JP2013106048A - 発光装置及びこれを備えた発光装置 - Google Patents
発光装置及びこれを備えた発光装置 Download PDFInfo
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- JP2013106048A JP2013106048A JP2012249944A JP2012249944A JP2013106048A JP 2013106048 A JP2013106048 A JP 2013106048A JP 2012249944 A JP2012249944 A JP 2012249944A JP 2012249944 A JP2012249944 A JP 2012249944A JP 2013106048 A JP2013106048 A JP 2013106048A
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- light emitting
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- emitting device
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- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/20—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular shape, e.g. curved or truncated substrate
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- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/20—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular shape, e.g. curved or truncated substrate
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- H01L33/36—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
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- H01L33/36—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
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Abstract
【解決手段】本発明に従う発光素子は、透光性の基板、前記基板の上面に複数の突起を有する第1パターン部、前記基板の上面に前記複数の突起の各々の幅より小さな幅を有する複数の凹部を含む第2パターン部、前記基板の下に配置され、第1導電型半導体層、第2導電型半導体層、前記第1導電型半導体層と前記第2導電型半導体層との間に配置された活性層を含む発光構造物、前記第1導電型半導体層の下に配置された第1電極、前記第2導電型半導体層の下に配置された反射電極層、前記反射電極層の下に配置された第2電極、前記第1電極の下に配置された第1連結電極、前記第2電極の下に配置された第2連結電極、及び前記第1電極及び第1連結電極と前記第2電極及び前記第2連結電極の周りに配置され、セラミック材質の熱拡散剤が添加された絶縁性の支持部材を含む。
【選択図】図1
Description
以下、添付した図面を参照して説明すれば、次の通りである。
前記支持部材151の下面は実質的に平坦な面で形成されるか、不規則な面で形成され、これに対して限定するものではない。
実施形態による発光素子又は発光素子は、照明システムに適用される。前記照明システムは、複数の発光素子がアレイされた構造を含み、図42及び図43に示されている表示装置、図44に示されている照明装置とを含み、照明灯、信号灯、車両前照灯、電光板などが含まれる。
11A、12、14 凹部
100、101 発光素子
111 基板
113 第1半導体層
115 第1導電型半導体層
117 活性層
119 第2導電型半導体層
120 発光構造物
130、131 反射電極層
133 絶縁層
135、136 第1電極
137、138 第2電極
141 第1連結電極
143 第2連結電極
151 支持部材
170 モジュール基板
200、201 発光素子パッケージ
Claims (20)
- 透光性の基板と、
前記基板の上面に複数の突起を有する第1パターン部と、
前記基板の上面に前記複数の突起の各々の幅より小さな幅を有する複数の凹部を含む第2パターン部と、
前記基板の下に配置され、第1導電型半導体層、第2導電型半導体層、及び前記第1導電型半導体層と前記第2導電型半導体層との間に配置された活性層を含む発光構造物と、
前記第1導電型半導体層の下に配置された第1電極と、
前記第2導電型半導体層の下に配置された反射電極層と、
前記反射電極層の下に配置された第2電極と、
前記第1電極の下に配置された第1連結電極と、
前記第2電極の下に配置された第2連結電極と、
前記第1電極及び第1連結電極と前記第2電極及び前記第2連結電極の周りに配置され、セラミック材質の熱拡散剤が添加された絶縁性の支持部材と、
を含むことを特徴とする、発光素子。 - 前記複数の凹部は前記複数の突起の各々にさらに配置されることを特徴とする、請求項1に記載の発光素子。
- 前記複数の突起は半球型形状を含むことを特徴とする、請求項1または2に記載の発光素子。
