JP2013008946A - 半導体装置 - Google Patents
半導体装置 Download PDFInfo
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- JP2013008946A JP2013008946A JP2012097372A JP2012097372A JP2013008946A JP 2013008946 A JP2013008946 A JP 2013008946A JP 2012097372 A JP2012097372 A JP 2012097372A JP 2012097372 A JP2012097372 A JP 2012097372A JP 2013008946 A JP2013008946 A JP 2013008946A
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- insulating film
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Classifications
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- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1203—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body the substrate comprising an insulating body on a semiconductor body, e.g. SOI
- H01L27/1207—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body the substrate comprising an insulating body on a semiconductor body, e.g. SOI combined with devices in contact with the semiconductor body, i.e. bulk/SOI hybrid circuits
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- H—ELECTRICITY
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/22—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities
- H01L21/225—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities using diffusion into or out of a solid from or into a solid phase, e.g. a doped oxide layer
- H01L21/2251—Diffusion into or out of group IV semiconductors
- H01L21/2254—Diffusion into or out of group IV semiconductors from or through or into an applied layer, e.g. photoresist, nitrides
- H01L21/2255—Diffusion into or out of group IV semiconductors from or through or into an applied layer, e.g. photoresist, nitrides the applied layer comprising oxides only, e.g. P2O5, PSG, H3BO3, doped oxides
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- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body
- H01L27/08—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including only semiconductor components of a single kind
- H01L27/085—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only
- H01L27/088—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only the components being field-effect transistors with insulated gate
- H01L27/092—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only the components being field-effect transistors with insulated gate complementary MIS field-effect transistors
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- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body
- H01L27/10—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including a plurality of individual components in a repetitive configuration
- H01L27/105—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including a plurality of individual components in a repetitive configuration including field-effect components
