JP6138458B2 - 発光装置及びこれを備えた発光装置 - Google Patents
発光装置及びこれを備えた発光装置 Download PDFInfo
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- JP6138458B2 JP6138458B2 JP2012249944A JP2012249944A JP6138458B2 JP 6138458 B2 JP6138458 B2 JP 6138458B2 JP 2012249944 A JP2012249944 A JP 2012249944A JP 2012249944 A JP2012249944 A JP 2012249944A JP 6138458 B2 JP6138458 B2 JP 6138458B2
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Classifications
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- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/20—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular shape, e.g. curved or truncated substrate
- H01L33/22—Roughened surfaces, e.g. at the interface between epitaxial layers
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- H—ELECTRICITY
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- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/20—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular shape, e.g. curved or truncated substrate
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- H—ELECTRICITY
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- H01L33/36—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
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- H—ELECTRICITY
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- H01L33/36—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
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Description
以下、添付した図面を参照して説明すれば、次の通りである。
前記支持部材151の下面は実質的に平坦な面で形成されるか、不規則な面で形成され、これに対して限定するものではない。
実施形態による発光素子又は発光素子は、照明システムに適用される。前記照明システムは、複数の発光素子がアレイされた構造を含み、図42及び図43に示されている表示装置、図44に示されている照明装置とを含み、照明灯、信号灯、車両前照灯、電光板などが含まれる。
11A、12、14 凹部
100、101 発光素子
111 基板
113 第1半導体層
115 第1導電型半導体層
117 活性層
119 第2導電型半導体層
120 発光構造物
130、131 反射電極層
133 絶縁層
135、136 第1電極
137、138 第2電極
141 第1連結電極
143 第2連結電極
151 支持部材
170 モジュール基板
200、201 発光素子パッケージ
Claims (12)
- 第1導電型半導体層、第2導電型半導体層、及び前記第1導電型半導体層と前記第2導電型半導体層との間に配置された活性層を含む発光構造物と、
前記発光構造物の上に複数の突起を有するパターン部と、
前記第1導電型半導体層の下に配置された第1電極と、
前記第2導電型半導体層の下に配置された反射電極層と、
前記反射電極層の下に配置された第2電極と、
前記第1電極の下に配置された第1連結電極と、
前記第2電極の下に配置された第2連結電極と、
前記第1電極及び前記第1連結電極と前記第2電極及び前記第2連結電極の周りに配置された支持部材と、
前記支持部材と前記反射電極層との間に配置され、前記第1導電型半導体層の下に延長される絶縁層と、を含み、
前記絶縁層は、前記反射電極層、前記第1電極、前記第2電極、及び前記支持部材に接触され、
前記パターン部は複数の突起を有する第1パターン部、及び前記第1パターン部の各突起に複数の凹部を有する第2パターン部を含み、
前記支持部材は、相互分離された複数の支持部材、及び前記複数の支持部材の間に分離溝を含み、
前記支持部材は、伝導性材質であることを特徴とする、発光素子。 - 前記発光構造物上に透光性基板が配置され、
前記第1及び第2パターン部は、前記透光性基板の上面に配置され、
前記第1パターン部の複数の突起のそれぞれは、半球型形状を含み、
前記第2パターン部の複数の凹部は、前記第1パターン部の複数の突起のそれぞれの表面から陰刻形状に形成されることを特徴とする、請求項1に記載の発光素子。 - 前記第2パターン部の複数の凹部は、前記第1パターン部の複数の突起のそれぞれの表面から陰刻形状に形成されることを特徴とする、請求項1に記載の発光素子。
- 前記凹部は多角錐形状を有することを特徴とする、請求項1乃至3のうち、いずれか1項に記載の発光素子。
- 前記第2パターン部の凹部の各々は前記各突起の幅の50%以下の小さな幅を有することを特徴とする、請求項1乃至4のうち、いずれか1項に記載の発光素子。