- 前記複数の突起は一定の間隔で配列され、前記複数の凹部は不規則な間隔で配列されることを特徴とする、請求項1乃至3のうち、いずれか1項に記載の発光素子。
- 前記複数の凹部の各々は前記突起の幅の50%以下の小さな幅を有することを特徴とする、請求項1乃至4のうち、いずれか1項に記載の発光素子。
- 前記突起は0.1μm−10μm範囲の幅を有することを特徴とする、請求項1乃至5のうち、いずれか1項に記載の発光素子。
- 前記基板の上に蛍光体層を含み、前記蛍光体層の一部は前記凹部の内に配置されることを特徴とする、請求項1乃至6のうち、いずれか1項に記載の発光素子。
- 前記基板と前記蛍光体層との間に透光性樹脂層を含むことを特徴とする、請求項7に記載の発光素子。
- 前記基板の下面に複数の突起を含むことを特徴とする、請求項1乃至8のうち、いずれか1項に記載の発光素子。
- 前記セラミック材質の熱拡散剤は、Al、Cr、Si、Ti、Zn、Zrのうちの少なくとも1つを有する酸化物、窒化物、フッ化物、及び硫化物のうち、少なくとも1つを含むことを特徴とする、請求項1乃至9のうち、いずれか1項に記載の発光素子。
- 前記支持部材の下面は前記第1連結電極及び前記第2連結電極の下面と同一な水平面に配置されることを特徴とする、請求項1乃至10のうち、いずれか1項に記載の発光素子。
- 前記反射電極層は前記発光構造物に接触されたオーミック接触層、前記オーミック接触層の下に配置された反射層、及び前記反射層の下に配置された第1拡散防止層を含み、
前記第1電極及び第2電極のうちの少なくとも1つは、前記第1拡散防止層の下に接着された第1接着層、前記第1接着層の下に第2拡散防止層、及び前記第2拡散防止層の下に第1ボンディング層を含むことを特徴とする、請求項1乃至11のうち、いずれか1項に記載の発光素子。 - 前記第1電極と前記第1連結電極との間に接合された第1電極ボンディング層、及び前記第2電極と前記第2連結電極との間に接合された第2電極ボンディング層を含むことを特徴とする、請求項1乃至12のうち、いずれか1項に記載の発光素子。
- 前記第1電極ボンディング層は前記第1電極に接合された第1接合電極、及び前記第1連結電極と前記第1接合電極との間に接合された第2接合電極を含み、
前記第2ボンディング電極層は、前記第2電極に接合された第3接合電極、及び前記第2連結電極と前記第3接合電極との間に接合された第4接合電極を含むことを特徴とする、請求項13に記載の発光素子。 - 第1導電型半導体層と、
前記第1導電型半導体層の下に活性層と、
前記活性層の下に第2導電型半導体層と、
前記第1導電型半導体層の上面に複数の突起を有する第1パターン部と、
前記第1導電型半導体層の上面に前記複数の突起の各々の幅より小さな幅を有する複数の凹部を含む第2パターン部と、
前記第1導電型半導体層の下に配置された第1電極と、
前記第2導電型半導体層の下に配置された反射電極層と、
前記反射電極層の下に配置された第2電極と、
前記第1電極の下に配置された第1連結電極と、
前記第2電極の下に配置された第2連結電極と、
前記第1電極及び第1連結電極と前記第2電極及び前記第2連結電極の周りに配置され、セラミック材質の熱拡散剤を有する絶縁性の支持部材を含むことを特徴とする、 発光素子。 - 前記パターン部は前記複数の突起が配列され、前記凹部は前記第1突起の幅の50%以下の小さな幅を有することを特徴とする、請求項15に記載の発光素子。
- 前記突起の幅は0.1μm−3μm範囲を含むことを特徴とする、請求項15または16に記載の発光素子。
- 前記熱拡散剤は、Al、Cr、Si、Ti、Zn、Zrのうちの少なくとも1つを有する酸化物、窒化物、フッ化物、及び硫化物のうち、少なくとも1つを含むことを特徴とする、請求項15乃至17のうち、いずれか1項に記載の発光素子。
- 前記支持部材の下面は前記第1連結電極及び前記第2連結電極の下面と同一な水平面に配置され、
前記第1電極と前記第1連結電極との間に接合され、複数の接合電極を有する第1電極ボンディング層、及び前記第2電極と前記第2連結電極との間に接合され、複数の接合電極を有する第2電極ボンディング層を含むことを特徴とする、請求項15乃至18のうち、いずれか1項に記載の発光素子。 - 下部に支持部材、前記支持部材の下面に露出された第1連結電極、及び第2連結電極を有する発光素子と、
前記発光素子の第1連結電極及び第2連結電極が搭載された複数のリードフレームと、
前記複数のリードフレームが配置された胴体と、を含み、
前記発光素子は、
透光性の基板と、
前記基板の上面に複数の突起を有する第1パターン部と、
前記基板の上面に前記複数の突起の各々の幅より小さな幅を有する複数の凹部を含む第2パターン部と、
前記基板の下に配置され、第1導電型半導体層、前記第2導電型半導体層、前記第1半導体層と前記第2導電型半導体層との間に配置された活性層を含む発光構造物と、
前記第1導電型半導体層と第1連結電極との間に配置された第1電極と、
前記第2導電型半導体層の下に配置された反射電極層と、
前記反射電極層と前記第2連結電極との間に配置された第2電極と、を含み、
前記支持部材は第1電極及び第1連結電極と前記第2電極及び前記第2連結電極の周りに配置され、セラミック材質の熱拡散剤を含み、
前記発光素子の第1連結電極と第2連結電極、及び支持部材の下面は前記複数のリードフレームの上面と同一な間隔を有することを特徴とする、発光装置。
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Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