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- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
- H01L27/1222—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition, shape or crystalline structure of the active layer
- H01L27/1225—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition, shape or crystalline structure of the active layer with semiconductor materials not belonging to the group IV of the periodic table, e.g. InGaZnO
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- H—ELECTRICITY
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
- H01L27/1255—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs integrated with passive devices, e.g. auxiliary capacitors
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- H—ELECTRICITY
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
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- H01L28/40—Capacitors
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/04—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their crystalline structure, e.g. polycrystalline, cubic or particular orientation of crystalline planes
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- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
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- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/24—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only semiconductor materials not provided for in groups H01L29/16, H01L29/18, H01L29/20, H01L29/22
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Abstract
【解決手段】結晶性のシリコンをチャネル形成領域に有する第1のトランジスタを用いた記憶素子と、当該記憶素子のデータを記憶する容量素子と、当該容量素子における電荷の供給、保持、放出を制御するためのスイッチング素子である第2のトランジスタとを有する。第2のトランジスタは第1のトランジスタを覆う絶縁膜上に位置する。第1及び第2のトランジスタは、ソース電極又はドレイン電極を共有している。上記絶縁膜は、加熱により一部の酸素が脱離する第1の酸化絶縁膜と、酸素の拡散を防ぎ、なおかつ当該第1の酸化絶縁膜の周囲に設けられた第2の酸化絶縁膜とを有し、第2のトランジスタが有する酸化物半導体膜は、上記第1の酸化絶縁膜に接し、かつチャネル形成領域である第1の領域と、第1の領域を挟み、第1及び第2の酸化絶縁膜に接する一対の第2の領域とを有する半導体装置。
【選択図】図1
Description
本発明の一態様に係る半導体装置は、結晶性を有するシリコン、またはゲルマニウムなどの半導体をチャネル形成領域に有するトランジスタを用いた記憶素子と、当該記憶素子のデータを記憶する容量素子と、当該容量素子における電荷の供給、保持、放出を制御するスイッチング素子とを有する。図1に、記憶素子が有するnチャネル型トランジスタ102n及びpチャネル型トランジスタ102pと、容量素子136と、スイッチング素子が有するトランジスタ121との構成を断面図で一例として示す。
となる。数式6の右辺はVgsの関数である。数式6からわかるように、縦軸をIn(Ids/Vgs)、横軸を1/Vgsとする直線の傾きから、欠陥密度Nが求められる。すなわち、トランジスタのIds―Vgs特性から、欠陥密度を評価できる。
本実施の形態では、図3に示す構成をその一部に有する半導体装置の、作製方法の一例について説明する。
本実施の形態では、図1に示す構成をその一部に有する半導体装置の、作製方法の一例について説明する。
本実施の形態では、図39に示す構成をその一部に有する半導体装置の、作製方法の一例について説明する。
本実施の形態では、図36に示す構成をその一部に有する半導体装置の、作製方法の一例について説明する。
101 絶縁膜
102n nチャネル型トランジスタ
102p pチャネル型トランジスタ
103n 半導体膜
103p 半導体膜
104n ゲート絶縁膜
104p ゲート絶縁膜
105n ゲート電極
105p ゲート電極
106 導電膜
107 導電膜
108 第1の領域
109 第2の領域
110 第2の領域
111 第3の領域
111a 低濃度不純物領域
