CN101093804A - 半导体元件的形成方法 - Google Patents

半导体元件的形成方法 Download PDF

Info

Publication number
CN101093804A
CN101093804A CNA2007101011855A CN200710101185A CN101093804A CN 101093804 A CN101093804 A CN 101093804A CN A2007101011855 A CNA2007101011855 A CN A2007101011855A CN 200710101185 A CN200710101185 A CN 200710101185A CN 101093804 A CN101093804 A CN 101093804A
Authority
CN
China
Prior art keywords
stress riser
impurity
semiconductor
depth
formation method
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
CNA2007101011855A
Other languages
English (en)
Other versions
CN101093804B (zh
Inventor
聂俊峰
陈建豪
顾克强
李资良
陈世昌
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Taiwan Semiconductor Manufacturing Co TSMC Ltd
Original Assignee
Taiwan Semiconductor Manufacturing Co TSMC Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Taiwan Semiconductor Manufacturing Co TSMC Ltd filed Critical Taiwan Semiconductor Manufacturing Co TSMC Ltd
Publication of CN101093804A publication Critical patent/CN101093804A/zh
Application granted granted Critical
Publication of CN101093804B publication Critical patent/CN101093804B/zh
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Images

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76Unipolar devices, e.g. field effect transistors
    • H01L29/772Field effect transistors
    • H01L29/78Field effect transistors with field effect produced by an insulated gate
    • H01L29/7842Field effect transistors with field effect produced by an insulated gate means for exerting mechanical stress on the crystal lattice of the channel region, e.g. using a flexible substrate
    • H01L29/7848Field effect transistors with field effect produced by an insulated gate means for exerting mechanical stress on the crystal lattice of the channel region, e.g. using a flexible substrate the means being located in the source/drain region, e.g. SiGe source and drain
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/10Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode not carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
    • H01L29/107Substrate region of field-effect devices
    • H01L29/1075Substrate region of field-effect devices of field-effect transistors
    • H01L29/1079Substrate region of field-effect devices of field-effect transistors with insulated gate
    • H01L29/1083Substrate region of field-effect devices of field-effect transistors with insulated gate with an inactive supplementary region, e.g. for preventing punch-through, improving capacity effect or leakage current
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/66007Multistep manufacturing processes
    • H01L29/66075Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
    • H01L29/66227Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
    • H01L29/66409Unipolar field-effect transistors
    • H01L29/66477Unipolar field-effect transistors with an insulated gate, i.e. MISFET
    • H01L29/6653Unipolar field-effect transistors with an insulated gate, i.e. MISFET using the removal of at least part of spacer, e.g. disposable spacer
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/66007Multistep manufacturing processes
    • H01L29/66075Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
    • H01L29/66227Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
    • H01L29/66409Unipolar field-effect transistors
    • H01L29/66477Unipolar field-effect transistors with an insulated gate, i.e. MISFET
    • H01L29/66568Lateral single gate silicon transistors
    • H01L29/66636Lateral single gate silicon transistors with source or drain recessed by etching or first recessed by etching and then refilled
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76Unipolar devices, e.g. field effect transistors
    • H01L29/772Field effect transistors
    • H01L29/78Field effect transistors with field effect produced by an insulated gate
    • H01L29/7833Field effect transistors with field effect produced by an insulated gate with lightly doped drain or source extension, e.g. LDD MOSFET's; DDD MOSFET's
    • H01L29/7834Field effect transistors with field effect produced by an insulated gate with lightly doped drain or source extension, e.g. LDD MOSFET's; DDD MOSFET's with a non-planar structure, e.g. the gate or the source or the drain being non-planar
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/12Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
    • H01L29/16Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only elements of Group IV of the Periodic Table
    • H01L29/161Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only elements of Group IV of the Periodic Table including two or more of the elements provided for in group H01L29/16, e.g. alloys
    • H01L29/165Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only elements of Group IV of the Periodic Table including two or more of the elements provided for in group H01L29/16, e.g. alloys in different semiconductor regions, e.g. heterojunctions

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • General Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Manufacturing & Machinery (AREA)
  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)

Abstract

本发明提供一种半导体元件的形成方法。此方法包括提供半导体基板,形成栅极介电层于半导体基板上,形成栅极于栅极介电层之上,形成应力源于邻近栅极边缘的半导体基板中,且在形成应力源程序后布植杂质。此杂质较佳选自下列组成的组:IV族元素、惰性元素、氟、氮及上述的组合。