- 前記突起は0.1μm−10μm範囲の幅を有することを特徴とする、請求項1乃至5のうち、いずれか1項に記載の発光素子。
- 前記第1及び第2パターン部の上に配置された蛍光体層を含むことを特徴とする、請求項1乃至6のうち、いずれか1項に記載の発光素子。
- 前記蛍光体層の一部は前記第2パターン部の凹部に配置されることを特徴とする、請求項7に記載の発光素子。
- 前記蛍光体層の一部は前記第2パターン部の凹部の内及び前記発光構造物の側面に配置されることを特徴とする、請求項7に記載の発光素子。
- 前記反射電極層は前記発光構造物に接触されたオーミック接触層、前記オーミック接触層の下に配置された反射層、及び前記反射層の下に配置された第1拡散防止層を含み、
前記第1電極及び第2電極のうちの少なくとも1つは、前記第1拡散防止層の下に接着された第1接着層、前記第1接着層の下に第2拡散防止層、及び前記第2拡散防止層の下に第1ボンディング層を含むことを特徴とする、請求項1乃至9のうち、いずれか1項に記載の発光素子。 - 前記第1電極と前記第1連結電極との間に接合された第1電極ボンディング層、及び前記第2電極と前記第2連結電極との間に接合された第2電極ボンディング層を含み、
前記第1電極ボンディング層は前記第1電極に接合された第1接合電極、及び前記第1連結電極と前記第1接合電極との間に接合された第2接合電極を含み、
前記第2ボンディング電極層は、前記第2電極に接合された第3接合電極、及び前記第2連結電極と前記第3接合電極との間に接合された第4接合電極を含むことを特徴とする、請求項10に記載の発光素子。 - 前記分離溝には絶縁物質が配置されることを特徴とする、請求項1または2に記載の発光素子。
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Families Citing this family (93)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US9293656B2 (en) * | 2012-11-02 | 2016-03-22 | Epistar Corporation | Light emitting device |
US8716723B2 (en) | 2008-08-18 | 2014-05-06 | Tsmc Solid State Lighting Ltd. | Reflective layer between light-emitting diodes |
KR101803569B1 (ko) * | 2011-05-24 | 2017-12-28 | 엘지이노텍 주식회사 | 발광 소자 |
US9269878B2 (en) * | 2011-05-27 | 2016-02-23 | Lg Innotek Co., Ltd. | Light emitting device and light emitting apparatus |
TWI606618B (zh) * | 2012-01-03 | 2017-11-21 | Lg伊諾特股份有限公司 | 發光裝置 |
US11160148B2 (en) | 2017-06-13 | 2021-10-26 | Ideal Industries Lighting Llc | Adaptive area lamp |
US11792898B2 (en) | 2012-07-01 | 2023-10-17 | Ideal Industries Lighting Llc | Enhanced fixtures for area lighting |
JP5881560B2 (ja) * | 2012-08-30 | 2016-03-09 | 株式会社東芝 | 半導体発光装置及びその製造方法 |
CN103066178B (zh) * | 2012-12-29 | 2015-07-29 | 映瑞光电科技(上海)有限公司 | 一种倒装光子晶体led芯片及其制造方法 |
KR101504331B1 (ko) * | 2013-03-04 | 2015-03-19 | 삼성전자주식회사 | 발광소자 패키지 |
TWI661578B (zh) * | 2013-06-20 | 2019-06-01 | 晶元光電股份有限公司 | 發光裝置及發光陣列 |
KR102075655B1 (ko) * | 2013-06-24 | 2020-02-10 | 엘지이노텍 주식회사 | 발광 소자 및 발광 소자 패키지 |
TWI540766B (zh) * | 2013-07-10 | 2016-07-01 | 隆達電子股份有限公司 | 發光二極體封裝結構 |
US9548247B2 (en) * | 2013-07-22 | 2017-01-17 | Infineon Technologies Austria Ag | Methods for producing semiconductor devices |
KR102208684B1 (ko) * | 2013-07-30 | 2021-01-27 | 코쿠리츠켄큐카이하츠호진 죠호츠신켄큐키코 | 반도체 발광 소자 및 그 제조 방법 |
JP6045999B2 (ja) | 2013-07-31 | 2016-12-14 | 株式会社東芝 | 半導体発光装置及びその製造方法 |
CN103474559A (zh) * | 2013-09-02 | 2013-12-25 | 四川柏狮光电技术有限公司 | 荧光板材及其制备方法 |
KR102165264B1 (ko) * | 2013-10-10 | 2020-10-13 | 삼성전자 주식회사 | 아연 입자를 함유하는 비전도성 폴리머 막, 비전도성 폴리머 페이스트, 이들을 포함하는 반도체 패키지, 및 반도체 패키지의 제조 방법 |
TWI533478B (zh) * | 2013-10-14 | 2016-05-11 | 新世紀光電股份有限公司 | 覆晶式發光二極體封裝結構 |
JP6387780B2 (ja) | 2013-10-28 | 2018-09-12 | 日亜化学工業株式会社 | 発光装置及びその製造方法 |