112 第3の領域
112a 低濃度不純物領域
113 導電膜
114 第1の領域
115 第2の領域
116 第2の領域
117 第3の領域
117a 低濃度不純物領域
118 第3の領域
118a 低濃度不純物領域
119 絶縁膜
120 絶縁膜
120a 酸化絶縁膜
120b 酸化絶縁膜
121 トランジスタ
122 酸化物半導体膜
123 ゲート絶縁膜
123a 絶縁膜
124 ゲート電極
124a 導電膜
125 導電膜
126 導電膜
127 第1の領域
128 第2の領域
129 第2の領域
130 サイドウォール
131 絶縁膜
131a 絶縁膜
132 端部
133 導電膜
134 絶縁膜
135 導電膜
136 容量素子
137 バックゲート電極
138 導電膜
140 絶縁膜
140a 酸化絶縁膜
140b 酸化絶縁膜
140c 酸化絶縁膜
141 開口部
142 酸化物半導体膜
142b 酸化物半導体膜
143 ゲート絶縁膜
143a 絶縁膜
144 ゲート電極
144a 導電膜
145 導電膜
146 導電膜
147 第1の領域
148 第2の領域
149 第2の領域
150 サイドウォール
151 絶縁膜
151a 絶縁膜
152 端部
153 導電膜
154 絶縁膜
155 導電膜
156 導電膜
157 バックゲート電極
158 導電膜
160 絶縁膜
161 導電膜
162 導電膜
163 導電膜
164 導電膜
170n サイドウォール
170p サイドウォール
171 絶縁膜
173 絶縁膜
174 絶縁膜
175 絶縁膜
180 絶縁膜
181 絶縁膜
186 導電膜
187 絶縁膜
188 導電膜
190 第3の領域
191 第3の領域
192 第3の領域
193 第3の領域
200 記憶回路
201 位相反転素子
202 位相反転素子
203 トランジスタ
204 トランジスタ
205 容量素子
206 スイッチング素子
207 pチャネル型トランジスタ
208 nチャネル型トランジスタ
209 pチャネル型トランジスタ
210 nチャネル型トランジスタ
211 記憶素子
401 スイッチング素子
402 記憶回路
403 記憶回路群
600 半導体装置
601 制御装置
602 ALU
603 データキャッシュ
604 命令キャッシュ
605 プログラムカウンタ
606 命令レジスタ
607 主記憶装置
608 レジスタファイル
1101 下地絶縁層
1102 絶縁物
1103a 半導体領域
1103b 半導体領域
1103c 半導体領域
1104 ゲート絶縁膜
1105 ゲート電極
1106a 側壁絶縁物
1106b 側壁絶縁物
1107 絶縁物
1108a ソース電極
1108b ドレイン電極
1500 基板
1502 下地絶縁膜
1504 保護絶縁膜
1506 酸化物半導体膜
1506a 高抵抗領域
1506b 低抵抗領域
1508 ゲート絶縁膜
1510 ゲート電極
1512 側壁絶縁膜
1514 電極
1516 層間絶縁膜
1518 配線
1600 基板
1602 下地絶縁膜
1606 酸化物半導体膜
1608 ゲート絶縁膜
1610 ゲート電極
1614 電極
1616 層間絶縁膜
1618 配線
1620 保護膜
7031 筐体
7032 筐体
7033 表示部
7034 表示部
7035 マイクロホン
7036 スピーカー
7037 操作キー
7038 スタイラス
7041 筐体
7042 表示部
7043 音声入力部
7044 音声出力部
7045 操作キー
7046 受光部
7051 筐体
7052 表示部
7053 操作キー
Claims (14)
- 第1トランジスタを用いた記憶素子と、前記記憶素子のデータを記憶する容量素子と、前記容量素子における電荷の供給、保持、放出を制御する第2トランジスタとを有し、
前記第1トランジスタは、結晶性のシリコンを有する半導体膜と、前記半導体膜上の第1のゲート絶縁膜と、前記第1のゲート絶縁膜上において前記半導体膜と重なる位置にある第1のゲート電極と、第1の導電膜及び第2の導電膜とを有し、
前記半導体膜、前記第1のゲート絶縁膜、及び前記第1のゲート電極は、絶縁膜に覆われており、
前記第1の導電膜及び前記第2の導電膜は、前記絶縁膜上に位置し、なおかつ、前記絶縁膜が有する開口部を介して前記半導体膜に接続されており、
前記第2トランジスタは、前記絶縁膜上の酸化物半導体膜と、前記酸化物半導体膜上の第2のゲート絶縁膜と、前記第2のゲート絶縁膜上において前記酸化物半導体膜と重なる位置にある第2のゲート電極と、前記酸化物半導体膜に接続された前記第1の導電膜及び第3の導電膜とを有し、
前記絶縁膜は、加熱により一部の酸素が脱離する第1の酸化絶縁膜と、酸素の拡散を防ぎ、なおかつ前記第1の酸化絶縁膜の周囲に設けられた第2の酸化絶縁膜とを有し、
前記酸化物半導体膜は、チャネル形成領域として機能し、なおかつ前記第1の酸化絶縁膜に接する第1の領域と、前記第1の領域を挟み、なおかつ前記第1の酸化絶縁膜及び前記第2の酸化絶縁膜に接する一対の第2の領域とを有する半導体装置。 - 請求項1において、
前記第2トランジスタは、前記第2のゲート絶縁膜上において前記第2のゲート電極の側部に位置するサイドウォールを有し、
前記第1の導電膜及び前記第3の導電膜は、前記サイドウォール及び一対の前記第2の領域に接する半導体装置。 - 結晶性を有するシリコンをチャネル形成領域に有する第1トランジスタを用いた記憶素子と、前記記憶素子のデータを記憶する容量素子と、前記容量素子における電荷の供給、保持、放出を制御するための第2トランジスタとを有し、
前記第2トランジスタは、前記第1トランジスタを覆う絶縁膜上に位置し、
前記絶縁膜は、加熱により一部の酸素が脱離する第1の酸化絶縁膜と、酸素の拡散を防ぎ、なおかつ前記第1の酸化絶縁膜の周囲に設けられた第2の酸化絶縁膜とを有し、
前記第2トランジスタが有する酸化物半導体膜は、チャネル形成領域として機能し、なおかつ前記第1の酸化絶縁膜に接する第1の領域と、前記第1の領域を挟み、なおかつ前記第1の酸化絶縁膜及び前記第2の酸化絶縁膜に接する一対の第2の領域とを有する半導体装置。 - 請求項3において、
