JP2013058774A - 支持されたゲート電極を備えるトランジスタの作製方法およびそれに関連するデバイス - Google Patents
支持されたゲート電極を備えるトランジスタの作製方法およびそれに関連するデバイス Download PDFInfo
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- 239000011241 protective layer Substances 0.000 claims abstract description 227
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- 238000004519 manufacturing process Methods 0.000 abstract description 32
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- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 60
- 239000000463 material Substances 0.000 description 40
- 229910002601 GaN Inorganic materials 0.000 description 30
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 30
- 150000004767 nitrides Chemical class 0.000 description 29
- 238000002161 passivation Methods 0.000 description 28
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- 239000004065 semiconductor Substances 0.000 description 16
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- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 description 15
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- 239000000377 silicon dioxide Substances 0.000 description 15
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- CPLXHLVBOLITMK-UHFFFAOYSA-N magnesium oxide Inorganic materials [Mg]=O CPLXHLVBOLITMK-UHFFFAOYSA-N 0.000 description 5
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- 238000011065 in-situ storage Methods 0.000 description 3
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- 238000002248 hydride vapour-phase epitaxy Methods 0.000 description 2
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- 229910004205 SiNX Inorganic materials 0.000 description 1
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- 238000009825 accumulation Methods 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
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- 238000001704 evaporation Methods 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
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- 238000001459 lithography Methods 0.000 description 1
- AXZKOIWUVFPNLO-UHFFFAOYSA-N magnesium;oxygen(2-) Chemical compound [O-2].[Mg+2] AXZKOIWUVFPNLO-UHFFFAOYSA-N 0.000 description 1
- 238000012423 maintenance Methods 0.000 description 1
- 230000007246 mechanism Effects 0.000 description 1
- 238000002488 metal-organic chemical vapour deposition Methods 0.000 description 1
- 238000001465 metallisation Methods 0.000 description 1
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- 238000001451 molecular beam epitaxy Methods 0.000 description 1
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- PEUPIGGLJVUNEU-UHFFFAOYSA-N nickel silicon Chemical compound [Si].[Ni] PEUPIGGLJVUNEU-UHFFFAOYSA-N 0.000 description 1
- 229910052758 niobium Inorganic materials 0.000 description 1
- GUCVJGMIXFAOAE-UHFFFAOYSA-N niobium atom Chemical compound [Nb] GUCVJGMIXFAOAE-UHFFFAOYSA-N 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 125000004430 oxygen atom Chemical group O* 0.000 description 1
- 230000003071 parasitic effect Effects 0.000 description 1
- 230000000149 penetrating effect Effects 0.000 description 1
- 230000000737 periodic effect Effects 0.000 description 1
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- WUAPFZMCVAUBPE-UHFFFAOYSA-N rhenium atom Chemical compound [Re] WUAPFZMCVAUBPE-UHFFFAOYSA-N 0.000 description 1
- 239000000523 sample Substances 0.000 description 1
- HYXGAEYDKFCVMU-UHFFFAOYSA-N scandium oxide Chemical compound O=[Sc]O[Sc]=O HYXGAEYDKFCVMU-UHFFFAOYSA-N 0.000 description 1
- 150000004756 silanes Chemical class 0.000 description 1
- 239000002904 solvent Substances 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
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- 229910052719 titanium Inorganic materials 0.000 description 1
- MAKDTFFYCIMFQP-UHFFFAOYSA-N titanium tungsten Chemical compound [Ti].[W] MAKDTFFYCIMFQP-UHFFFAOYSA-N 0.000 description 1
- -1 titanium tungsten nitride Chemical class 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
- 230000005533 two-dimensional electron gas Effects 0.000 description 1
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- H—ELECTRICITY