Description

半导体元件的形成方法
技术领域
本发明涉及半导体元件,特别涉及金-氧半导体元件的结构及其形成方法。
背景技术
近数十年来,半导体行业持续致力于缩小元件尺寸,增加半导体元件的速度、效能、密度以及降低单位成本。根据晶体管的设计及其内部特性,若调整栅极下方的源/漏极间的通道长度可改变通道区的电阻,由此影响晶体管的效能。特别是,缩短通道长度可降低晶体管中源极至漏极的电阻,因此当其他参数维持一定时,可增加源/漏极间的电流。
为了进一步增进MOS元件的效能,可对MOS元件中的通道施加应力,以增加载子的迁移效率。一般来说,最好对NMOS元件的通道区施加源极至漏极方向的张应力,且对PMOS元件的通道区施加源极至漏极方向的压应力。
目前半导体行业通常在源/漏极区成长SiGe应力源以对PMOS元件的通道区施加压应力。其方法包括形成栅极堆迭于半导体基板上,形成栅极间隙壁于栅极堆迭的侧壁,形成凹槽于硅基板中并对准栅极间隙壁,磊晶成长SiGe应力源于凹槽中。因为SiGe的晶格晶距比硅大,因此其可对源极SiGe应力源及漏极SiGe应力源间的通道区施加压应力。
发明内容
本发明提供一种半导体元件的形成方法,包括提供半导体基板,形成栅极介电层于半导体基板之上,形成栅极于该栅极介电层之上,形成间隙壁于邻接栅极的边缘的半导体基板中,以及在形成该应力源后布植杂质,其中该杂质选自下列组成的组:IV族元素、惰性元素、氟、氮及上述的组合。
本发明还提供一种半导体元件的形成方法,包括提供半导体基板,形成栅极介电层于该半导体基板之上,形成栅极于该栅极介电层之上,形成虚设间隙壁于该栅极及该栅极介层的边缘,沿着该虚设间隙壁的侧壁形成凹槽于该半导体基板中,磊晶成长SiGe于该凹槽中,以形成SiGe应力源,移除该虚设间隙壁,布植杂质于该SiGe应力源中,形成轻掺杂源/漏极区邻接该栅极;形成间隙壁于该栅极及该栅极介层的边缘,以及形成源/漏极区邻接该栅极。
本发明还提供一种半导体元件,包括半导体基板,栅极介电层,于该半导体基板之上,栅极,于该栅极介电层之上,以及SiGe应力源于邻接栅极的边缘的半导体基板中,此SiGe应力源包括p型杂质及含额外杂质的布植区,其中此额外杂质选自下列组成的组:氮、氟、IV族元素、惰性元素及上述组合。
本发明通过在形成应力源后形成布植区,可有效降低MOS元件的漏电流。
为了让本发明的上述和其他目的、特征和优点能更明显易懂,下文特举较佳实施例,并配合所附图示作详细说明。
附图说明
图1显示栅极堆迭形于基板100之上。
图2显示毯覆形成虚设层。
图3显示图案化毯覆氧化层及氮化层以形成栅极间隙壁。
图4显示形成磊晶区。
图5显示移除间隙壁及硬式罩幕层。
图6显示形成轻掺杂源/漏极区。
图7显示形成间隙壁。
图8显示布植p型杂质及形成硅化区。
图9显示本发明可有效改善漏电流的情况。
附图主要符号说明
100~基板;4~栅极;2~栅极介电层;6~硬式罩幕;10~毯覆氧化层;12~氮化层;14~栅极间隙壁;16~凹槽;18~磊晶区;19~布植区;D1、D2~深度;20~界面;22~箭头;24~轻掺杂源/漏极区;25~口袋/晕状区;26~间隙壁;28~重源/漏极区;T2、T1~厚度;30~硅化区;40、42~线。
具体实施方式
本发明提供一种含SiGe应力源的PMOS元件的形成方法。参照图1,栅极堆迭形于基板100之上,其较佳为硅或其他公知材质,如硅上绝缘层(SOI)。在一实施例中,可使用低锗硅比的SiGe基板。形成浅沟槽隔离区以隔离各元件区。此栅极堆迭包括栅极4于栅极介电层2之上。此栅极堆迭较佳以硬式罩幕6作为罩幕,其材质可为氧化物、氮化硅、氮氧化硅及上述的组合。
参照图2,毯覆形成虚设层。在一较佳实施例中,虚设层包括毯覆氧化层10及氮化层12。在另一实施例中,虚设层包括单层或复合层,其较佳包括氧化物、氮化硅、氮氧化硅和/或其他介电材质。此虚设层可以公知的技术形成,例如,电浆蚀刻化学气相沉积(PECVD)、低压化学气相沉积(LPCVD)、次大气压化学气相沉积(SACVD)等。
参照图3,图案化毯覆氧化层10及氮化层12以形成栅极间隙壁14,因此栅极间隙壁包括毯覆氧化部分及氮化部分。接着,沿着栅极间隙壁14形成凹槽16于基板100中,较佳为异向性蚀刻。在90nm工艺中,凹槽16的深度较佳介于约500至1000之间,更佳介于约700至900。
参照图4,以选择性磊晶成长半导体材料,较佳为SiGe,于凹槽16中以形成磊晶区18。半导体材料的晶格间距(lattice spacing)大于基板100。在磊晶成长时,可掺杂适合的杂质,但也可不掺杂。在一较佳实施例中,基板100为硅基板,SiGe成长于凹槽16中。在另一较佳实施例中,基板100包括SiGe,磊晶区18的锗含量较佳大于基板100,因此磊晶区18的晶格间隔大于基板的晶格间距。磊晶区18可对通道施加压应力。上述的磊晶区18以下亦称为SiGe应力源18。
参照图5,移除间隙壁14及硬式罩幕层6。在一实施例中,通过磷酸蚀刻来移除间隙壁14及硬式罩幕6的氮化硅区,且以稀释的氢氟酸来移除间隙壁14的毯覆氧化区。
以布植程序22形成布植区19。在一较佳实施例中,布植IV族元素,例如,碳、硅及锗。在另一实施例中,使用惰性气体,例如,氖、氩、氪、氙和/或氡。在另一实施例中,可布植氮和/或氟。应注意的是,不适当的布植会破坏SiGe应力源18产生的通道应力,且必须非常小心控制布植的能量及剂量。布植区的深度D1较佳小于SiGe应力源18的深度D2,且更佳小于SiGe应力源18深度的50%,因此不会破坏SiGe应力源18及下方基板100间的界面20接合。此外,深度D1较佳大于后续形成的轻源/漏极区及口袋/晕状区的深度,虽然D1深度亦可更深或更浅。此布植能量较佳小于约4keV,更佳介于约2keV至4keV之间,且布植剂量较佳介于约1E14/cm2至1E15/cm2之间,更佳介于5E14/cm2至7E14/cm2。因此,布植杂质的浓度小于约1E21/cm3,更佳介于1E20/cm3至5E20/cm3之间。
此外,上述所列的掺杂物,例如,碳,会降低晶格间距,而减少通道区的应力。因此,布植掺杂物的含量较佳小于锗含量。在一实施例中,布植区19中的布植掺杂物的浓度与锗浓度的比例小于约0.5%,较佳小于约0.1%。
一般而言,在布植NMOS区的源/漏极区时,较佳进行一预非晶化布植(以下简称PAI)以降低掺杂物通道效应(dopant channeling effect),且可增加掺杂物活性。如果使用相同的掺杂物,则SiGe应力源的布植较佳与NOMS的PAI同时进行。
参照图6所示,形成轻掺杂源/漏极区24。较佳以p型杂质,如硼和/或铟布植于基板100及SiGe应力源18中,另以一n型杂质,如磷和/或砷形成口袋/晕状区25。由于形成轻掺杂源/漏极区24与口袋/晕状区25的方法为公知技术,在此不再赘述,且本领域技术人员知道,形成轻掺杂源/漏极区24与布植区19的次序可颠倒。此外,在移除虚设间隙壁14前可先形成布植区19,使布植区19实质上位于SiGe应力源18内。
参照图7,形成间隙壁26。毯覆形成毯覆氧化层及氮化层。图案化氧化层及氮化层以形成间隙壁26。间隙壁26较佳具有厚度T2,且厚度T2较佳大于虚设间隙壁14的厚度T1(参照图4),但厚度T2也可相同或小于T1。
参照图8,较佳布植p型杂质,例如,硼和/或铟来形成深源/漏极区28。且深源/漏极区28实质上对准间隙壁26的边缘。图8也显示形成硅化区30,硅化区30较佳先沉积薄金属层,例如,钛、钴、镍、钨或其类似物于元件之上,包括SiGe应力源18及栅极4的曝露表面。接着,加热此基板使金属与硅接触的地方产生硅化反应。在硅化反应后,硅化物金属层形成于硅与金属之间,并选择性移除未反应的金属。
在形成SiGe应力源后形成布植区可有效地降低PMOS元件的漏电流。图9显示本发明可有效改善漏电流的情况。X轴表示以不同材质、结构、方位所形成的多个元件。Y轴表示漏电流。线40为未形成布植区于SiGe应力源的传统元件。线42为形成布植区于SiGe应力源上的元件,其中多个42表示以不同的布植种类、能量及剂量所形成的元件。结果显示,当于SiGe应力源形成布植区时,漏电流可改善约1倍以上,但其机制仍不明了,有可能与改善SiGe应力源表面有关。若SiGe应力源表面粗糙,具有凸出部分与凹陷部分,且若其粗糙的程度够大,则其后续形成的硅化物(或锗-硅化物)会趋向SiGe应力源的表面形态。形成于SiGe凹陷部分的硅化物接近于源/漏极的接合区,可能是造成漏电流的主因。通过布植程序,可减少凸出部分与凹陷部分的垂直距离,且凹陷部分可趋近于凸出部分(同时凸出部分也趋近于凹陷部分)。因此可降低漏电流的情况。
此外,于SiGe应力源上进行布植程序也可减少漏极引发能障下降效应(drain-induced barrier lowering,DIBL)。实验结果显示,当有布植碳于SiGe应力源的MOS元件时,能障下降效应比未布植的MOS元件小。在栅极尺寸约0.65μm时,可减少约10mV或6%的能障下降效应。
虽然本发明已以较佳实施例公开如上,但其并非用以限定本发明,本领域技术人员在不脱离本发明的精神和范围内,当可作些许的更动与润饰,因此本发明的保护范围应以所附的权利要求书所确定的范围为准。

Claims (16)

1.一种半导体元件的形成方法,包括
提供半导体基板;
形成栅极介电层于该半导体基板之上;
形成栅极于该栅极介电层之上;
形成应力源于邻近该栅极边缘的半导体基板中,以及
在形成该应力源后布植杂质,其中该杂质选自下列组成的组:IV族元素、惰性元素、氟、氮及上述的组合。
2.如权利要求1所述的半导体元件的形成方法,其中该半导体基板为PMOS元件,且该应力源包括SiGe。
3.如权利要求1所述的半导体元件的形成方法,其中杂质包括碳。
4.如权利要求1所述的半导体元件的形成方法,其中该布植程序的能量小于约4 keV。
5.如权利要求1所述的半导体元件的形成方法,其中该布植程序的剂量介于约1E14/cm2至1E14/cm2之间。
6.如权利要求1所述的半导体元件的形成方法,其中该杂质布植至一深度,且该深度小于应力源的深度。
7.如权利要求6所述的半导体元件的形成方法,其中该杂质的深度小于该应力源深度的50%。
8.如权利要求1所述的半导体元件的形成方法,还包括:
形成轻掺杂源/漏极区于该应力源的一部分中;
形成n型口袋/晕状区,以及
形成重掺杂源/漏极区于该应力源的至少一部分中。
9.如权利要求8所述的半导体元件的形成方法,其中该应力源形成之后,再形成该轻掺杂源/漏极区。
10.如权利要求8所述的半导体元件的形成方法,其中该应力源形成之前,先形成该轻掺杂源/漏极区。
11.一种半导体结构,包括
半导体基板;
栅极介电层,形成于该半导体基板上;
栅极,形成于该栅极介电层上,以及
应力源,形成于邻接栅极边缘的半导基板中,其中该应力源包括杂质布植区,其中该杂质选自下列组成的组:氮、氟、IV族元素、惰性元素及上述组合。
12.如权利要求11所述的半导体结构,还包括n型口袋/晕状区于该半导体基板中,以及轻掺杂源/漏极区与重掺杂源/漏极区于该应力源的至少一部分中。
13.如权利要求11所述的半导体结构,其中该杂质包括碳。
14.如权利要求11所述的半导体结构,该杂质的深度小于该应力源的深度。
15.如权利要求14所述的半导体结构,其中该杂质的深度小于该应力源深度的50%。
16.如权利要求14所述的半导体结构,其中该杂质选自下列组成的组:碳、硅、锗、氮、氟、氖、氩、氪、氙、氡及上述的组合。
CN2007101011855A 2006-06-22 2007-05-09 半导体元件的形成方法 Expired - Fee Related CN101093804B (zh)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
US81568406P 2006-06-22 2006-06-22
US60/815,684 2006-06-22
US11/523,274 US7482211B2 (en) 2006-06-22 2006-09-19 Junction leakage reduction in SiGe process by implantation
US11/523,274 2006-09-19

