CN101622713B - 源/漏应力器及其方法 - Google Patents

源/漏应力器及其方法 Download PDF

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Publication number
CN101622713B
CN101622713B CN2008800064701A CN200880006470A CN101622713B CN 101622713 B CN101622713 B CN 101622713B CN 2008800064701 A CN2008800064701 A CN 2008800064701A CN 200880006470 A CN200880006470 A CN 200880006470A CN 101622713 B CN101622713 B CN 101622713B
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semiconductor device
type
semi
conducting material
source
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Expired - Fee Related
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CN2008800064701A
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English (en)
Chinese (zh)
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CN101622713A (zh
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张达
布赖恩·A·温斯特德
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NXP USA Inc
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Freescale Semiconductor Inc
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/26—Bombardment with radiation
    • H01L21/263—Bombardment with radiation with high-energy radiation
    • H01L21/265—Bombardment with radiation with high-energy radiation producing ion implantation
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
    • H10D30/027—Manufacture or treatment of FETs having insulated gates [IGFET] of lateral single-gate IGFETs
    • H10D30/0275—Manufacture or treatment of FETs having insulated gates [IGFET] of lateral single-gate IGFETs forming single crystalline semiconductor source or drain regions resulting in recessed gates, e.g. forming raised source or drain regions
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/26—Bombardment with radiation
    • H01L21/263—Bombardment with radiation with high-energy radiation
    • H01L21/265—Bombardment with radiation with high-energy radiation producing ion implantation
    • H01L21/26586—Bombardment with radiation with high-energy radiation producing ion implantation characterised by the angle between the ion beam and the crystal planes or the main crystal surface
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
    • H10D30/0221—Manufacture or treatment of FETs having insulated gates [IGFET] having asymmetry in the channel direction, e.g. lateral high-voltage MISFETs having drain offset region or extended-drain MOSFETs [EDMOS]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/601—Insulated-gate field-effect transistors [IGFET] having lightly-doped drain or source extensions, e.g. LDD IGFETs or DDD IGFETs 
    • H10D30/603—Insulated-gate field-effect transistors [IGFET] having lightly-doped drain or source extensions, e.g. LDD IGFETs or DDD IGFETs  having asymmetry in the channel direction, e.g. lateral high-voltage MISFETs having drain offset region or extended drain IGFETs [EDMOS]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/791—Arrangements for exerting mechanical stress on the crystal lattice of the channel regions
    • H10D30/797—Arrangements for exerting mechanical stress on the crystal lattice of the channel regions being in source or drain regions, e.g. SiGe source or drain
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/01—Manufacture or treatment
    • H10D64/025—Manufacture or treatment forming recessed gates, e.g. by using local oxidation
    • H10D64/027—Manufacture or treatment forming recessed gates, e.g. by using local oxidation by etching at gate locations
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
    • H10D30/0212—Manufacture or treatment of FETs having insulated gates [IGFET] using self-aligned silicidation
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
    • H10D30/031—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT]
    • H10D30/0321—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT] comprising silicon, e.g. amorphous silicon or polysilicon
    • H10D30/0323—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT] comprising silicon, e.g. amorphous silicon or polysilicon comprising monocrystalline silicon
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/01—Manufacture or treatment
    • H10D62/021—Forming source or drain recesses by etching e.g. recessing by etching and then refilling
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/01—Manufacture or treatment
    • H10D64/021—Manufacture or treatment using multiple gate spacer layers, e.g. bilayered sidewall spacers

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  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • High Energy & Nuclear Physics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Health & Medical Sciences (AREA)
  • Toxicology (AREA)
  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)
  • Thin Film Transistor (AREA)
CN2008800064701A 2007-02-28 2008-02-11 源/漏应力器及其方法 Expired - Fee Related CN101622713B (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US11/680,181 2007-02-28
US11/680,181 US7572706B2 (en) 2007-02-28 2007-02-28 Source/drain stressor and method therefor
PCT/US2008/053563 WO2008106304A1 (en) 2007-02-28 2008-02-11 Source/drain stressor and method therefor

Publications (2)

Publication Number Publication Date
CN101622713A CN101622713A (zh) 2010-01-06
CN101622713B true CN101622713B (zh) 2013-10-23

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CN2008800064701A Expired - Fee Related CN101622713B (zh) 2007-02-28 2008-02-11 源/漏应力器及其方法

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US (1) US7572706B2 (enExample)
EP (1) EP2115778A4 (enExample)
JP (1) JP5559547B2 (enExample)
KR (1) KR101399208B1 (enExample)
CN (1) CN101622713B (enExample)
TW (1) TWI436431B (enExample)
WO (1) WO2008106304A1 (enExample)