KR102125450B1 (ko) | 2013-12-05 | 2020-06-22 | 엘지이노텍 주식회사 | 광변환부재 및 이를 포함하는 조명장치 |
KR102099441B1 (ko) * | 2013-12-19 | 2020-04-09 | 엘지이노텍 주식회사 | 발광소자 |
TWI552386B (zh) * | 2013-12-20 | 2016-10-01 | 新世紀光電股份有限公司 | 半導體發光結構及半導體封裝結構 |
US20150200336A1 (en) * | 2014-01-10 | 2015-07-16 | Cree, Inc. | Wafer level contact pad standoffs with integrated reflector |
CN105023983A (zh) * | 2014-04-24 | 2015-11-04 | 展晶科技(深圳)有限公司 | 覆晶式半导体发光元件及其制造方法 |
CN105098025A (zh) | 2014-05-07 | 2015-11-25 | 新世纪光电股份有限公司 | 发光装置 |
US10147854B2 (en) * | 2014-05-10 | 2018-12-04 | Sensor Electronic Technology, Inc. | Packaging for ultraviolet optoelectronic device |
US20160064631A1 (en) * | 2014-05-10 | 2016-03-03 | Sensor Electronic Technology, Inc. | Packaging for Ultraviolet Optoelectronic Device |
US9548429B2 (en) | 2014-05-10 | 2017-01-17 | Sensor Electronic Technology, Inc. | Packaging for ultraviolet optoelectronic device |
CN105098020B (zh) * | 2014-05-14 | 2018-11-09 | 中国科学院苏州纳米技术与纳米仿生研究所 | Led发光器件 |
KR102162437B1 (ko) * | 2014-05-15 | 2020-10-07 | 엘지이노텍 주식회사 | 발광 소자 및 이를 포함하는 발광 소자 패키지 |
KR102019914B1 (ko) * | 2014-06-11 | 2019-11-04 | 엘지이노텍 주식회사 | 발광 소자 |
KR102407827B1 (ko) * | 2015-01-27 | 2022-06-13 | 서울바이오시스 주식회사 | 발광 소자 |
TWI641285B (zh) | 2014-07-14 | 2018-11-11 | 新世紀光電股份有限公司 | 發光模組與發光單元的製作方法 |
US9373761B2 (en) * | 2014-09-23 | 2016-06-21 | Osram Sylvania Inc. | Patterned thin-film wavelength converter and method of making same |
TWI556469B (zh) * | 2014-12-19 | 2016-11-01 | 固美實國際股份有限公司 | 圖案化發光二極體基板 |
KR102309670B1 (ko) * | 2014-12-24 | 2021-10-07 | 쑤저우 레킨 세미컨덕터 컴퍼니 리미티드 | 발광소자, 발광소자 패키지 및 조명시스템 |
JP2016149462A (ja) * | 2015-02-12 | 2016-08-18 | 豊田合成株式会社 | 発光素子およびその製造方法 |
CN104638085A (zh) * | 2015-02-13 | 2015-05-20 | 常州乐迪电子科技有限公司 | 一种新型倒装芯片及其制作与封装方法 |
DE102015102365A1 (de) * | 2015-02-19 | 2016-08-25 | Osram Opto Semiconductors Gmbh | Strahlungskörper und Verfahren zur Herstellung eines Strahlungskörpers |
JP2016163015A (ja) * | 2015-03-05 | 2016-09-05 | 旭化成株式会社 | 紫外線発光素子及びその製造方法 |
JP6555907B2 (ja) * | 2015-03-16 | 2019-08-07 | アルパッド株式会社 | 半導体発光装置 |
JP6668608B2 (ja) * | 2015-04-27 | 2020-03-18 | 日亜化学工業株式会社 | 発光装置の製造方法 |
CN104993031B (zh) * | 2015-06-12 | 2018-03-06 | 映瑞光电科技(上海)有限公司 | 高压倒装led芯片及其制造方法 |
KR20170003102A (ko) * | 2015-06-30 | 2017-01-09 | 엘지이노텍 주식회사 | 발광소자 및 이를 포함하는 발광소자 패키지 |
DE102015112280A1 (de) | 2015-07-28 | 2017-02-02 | Osram Opto Semiconductors Gmbh | Bauelement mit einem metallischen Träger und Verfahren zur Herstellung von Bauelementen |
TW201712890A (zh) * | 2015-07-29 | 2017-04-01 | Nikkiso Co Ltd | 發光元件的製造方法 |
US10412829B2 (en) | 2015-08-03 | 2019-09-10 | Soko Kagaku Co., Ltd. | Nitride semiconductor light-emitting element base and manufacturing method thereof |