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US9269878B2 (en) | 2011-05-27 | 2016-02-23 | Lg Innotek Co., Ltd. | Light emitting device and light emitting apparatus |
TWI606618B (zh) * | 2012-01-03 | 2017-11-21 | Lg伊諾特股份有限公司 | 發光裝置 |
JP5881560B2 (ja) * | 2012-08-30 | 2016-03-09 | 株式会社東芝 | 半導体発光装置及びその製造方法 |
CN103066178B (zh) * | 2012-12-29 | 2015-07-29 | 映瑞光电科技(上海)有限公司 | 一种倒装光子晶体led芯片及其制造方法 |
KR101504331B1 (ko) * | 2013-03-04 | 2015-03-19 | 삼성전자주식회사 | 발광소자 패키지 |
TWI661578B (zh) * | 2013-06-20 | 2019-06-01 | 晶元光電股份有限公司 | 發光裝置及發光陣列 |
KR102075655B1 (ko) * | 2013-06-24 | 2020-02-10 | 엘지이노텍 주식회사 | 발광 소자 및 발광 소자 패키지 |
TWI540766B (zh) * | 2013-07-10 | 2016-07-01 | 隆達電子股份有限公司 | 發光二極體封裝結構 |
US9548247B2 (en) * | 2013-07-22 | 2017-01-17 | Infineon Technologies Austria Ag | Methods for producing semiconductor devices |
CN103474559A (zh) * | 2013-09-02 | 2013-12-25 | 四川柏狮光电技术有限公司 | 荧光板材及其制备方法 |
KR102165264B1 (ko) * | 2013-10-10 | 2020-10-13 | 삼성전자 주식회사 | 아연 입자를 함유하는 비전도성 폴리머 막, 비전도성 폴리머 페이스트, 이들을 포함하는 반도체 패키지, 및 반도체 패키지의 제조 방법 |
TWI533478B (zh) * | 2013-10-14 | 2016-05-11 | 新世紀光電股份有限公司 | 覆晶式發光二極體封裝結構 |
JP6387780B2 (ja) | 2013-10-28 | 2018-09-12 | 日亜化学工業株式会社 | 発光装置及びその製造方法 |
KR102125450B1 (ko) | 2013-12-05 | 2020-06-22 | 엘지이노텍 주식회사 | 광변환부재 및 이를 포함하는 조명장치 |
KR102099441B1 (ko) * | 2013-12-19 | 2020-04-09 | 엘지이노텍 주식회사 | 발광소자 |
TWI552386B (zh) * | 2013-12-20 | 2016-10-01 | 新世紀光電股份有限公司 | 半導體發光結構及半導體封裝結構 |
US20150200336A1 (en) * | 2014-01-10 | 2015-07-16 | Cree, Inc. | Wafer level contact pad standoffs with integrated reflector |
CN105023983A (zh) * | 2014-04-24 | 2015-11-04 | 展晶科技(深圳)有限公司 | 覆晶式半导体发光元件及其制造方法 |
US20150325748A1 (en) | 2014-05-07 | 2015-11-12 | Genesis Photonics Inc. | Light emitting device |
US10147854B2 (en) * | 2014-05-10 | 2018-12-04 | Sensor Electronic Technology, Inc. | Packaging for ultraviolet optoelectronic device |
WO2015175369A1 (en) | 2014-05-10 | 2015-11-19 | Sensor Electronic Technology, Inc. | Packaging for ultraviolet optoelectronic device |
US20160064631A1 (en) * | 2014-05-10 | 2016-03-03 | Sensor Electronic Technology, Inc. | Packaging for Ultraviolet Optoelectronic Device |
CN105098020B (zh) * | 2014-05-14 | 2018-11-09 | 中国科学院苏州纳米技术与纳米仿生研究所 | Led发光器件 |
KR102019914B1 (ko) * | 2014-06-11 | 2019-11-04 | 엘지이노텍 주식회사 | 발광 소자 |
KR102407827B1 (ko) * | 2015-01-27 | 2022-06-13 | 서울바이오시스 주식회사 | 발광 소자 |
TWI641285B (zh) | 2014-07-14 | 2018-11-11 | 新世紀光電股份有限公司 | 發光模組與發光單元的製作方法 |
US9373761B2 (en) * | 2014-09-23 | 2016-06-21 | Osram Sylvania Inc. | Patterned thin-film wavelength converter and method of making same |