Publications (2)

Publication Number Publication Date
CN101093804A true CN101093804A (zh) 2007-12-26
CN101093804B CN101093804B (zh) 2012-02-01

Family

ID=38874032

Family Applications (1)

Application Number Title Priority Date Filing Date
CN2007101011855A Expired - Fee Related CN101093804B (zh) 2006-06-22 2007-05-09 半导体元件的形成方法

Country Status (3)

Country Link
US (1) US7482211B2 (zh)
CN (1) CN101093804B (zh)
TW (1) TWI335626B (zh)

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102479711A (zh) * 2010-11-25 2012-05-30 中芯国际集成电路制造(北京)有限公司 Pmos晶体管的形成方法
CN103155123A (zh) * 2010-10-15 2013-06-12 国际商业机器公司 具有SiGe沟道的pFET结分布的结构和方法
CN103187276A (zh) * 2011-12-27 2013-07-03 中芯国际集成电路制造(上海)有限公司 n型MOS场效应管及形成方法,半导体器件及形成方法
US8822293B2 (en) 2008-03-13 2014-09-02 Taiwan Semiconductor Manufacturing Company, Ltd. Self-aligned halo/pocket implantation for reducing leakage and source/drain resistance in MOS devices
WO2015196993A1 (zh) * 2014-06-26 2015-12-30 无锡华润上华半导体有限公司 金属氧化物半导体场器件制造方法
CN104051506B (zh) * 2013-03-15 2017-08-08 新加坡商格罗方德半导体私人有限公司 氟掺杂信道硅锗层
CN109285765A (zh) * 2017-07-19 2019-01-29 Asm Ip控股有限公司 沉积iv族半导体的方法及相关的半导体器件结构