KR102373677B1 (ko) * | 2015-08-24 | 2022-03-14 | 쑤저우 레킨 세미컨덕터 컴퍼니 리미티드 | 발광소자 |
CN106486576B (zh) * | 2015-08-31 | 2018-10-26 | 展晶科技(深圳)有限公司 | 发光二极管元件 |
KR102415075B1 (ko) * | 2015-09-30 | 2022-06-30 | 쑤저우 레킨 세미컨덕터 컴퍼니 리미티드 | 발광소자 |
KR102481646B1 (ko) * | 2015-11-12 | 2022-12-29 | 삼성전자주식회사 | 반도체 발광소자 패키지 |
US10892390B2 (en) * | 2016-02-05 | 2021-01-12 | Lg Innotek Co., Ltd. | Light-emitting element and light-emitting element package including the same |
JP6916777B2 (ja) * | 2016-03-08 | 2021-08-11 | アルパッド株式会社 | 半導体発光素子およびその製造方法 |
US10529696B2 (en) * | 2016-04-12 | 2020-01-07 | Cree, Inc. | High density pixelated LED and devices and methods thereof |
CN106025010A (zh) * | 2016-07-19 | 2016-10-12 | 厦门乾照光电股份有限公司 | 一种基于导电dbr结构的倒装led芯片及其制作方法 |
JP6871706B2 (ja) | 2016-09-30 | 2021-05-12 | 日機装株式会社 | 半導体発光素子の製造方法 |
CN114725264A (zh) * | 2016-11-03 | 2022-07-08 | 苏州乐琻半导体有限公司 | 半导体器件和包括该半导体器件的半导体器件封装 |
EP3528297B1 (en) * | 2016-11-22 | 2021-05-19 | National Institute of Information and Communications Technology | Light-emitting module provided with semiconductor light-emitting element that emits deep ultraviolet light |
TWI790984B (zh) * | 2017-01-26 | 2023-01-21 | 晶元光電股份有限公司 | 發光元件 |
TWI759289B (zh) * | 2017-03-21 | 2022-04-01 | 晶元光電股份有限公司 | 發光元件 |
JP7050270B2 (ja) * | 2017-03-31 | 2022-04-08 | 国立研究開発法人情報通信研究機構 | 半導体発光素子及び発光モジュール |
US10734363B2 (en) | 2017-08-03 | 2020-08-04 | Cree, Inc. | High density pixelated-LED chips and chip array devices |
CN107706290A (zh) * | 2017-10-10 | 2018-02-16 | 青岛杰生电气有限公司 | 一种用于倒装芯片的紫外发光二极管及衬底刻蚀方法 |
DE102017125821A1 (de) * | 2017-11-06 | 2019-05-09 | Osram Opto Semiconductors Gmbh | Optoelektronischer Halbleiterchip und Verfahren zur Herstellung eines optoelektronischen Halbleiterchips |
US10910535B2 (en) | 2017-11-08 | 2021-02-02 | SemiLEDs Optoelectronics Co., Ltd. | Method for making light emitting device LED arrays |
CN108346675B (zh) * | 2017-12-28 | 2024-06-25 | 海迪科(南通)光电科技有限公司 | 发光二极管led或激光二极管ld阵列器件及其制备方法 |
CN108461388B (zh) * | 2018-03-26 | 2020-11-06 | 云谷(固安)科技有限公司 | 一种衬底结构、加工方法和显示装置 |
CN111326609B (zh) * | 2018-12-14 | 2021-05-25 | 成都辰显光电有限公司 | 发光器件、发光器件的制作方法及显示装置 |
US10903265B2 (en) | 2018-12-21 | 2021-01-26 | Cree, Inc. | Pixelated-LED chips and chip array devices, and fabrication methods |
TWI690102B (zh) * | 2019-01-04 | 2020-04-01 | 友達光電股份有限公司 | 發光裝置及其製造方法 |
JP7260828B2 (ja) * | 2019-01-11 | 2023-04-19 | 日亜化学工業株式会社 | 発光装置 |
JP7037070B2 (ja) * | 2019-01-11 | 2022-03-16 | 日亜化学工業株式会社 | 発光装置の製造方法 |
TWI687677B (zh) * | 2019-01-23 | 2020-03-11 | 國立清華大學 | 光學基板及其製備方法 |
WO2020153191A1 (ja) | 2019-01-25 | 2020-07-30 | ソニー株式会社 | 発光デバイスおよび画像表示装置 |
US11610868B2 (en) * | 2019-01-29 | 2023-03-21 | Osram Opto Semiconductors Gmbh | μ-LED, μ-LED device, display and method for the same |