TWI556469B (zh) * | 2014-12-19 | 2016-11-01 | 固美實國際股份有限公司 | 圖案化發光二極體基板 |
KR102309670B1 (ko) * | 2014-12-24 | 2021-10-07 | 쑤저우 레킨 세미컨덕터 컴퍼니 리미티드 | 발광소자, 발광소자 패키지 및 조명시스템 |
JP2016149462A (ja) * | 2015-02-12 | 2016-08-18 | 豊田合成株式会社 | 発光素子およびその製造方法 |
CN104638085A (zh) * | 2015-02-13 | 2015-05-20 | 常州乐迪电子科技有限公司 | 一种新型倒装芯片及其制作与封装方法 |
DE102015102365A1 (de) * | 2015-02-19 | 2016-08-25 | Osram Opto Semiconductors Gmbh | Strahlungskörper und Verfahren zur Herstellung eines Strahlungskörpers |
JP6555907B2 (ja) | 2015-03-16 | 2019-08-07 | アルパッド株式会社 | 半導体発光装置 |
CN104993031B (zh) * | 2015-06-12 | 2018-03-06 | 映瑞光电科技(上海)有限公司 | 高压倒装led芯片及其制造方法 |
KR20170003102A (ko) * | 2015-06-30 | 2017-01-09 | 엘지이노텍 주식회사 | 발광소자 및 이를 포함하는 발광소자 패키지 |
KR20180018700A (ko) * | 2015-07-29 | 2018-02-21 | 니기소 가부시키가이샤 | 발광 소자의 제조 방법 |
KR102373677B1 (ko) * | 2015-08-24 | 2022-03-14 | 쑤저우 레킨 세미컨덕터 컴퍼니 리미티드 | 발광소자 |
CN106486576B (zh) * | 2015-08-31 | 2018-10-26 | 展晶科技(深圳)有限公司 | 发光二极管元件 |
KR102415075B1 (ko) | 2015-09-30 | 2022-06-30 | 쑤저우 레킨 세미컨덕터 컴퍼니 리미티드 | 발광소자 |
KR102481646B1 (ko) * | 2015-11-12 | 2022-12-29 | 삼성전자주식회사 | 반도체 발광소자 패키지 |
US10892390B2 (en) * | 2016-02-05 | 2021-01-12 | Lg Innotek Co., Ltd. | Light-emitting element and light-emitting element package including the same |
CN106025010A (zh) * | 2016-07-19 | 2016-10-12 | 厦门乾照光电股份有限公司 | 一种基于导电dbr结构的倒装led芯片及其制作方法 |
JP6871706B2 (ja) | 2016-09-30 | 2021-05-12 | 日機装株式会社 | 半導体発光素子の製造方法 |
CN110036493A (zh) * | 2016-11-22 | 2019-07-19 | 国立研究开发法人情报通信研究机构 | 具备放射深紫外光的半导体发光元件的发光组件 |
TWI778010B (zh) * | 2017-01-26 | 2022-09-21 | 晶元光電股份有限公司 | 發光元件 |
TWI759289B (zh) * | 2017-03-21 | 2022-04-01 | 晶元光電股份有限公司 | 發光元件 |
CN107706290A (zh) * | 2017-10-10 | 2018-02-16 | 青岛杰生电气有限公司 | 一种用于倒装芯片的紫外发光二极管及衬底刻蚀方法 |
DE102017125821A1 (de) * | 2017-11-06 | 2019-05-09 | Osram Opto Semiconductors Gmbh | Optoelektronischer Halbleiterchip und Verfahren zur Herstellung eines optoelektronischen Halbleiterchips |
US10910535B2 (en) * | 2017-11-08 | 2021-02-02 | SemiLEDs Optoelectronics Co., Ltd. | Method for making light emitting device LED arrays |
CN108461388B (zh) * | 2018-03-26 | 2020-11-06 | 云谷(固安)科技有限公司 | 一种衬底结构、加工方法和显示装置 |
CN111326609B (zh) * | 2018-12-14 | 2021-05-25 | 成都辰显光电有限公司 | 发光器件、发光器件的制作方法及显示装置 |
TWI687677B (zh) * | 2019-01-23 | 2020-03-11 | 國立清華大學 | 光學基板及其製備方法 |
US11610868B2 (en) * | 2019-01-29 | 2023-03-21 | Osram Opto Semiconductors Gmbh | μ-LED, μ-LED device, display and method for the same |
KR20200137540A (ko) * | 2019-05-30 | 2020-12-09 | 서울바이오시스 주식회사 | 수직형 발광 다이오드 |
