TWI436431B - 源極／汲極應力件及其形成方法 - Google Patents
源極／汲極應力件及其形成方法 Download PDFInfo
- Publication number
- TWI436431B TWI436431B TW097103705A TW97103705A TWI436431B TW I436431 B TWI436431 B TW I436431B TW 097103705 A TW097103705 A TW 097103705A TW 97103705 A TW97103705 A TW 97103705A TW I436431 B TWI436431 B TW I436431B
- Authority
- TW
- Taiwan
- Prior art keywords
- type
- semiconductor device
- semiconductor
- semiconductor material
- forming
- Prior art date
Links
- 238000000034 method Methods 0.000 title claims description 24
- 239000004065 semiconductor Substances 0.000 claims description 154
- 239000000463 material Substances 0.000 claims description 64
- 125000006850 spacer group Chemical group 0.000 claims description 52
- 239000000758 substrate Substances 0.000 claims description 22
- 239000007943 implant Substances 0.000 claims description 20
- 238000000137 annealing Methods 0.000 claims description 15
- 229910052732 germanium Inorganic materials 0.000 claims description 11
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 claims description 11
- 239000002019 doping agent Substances 0.000 claims description 9
- 238000011065 in-situ storage Methods 0.000 claims description 9
- 229920002120 photoresistant polymer Polymers 0.000 claims description 8
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 claims description 6
- 229910052785 arsenic Inorganic materials 0.000 claims description 6
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 claims description 6
- 229910052796 boron Inorganic materials 0.000 claims description 6
- 229910052698 phosphorus Inorganic materials 0.000 claims description 6
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 claims description 5
- 239000011574 phosphorus Substances 0.000 claims description 5
- 229910052787 antimony Inorganic materials 0.000 claims description 4
- WATWJIUSRGPENY-UHFFFAOYSA-N antimony atom Chemical compound [Sb] WATWJIUSRGPENY-UHFFFAOYSA-N 0.000 claims description 4
- OKZIUSOJQLYFSE-UHFFFAOYSA-N difluoroboron Chemical compound F[B]F OKZIUSOJQLYFSE-UHFFFAOYSA-N 0.000 claims description 4
- 238000002513 implantation Methods 0.000 claims description 4
- 229910052738 indium Inorganic materials 0.000 claims description 4
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 claims description 4
- SCCCLDWUZODEKG-UHFFFAOYSA-N germanide Chemical compound [GeH3-] SCCCLDWUZODEKG-UHFFFAOYSA-N 0.000 claims description 3
- NFFIWVVINABMKP-UHFFFAOYSA-N methylidynetantalum Chemical compound [Ta]#C NFFIWVVINABMKP-UHFFFAOYSA-N 0.000 claims description 3
- 229910003468 tantalcarbide Inorganic materials 0.000 claims description 3
- 238000000059 patterning Methods 0.000 claims description 2
- KCFIHQSTJSCCBR-UHFFFAOYSA-N [C].[Ge] Chemical compound [C].[Ge] KCFIHQSTJSCCBR-UHFFFAOYSA-N 0.000 claims 1
- 239000010410 layer Substances 0.000 description 42
- 238000004140 cleaning Methods 0.000 description 10
- 230000015572 biosynthetic process Effects 0.000 description 5
- 230000008569 process Effects 0.000 description 4
- 239000000126 substance Substances 0.000 description 4
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 2
- 230000008901 benefit Effects 0.000 description 2
- 229910052799 carbon Inorganic materials 0.000 description 2
- 239000013078 crystal Substances 0.000 description 2
- 238000009413 insulation Methods 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 150000004767 nitrides Chemical class 0.000 description 2
- 230000003071 parasitic effect Effects 0.000 description 2
- XSOKHXFFCGXDJZ-UHFFFAOYSA-N telluride(2-) Chemical compound [Te-2] XSOKHXFFCGXDJZ-UHFFFAOYSA-N 0.000 description 2
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 1
- 230000009471 action Effects 0.000 description 1
- 230000004888 barrier function Effects 0.000 description 1
- 210000003298 dental enamel Anatomy 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005421 electrostatic potential Methods 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 239000001307 helium Substances 0.000 description 1