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US8080452B2 (en) 2006-08-01 2011-12-20 Nxp, B.V. Effecting selectivity of silicon or silicon-germanium deposition on a silicon or silicon-germanium substrate by doping
KR100746232B1 (ko) * 2006-08-25 2007-08-03 삼성전자주식회사 스트레인드 채널을 갖는 모스 트랜지스터 및 그 제조방법
US20080248598A1 (en) * 2007-04-09 2008-10-09 Rohit Pal Method and apparatus for determining characteristics of a stressed material using scatterometry
US7745847B2 (en) * 2007-08-09 2010-06-29 United Microelectronics Corp. Metal oxide semiconductor transistor
US20100102393A1 (en) * 2008-10-29 2010-04-29 Chartered Semiconductor Manufacturing, Ltd. Metal gate transistors
US8124487B2 (en) * 2008-12-22 2012-02-28 Varian Semiconductor Equipment Associates, Inc. Method for enhancing tensile stress and source/drain activation using Si:C
US20110049582A1 (en) * 2009-09-03 2011-03-03 International Business Machines Corporation Asymmetric source and drain stressor regions
US8928094B2 (en) * 2010-09-03 2015-01-06 Taiwan Semiconductor Manufacturing Company, Ltd. Strained asymmetric source/drain
CN102456739A (zh) * 2010-10-28 2012-05-16 中国科学院微电子研究所 半导体结构及其形成方法
CN102683385B (zh) * 2012-05-30 2014-12-24 清华大学 半导体结构及其形成方法
KR20140042460A (ko) * 2012-09-28 2014-04-07 삼성전자주식회사 반도체 소자
KR102137371B1 (ko) * 2013-10-29 2020-07-27 삼성전자 주식회사 반도체 장치 및 이의 제조 방법
CN106960838B (zh) * 2016-01-11 2019-07-02 中芯国际集成电路制造(上海)有限公司 静电保护器件及其形成方法
US10032868B2 (en) 2016-09-09 2018-07-24 Texas Instruments Incorporated High performance super-beta NPN (SBNPN)
CN114072544A (zh) * 2019-07-26 2022-02-18 应用材料公司 各向异性的外延生长

Citations (4)

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Publication number Priority date Publication date Assignee Title
US5427964A (en) * 1994-04-04 1995-06-27 Motorola, Inc. Insulated gate field effect transistor and method for fabricating
US20030080361A1 (en) * 2001-11-01 2003-05-01 Anand Murthy Semiconductor transistor having a stressed channel
US20050067662A1 (en) * 2003-09-29 2005-03-31 Samsung Electronics Co., Ltd. Transistor having a protruded drain and method of manufacturing the transistor
CN1708857A (zh) * 2002-10-30 2005-12-14 先进微装置公司 半导体组件及其制造方法

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JPS6313378A (ja) * 1986-07-04 1988-01-20 Nippon Telegr & Teleph Corp <Ntt> 半導体装置およびその製造方法
EP0412701B1 (en) * 1989-07-31 1996-09-25 Canon Kabushiki Kaisha Thin film transistor and preparation thereof
JPH0423329A (ja) * 1990-05-14 1992-01-27 Fujitsu Ltd 半導体装置の製造方法
JPH0992825A (ja) * 1995-09-26 1997-04-04 Fuji Film Micro Device Kk 半導体装置およびその製造方法
JP2004241755A (ja) * 2003-01-15 2004-08-26 Renesas Technology Corp 半導体装置
US20040262683A1 (en) * 2003-06-27 2004-12-30 Bohr Mark T. PMOS transistor strain optimization with raised junction regions
US7244654B2 (en) * 2003-12-31 2007-07-17 Texas Instruments Incorporated Drive current improvement from recessed SiGe incorporation close to gate
JP4837902B2 (ja) * 2004-06-24 2011-12-14 富士通セミコンダクター株式会社 半導体装置
US7642607B2 (en) * 2005-08-10 2010-01-05 Taiwan Semiconductor Manufacturing Company, Ltd. MOS devices with reduced recess on substrate surface
US7449753B2 (en) * 2006-04-10 2008-11-11 Taiwan Semiconductor Manufacturing Company, Ltd. Write margin improvement for SRAM cells with SiGe stressors
US20070298557A1 (en) * 2006-06-22 2007-12-27 Chun-Feng Nieh Junction leakage reduction in SiGe process by tilt implantation
US7482211B2 (en) * 2006-06-22 2009-01-27 Taiwan Semiconductor Manufacturing Company, Ltd. Junction leakage reduction in SiGe process by implantation
US8008157B2 (en) * 2006-10-27 2011-08-30 Taiwan Semiconductor Manufacturing Company, Ltd. CMOS device with raised source and drain regions
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Patent Citations (4)

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US5427964A (en) * 1994-04-04 1995-06-27 Motorola, Inc. Insulated gate field effect transistor and method for fabricating
US20030080361A1 (en) * 2001-11-01 2003-05-01 Anand Murthy Semiconductor transistor having a stressed channel
CN1708857A (zh) * 2002-10-30 2005-12-14 先进微装置公司 半导体组件及其制造方法
US20050067662A1 (en) * 2003-09-29 2005-03-31 Samsung Electronics Co., Ltd. Transistor having a protruded drain and method of manufacturing the transistor

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Also Published As

Publication number Publication date
TWI436431B (zh) 2014-05-01
KR101399208B1 (ko) 2014-05-27
KR20090125757A (ko) 2009-12-07
US7572706B2 (en) 2009-08-11
EP2115778A4 (en) 2011-11-02
EP2115778A1 (en) 2009-11-11
US20080203449A1 (en) 2008-08-28
CN101622713A (zh) 2010-01-06
WO2008106304A1 (en) 2008-09-04
TW200847299A (en) 2008-12-01
JP2010520620A (ja) 2010-06-10
JP5559547B2 (ja) 2014-07-23

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