US11152540B2 (en) * | 2019-07-29 | 2021-10-19 | Lextar Electronics Corporation | Light emitting diode structure and method of manufacturing thereof |
US20210091265A1 (en) * | 2019-08-21 | 2021-03-25 | Industrial Technology Research Institute | Light-emitting device and display apparatus |
CN110379899A (zh) * | 2019-08-26 | 2019-10-25 | 厦门乾照光电股份有限公司 | 一种led芯片及其制作方法 |
CN110752228B (zh) * | 2019-10-28 | 2022-05-24 | 錼创显示科技股份有限公司 | 微型发光二极管装置 |
TWI714319B (zh) | 2019-10-28 | 2020-12-21 | 錼創顯示科技股份有限公司 | 微型發光二極體裝置 |
CN111261766A (zh) * | 2020-01-21 | 2020-06-09 | 厦门乾照光电股份有限公司 | 一种倒装薄膜led芯片结构及其制备方法 |
CN112968092A (zh) * | 2020-11-19 | 2021-06-15 | 重庆康佳光电技术研究院有限公司 | 发光器件、其制作方法及具有其的显示面板 |
CN113299809B (zh) * | 2021-05-24 | 2023-04-18 | 錼创显示科技股份有限公司 | 微型发光元件及其显示装置 |
TWI760231B (zh) * | 2021-05-24 | 2022-04-01 | 錼創顯示科技股份有限公司 | 微型發光元件及其顯示裝置 |
CN113937197A (zh) * | 2021-10-13 | 2022-01-14 | 錼创显示科技股份有限公司 | 微型发光二极管显示面板 |
TWI811810B (zh) * | 2021-10-13 | 2023-08-11 | 錼創顯示科技股份有限公司 | 微型發光二極體顯示面板 |
US20230411562A1 (en) * | 2022-06-21 | 2023-12-21 | Creeled, Inc. | Light extraction structures for light-emitting diode chips and related methods |
CN116092382A (zh) * | 2022-12-30 | 2023-05-09 | 上海天马微电子有限公司 | 一种可折叠膜材结构及其制备方法、显示面板和显示装置 |
CN116544321B (zh) * | 2023-07-06 | 2024-04-02 | 季华实验室 | 发光芯片的制备方法、发光芯片以及显示面板 |
Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2001217467A (ja) * | 2000-02-02 | 2001-08-10 | Ind Technol Res Inst | 高効率白色発光ダイオード |
JP2008047861A (ja) * | 2006-08-14 | 2008-02-28 | Samsung Electro Mech Co Ltd | 垂直構造窒化ガリウム系発光ダイオード素子及びその製造方法 |
WO2010082286A1 (ja) * | 2009-01-13 | 2010-07-22 | 株式会社小糸製作所 | 発光モジュールおよび灯具ユニット |
JP2011009572A (ja) * | 2009-06-26 | 2011-01-13 | Citizen Electronics Co Ltd | フリップチップ実装型led及びフリップチップ実装型ledの製造方法。 |
JP2011061192A (ja) * | 2009-08-13 | 2011-03-24 | Showa Denko Kk | 半導体発光素子、半導体発光装置、半導体発光素子の製造方法、半導体発光装置の製造方法、半導体発光装置を用いた照明装置および電子機器 |
JP2011187679A (ja) * | 2010-03-09 | 2011-09-22 | Toshiba Corp | 半導体発光装置及びその製造方法 |
Family Cites Families (29)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH01160028A (ja) * | 1987-12-17 | 1989-06-22 | Matsushita Electric Ind Co Ltd | 電極の接続方法 |
US6486499B1 (en) * | 1999-12-22 | 2002-11-26 | Lumileds Lighting U.S., Llc | III-nitride light-emitting device with increased light generating capability |
US6642652B2 (en) * | 2001-06-11 | 2003-11-04 | Lumileds Lighting U.S., Llc | Phosphor-converted light emitting device |
JP4529319B2 (ja) * | 2001-06-27 | 2010-08-25 | 日亜化学工業株式会社 | 半導体チップとその製造方法 |