- 229910052734 helium Inorganic materials 0.000 description 1
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 description 1
- BHEPBYXIRTUNPN-UHFFFAOYSA-N hydridophosphorus(.) (triplet) Chemical compound [PH] BHEPBYXIRTUNPN-UHFFFAOYSA-N 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 239000011229 interlayer Substances 0.000 description 1
- 238000002955 isolation Methods 0.000 description 1
- 230000000873 masking effect Effects 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- UNASZPQZIFZUSI-UHFFFAOYSA-N methylidyneniobium Chemical compound [Nb]#C UNASZPQZIFZUSI-UHFFFAOYSA-N 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 229910052758 niobium Inorganic materials 0.000 description 1
- 239000010955 niobium Substances 0.000 description 1
- GUCVJGMIXFAOAE-UHFFFAOYSA-N niobium atom Chemical compound [Nb] GUCVJGMIXFAOAE-UHFFFAOYSA-N 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 229920005591 polysilicon Polymers 0.000 description 1
- 239000011241 protective layer Substances 0.000 description 1
- 239000002356 single layer Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/26—Bombardment with radiation
- H01L21/263—Bombardment with radiation with high-energy radiation
- H01L21/265—Bombardment with radiation with high-energy radiation producing ion implantation
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D30/00—Field-effect transistors [FET]
- H10D30/01—Manufacture or treatment
- H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
- H10D30/027—Manufacture or treatment of FETs having insulated gates [IGFET] of lateral single-gate IGFETs
- H10D30/0275—Manufacture or treatment of FETs having insulated gates [IGFET] of lateral single-gate IGFETs forming single crystalline semiconductor source or drain regions resulting in recessed gates, e.g. forming raised source or drain regions
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/26—Bombardment with radiation
- H01L21/263—Bombardment with radiation with high-energy radiation
- H01L21/265—Bombardment with radiation with high-energy radiation producing ion implantation
- H01L21/26586—Bombardment with radiation with high-energy radiation producing ion implantation characterised by the angle between the ion beam and the crystal planes or the main crystal surface
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D30/00—Field-effect transistors [FET]
- H10D30/01—Manufacture or treatment
- H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
- H10D30/0221—Manufacture or treatment of FETs having insulated gates [IGFET] having asymmetry in the channel direction, e.g. lateral high-voltage MISFETs having drain offset region or extended-drain MOSFETs [EDMOS]
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D30/00—Field-effect transistors [FET]
- H10D30/60—Insulated-gate field-effect transistors [IGFET]
- H10D30/601—Insulated-gate field-effect transistors [IGFET] having lightly-doped drain or source extensions, e.g. LDD IGFETs or DDD IGFETs
- H10D30/603—Insulated-gate field-effect transistors [IGFET] having lightly-doped drain or source extensions, e.g. LDD IGFETs or DDD IGFETs having asymmetry in the channel direction, e.g. lateral high-voltage MISFETs having drain offset region or extended drain IGFETs [EDMOS]
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D30/00—Field-effect transistors [FET]
- H10D30/60—Insulated-gate field-effect transistors [IGFET]
- H10D30/791—Arrangements for exerting mechanical stress on the crystal lattice of the channel regions
- H10D30/797—Arrangements for exerting mechanical stress on the crystal lattice of the channel regions being in source or drain regions, e.g. SiGe source or drain
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D64/00—Electrodes of devices having potential barriers
- H10D64/01—Manufacture or treatment