Families Citing this family (257)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20070298557A1 (en) * 2006-06-22 2007-12-27 Chun-Feng Nieh Junction leakage reduction in SiGe process by tilt implantation
US20080119025A1 (en) * 2006-11-21 2008-05-22 O Sung Kwon Method of making a strained semiconductor device
US7538387B2 (en) * 2006-12-29 2009-05-26 Taiwan Semiconductor Manufacturing Company, Ltd. Stack SiGe for short channel improvement
US7572706B2 (en) * 2007-02-28 2009-08-11 Freescale Semiconductor, Inc. Source/drain stressor and method therefor
US8664073B2 (en) 2007-03-28 2014-03-04 United Microelectronics Corp. Method for fabricating field-effect transistor
US7888223B2 (en) 2007-03-28 2011-02-15 United Microelectronics Corp. Method for fabricating P-channel field-effect transistor (FET)
US20090152590A1 (en) * 2007-12-13 2009-06-18 International Business Machines Corporation Method and structure for semiconductor devices with silicon-germanium deposits
US20090170256A1 (en) * 2007-12-26 2009-07-02 Texas Instruments Incoporated Annealing method for sige process
US20090166625A1 (en) 2007-12-28 2009-07-02 United Microelectronics Corp. Mos device structure
TWI387011B (zh) * 2008-01-07 2013-02-21 United Microelectronics Corp 金氧半導體元件的形成方法與其結構
US20090242989A1 (en) * 2008-03-25 2009-10-01 Chan Kevin K Complementary metal-oxide-semiconductor device with embedded stressor
US20090294872A1 (en) * 2008-05-29 2009-12-03 International Business Machines Corporation Ge/Xe IMPLANTS TO REDUCE JUNCTION CAPACITANCE AND LEAKAGE
US20100047985A1 (en) * 2008-08-19 2010-02-25 Advanced Micro Devices, Inc. Method for fabricating a semiconductor device with self-aligned stressor and extension regions
US8143131B2 (en) 2009-03-31 2012-03-27 Taiwan Semiconductor Manufacturing Company, Ltd. Method of fabricating spacers in a strained semiconductor device
KR101050405B1 (ko) * 2009-07-03 2011-07-19 주식회사 하이닉스반도체 스트레인드채널을 갖는 반도체장치 제조 방법
US8368127B2 (en) * 2009-10-08 2013-02-05 Globalfoundries Singapore Pte., Ltd. Method of fabricating a silicon tunneling field effect transistor (TFET) with high drive current
US8502316B2 (en) * 2010-02-11 2013-08-06 Taiwan Semiconductor Manufacturing Company, Ltd. Self-aligned two-step STI formation through dummy poly removal
US8440519B2 (en) * 2010-05-12 2013-05-14 International Business Machines Corporation Semiconductor structures using replacement gate and methods of manufacture
KR20120107762A (ko) * 2011-03-22 2012-10-04 삼성전자주식회사 반도체 소자의 제조 방법
KR20120133652A (ko) * 2011-05-31 2012-12-11 삼성전자주식회사 반도체 소자의 제조 방법
US20130023129A1 (en) 2011-07-20 2013-01-24 Asm America, Inc. Pressure transmitter for a semiconductor processing environment
US8629037B2 (en) 2011-09-24 2014-01-14 Taiwan Semiconductor Manufacturing Company, Ltd. Forming a protective film on a back side of a silicon wafer in a III-V family fabrication process
US8629013B2 (en) 2011-10-14 2014-01-14 Taiwan Semiconductor Manufacturing Company, Ltd. Junction leakage reduction through implantation
US9136348B2 (en) 2012-03-12 2015-09-15 United Microelectronics Corp. Semiconductor structure and fabrication method thereof
US10714315B2 (en) 2012-10-12 2020-07-14 Asm Ip Holdings B.V. Semiconductor reaction chamber showerhead
US20160376700A1 (en) 2013-02-01 2016-12-29 Asm Ip Holding B.V. System for treatment of deposition reactor
US11015245B2 (en) 2014-03-19 2021-05-25 Asm Ip Holding B.V. Gas-phase reactor and system having exhaust plenum and components thereof
US10941490B2 (en) 2014-10-07 2021-03-09 Asm Ip Holding B.V. Multiple temperature range susceptor, assembly, reactor and system including the susceptor, and methods of using the same
US9620592B2 (en) 2015-02-12 2017-04-11 International Business Machines Corporation Doped zinc oxide and n-doping to reduce junction leakage
US9653570B2 (en) 2015-02-12 2017-05-16 International Business Machines Corporation Junction interlayer dielectric for reducing leakage current in semiconductor devices
US10276355B2 (en) 2015-03-12 2019-04-30 Asm Ip Holding B.V. Multi-zone reactor, system including the reactor, and method of using the same
US10458018B2 (en) 2015-06-26 2019-10-29 Asm Ip Holding B.V. Structures including metal carbide material, devices including the structures, and methods of forming same
US10211308B2 (en) 2015-10-21 2019-02-19 Asm Ip Holding B.V. NbMC layers
US11139308B2 (en) 2015-12-29 2021-10-05 Asm Ip Holding B.V. Atomic layer deposition of III-V compounds to form V-NAND devices
US10529554B2 (en) 2016-02-19 2020-01-07 Asm Ip Holding B.V. Method for forming silicon nitride film selectively on sidewalls or flat surfaces of trenches
US10367080B2 (en) 2016-05-02 2019-07-30 Asm Ip Holding B.V. Method of forming a germanium oxynitride film
US11453943B2 (en) 2016-05-25 2022-09-27 Asm Ip Holding B.V. Method for forming carbon-containing silicon/metal oxide or nitride film by ALD using silicon precursor and hydrocarbon precursor
US10612137B2 (en) 2016-07-08 2020-04-07 Asm Ip Holdings B.V. Organic reactants for atomic layer deposition
US9859151B1 (en) 2016-07-08 2018-01-02 Asm Ip Holding B.V. Selective film deposition method to form air gaps
US9887082B1 (en) 2016-07-28 2018-02-06 Asm Ip Holding B.V. Method and apparatus for filling a gap
US9812320B1 (en) 2016-07-28 2017-11-07 Asm Ip Holding B.V. Method and apparatus for filling a gap
KR102532607B1 (ko) 2016-07-28 2023-05-15 에이에스엠 아이피 홀딩 비.브이. 기판 가공 장치 및 그 동작 방법
US11532757B2 (en) 2016-10-27 2022-12-20 Asm Ip Holding B.V. Deposition of charge trapping layers
US10714350B2 (en) 2016-11-01 2020-07-14 ASM IP Holdings, B.V. Methods for forming a transition metal niobium nitride film on a substrate by atomic layer deposition and related semiconductor device structures
KR102546317B1 (ko) 2016-11-15 2023-06-21 에이에스엠 아이피 홀딩 비.브이. 기체 공급 유닛 및 이를 포함하는 기판 처리 장치
KR20180068582A (ko) 2016-12-14 2018-06-22 에이에스엠 아이피 홀딩 비.브이. 기판 처리 장치
US11581186B2 (en) 2016-12-15 2023-02-14 Asm Ip Holding B.V. Sequential infiltration synthesis apparatus
US11447861B2 (en) 2016-12-15 2022-09-20 Asm Ip Holding B.V. Sequential infiltration synthesis apparatus and a method of forming a patterned structure
KR102700194B1 (ko) 2016-12-19 2024-08-28 에이에스엠 아이피 홀딩 비.브이. 기판 처리 장치
US10269558B2 (en) 2016-12-22 2019-04-23 Asm Ip Holding B.V. Method of forming a structure on a substrate
US11390950B2 (en) 2017-01-10 2022-07-19 Asm Ip Holding B.V. Reactor system and method to reduce residue buildup during a film deposition process
US10468261B2 (en) 2017-02-15 2019-11-05 Asm Ip Holding B.V. Methods for forming a metallic film on a substrate by cyclical deposition and related semiconductor device structures
US10529563B2 (en) 2017-03-29 2020-01-07 Asm Ip Holdings B.V. Method for forming doped metal oxide films on a substrate by cyclical deposition and related semiconductor device structures
US10770286B2 (en) 2017-05-08 2020-09-08 Asm Ip Holdings B.V. Methods for selectively forming a silicon nitride film on a substrate and related semiconductor device structures
US12040200B2 (en) 2017-06-20 2024-07-16 Asm Ip Holding B.V. Semiconductor processing apparatus and methods for calibrating a semiconductor processing apparatus
US11306395B2 (en) 2017-06-28 2022-04-19 Asm Ip Holding B.V. Methods for depositing a transition metal nitride film on a substrate by atomic layer deposition and related deposition apparatus
KR20190009245A (ko) 2017-07-18 2019-01-28 에이에스엠 아이피 홀딩 비.브이. 반도체 소자 구조물 형성 방법 및 관련된 반도체 소자 구조물
US11018002B2 (en) 2017-07-19 2021-05-25 Asm Ip Holding B.V. Method for selectively depositing a Group IV semiconductor and related semiconductor device structures
US11374112B2 (en) 2017-07-19 2022-06-28 Asm Ip Holding B.V. Method for depositing a group IV semiconductor and related semiconductor device structures
US10590535B2 (en) 2017-07-26 2020-03-17 Asm Ip Holdings B.V. Chemical treatment, deposition and/or infiltration apparatus and method for using the same
US10692741B2 (en) 2017-08-08 2020-06-23 Asm Ip Holdings B.V. Radiation shield
US10770336B2 (en) 2017-08-08 2020-09-08 Asm Ip Holding B.V. Substrate lift mechanism and reactor including same
US11139191B2 (en) 2017-08-09 2021-10-05 Asm Ip Holding B.V. Storage apparatus for storing cassettes for substrates and processing apparatus equipped therewith
US11769682B2 (en) 2017-08-09 2023-09-26 Asm Ip Holding B.V. Storage apparatus for storing cassettes for substrates and processing apparatus equipped therewith
US11830730B2 (en) 2017-08-29 2023-11-28 Asm Ip Holding B.V. Layer forming method and apparatus
US11295980B2 (en) 2017-08-30 2022-04-05 Asm Ip Holding B.V. Methods for depositing a molybdenum metal film over a dielectric surface of a substrate by a cyclical deposition process and related semiconductor device structures
KR102491945B1 (ko) 2017-08-30 2023-01-26 에이에스엠 아이피 홀딩 비.브이. 기판 처리 장치
US11056344B2 (en) 2017-08-30 2021-07-06 Asm Ip Holding B.V. Layer forming method
US10658205B2 (en) 2017-09-28 2020-05-19 Asm Ip Holdings B.V. Chemical dispensing apparatus and methods for dispensing a chemical to a reaction chamber
US10403504B2 (en) 2017-10-05 2019-09-03 Asm Ip Holding B.V. Method for selectively depositing a metallic film on a substrate
US10923344B2 (en) 2017-10-30 2021-02-16 Asm Ip Holding B.V. Methods for forming a semiconductor structure and related semiconductor structures