前記第2トランジスタは、前記酸化物半導体膜に加えて、前記酸化物半導体膜上のゲート絶縁膜と、前記ゲート絶縁膜上のゲート電極と、前記ゲート絶縁膜上において前記ゲート電極の側部に位置するサイドウォールと、前記サイドウォール及び一対の前記第2の領域に接する一対の導電膜とを有する半導体装置。 - 第1トランジスタを用いた記憶素子と、前記記憶素子のデータを記憶する容量素子と、前記容量素子における電荷の供給、保持、放出を制御する第2トランジスタとを有し、
前記第1トランジスタは、結晶性のシリコンを有する半導体膜と、前記半導体膜上の第1のゲート絶縁膜と、前記第1のゲート絶縁膜上において前記半導体膜と重なる位置にある第1のゲート電極と、第1の導電膜及び第2の導電膜とを有し、
前記半導体膜、前記第1のゲート絶縁膜、及び前記第1のゲート電極は、絶縁膜に覆われており、
前記第1の導電膜及び前記第2の導電膜は、前記絶縁膜上に位置し、なおかつ、前記絶縁膜が有する開口部を介して前記半導体膜に接続されており、
前記第2トランジスタは、前記絶縁膜上の酸化物半導体膜と、前記酸化物半導体膜上の第2のゲート絶縁膜と、前記第2のゲート絶縁膜上において前記酸化物半導体膜と重なる位置にある第2のゲート電極と、前記酸化物半導体膜に接続された前記第1の導電膜及び第3の導電膜とを有し、
前記絶縁膜は、前記酸化物半導体膜の端部と接するように、前記酸化物半導体膜の周囲に設けられ、なおかつ加熱により一部の酸素が脱離する第1の酸化絶縁膜と、前記第1の酸化絶縁膜を間に挟んで前記酸化物半導体膜の周囲に設けられ、なおかつ酸素の拡散を防ぐ第2の酸化絶縁膜と、前記酸化物半導体膜の下部に設けられ、なおかつ加熱により一部の酸素が脱離する第3の酸化絶縁膜とを有し、
前記酸化物半導体膜は、チャネル形成領域として機能する第1の領域と、第1の領域を挟む一対の第2の領域とを有する半導体装置。 - 請求項5において、
前記第2トランジスタは、前記第2のゲート絶縁膜上において前記第2のゲート電極の側部に位置するサイドウォールを有し、
前記第1の導電膜及び前記第3の導電膜は、前記サイドウォール及び一対の前記第2の領域に接する半導体装置。 - 結晶性を有するシリコンをチャネル形成領域に有する第1トランジスタを用いた記憶素子と、前記記憶素子のデータを記憶する容量素子と、前記容量素子における電荷の供給、保持、放出を制御するための第2トランジスタとを有し、
前記第2トランジスタは、前記第1トランジスタを覆う絶縁膜上に位置し、
前記絶縁膜は、前記第2トランジスタが有する酸化物半導体膜の端部と接するように、前記酸化物半導体膜の周囲に設けられ、なおかつ加熱により一部の酸素が脱離する第1の酸化絶縁膜と、前記第1の酸化絶縁膜を間に挟んで前記酸化物半導体膜の周囲に設けられ、なおかつ酸素の拡散を防ぐ第2の酸化絶縁膜と、前記酸化物半導体膜の下部に設けられ、なおかつ加熱により一部の酸素が脱離する第3の酸化絶縁膜とを有し、
前記酸化物半導体膜は、チャネル形成領域として機能する第1の領域と、第1の領域を挟む一対の第2の領域とを有する半導体装置。 - 請求項7において、
前記第2トランジスタは、前記酸化物半導体膜に加えて、前記酸化物半導体膜上のゲート絶縁膜と、前記ゲート絶縁膜上のゲート電極と、前記ゲート絶縁膜上において前記ゲート電極の側部に位置するサイドウォールと、前記サイドウォール及び一対の前記第2の領域に接する一対の導電膜とを有する半導体装置。 - 請求項5乃至請求項8のいずれか1項において、前記第3の酸化絶縁膜は、酸化シリコン膜または酸化窒化シリコン膜である半導体装置。
- 請求項1乃至請求項9のいずれか1項において、前記第1の酸化絶縁膜は、酸化シリコン膜または酸化窒化シリコン膜である半導体装置。
- 請求項1乃至請求項10のいずれか1項において、
前記第2の酸化絶縁膜は、酸化アルミニウム膜または酸化窒化アルミニウム膜である半導体装置。 - 請求項1乃至請求項11のいずれか1項において、
前記第2の領域には、ヘリウム、アルゴン、またはキセノンが添加されている半導体装置。 - 請求項1乃至請求項12のいずれか1項において、
前記第2の領域には、窒素、リン、ヒ素、またはアンチモンが添加されている半導体装置。 - 請求項1乃至請求項13のいずれか1項において、前記第1のトランジスタは、単結晶シリコンの半導体基板上に形成されている半導体装置。
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JP2016184748A (ja) | 2016-10-20 |
EP2518767A2 (en) | 2012-10-31 |
KR20120122912A (ko) | 2012-11-07 |
US9773810B2 (en) | 2017-09-26 |
US20170179132A1 (en) | 2017-06-22 |
US10388670B2 (en) | 2019-08-20 |
KR101958383B1 (ko) | 2019-03-14 |
JP2018074167A (ja) | 2018-05-10 |
JP6250906B2 (ja) | 2017-12-20 |
EP2518767A3 (en) | 2016-07-27 |
TW201308326A (zh) | 2013-02-16 |
US20120273773A1 (en) | 2012-11-01 |
TWI556234B (zh) | 2016-11-01 |
CN106981489B (zh) | 2020-11-27 |
US9111795B2 (en) | 2015-08-18 |
CN102760488B (zh) | 2017-06-20 |
JP5934566B2 (ja) | 2016-06-15 |
US20190157309A1 (en) | 2019-05-23 |
CN106981489A (zh) | 2017-07-25 |
CN102760488A (zh) | 2012-10-31 |
US10910404B2 (en) | 2021-02-02 |
US20150340379A1 (en) | 2015-11-26 |
JP6533567B2 (ja) | 2019-06-19 |
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