- H10D64/025—Manufacture or treatment forming recessed gates, e.g. by using local oxidation
- H10D64/027—Manufacture or treatment forming recessed gates, e.g. by using local oxidation by etching at gate locations
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D30/00—Field-effect transistors [FET]
- H10D30/01—Manufacture or treatment
- H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
- H10D30/0212—Manufacture or treatment of FETs having insulated gates [IGFET] using self-aligned silicidation
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D30/00—Field-effect transistors [FET]
- H10D30/01—Manufacture or treatment
- H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
- H10D30/031—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT]
- H10D30/0321—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT] comprising silicon, e.g. amorphous silicon or polysilicon
- H10D30/0323—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT] comprising silicon, e.g. amorphous silicon or polysilicon comprising monocrystalline silicon
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
- H10D62/01—Manufacture or treatment
- H10D62/021—Forming source or drain recesses by etching e.g. recessing by etching and then refilling
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D64/00—Electrodes of devices having potential barriers
- H10D64/01—Manufacture or treatment
- H10D64/021—Manufacture or treatment using multiple gate spacer layers, e.g. bilayered sidewall spacers
Landscapes
- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- High Energy & Nuclear Physics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Health & Medical Sciences (AREA)
- Toxicology (AREA)
- Chemical & Material Sciences (AREA)
- Crystallography & Structural Chemistry (AREA)
- Insulated Gate Type Field-Effect Transistor (AREA)
- Thin Film Transistor (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US11/680,181 US7572706B2 (en) | 2007-02-28 | 2007-02-28 | Source/drain stressor and method therefor |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| TW200847299A TW200847299A (en) | 2008-12-01 |
| TWI436431B true TWI436431B (zh) | 2014-05-01 |
Family
ID=39714887
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW097103705A TWI436431B (zh) | 2007-02-28 | 2008-01-31 | 源極／汲極應力件及其形成方法 |
Country Status (7)
| Country | Link |
|---|---|
| US (1) | US7572706B2 (enExample) |
| EP (1) | EP2115778A4 (enExample) |
| JP (1) | JP5559547B2 (enExample) |
| KR (1) | KR101399208B1 (enExample) |
| CN (1) | CN101622713B (enExample) |
| TW (1) | TWI436431B (enExample) |
| WO (1) | WO2008106304A1 (enExample) |
Families Citing this family (15)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US8080452B2 (en) | 2006-08-01 | 2011-12-20 | Nxp, B.V. | Effecting selectivity of silicon or silicon-germanium deposition on a silicon or silicon-germanium substrate by doping |
| KR100746232B1 (ko) * | 2006-08-25 | 2007-08-03 | 삼성전자주식회사 | 스트레인드 채널을 갖는 모스 트랜지스터 및 그 제조방법 |
| US20080248598A1 (en) * | 2007-04-09 | 2008-10-09 | Rohit Pal | Method and apparatus for determining characteristics of a stressed material using scatterometry |
| US7745847B2 (en) * | 2007-08-09 | 2010-06-29 | United Microelectronics Corp. | Metal oxide semiconductor transistor |
| US20100102393A1 (en) * | 2008-10-29 | 2010-04-29 | Chartered Semiconductor Manufacturing, Ltd. | Metal gate transistors |
| US8124487B2 (en) * | 2008-12-22 | 2012-02-28 | Varian Semiconductor Equipment Associates, Inc. | Method for enhancing tensile stress and source/drain activation using Si:C |
| US20110049582A1 (en) * | 2009-09-03 | 2011-03-03 | International Business Machines Corporation | Asymmetric source and drain stressor regions |
| US8928094B2 (en) * | 2010-09-03 | 2015-01-06 | Taiwan Semiconductor Manufacturing Company, Ltd. | Strained asymmetric source/drain |
| CN102456739A (zh) * | 2010-10-28 | 2012-05-16 | 中国科学院微电子研究所 | 半导体结构及其形成方法 |
| CN102683385B (zh) * | 2012-05-30 | 2014-12-24 | 清华大学 | 半导体结构及其形成方法 |