JP4214704B2 (ja) | 2002-03-20 | 2009-01-28 | 日亜化学工業株式会社 | 半導体素子 |
KR100499129B1 (ko) * | 2002-09-02 | 2005-07-04 | 삼성전기주식회사 | 발광 다이오드 및 그 제조방법 |
US7179670B2 (en) | 2004-03-05 | 2007-02-20 | Gelcore, Llc | Flip-chip light emitting diode device without sub-mount |
TW200614548A (en) | 2004-07-09 | 2006-05-01 | Matsushita Electric Ind Co Ltd | Light-emitting device |
US20060204865A1 (en) * | 2005-03-08 | 2006-09-14 | Luminus Devices, Inc. | Patterned light-emitting devices |
KR100638813B1 (ko) * | 2005-04-15 | 2006-10-27 | 삼성전기주식회사 | 플립칩형 질화물 반도체 발광소자 |
KR100736623B1 (ko) | 2006-05-08 | 2007-07-09 | 엘지전자 주식회사 | 수직형 발광 소자 및 그 제조방법 |
EP2087563B1 (en) * | 2006-11-15 | 2014-09-24 | The Regents of The University of California | Textured phosphor conversion layer light emitting diode |
KR100941766B1 (ko) * | 2007-08-08 | 2010-02-11 | 한국광기술원 | 패드 재배열을 이용한 반도체 발광 다이오드 및 그의제조방법 |
US7977695B2 (en) * | 2007-09-21 | 2011-07-12 | Lg Innotek Co., Ltd. | Semiconductor light emitting device and method for manufacturing the same |
EP2216834B1 (en) * | 2007-11-29 | 2017-03-15 | Nichia Corporation | Light-emitting apparatus |
US8878219B2 (en) * | 2008-01-11 | 2014-11-04 | Cree, Inc. | Flip-chip phosphor coating method and devices fabricated utilizing method |
US20110018022A1 (en) * | 2008-03-13 | 2011-01-27 | Okabe Takehiko | Semiconductor light-emitting device and method for manufacturing the same |
US8637883B2 (en) * | 2008-03-19 | 2014-01-28 | Cree, Inc. | Low index spacer layer in LED devices |
JP2010021261A (ja) * | 2008-07-09 | 2010-01-28 | Toshiba Corp | 光半導体素子の製造方法、光半導体素子及び光半導体装置の製造方法 |
JP4799606B2 (ja) | 2008-12-08 | 2011-10-26 | 株式会社東芝 | 光半導体装置及び光半導体装置の製造方法 |
KR101134810B1 (ko) * | 2009-03-03 | 2012-04-13 | 엘지이노텍 주식회사 | 발광소자 및 그 제조방법 |
US8471280B2 (en) * | 2009-11-06 | 2013-06-25 | Koninklijke Philips Electronics N.V. | Silicone based reflective underfill and thermal coupler |
WO2011071100A1 (ja) * | 2009-12-11 | 2011-06-16 | 昭和電工株式会社 | 半導体発光素子、半導体発光素子を用いた発光装置および電子機器 |
TW201123548A (en) | 2009-12-25 | 2011-07-01 | Ind Tech Res Inst | A multi-layer stacked LED package |
JP2011199193A (ja) * | 2010-03-23 | 2011-10-06 | Toshiba Corp | 発光装置及びその製造方法 |
JP4875185B2 (ja) * | 2010-06-07 | 2012-02-15 | 株式会社東芝 | 光半導体装置 |
JP5398644B2 (ja) * | 2010-06-07 | 2014-01-29 | 株式会社東芝 | 半導体発光装置を用いた光源装置 |
KR101009744B1 (ko) * | 2010-07-26 | 2011-01-19 | (주)더리즈 | 반도체 발광소자 및 그 제조방법 |
CN102130285B (zh) * | 2010-11-03 | 2012-12-26 | 映瑞光电科技(上海)有限公司 | 发光二极管及其制造方法 |
-
2011
- 2011-11-16 KR KR1020110119823A patent/KR101969334B1/ko active IP Right Grant