US11022879B2 (en) 2017-11-24 2021-06-01 Asm Ip Holding B.V. Method of forming an enhanced unexposed photoresist layer
WO2019103610A1 (en) 2017-11-27 2019-05-31 Asm Ip Holding B.V. Apparatus including a clean mini environment
JP7214724B2 (ja) 2017-11-27 2023-01-30 エーエスエム アイピー ホールディング ビー.ブイ. バッチ炉で利用されるウェハカセットを収納するための収納装置
US10872771B2 (en) 2018-01-16 2020-12-22 Asm Ip Holding B. V. Method for depositing a material film on a substrate within a reaction chamber by a cyclical deposition process and related device structures
CN111630203A (zh) 2018-01-19 2020-09-04 Asm Ip私人控股有限公司 通过等离子体辅助沉积来沉积间隙填充层的方法
TWI799494B (zh) 2018-01-19 2023-04-21 荷蘭商Asm 智慧財產控股公司 沈積方法
US11081345B2 (en) 2018-02-06 2021-08-03 Asm Ip Holding B.V. Method of post-deposition treatment for silicon oxide film
US10896820B2 (en) 2018-02-14 2021-01-19 Asm Ip Holding B.V. Method for depositing a ruthenium-containing film on a substrate by a cyclical deposition process
JP7124098B2 (ja) 2018-02-14 2022-08-23 エーエスエム・アイピー・ホールディング・ベー・フェー 周期的堆積プロセスにより基材上にルテニウム含有膜を堆積させる方法
KR102636427B1 (ko) 2018-02-20 2024-02-13 에이에스엠 아이피 홀딩 비.브이. 기판 처리 방법 및 장치
US10975470B2 (en) 2018-02-23 2021-04-13 Asm Ip Holding B.V. Apparatus for detecting or monitoring for a chemical precursor in a high temperature environment
US11473195B2 (en) 2018-03-01 2022-10-18 Asm Ip Holding B.V. Semiconductor processing apparatus and a method for processing a substrate
US11629406B2 (en) 2018-03-09 2023-04-18 Asm Ip Holding B.V. Semiconductor processing apparatus comprising one or more pyrometers for measuring a temperature of a substrate during transfer of the substrate
US11114283B2 (en) 2018-03-16 2021-09-07 Asm Ip Holding B.V. Reactor, system including the reactor, and methods of manufacturing and using same
KR102646467B1 (ko) 2018-03-27 2024-03-11 에이에스엠 아이피 홀딩 비.브이. 기판 상에 전극을 형성하는 방법 및 전극을 포함하는 반도체 소자 구조
US11088002B2 (en) 2018-03-29 2021-08-10 Asm Ip Holding B.V. Substrate rack and a substrate processing system and method
US11230766B2 (en) 2018-03-29 2022-01-25 Asm Ip Holding B.V. Substrate processing apparatus and method
TWI843623B (zh) 2018-05-08 2024-05-21 荷蘭商Asm Ip私人控股有限公司 藉由循環沉積製程於基板上沉積氧化物膜之方法及相關裝置結構
US12025484B2 (en) 2018-05-08 2024-07-02 Asm Ip Holding B.V. Thin film forming method
KR102596988B1 (ko) 2018-05-28 2023-10-31 에이에스엠 아이피 홀딩 비.브이. 기판 처리 방법 및 그에 의해 제조된 장치
TWI840362B (zh) 2018-06-04 2024-05-01 荷蘭商Asm Ip私人控股有限公司 水氣降低的晶圓處置腔室
US11718913B2 (en) 2018-06-04 2023-08-08 Asm Ip Holding B.V. Gas distribution system and reactor system including same
US11286562B2 (en) 2018-06-08 2022-03-29 Asm Ip Holding B.V. Gas-phase chemical reactor and method of using same
KR102568797B1 (ko) 2018-06-21 2023-08-21 에이에스엠 아이피 홀딩 비.브이. 기판 처리 시스템
US10797133B2 (en) 2018-06-21 2020-10-06 Asm Ip Holding B.V. Method for depositing a phosphorus doped silicon arsenide film and related semiconductor device structures
WO2020003000A1 (en) 2018-06-27 2020-01-02 Asm Ip Holding B.V. Cyclic deposition methods for forming metal-containing material and films and structures including the metal-containing material
TW202409324A (zh) 2018-06-27 2024-03-01 荷蘭商Asm Ip私人控股有限公司 用於形成含金屬材料之循環沉積製程
US10612136B2 (en) 2018-06-29 2020-04-07 ASM IP Holding, B.V. Temperature-controlled flange and reactor system including same
US10388513B1 (en) 2018-07-03 2019-08-20 Asm Ip Holding B.V. Method for depositing silicon-free carbon-containing film as gap-fill layer by pulse plasma-assisted deposition
US10755922B2 (en) 2018-07-03 2020-08-25 Asm Ip Holding B.V. Method for depositing silicon-free carbon-containing film as gap-fill layer by pulse plasma-assisted deposition
US11053591B2 (en) 2018-08-06 2021-07-06 Asm Ip Holding B.V. Multi-port gas injection system and reactor system including same
US11430674B2 (en) 2018-08-22 2022-08-30 Asm Ip Holding B.V. Sensor array, apparatus for dispensing a vapor phase reactant to a reaction chamber and related methods
KR102707956B1 (ko) 2018-09-11 2024-09-19 에이에스엠 아이피 홀딩 비.브이. 박막 증착 방법
US11024523B2 (en) 2018-09-11 2021-06-01 Asm Ip Holding B.V. Substrate processing apparatus and method
US11049751B2 (en) 2018-09-14 2021-06-29 Asm Ip Holding B.V. Cassette supply system to store and handle cassettes and processing apparatus equipped therewith
TWI844567B (zh) 2018-10-01 2024-06-11 荷蘭商Asm Ip私人控股有限公司 基材保持裝置、含有此裝置之系統及其使用之方法
US11232963B2 (en) 2018-10-03 2022-01-25 Asm Ip Holding B.V. Substrate processing apparatus and method
KR102592699B1 (ko) 2018-10-08 2023-10-23 에이에스엠 아이피 홀딩 비.브이. 기판 지지 유닛 및 이를 포함하는 박막 증착 장치와 기판 처리 장치
KR102546322B1 (ko) 2018-10-19 2023-06-21 에이에스엠 아이피 홀딩 비.브이. 기판 처리 장치 및 기판 처리 방법
KR102605121B1 (ko) 2018-10-19 2023-11-23 에이에스엠 아이피 홀딩 비.브이. 기판 처리 장치 및 기판 처리 방법
USD948463S1 (en) 2018-10-24 2022-04-12 Asm Ip Holding B.V. Susceptor for semiconductor substrate supporting apparatus
US11087997B2 (en) 2018-10-31 2021-08-10 Asm Ip Holding B.V. Substrate processing apparatus for processing substrates
KR20200051105A (ko) 2018-11-02 2020-05-13 에이에스엠 아이피 홀딩 비.브이. 기판 지지 유닛 및 이를 포함하는 기판 처리 장치
US11572620B2 (en) 2018-11-06 2023-02-07 Asm Ip Holding B.V. Methods for selectively depositing an amorphous silicon film on a substrate
US11031242B2 (en) 2018-11-07 2021-06-08 Asm Ip Holding B.V. Methods for depositing a boron doped silicon germanium film
US10818758B2 (en) 2018-11-16 2020-10-27 Asm Ip Holding B.V. Methods for forming a metal silicate film on a substrate in a reaction chamber and related semiconductor device structures
US10847366B2 (en) 2018-11-16 2020-11-24 Asm Ip Holding B.V. Methods for depositing a transition metal chalcogenide film on a substrate by a cyclical deposition process
US12040199B2 (en) 2018-11-28 2024-07-16 Asm Ip Holding B.V. Substrate processing apparatus for processing substrates
US11217444B2 (en) 2018-11-30 2022-01-04 Asm Ip Holding B.V. Method for forming an ultraviolet radiation responsive metal oxide-containing film
KR102636428B1 (ko) 2018-12-04 2024-02-13 에이에스엠 아이피 홀딩 비.브이. 기판 처리 장치를 세정하는 방법
US11158513B2 (en) 2018-12-13 2021-10-26 Asm Ip Holding B.V. Methods for forming a rhenium-containing film on a substrate by a cyclical deposition process and related semiconductor device structures
JP7504584B2 (ja) 2018-12-14 2024-06-24 エーエスエム・アイピー・ホールディング・ベー・フェー 窒化ガリウムの選択的堆積を用いてデバイス構造体を形成する方法及びそのためのシステム
TWI819180B (zh) 2019-01-17 2023-10-21 荷蘭商Asm 智慧財產控股公司 藉由循環沈積製程於基板上形成含過渡金屬膜之方法
KR20200091543A (ko) 2019-01-22 2020-07-31 에이에스엠 아이피 홀딩 비.브이. 기판 처리 장치
CN111524788B (zh) 2019-02-01 2023-11-24 Asm Ip私人控股有限公司 氧化硅的拓扑选择性膜形成的方法
JP2020136678A (ja) 2019-02-20 2020-08-31 エーエスエム・アイピー・ホールディング・ベー・フェー 基材表面内に形成された凹部を充填するための方法および装置
TWI845607B (zh) 2019-02-20 2024-06-21 荷蘭商Asm Ip私人控股有限公司 用來填充形成於基材表面內之凹部的循環沉積方法及設備
KR102626263B1 (ko) 2019-02-20 2024-01-16 에이에스엠 아이피 홀딩 비.브이. 처리 단계를 포함하는 주기적 증착 방법 및 이를 위한 장치
KR20200102357A (ko) 2019-02-20 2020-08-31 에이에스엠 아이피 홀딩 비.브이. 3-d nand 응용의 플러그 충진체 증착용 장치 및 방법
TWI842826B (zh) 2019-02-22 2024-05-21 荷蘭商Asm Ip私人控股有限公司 基材處理設備及處理基材之方法
KR20200108242A (ko) 2019-03-08 2020-09-17 에이에스엠 아이피 홀딩 비.브이. 실리콘 질화물 층을 선택적으로 증착하는 방법, 및 선택적으로 증착된 실리콘 질화물 층을 포함하는 구조체
KR20200108243A (ko) 2019-03-08 2020-09-17 에이에스엠 아이피 홀딩 비.브이. SiOC 층을 포함한 구조체 및 이의 형성 방법
US11742198B2 (en) 2019-03-08 2023-08-29 Asm Ip Holding B.V. Structure including SiOCN layer and method of forming same
KR20200116033A (ko) 2019-03-28 2020-10-08 에이에스엠 아이피 홀딩 비.브이. 도어 개방기 및 이를 구비한 기판 처리 장치
KR20200116855A (ko) 2019-04-01 2020-10-13 에이에스엠 아이피 홀딩 비.브이. 반도체 소자를 제조하는 방법
KR20200123380A (ko) 2019-04-19 2020-10-29 에이에스엠 아이피 홀딩 비.브이. 층 형성 방법 및 장치
KR20200125453A (ko) 2019-04-24 2020-11-04 에이에스엠 아이피 홀딩 비.브이. 기상 반응기 시스템 및 이를 사용하는 방법
KR20200130121A (ko) 2019-05-07 2020-11-18 에이에스엠 아이피 홀딩 비.브이. 딥 튜브가 있는 화학물질 공급원 용기
KR20200130118A (ko) 2019-05-07 2020-11-18 에이에스엠 아이피 홀딩 비.브이. 비정질 탄소 중합체 막을 개질하는 방법
KR20200130652A (ko) 2019-05-10 2020-11-19 에이에스엠 아이피 홀딩 비.브이. 표면 상에 재료를 증착하는 방법 및 본 방법에 따라 형성된 구조
JP2020188255A (ja) 2019-05-16 2020-11-19 エーエスエム アイピー ホールディング ビー.ブイ. ウェハボートハンドリング装置、縦型バッチ炉および方法
JP2020188254A (ja) 2019-05-16 2020-11-19 エーエスエム アイピー ホールディング ビー.ブイ. ウェハボートハンドリング装置、縦型バッチ炉および方法
USD975665S1 (en) 2019-05-17 2023-01-17 Asm Ip Holding B.V. Susceptor shaft
USD947913S1 (en) 2019-05-17 2022-04-05 Asm Ip Holding B.V. Susceptor shaft
USD935572S1 (en) 2019-05-24 2021-11-09 Asm Ip Holding B.V. Gas channel plate
USD922229S1 (en) 2019-06-05 2021-06-15 Asm Ip Holding B.V. Device for controlling a temperature of a gas supply unit
KR20200141003A (ko) 2019-06-06 2020-12-17 에이에스엠 아이피 홀딩 비.브이. 가스 감지기를 포함하는 기상 반응기 시스템
KR20200143254A (ko) 2019-06-11 2020-12-23 에이에스엠 아이피 홀딩 비.브이. 개질 가스를 사용하여 전자 구조를 형성하는 방법, 상기 방법을 수행하기 위한 시스템, 및 상기 방법을 사용하여 형성되는 구조
USD944946S1 (en) 2019-06-14 2022-03-01 Asm Ip Holding B.V. Shower plate
USD931978S1 (en) 2019-06-27 2021-09-28 Asm Ip Holding B.V. Showerhead vacuum transport
KR20210005515A (ko) 2019-07-03 2021-01-14 에이에스엠 아이피 홀딩 비.브이. 기판 처리 장치용 온도 제어 조립체 및 이를 사용하는 방법
JP7499079B2 (ja) 2019-07-09 2024-06-13 エーエスエム・アイピー・ホールディング・ベー・フェー 同軸導波管を用いたプラズマ装置、基板処理方法
CN112216646A (zh) 2019-07-10 2021-01-12 Asm Ip私人控股有限公司 基板支撑组件及包括其的基板处理装置
KR20210010307A (ko) 2019-07-16 2021-01-27 에이에스엠 아이피 홀딩 비.브이. 기판 처리 장치
KR20210010816A (ko) 2019-07-17 2021-01-28 에이에스엠 아이피 홀딩 비.브이. 라디칼 보조 점화 플라즈마 시스템 및 방법
KR20210010820A (ko) 2019-07-17 2021-01-28 에이에스엠 아이피 홀딩 비.브이. 실리콘 게르마늄 구조를 형성하는 방법