| KR20140042460A (ko) * | 2012-09-28 | 2014-04-07 | 삼성전자주식회사 | 반도체 소자 |
| KR102137371B1 (ko) * | 2013-10-29 | 2020-07-27 | 삼성전자 주식회사 | 반도체 장치 및 이의 제조 방법 |
| CN106960838B (zh) * | 2016-01-11 | 2019-07-02 | 中芯国际集成电路制造(上海)有限公司 | 静电保护器件及其形成方法 |
| US10032868B2 (en) | 2016-09-09 | 2018-07-24 | Texas Instruments Incorporated | High performance super-beta NPN (SBNPN) |
| CN114072544A (zh) * | 2019-07-26 | 2022-02-18 | 应用材料公司 | 各向异性的外延生长 |
Family Cites Families (18)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6313378A (ja) * | 1986-07-04 | 1988-01-20 | Nippon Telegr & Teleph Corp <Ntt> | 半導体装置およびその製造方法 |
| EP0412701B1 (en) * | 1989-07-31 | 1996-09-25 | Canon Kabushiki Kaisha | Thin film transistor and preparation thereof |
| JPH0423329A (ja) * | 1990-05-14 | 1992-01-27 | Fujitsu Ltd | 半導体装置の製造方法 |
| US5427964A (en) * | 1994-04-04 | 1995-06-27 | Motorola, Inc. | Insulated gate field effect transistor and method for fabricating |
| JPH0992825A (ja) * | 1995-09-26 | 1997-04-04 | Fuji Film Micro Device Kk | 半導体装置およびその製造方法 |
| US6621131B2 (en) | 2001-11-01 | 2003-09-16 | Intel Corporation | Semiconductor transistor having a stressed channel |
| US6833307B1 (en) * | 2002-10-30 | 2004-12-21 | Advanced Micro Devices, Inc. | Method for manufacturing a semiconductor component having an early halo implant |
| JP2004241755A (ja) * | 2003-01-15 | 2004-08-26 | Renesas Technology Corp | 半導体装置 |
| US20040262683A1 (en) * | 2003-06-27 | 2004-12-30 | Bohr Mark T. | PMOS transistor strain optimization with raised junction regions |
| KR100488196B1 (ko) * | 2003-09-29 | 2005-05-09 | 삼성전자주식회사 | 돌출된 드레인을 가지는 트랜지스터 및 이의 제조 방법 |
| US7244654B2 (en) * | 2003-12-31 | 2007-07-17 | Texas Instruments Incorporated | Drive current improvement from recessed SiGe incorporation close to gate |
| JP4837902B2 (ja) * | 2004-06-24 | 2011-12-14 | 富士通セミコンダクター株式会社 | 半導体装置 |
| US7642607B2 (en) * | 2005-08-10 | 2010-01-05 | Taiwan Semiconductor Manufacturing Company, Ltd. | MOS devices with reduced recess on substrate surface |
| US7449753B2 (en) * | 2006-04-10 | 2008-11-11 | Taiwan Semiconductor Manufacturing Company, Ltd. | Write margin improvement for SRAM cells with SiGe stressors |
| US20070298557A1 (en) * | 2006-06-22 | 2007-12-27 | Chun-Feng Nieh | Junction leakage reduction in SiGe process by tilt implantation |
| US7482211B2 (en) * | 2006-06-22 | 2009-01-27 | Taiwan Semiconductor Manufacturing Company, Ltd. | Junction leakage reduction in SiGe process by implantation |
| US8008157B2 (en) * | 2006-10-27 | 2011-08-30 | Taiwan Semiconductor Manufacturing Company, Ltd. | CMOS device with raised source and drain regions |
| CN101641770B (zh) * | 2007-03-28 | 2012-03-07 | 富士通半导体股份有限公司 | 半导体器件及其制造方法 |
-
2007
- 2007-02-28 US US11/680,181 patent/US7572706B2/en not_active Expired - Fee Related
-
2008
- 2008-01-31 TW TW097103705A patent/TWI436431B/zh not_active IP Right Cessation
- 2008-02-11 JP JP2009551780A patent/JP5559547B2/ja not_active Expired - Fee Related
- 2008-02-11 CN CN2008800064701A patent/CN101622713B/zh not_active Expired - Fee Related
- 2008-02-11 WO PCT/US2008/053563 patent/WO2008106304A1/en not_active Ceased
- 2008-02-11 EP EP08729512A patent/EP2115778A4/en not_active Withdrawn
- 2008-02-11 KR KR1020097017872A patent/KR101399208B1/ko not_active Expired - Fee Related
Also Published As
| Publication number | Publication date |
|---|---|
| KR101399208B1 (ko) | 2014-05-27 |
| KR20090125757A (ko) | 2009-12-07 |
| US7572706B2 (en) | 2009-08-11 |
| CN101622713B (zh) | 2013-10-23 |
| EP2115778A4 (en) | 2011-11-02 |
| EP2115778A1 (en) | 2009-11-11 |
| US20080203449A1 (en) | 2008-08-28 |
| CN101622713A (zh) | 2010-01-06 |
| WO2008106304A1 (en) | 2008-09-04 |
| TW200847299A (en) | 2008-12-01 |
| JP2010520620A (ja) | 2010-06-10 |
| JP5559547B2 (ja) | 2014-07-23 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| MM4A | Annulment or lapse of patent due to non-payment of fees |