-
2012
- 2012-11-14 JP JP2012249944A patent/JP6138458B2/ja active Active
- 2012-11-15 EP EP16164199.8A patent/EP3067942B1/en active Active
- 2012-11-15 EP EP12192706.5A patent/EP2595204B1/en active Active
- 2012-11-15 US US13/677,566 patent/US9397261B2/en not_active Expired - Fee Related
- 2012-11-16 CN CN201210466543.3A patent/CN103117347B/zh active Active
-
2015
- 2015-02-10 US US14/618,599 patent/US9893235B2/en active Active
Patent Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2001217467A (ja) * | 2000-02-02 | 2001-08-10 | Ind Technol Res Inst | 高効率白色発光ダイオード |
JP2008047861A (ja) * | 2006-08-14 | 2008-02-28 | Samsung Electro Mech Co Ltd | 垂直構造窒化ガリウム系発光ダイオード素子及びその製造方法 |
WO2010082286A1 (ja) * | 2009-01-13 | 2010-07-22 | 株式会社小糸製作所 | 発光モジュールおよび灯具ユニット |
JP2011009572A (ja) * | 2009-06-26 | 2011-01-13 | Citizen Electronics Co Ltd | フリップチップ実装型led及びフリップチップ実装型ledの製造方法。 |
JP2011061192A (ja) * | 2009-08-13 | 2011-03-24 | Showa Denko Kk | 半導体発光素子、半導体発光装置、半導体発光素子の製造方法、半導体発光装置の製造方法、半導体発光装置を用いた照明装置および電子機器 |
JP2011187679A (ja) * | 2010-03-09 | 2011-09-22 | Toshiba Corp | 半導体発光装置及びその製造方法 |
Cited By (31)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US11792898B2 (en) | 2012-07-01 | 2023-10-17 | Ideal Industries Lighting Llc | Enhanced fixtures for area lighting |
JPWO2015016150A1 (ja) * | 2013-07-30 | 2017-03-02 | 国立研究開発法人情報通信研究機構 | 半導体発光素子およびその製造方法 |
WO2015016150A1 (ja) * | 2013-07-30 | 2015-02-05 | 独立行政法人情報通信研究機構 | 半導体発光素子およびその製造方法 |
US10069049B2 (en) | 2013-07-30 | 2018-09-04 | National Institute Of Information And Communicatio | Semiconductor light emitting element and method for manufacturing the same |
US9172016B2 (en) | 2013-07-31 | 2015-10-27 | Kabushiki Kaisha Toshiba | Semiconductor light emitting device and method for manufacturing same |
JP2015220456A (ja) * | 2014-05-15 | 2015-12-07 | エルジー イノテック カンパニー リミテッド | 発光素子及びそれを含む照明装置 |
JP2016163015A (ja) * | 2015-03-05 | 2016-09-05 | 旭化成株式会社 | 紫外線発光素子及びその製造方法 |
JP2016207924A (ja) * | 2015-04-27 | 2016-12-08 | 日亜化学工業株式会社 | 発光装置及びその製造方法 |
JP2018520515A (ja) * | 2015-07-28 | 2018-07-26 | オスラム オプト セミコンダクターズ ゲゼルシャフト ミット ベシュレンクテル ハフツングOsram Opto Semiconductors GmbH | 金属キャリアを備える部品および部品を製造する方法 |
US10665758B2 (en) | 2015-07-28 | 2020-05-26 | Osram Oled Gmbh | Component having a metal carrier and method for producing components |
US10412829B2 (en) | 2015-08-03 | 2019-09-10 | Soko Kagaku Co., Ltd. | Nitride semiconductor light-emitting element base and manufacturing method thereof |