US11643724B2 (en) 2019-07-18 2023-05-09 Asm Ip Holding B.V. Method of forming structures using a neutral beam
KR20210010817A (ko) 2019-07-19 2021-01-28 에이에스엠 아이피 홀딩 비.브이. 토폴로지-제어된 비정질 탄소 중합체 막을 형성하는 방법
TWI839544B (zh) 2019-07-19 2024-04-21 荷蘭商Asm Ip私人控股有限公司 形成形貌受控的非晶碳聚合物膜之方法
CN112309843A (zh) 2019-07-29 2021-02-02 Asm Ip私人控股有限公司 实现高掺杂剂掺入的选择性沉积方法
CN112309899A (zh) 2019-07-30 2021-02-02 Asm Ip私人控股有限公司 基板处理设备
CN112309900A (zh) 2019-07-30 2021-02-02 Asm Ip私人控股有限公司 基板处理设备
US11587814B2 (en) 2019-07-31 2023-02-21 Asm Ip Holding B.V. Vertical batch furnace assembly
US11587815B2 (en) 2019-07-31 2023-02-21 Asm Ip Holding B.V. Vertical batch furnace assembly
US11227782B2 (en) 2019-07-31 2022-01-18 Asm Ip Holding B.V. Vertical batch furnace assembly
CN118422165A (zh) 2019-08-05 2024-08-02 Asm Ip私人控股有限公司 用于化学源容器的液位传感器
USD965524S1 (en) 2019-08-19 2022-10-04 Asm Ip Holding B.V. Susceptor support
USD965044S1 (en) 2019-08-19 2022-09-27 Asm Ip Holding B.V. Susceptor shaft
JP2021031769A (ja) 2019-08-21 2021-03-01 エーエスエム アイピー ホールディング ビー.ブイ. 成膜原料混合ガス生成装置及び成膜装置
USD979506S1 (en) 2019-08-22 2023-02-28 Asm Ip Holding B.V. Insulator
USD949319S1 (en) 2019-08-22 2022-04-19 Asm Ip Holding B.V. Exhaust duct
KR20210024423A (ko) 2019-08-22 2021-03-05 에이에스엠 아이피 홀딩 비.브이. 홀을 구비한 구조체를 형성하기 위한 방법
USD940837S1 (en) 2019-08-22 2022-01-11 Asm Ip Holding B.V. Electrode
USD930782S1 (en) 2019-08-22 2021-09-14 Asm Ip Holding B.V. Gas distributor
US11286558B2 (en) 2019-08-23 2022-03-29 Asm Ip Holding B.V. Methods for depositing a molybdenum nitride film on a surface of a substrate by a cyclical deposition process and related semiconductor device structures including a molybdenum nitride film
KR20210024420A (ko) 2019-08-23 2021-03-05 에이에스엠 아이피 홀딩 비.브이. 비스(디에틸아미노)실란을 사용하여 peald에 의해 개선된 품질을 갖는 실리콘 산화물 막을 증착하기 위한 방법
KR20210029090A (ko) 2019-09-04 2021-03-15 에이에스엠 아이피 홀딩 비.브이. 희생 캡핑 층을 이용한 선택적 증착 방법
KR20210029663A (ko) 2019-09-05 2021-03-16 에이에스엠 아이피 홀딩 비.브이. 기판 처리 장치
US11562901B2 (en) 2019-09-25 2023-01-24 Asm Ip Holding B.V. Substrate processing method
CN112593212B (zh) 2019-10-02 2023-12-22 Asm Ip私人控股有限公司 通过循环等离子体增强沉积工艺形成拓扑选择性氧化硅膜的方法
TWI846953B (zh) 2019-10-08 2024-07-01 荷蘭商Asm Ip私人控股有限公司 基板處理裝置
KR20210042810A (ko) 2019-10-08 2021-04-20 에이에스엠 아이피 홀딩 비.브이. 활성 종을 이용하기 위한 가스 분배 어셈블리를 포함한 반응기 시스템 및 이를 사용하는 방법
KR20210043460A (ko) 2019-10-10 2021-04-21 에이에스엠 아이피 홀딩 비.브이. 포토레지스트 하부층을 형성하기 위한 방법 및 이를 포함한 구조체
US12009241B2 (en) 2019-10-14 2024-06-11 Asm Ip Holding B.V. Vertical batch furnace assembly with detector to detect cassette
TWI834919B (zh) 2019-10-16 2024-03-11 荷蘭商Asm Ip私人控股有限公司 氧化矽之拓撲選擇性膜形成之方法
US11637014B2 (en) 2019-10-17 2023-04-25 Asm Ip Holding B.V. Methods for selective deposition of doped semiconductor material
KR20210047808A (ko) 2019-10-21 2021-04-30 에이에스엠 아이피 홀딩 비.브이. 막을 선택적으로 에칭하기 위한 장치 및 방법
KR20210050453A (ko) 2019-10-25 2021-05-07 에이에스엠 아이피 홀딩 비.브이. 기판 표면 상의 갭 피처를 충진하는 방법 및 이와 관련된 반도체 소자 구조
US11646205B2 (en) 2019-10-29 2023-05-09 Asm Ip Holding B.V. Methods of selectively forming n-type doped material on a surface, systems for selectively forming n-type doped material, and structures formed using same
KR20210054983A (ko) 2019-11-05 2021-05-14 에이에스엠 아이피 홀딩 비.브이. 도핑된 반도체 층을 갖는 구조체 및 이를 형성하기 위한 방법 및 시스템
US11501968B2 (en) 2019-11-15 2022-11-15 Asm Ip Holding B.V. Method for providing a semiconductor device with silicon filled gaps
KR20210062561A (ko) 2019-11-20 2021-05-31 에이에스엠 아이피 홀딩 비.브이. 기판의 표면 상에 탄소 함유 물질을 증착하는 방법, 상기 방법을 사용하여 형성된 구조물, 및 상기 구조물을 형성하기 위한 시스템
CN112951697A (zh) 2019-11-26 2021-06-11 Asm Ip私人控股有限公司 基板处理设备
KR20210065848A (ko) 2019-11-26 2021-06-04 에이에스엠 아이피 홀딩 비.브이. 제1 유전체 표면과 제2 금속성 표면을 포함한 기판 상에 타겟 막을 선택적으로 형성하기 위한 방법
CN112885693A (zh) 2019-11-29 2021-06-01 Asm Ip私人控股有限公司 基板处理设备
CN112885692A (zh) 2019-11-29 2021-06-01 Asm Ip私人控股有限公司 基板处理设备
JP7527928B2 (ja) 2019-12-02 2024-08-05 エーエスエム・アイピー・ホールディング・ベー・フェー 基板処理装置、基板処理方法
KR20210070898A (ko) 2019-12-04 2021-06-15 에이에스엠 아이피 홀딩 비.브이. 기판 처리 장치
TW202125596A (zh) 2019-12-17 2021-07-01 荷蘭商Asm Ip私人控股有限公司 形成氮化釩層之方法以及包括該氮化釩層之結構
US11527403B2 (en) 2019-12-19 2022-12-13 Asm Ip Holding B.V. Methods for filling a gap feature on a substrate surface and related semiconductor structures
KR20210089079A (ko) 2020-01-06 2021-07-15 에이에스엠 아이피 홀딩 비.브이. 채널형 리프트 핀
TW202140135A (zh) 2020-01-06 2021-11-01 荷蘭商Asm Ip私人控股有限公司 氣體供應總成以及閥板總成
US11993847B2 (en) 2020-01-08 2024-05-28 Asm Ip Holding B.V. Injector
KR102675856B1 (ko) 2020-01-20 2024-06-17 에이에스엠 아이피 홀딩 비.브이. 박막 형성 방법 및 박막 표면 개질 방법
TW202130846A (zh) 2020-02-03 2021-08-16 荷蘭商Asm Ip私人控股有限公司 形成包括釩或銦層的結構之方法
TW202146882A (zh) 2020-02-04 2021-12-16 荷蘭商Asm Ip私人控股有限公司 驗證一物品之方法、用於驗證一物品之設備、及用於驗證一反應室之系統
US11776846B2 (en) 2020-02-07 2023-10-03 Asm Ip Holding B.V. Methods for depositing gap filling fluids and related systems and devices
US11781243B2 (en) 2020-02-17 2023-10-10 Asm Ip Holding B.V. Method for depositing low temperature phosphorous-doped silicon
TW202203344A (zh) 2020-02-28 2022-01-16 荷蘭商Asm Ip控股公司 專用於零件清潔的系統
KR20210116240A (ko) 2020-03-11 2021-09-27 에이에스엠 아이피 홀딩 비.브이. 조절성 접합부를 갖는 기판 핸들링 장치
KR20210116249A (ko) 2020-03-11 2021-09-27 에이에스엠 아이피 홀딩 비.브이. 록아웃 태그아웃 어셈블리 및 시스템 그리고 이의 사용 방법
CN113394086A (zh) 2020-03-12 2021-09-14 Asm Ip私人控股有限公司 用于制造具有目标拓扑轮廓的层结构的方法
KR20210124042A (ko) 2020-04-02 2021-10-14 에이에스엠 아이피 홀딩 비.브이. 박막 형성 방법
TW202146689A (zh) 2020-04-03 2021-12-16 荷蘭商Asm Ip控股公司 阻障層形成方法及半導體裝置的製造方法
TW202145344A (zh) 2020-04-08 2021-12-01 荷蘭商Asm Ip私人控股有限公司 用於選擇性蝕刻氧化矽膜之設備及方法
US11821078B2 (en) 2020-04-15 2023-11-21 Asm Ip Holding B.V. Method for forming precoat film and method for forming silicon-containing film
KR20210128343A (ko) 2020-04-15 2021-10-26 에이에스엠 아이피 홀딩 비.브이. 크롬 나이트라이드 층을 형성하는 방법 및 크롬 나이트라이드 층을 포함하는 구조
US11996289B2 (en) 2020-04-16 2024-05-28 Asm Ip Holding B.V. Methods of forming structures including silicon germanium and silicon layers, devices formed using the methods, and systems for performing the methods
KR20210132600A (ko) 2020-04-24 2021-11-04 에이에스엠 아이피 홀딩 비.브이. 바나듐, 질소 및 추가 원소를 포함한 층을 증착하기 위한 방법 및 시스템
TW202146831A (zh) 2020-04-24 2021-12-16 荷蘭商Asm Ip私人控股有限公司 垂直批式熔爐總成、及用於冷卻垂直批式熔爐之方法
JP2021172884A (ja) 2020-04-24 2021-11-01 エーエスエム・アイピー・ホールディング・ベー・フェー 窒化バナジウム含有層を形成する方法および窒化バナジウム含有層を含む構造体
KR20210134226A (ko) 2020-04-29 2021-11-09 에이에스엠 아이피 홀딩 비.브이. 고체 소스 전구체 용기
KR20210134869A (ko) 2020-05-01 2021-11-11 에이에스엠 아이피 홀딩 비.브이. Foup 핸들러를 이용한 foup의 빠른 교환
TW202147543A (zh) 2020-05-04 2021-12-16 荷蘭商Asm Ip私人控股有限公司 半導體處理系統
KR20210141379A (ko) 2020-05-13 2021-11-23 에이에스엠 아이피 홀딩 비.브이. 반응기 시스템용 레이저 정렬 고정구
TW202146699A (zh) 2020-05-15 2021-12-16 荷蘭商Asm Ip私人控股有限公司 形成矽鍺層之方法、半導體結構、半導體裝置、形成沉積層之方法、及沉積系統
KR20210143653A (ko) 2020-05-19 2021-11-29 에이에스엠 아이피 홀딩 비.브이. 기판 처리 장치
KR20210145078A (ko) 2020-05-21 2021-12-01 에이에스엠 아이피 홀딩 비.브이. 다수의 탄소 층을 포함한 구조체 및 이를 형성하고 사용하는 방법
KR102702526B1 (ko) 2020-05-22 2024-09-03 에이에스엠 아이피 홀딩 비.브이. 과산화수소를 사용하여 박막을 증착하기 위한 장치
TW202201602A (zh) 2020-05-29 2022-01-01 荷蘭商Asm Ip私人控股有限公司 基板處理方法
TW202212620A (zh) 2020-06-02 2022-04-01 荷蘭商Asm Ip私人控股有限公司 處理基板之設備、形成膜之方法、及控制用於處理基板之設備之方法
TW202218133A (zh) 2020-06-24 2022-05-01 荷蘭商Asm Ip私人控股有限公司 形成含矽層之方法
TW202217953A (zh) 2020-06-30 2022-05-01 荷蘭商Asm Ip私人控股有限公司 基板處理方法
KR102707957B1 (ko) 2020-07-08 2024-09-19 에이에스엠 아이피 홀딩 비.브이. 기판 처리 방법
TW202219628A (zh) 2020-07-17 2022-05-16 荷蘭商Asm Ip私人控股有限公司 用於光微影之結構與方法
TW202204662A (zh) 2020-07-20 2022-02-01 荷蘭商Asm Ip私人控股有限公司 用於沉積鉬層之方法及系統
US12040177B2 (en) 2020-08-18 2024-07-16 Asm Ip Holding B.V. Methods for forming a laminate film by cyclical plasma-enhanced deposition processes
KR20220027026A (ko) 2020-08-26 2022-03-07 에이에스엠 아이피 홀딩 비.브이. 금속 실리콘 산화물 및 금속 실리콘 산질화물 층을 형성하기 위한 방법 및 시스템
TW202229601A (zh) 2020-08-27 2022-08-01 荷蘭商Asm Ip私人控股有限公司 形成圖案化結構的方法、操控機械特性的方法、裝置結構、及基板處理系統
USD990534S1 (en) 2020-09-11 2023-06-27 Asm Ip Holding B.V. Weighted lift pin
USD1012873S1 (en) 2020-09-24 2024-01-30 Asm Ip Holding B.V. Electrode for semiconductor processing apparatus
US12009224B2 (en) 2020-09-29 2024-06-11 Asm Ip Holding B.V. Apparatus and method for etching metal nitrides
KR20220045900A (ko) 2020-10-06 2022-04-13 에이에스엠 아이피 홀딩 비.브이. 실리콘 함유 재료를 증착하기 위한 증착 방법 및 장치
CN114293174A (zh) 2020-10-07 2022-04-08 Asm Ip私人控股有限公司 气体供应单元和包括气体供应单元的衬底处理设备
TW202229613A (zh) 2020-10-14 2022-08-01 荷蘭商Asm Ip私人控股有限公司 於階梯式結構上沉積材料的方法
KR20220053482A (ko) 2020-10-22 2022-04-29 에이에스엠 아이피 홀딩 비.브이. 바나듐 금속을 증착하는 방법, 구조체, 소자 및 증착 어셈블리
TW202223136A (zh) 2020-10-28 2022-06-16 荷蘭商Asm Ip私人控股有限公司 用於在基板上形成層之方法、及半導體處理系統
TW202235649A (zh) 2020-11-24 2022-09-16 荷蘭商Asm Ip私人控股有限公司 填充間隙之方法與相關之系統及裝置
TW202235675A (zh) 2020-11-30 2022-09-16 荷蘭商Asm Ip私人控股有限公司 注入器、及基板處理設備
US11946137B2 (en) 2020-12-16 2024-04-02 Asm Ip Holding B.V. Runout and wobble measurement fixtures
TW202231903A (zh) 2020-12-22 2022-08-16 荷蘭商Asm Ip私人控股有限公司 過渡金屬沉積方法、過渡金屬層、用於沉積過渡金屬於基板上的沉積總成
USD1023959S1 (en) 2021-05-11 2024-04-23 Asm Ip Holding B.V. Electrode for substrate processing apparatus
USD981973S1 (en) 2021-05-11 2023-03-28 Asm Ip Holding B.V. Reactor wall for substrate processing apparatus
USD980814S1 (en) 2021-05-11 2023-03-14 Asm Ip Holding B.V. Gas distributor for substrate processing apparatus
USD980813S1 (en) 2021-05-11 2023-03-14 Asm Ip Holding B.V. Gas flow control plate for substrate processing apparatus
USD990441S1 (en) 2021-09-07 2023-06-27 Asm Ip Holding B.V. Gas flow control plate