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
- H01L29/423—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions not carrying the current to be rectified, amplified or switched
- H01L29/42312—Gate electrodes for field effect devices
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- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
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- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66409—Unipolar field-effect transistors
- H01L29/66446—Unipolar field-effect transistors with an active layer made of a group 13/15 material, e.g. group 13/15 velocity modulation transistor [VMT], group 13/15 negative resistance FET [NERFET]
- H01L29/66462—Unipolar field-effect transistors with an active layer made of a group 13/15 material, e.g. group 13/15 velocity modulation transistor [VMT], group 13/15 negative resistance FET [NERFET] with a heterojunction interface channel or gate, e.g. HFET, HIGFET, SISFET, HJFET, HEMT
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- H01L29/772—Field effect transistors
- H01L29/778—Field effect transistors with two-dimensional charge carrier gas channel, e.g. HEMT ; with two-dimensional charge-carrier layer formed at a heterojunction interface
- H01L29/7786—Field effect transistors with two-dimensional charge carrier gas channel, e.g. HEMT ; with two-dimensional charge-carrier layer formed at a heterojunction interface with direct single heterostructure, i.e. with wide bandgap layer formed on top of active layer, e.g. direct single heterostructure MIS-like HEMT
- H01L29/7787—Field effect transistors with two-dimensional charge carrier gas channel, e.g. HEMT ; with two-dimensional charge-carrier layer formed at a heterojunction interface with direct single heterostructure, i.e. with wide bandgap layer formed on top of active layer, e.g. direct single heterostructure MIS-like HEMT with wide bandgap charge-carrier supplying layer, e.g. direct single heterostructure MODFET
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Abstract
【解決手段】ゲート電極の第1の部分は、開口の外側に存在する保護層の表面部分で横方向に延在し、ゲート電極の第2の部分は、保護層から間隔を空けて配置され、第1の部分を越えて横方向に延在する。関連したデバイスおよび作製方法も述べられる。
【選択図】図18
Description
いくつかの実施形態では、第2の層は、保護層上に形成されてもよく、かつ第2の層を貫通するリセスを含んでもよい。このリセスは、保護層の一部を露出させることができる。第2の層のリセスは、第1の開口を露出させ、かつ第1の開口の相対する側に保護層の表面部分を露出させる第2の開口を画定するように広くされてもよい。
他の実施形態では、誘電体ライナは、第1の開口の中で、保護層の側壁とゲート電極との間に延在してもよい。ゲート電極は、誘電体ライナに直接接していてもよい。
的に、ある要素が、別の要素に「直接に接続」または「直接に結合」されていると言われるとき、介在要素は存在しない。
意味、または過度に形式的な意味で解釈されないだろう。本明細書で言及されるすべての出版物、特許出願、特許、その他の文献は、その全体が参照して組み込まれる。
Claims (1)
- 保護層を形成するステップであって、前記保護層は、貫通して延在する開口を有するステップと、
ゲート電極の第1の部分が、前記開口の外側に存在する前記保護層の表面部分で横方向に延在するように、かつ、前記保護層から間隔を空けて配置された前記ゲート電極の第2の部分が、前記第1の部分を越えて横方向に延在するように、前記開口内に前記ゲート電極を形成するステップと
を含むことを特徴とするトランジスタを作製する方法。
Applications Claiming Priority (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US11/333,726 | 2006-01-17 | ||
US11/333,726 US7592211B2 (en) | 2006-01-17 | 2006-01-17 | Methods of fabricating transistors including supported gate electrodes |
US11/493,069 US7709269B2 (en) | 2006-01-17 | 2006-07-26 | Methods of fabricating transistors including dielectrically-supported gate electrodes |
US11/493,069 | 2006-07-26 |
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JP2008551316A Division JP5203220B2 (ja) | 2006-01-17 | 2007-01-16 | 支持されたゲート電極を備えるトランジスタの作製方法およびそれに関連するデバイス |
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Publication Number | Publication Date |
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JP2013058774A true JP2013058774A (ja) | 2013-03-28 |
JP2013058774A5 JP2013058774A5 (ja) | 2013-05-09 |
JP5805608B2 JP5805608B2 (ja) | 2015-11-04 |
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JP2012237917A Active JP5805608B2 (ja) | 2006-01-17 | 2012-10-29 | 支持されたゲート電極を備えるトランジスタの作製方法およびそれに関連するデバイス |
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JP5805608B2 (ja) | 2015-11-04 |
US8049252B2 (en) | 2011-11-01 |
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US20070164322A1 (en) | 2007-07-19 |
CA2634068C (en) | 2015-06-30 |
JP2009524242A (ja) | 2009-06-25 |
CA2634068A1 (en) | 2007-07-26 |
US7709269B2 (en) | 2010-05-04 |
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