KR20200137540A (ko) * | 2019-05-30 | 2020-12-09 | 서울바이오시스 주식회사 | 수직형 발광 다이오드 |
US11152540B2 (en) | 2019-07-29 | 2021-10-19 | Lextar Electronics Corporation | Light emitting diode structure and method of manufacturing thereof |
US20210091265A1 (en) * | 2019-08-21 | 2021-03-25 | Industrial Technology Research Institute | Light-emitting device and display apparatus |
CN110379899A (zh) * | 2019-08-26 | 2019-10-25 | 厦门乾照光电股份有限公司 | 一种led芯片及其制作方法 |
TWI714319B (zh) | 2019-10-28 | 2020-12-21 | 錼創顯示科技股份有限公司 | 微型發光二極體裝置 |
CN110752228B (zh) * | 2019-10-28 | 2022-05-24 | 錼创显示科技股份有限公司 | 微型发光二极管装置 |
US11817526B2 (en) | 2019-10-29 | 2023-11-14 | Creeled, Inc. | Texturing for high density pixelated-LED chips and chip array devices |
CN111261766A (zh) * | 2020-01-21 | 2020-06-09 | 厦门乾照光电股份有限公司 | 一种倒装薄膜led芯片结构及其制备方法 |
US11437548B2 (en) | 2020-10-23 | 2022-09-06 | Creeled, Inc. | Pixelated-LED chips with inter-pixel underfill materials, and fabrication methods |
CN112968092A (zh) * | 2020-11-19 | 2021-06-15 | 重庆康佳光电技术研究院有限公司 | 发光器件、其制作方法及具有其的显示面板 |
TWI760231B (zh) * | 2021-05-24 | 2022-04-01 | 錼創顯示科技股份有限公司 | 微型發光元件及其顯示裝置 |
CN113299809B (zh) * | 2021-05-24 | 2023-04-18 | 錼创显示科技股份有限公司 | 微型发光元件及其显示装置 |
CN113937197A (zh) * | 2021-10-13 | 2022-01-14 | 錼创显示科技股份有限公司 | 微型发光二极管显示面板 |
TWI811810B (zh) * | 2021-10-13 | 2023-08-11 | 錼創顯示科技股份有限公司 | 微型發光二極體顯示面板 |
US20230411562A1 (en) * | 2022-06-21 | 2023-12-21 | Creeled, Inc. | Light extraction structures for light-emitting diode chips and related methods |
CN116092382A (zh) * | 2022-12-30 | 2023-05-09 | 上海天马微电子有限公司 | 一种可折叠膜材结构及其制备方法、显示面板和显示装置 |
CN116544321B (zh) * | 2023-07-06 | 2024-04-02 | 季华实验室 | 发光芯片的制备方法、发光芯片以及显示面板 |
Family Cites Families (35)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH01160028A (ja) * | 1987-12-17 | 1989-06-22 | Matsushita Electric Ind Co Ltd | 電極の接続方法 |
US6486499B1 (en) * | 1999-12-22 | 2002-11-26 | Lumileds Lighting U.S., Llc | III-nitride light-emitting device with increased light generating capability |
TW465123B (en) * | 2000-02-02 | 2001-11-21 | Ind Tech Res Inst | High power white light LED |
US6642652B2 (en) * | 2001-06-11 | 2003-11-04 | Lumileds Lighting U.S., Llc | Phosphor-converted light emitting device |
JP4529319B2 (ja) * | 2001-06-27 | 2010-08-25 | 日亜化学工業株式会社 | 半導体チップとその製造方法 |
JP4214704B2 (ja) * | 2002-03-20 | 2009-01-28 | 日亜化学工業株式会社 | 半導体素子 |
KR100499129B1 (ko) * | 2002-09-02 | 2005-07-04 | 삼성전기주식회사 | 발광 다이오드 및 그 제조방법 |
US7179670B2 (en) | 2004-03-05 | 2007-02-20 | Gelcore, Llc | Flip-chip light emitting diode device without sub-mount |
TW200614548A (en) | 2004-07-09 | 2006-05-01 | Matsushita Electric Ind Co Ltd | Light-emitting device |
US20060204865A1 (en) * | 2005-03-08 | 2006-09-14 | Luminus Devices, Inc. | Patterned light-emitting devices |