WO2017022755A1 (ja) * | 2015-08-03 | 2017-02-09 | 創光科学株式会社 | 窒化物半導体発光素子用の基台及びその製造方法 |
WO2017154973A1 (ja) * | 2016-03-08 | 2017-09-14 | 株式会社 東芝 | 半導体発光素子およびその製造方法 |
JP2019514217A (ja) * | 2016-04-12 | 2019-05-30 | クリー インコーポレイテッドCree Inc. | 高密度にピクセル化したマルチledチップ、これを組み込んだデバイス、およびこれを製造する方法 |
US11776938B2 (en) | 2016-04-12 | 2023-10-03 | Creeled, Inc. | High density pixelated LED and devices and methods thereof |
US11387221B2 (en) | 2016-04-12 | 2022-07-12 | Creeled, Inc. | High density pixelated LED and devices and methods thereof |
JP2022153366A (ja) * | 2016-11-03 | 2022-10-12 | スージョウ レキン セミコンダクター カンパニー リミテッド | 半導体素子およびこれを含む半導体素子パッケージ |
JP2018174238A (ja) * | 2017-03-31 | 2018-11-08 | 国立研究開発法人情報通信研究機構 | 半導体発光素子及びその製造方法並びに発光モジュール |
JP7050270B2 (ja) | 2017-03-31 | 2022-04-08 | 国立研究開発法人情報通信研究機構 | 半導体発光素子及び発光モジュール |
US11160148B2 (en) | 2017-06-13 | 2021-10-26 | Ideal Industries Lighting Llc | Adaptive area lamp |
US11417635B2 (en) | 2017-08-03 | 2022-08-16 | Creeled, Inc. | High density pixelated-LED chips and chip array devices |
US11664407B2 (en) | 2018-12-21 | 2023-05-30 | Creeled, Inc. | Pixelated-LED chips and chip array devices, and fabrication methods |
CN110444558B (zh) * | 2019-01-04 | 2021-11-16 | 友达光电股份有限公司 | 发光装置及其制造方法 |
CN110444558A (zh) * | 2019-01-04 | 2019-11-12 | 友达光电股份有限公司 | 发光装置及其制造方法 |
JP2022075717A (ja) * | 2019-01-11 | 2022-05-18 | 日亜化学工業株式会社 | 発光装置 |
JP7260828B2 (ja) | 2019-01-11 | 2023-04-19 | 日亜化学工業株式会社 | 発光装置 |
JP7037070B2 (ja) | 2019-01-11 | 2022-03-16 | 日亜化学工業株式会社 | 発光装置の製造方法 |
JP2020113640A (ja) * | 2019-01-11 | 2020-07-27 | 日亜化学工業株式会社 | 発光装置の製造方法および発光装置 |
JP7484727B2 (ja) | 2019-01-25 | 2024-05-16 | ソニーグループ株式会社 | 発光デバイスおよび画像表示装置 |
US11817526B2 (en) | 2019-10-29 | 2023-11-14 | Creeled, Inc. | Texturing for high density pixelated-LED chips and chip array devices |
US11437548B2 (en) | 2020-10-23 | 2022-09-06 | Creeled, Inc. | Pixelated-LED chips with inter-pixel underfill materials, and fabrication methods |
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EP3067942A1 (en) | 2016-09-14 |
EP2595204A2 (en) | 2013-05-22 |
EP2595204A3 (en) | 2014-01-29 |
EP3067942B1 (en) | 2019-10-09 |
KR101969334B1 (ko) | 2019-04-17 |
EP2595204B1 (en) | 2016-06-01 |
KR20130054041A (ko) | 2013-05-24 |
US9397261B2 (en) | 2016-07-19 |
US20150179884A1 (en) | 2015-06-25 |
US20130119424A1 (en) | 2013-05-16 |
CN103117347B (zh) | 2017-10-20 |
US9893235B2 (en) | 2018-02-13 |
JP6138458B2 (ja) | 2017-05-31 |
CN103117347A (zh) | 2013-05-22 |
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