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6657223B1 (en) * 2002-10-29 2003-12-02 Advanced Micro Devices, Inc. Strained silicon MOSFET having silicon source/drain regions and method for its fabrication
US6881635B1 (en) * 2004-03-23 2005-04-19 International Business Machines Corporation Strained silicon NMOS devices with embedded source/drain
US7112848B2 (en) * 2004-09-13 2006-09-26 Taiwan Semiconductor Manufacturing Company, Ltd. Thin channel MOSFET with source/drain stressors
US20060065937A1 (en) * 2004-09-30 2006-03-30 Thomas Hoffmann Short channel effect of MOS devices by retrograde well engineering using tilted dopant implantation into recessed source/drain regions
US20060091490A1 (en) * 2004-11-03 2006-05-04 Hung-Wei Chen Self-aligned gated p-i-n diode for ultra-fast switching
US20060118878A1 (en) * 2004-12-02 2006-06-08 Taiwan Semiconductor Manufacturing Co., Ltd. CMOS device with selectively formed and backfilled semiconductor substrate areas to improve device performance

Cited By (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8822293B2 (en) 2008-03-13 2014-09-02 Taiwan Semiconductor Manufacturing Company, Ltd. Self-aligned halo/pocket implantation for reducing leakage and source/drain resistance in MOS devices
CN105870003A (zh) * 2008-03-13 2016-08-17 台湾积体电路制造股份有限公司 形成半导体结构的方法
CN105870003B (zh) * 2008-03-13 2019-08-13 台湾积体电路制造股份有限公司 形成半导体结构的方法
CN103155123A (zh) * 2010-10-15 2013-06-12 国际商业机器公司 具有SiGe沟道的pFET结分布的结构和方法
CN103155123B (zh) * 2010-10-15 2016-02-10 国际商业机器公司 具有SiGe沟道的pFET结分布的结构和方法
CN102479711A (zh) * 2010-11-25 2012-05-30 中芯国际集成电路制造(北京)有限公司 Pmos晶体管的形成方法
CN102479711B (zh) * 2010-11-25 2014-09-03 中芯国际集成电路制造(北京)有限公司 Pmos晶体管的形成方法
CN103187276A (zh) * 2011-12-27 2013-07-03 中芯国际集成电路制造(上海)有限公司 n型MOS场效应管及形成方法,半导体器件及形成方法
CN104051506B (zh) * 2013-03-15 2017-08-08 新加坡商格罗方德半导体私人有限公司 氟掺杂信道硅锗层
WO2015196993A1 (zh) * 2014-06-26 2015-12-30 无锡华润上华半导体有限公司 金属氧化物半导体场器件制造方法
CN109285765A (zh) * 2017-07-19 2019-01-29 Asm Ip控股有限公司 沉积iv族半导体的方法及相关的半导体器件结构