KR100638813B1 (ko) | 2005-04-15 | 2006-10-27 | 삼성전기주식회사 | 플립칩형 질화물 반도체 발광소자 |
KR100736623B1 (ko) | 2006-05-08 | 2007-07-09 | 엘지전자 주식회사 | 수직형 발광 소자 및 그 제조방법 |
KR100816841B1 (ko) | 2006-08-14 | 2008-03-26 | 삼성전기주식회사 | 수직구조 질화갈륨계 발광다이오드 소자 및 그 제조방법 |
EP2087563B1 (en) * | 2006-11-15 | 2014-09-24 | The Regents of The University of California | Textured phosphor conversion layer light emitting diode |
KR100941766B1 (ko) * | 2007-08-08 | 2010-02-11 | 한국광기술원 | 패드 재배열을 이용한 반도체 발광 다이오드 및 그의제조방법 |
US7977695B2 (en) * | 2007-09-21 | 2011-07-12 | Lg Innotek Co., Ltd. | Semiconductor light emitting device and method for manufacturing the same |
JP5526782B2 (ja) * | 2007-11-29 | 2014-06-18 | 日亜化学工業株式会社 | 発光装置及びその製造方法 |
US8878219B2 (en) * | 2008-01-11 | 2014-11-04 | Cree, Inc. | Flip-chip phosphor coating method and devices fabricated utilizing method |
JP5522032B2 (ja) * | 2008-03-13 | 2014-06-18 | 豊田合成株式会社 | 半導体発光素子及びその製造方法 |
US8637883B2 (en) * | 2008-03-19 | 2014-01-28 | Cree, Inc. | Low index spacer layer in LED devices |
JP2010021261A (ja) * | 2008-07-09 | 2010-01-28 | Toshiba Corp | 光半導体素子の製造方法、光半導体素子及び光半導体装置の製造方法 |
JP4799606B2 (ja) * | 2008-12-08 | 2011-10-26 | 株式会社東芝 | 光半導体装置及び光半導体装置の製造方法 |
WO2010082286A1 (ja) * | 2009-01-13 | 2010-07-22 | 株式会社小糸製作所 | 発光モジュールおよび灯具ユニット |
KR101134810B1 (ko) * | 2009-03-03 | 2012-04-13 | 엘지이노텍 주식회사 | 발광소자 및 그 제조방법 |
JP2011009572A (ja) * | 2009-06-26 | 2011-01-13 | Citizen Electronics Co Ltd | フリップチップ実装型led及びフリップチップ実装型ledの製造方法。 |
US8629473B2 (en) * | 2009-08-13 | 2014-01-14 | Toyoda Gosei Co., Ltd. | Semiconductor light-emitting element, semiconductor light-emitting device, method for producing semiconductor light-emitting element, method for producing semiconductor light-emitting device, illumination device using semiconductor light-emitting device, and electronic apparatus |
US8471280B2 (en) * | 2009-11-06 | 2013-06-25 | Koninklijke Philips Electronics N.V. | Silicone based reflective underfill and thermal coupler |
JPWO2011071100A1 (ja) * | 2009-12-11 | 2013-04-22 | 豊田合成株式会社 | 半導体発光素子、半導体発光素子を用いた発光装置および電子機器 |
TW201123548A (en) | 2009-12-25 | 2011-07-01 | Ind Tech Res Inst | A multi-layer stacked LED package |
JP5202559B2 (ja) * | 2010-03-09 | 2013-06-05 | 株式会社東芝 | 半導体発光装置及びその製造方法 |
JP2011199193A (ja) * | 2010-03-23 | 2011-10-06 | Toshiba Corp | 発光装置及びその製造方法 |
JP4875185B2 (ja) * | 2010-06-07 | 2012-02-15 | 株式会社東芝 | 光半導体装置 |
JP5398644B2 (ja) * | 2010-06-07 | 2014-01-29 | 株式会社東芝 | 半導体発光装置を用いた光源装置 |
KR101009744B1 (ko) * | 2010-07-26 | 2011-01-19 | (주)더리즈 | 반도체 발광소자 및 그 제조방법 |
CN102130285B (zh) * | 2010-11-03 | 2012-12-26 | 映瑞光电科技(上海)有限公司 | 发光二极管及其制造方法 |
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