ja
JP5559547B2 (ja
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Priority claimed from US11/680,181 external-priority patent/US7572706B2/en
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Publication of JP2010520620A publication Critical patent/JP2010520620A/ja
Publication of JP2010520620A5 publication Critical patent/JP2010520620A5/ja
Application granted granted Critical
Publication of JP5559547B2 publication Critical patent/JP5559547B2/ja
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

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JP2009551780A 2007-02-28 2008-02-11 半導体デバイスを作る方法 Expired - Fee Related JP5559547B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US11/680,181 2007-02-28
US11/680,181 US7572706B2 (en) 2007-02-28 2007-02-28 Source/drain stressor and method therefor
PCT/US2008/053563 WO2008106304A1 (en) 2007-02-28 2008-02-11 Source/drain stressor and method therefor

Publications (3)

Publication Number Publication Date
JP2010520620A JP2010520620A (ja) 2010-06-10
JP2010520620A5 true JP2010520620A5 (enExample) 2011-03-31
JP5559547B2 JP5559547B2 (ja) 2014-07-23

Family

ID=39714887

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2009551780A Expired - Fee Related JP5559547B2 (ja) 2007-02-28 2008-02-11 半導体デバイスを作る方法

Country Status (7)

Country Link
US (1) US7572706B2 (enExample)
EP (1) EP2115778A4 (enExample)
JP (1) JP5559547B2 (enExample)
KR (1) KR101399208B1 (enExample)
CN (1) CN101622713B (enExample)
TW (1) TWI436431B (enExample)
WO (1) WO2008106304A1 (enExample)

Families Citing this family (15)

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Publication number Priority date Publication date Assignee Title
US8080452B2 (en) 2006-08-01 2011-12-20 Nxp, B.V. Effecting selectivity of silicon or silicon-germanium deposition on a silicon or silicon-germanium substrate by doping
KR100746232B1 (ko) * 2006-08-25 2007-08-03 삼성전자주식회사 스트레인드 채널을 갖는 모스 트랜지스터 및 그 제조방법
US20080248598A1 (en) * 2007-04-09 2008-10-09 Rohit Pal Method and apparatus for determining characteristics of a stressed material using scatterometry
US7745847B2 (en) * 2007-08-09 2010-06-29 United Microelectronics Corp. Metal oxide semiconductor transistor
US20100102393A1 (en) * 2008-10-29 2010-04-29 Chartered Semiconductor Manufacturing, Ltd. Metal gate transistors
US8124487B2 (en) * 2008-12-22 2012-02-28 Varian Semiconductor Equipment Associates, Inc. Method for enhancing tensile stress and source/drain activation using Si:C
US20110049582A1 (en) * 2009-09-03 2011-03-03 International Business Machines Corporation Asymmetric source and drain stressor regions
US8928094B2 (en) * 2010-09-03 2015-01-06 Taiwan Semiconductor Manufacturing Company, Ltd. Strained asymmetric source/drain
CN102456739A (zh) * 2010-10-28 2012-05-16 中国科学院微电子研究所 半导体结构及其形成方法
CN102683385B (zh) * 2012-05-30 2014-12-24 清华大学 半导体结构及其形成方法
KR20140042460A (ko) * 2012-09-28 2014-04-07 삼성전자주식회사 반도체 소자
KR102137371B1 (ko) * 2013-10-29 2020-07-27 삼성전자 주식회사 반도체 장치 및 이의 제조 방법
CN106960838B (zh) * 2016-01-11 2019-07-02 中芯国际集成电路制造(上海)有限公司 静电保护器件及其形成方法
US10032868B2 (en) 2016-09-09 2018-07-24 Texas Instruments Incorporated High performance super-beta NPN (SBNPN)
CN114072544A (zh) * 2019-07-26 2022-02-18 应用材料公司 各向异性的外延生长

Family Cites Families (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6313378A (ja) * 1986-07-04 1988-01-20 Nippon Telegr & Teleph Corp <Ntt> 半導体装置およびその製造方法
EP0412701B1 (en) * 1989-07-31 1996-09-25 Canon Kabushiki Kaisha Thin film transistor and preparation thereof
JPH0423329A (ja) * 1990-05-14 1992-01-27 Fujitsu Ltd 半導体装置の製造方法
US5427964A (en) * 1994-04-04 1995-06-27 Motorola, Inc. Insulated gate field effect transistor and method for fabricating
JPH0992825A (ja) * 1995-09-26 1997-04-04 Fuji Film Micro Device Kk 半導体装置およびその製造方法
US6621131B2 (en) 2001-11-01 2003-09-16 Intel Corporation Semiconductor transistor having a stressed channel
US6833307B1 (en) * 2002-10-30 2004-12-21 Advanced Micro Devices, Inc. Method for manufacturing a semiconductor component having an early halo implant
JP2004241755A (ja) * 2003-01-15 2004-08-26 Renesas Technology Corp 半導体装置
US20040262683A1 (en) * 2003-06-27 2004-12-30 Bohr Mark T. PMOS transistor strain optimization with raised junction regions
KR100488196B1 (ko) * 2003-09-29 2005-05-09 삼성전자주식회사 돌출된 드레인을 가지는 트랜지스터 및 이의 제조 방법
US7244654B2 (en) * 2003-12-31 2007-07-17 Texas Instruments Incorporated Drive current improvement from recessed SiGe incorporation close to gate
JP4837902B2 (ja) * 2004-06-24 2011-12-14 富士通セミコンダクター株式会社 半導体装置
US7642607B2 (en) * 2005-08-10 2010-01-05 Taiwan Semiconductor Manufacturing Company, Ltd. MOS devices with reduced recess on substrate surface
US7449753B2 (en) * 2006-04-10 2008-11-11 Taiwan Semiconductor Manufacturing Company, Ltd. Write margin improvement for SRAM cells with SiGe stressors
US20070298557A1 (en) * 2006-06-22 2007-12-27 Chun-Feng Nieh Junction leakage reduction in SiGe process by tilt implantation
US7482211B2 (en) * 2006-06-22 2009-01-27 Taiwan Semiconductor Manufacturing Company, Ltd. Junction leakage reduction in SiGe process by implantation
US8008157B2 (en) * 2006-10-27 2011-08-30 Taiwan Semiconductor Manufacturing Company, Ltd. CMOS device with raised source and drain regions
CN101641770B (zh) * 2007-03-28 2012-03-07 富士通半导体股份有限公司 半导体器件及其制造方法

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