Also Published As

Publication number Publication date
CN101093804B (zh) 2012-02-01
US20070298565A1 (en) 2007-12-27
TW200802625A (en) 2008-01-01
US7482211B2 (en) 2009-01-27
TWI335626B (en) 2011-01-01

Similar Documents

Publication Publication Date Title
CN101093804B (zh) 半导体元件的形成方法
CN102931222B (zh) 半导体器件及其制造方法
US7538387B2 (en) Stack SiGe for short channel improvement
CN100530598C (zh) 半导体结构的形成方法
CN100539043C (zh) 半导体装置及其形成方法
TWI230460B (en) Gate-induced strain for MOS performance improvement
US7118952B2 (en) Method of making transistor with strained source/drain
CN101136435B (zh) 半导体的结构
US10103245B2 (en) Embedded shape sige for strained channel transistors
US8889501B2 (en) Methods for forming MOS devices with raised source/drain regions
CN101378022B (zh) 形成一半导体元件的方法
CN103035526B (zh) 半导体器件及其制造方法
US7943471B1 (en) Diode with asymmetric silicon germanium anode
US7550336B2 (en) Method for fabricating an NMOS transistor
US20070298557A1 (en) Junction leakage reduction in SiGe process by tilt implantation
US6638802B1 (en) Forming strained source drain junction field effect transistors
JP5195747B2 (ja) 半導体装置の製造方法
CN102388447A (zh) 使用l形间隔部之非对称场效晶体管的制造和结构
US9343375B2 (en) Method for manufacturing a transistor in which the strain applied to the channel is increased
JP2006332337A (ja) 半導体装置及びその製造方法
US8754447B2 (en) Strained channel transistor structure and method
DE102008063399B4 (de) Asymmetrischer Transistor mit einer eingebetteten Halbleiterlegierung mit einer asymmetrischen Anordnung und Verfahren zur Herstellung des Transistors
CN102386234A (zh) 半导体元件与其形成方法
CN101517741A (zh) 具有包含性能增进材料成分的受应变沟道区的晶体管
JP2006060208A (ja) 高性能なサブ0.1マイクロメートルトランジスタ用のソース/ドレイン構造

Legal Events

Date Code Title Description
C06 Publication
PB01 Publication
C10 Entry into substantive examination
SE01 Entry into force of request for substantive examination
C12 Rejection of a patent application after its publication
RJ01 Rejection of invention patent application after publication

Open date: 20071226

CI01 Publication of corrected invention patent application

Correction item: Rejection of patent application

Correct: Dismiss

False: Reject

Number: 32

Volume: 26

ERR Gazette correction

Free format text: CORRECT: PATENT APPLICATION REJECTION AFTER THE ANNOUNCEMENT; FROM: REJECTION TO: CANCEL REJECTION

C14 Grant of patent or utility model
GR01 Patent grant
CF01 Termination of patent right due to non-payment of annual fee
CF01 Termination of patent right due to non-payment of annual fee

Granted publication date: 20120201