JP2012256401A - 半導体装置 - Google Patents
半導体装置 Download PDFInfo
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- JP2012256401A JP2012256401A JP2011170162A JP2011170162A JP2012256401A JP 2012256401 A JP2012256401 A JP 2012256401A JP 2011170162 A JP2011170162 A JP 2011170162A JP 2011170162 A JP2011170162 A JP 2011170162A JP 2012256401 A JP2012256401 A JP 2012256401A
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- transistor
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- circuit
- oxide semiconductor
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- 239000004065 semiconductor Substances 0.000 title claims abstract description 540
- 239000000463 material Substances 0.000 claims description 180
- 230000015572 biosynthetic process Effects 0.000 claims description 66
- 230000002829 reductive effect Effects 0.000 abstract description 53
- 230000006870 function Effects 0.000 abstract description 13
- 239000010410 layer Substances 0.000 description 487
- 239000010408 film Substances 0.000 description 201
- 239000000758 substrate Substances 0.000 description 138
- 229910007541 Zn O Inorganic materials 0.000 description 107
- 238000010438 heat treatment Methods 0.000 description 103
- 239000003990 capacitor Substances 0.000 description 86
- 238000000034 method Methods 0.000 description 80
- 239000013078 crystal Substances 0.000 description 76
- 229910052760 oxygen Inorganic materials 0.000 description 68
- 239000001301 oxygen Substances 0.000 description 66
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 64
- 239000011701 zinc Substances 0.000 description 62
- 239000012535 impurity Substances 0.000 description 48
- 239000012298 atmosphere Substances 0.000 description 37
- 229910052739 hydrogen Inorganic materials 0.000 description 33
- 239000001257 hydrogen Substances 0.000 description 32
- 125000004429 atom Chemical group 0.000 description 31
- 229910052751 metal Inorganic materials 0.000 description 31
- 238000011282 treatment Methods 0.000 description 31
- 239000002184 metal Substances 0.000 description 30
- 125000004430 oxygen atom Chemical group O* 0.000 description 30
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 description 28
- 229910052738 indium Inorganic materials 0.000 description 28
- 238000010586 diagram Methods 0.000 description 26
- 239000000203 mixture Substances 0.000 description 26
- 229910052725 zinc Inorganic materials 0.000 description 26
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 25
- 238000005530 etching Methods 0.000 description 25
- 150000002500 ions Chemical class 0.000 description 24
- 238000004544 sputter deposition Methods 0.000 description 24
- 238000004519 manufacturing process Methods 0.000 description 23
- 101100422614 Arabidopsis thaliana STR15 gene Proteins 0.000 description 22
- 101100141327 Saccharomyces cerevisiae (strain ATCC 204508 / S288c) RNR3 gene Proteins 0.000 description 22
- 230000007547 defect Effects 0.000 description 22
- 101150112501 din1 gene Proteins 0.000 description 22
- 229910052733 gallium Inorganic materials 0.000 description 21
- 239000012212 insulator Substances 0.000 description 20
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 19
- 229910052710 silicon Inorganic materials 0.000 description 19
- 239000010703 silicon Substances 0.000 description 19
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 18
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 18
- 229910052782 aluminium Inorganic materials 0.000 description 18
- 230000005669 field effect Effects 0.000 description 18
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 18
- 229910052718 tin Inorganic materials 0.000 description 18
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 17
- 229910052814 silicon oxide Inorganic materials 0.000 description 17
- 229910052719 titanium Inorganic materials 0.000 description 17
- 239000010936 titanium Substances 0.000 description 17
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 16
- 239000007789 gas Substances 0.000 description 16
- VUFNLQXQSDUXKB-DOFZRALJSA-N 2-[4-[4-[bis(2-chloroethyl)amino]phenyl]butanoyloxy]ethyl (5z,8z,11z,14z)-icosa-5,8,11,14-tetraenoate Chemical compound CCCCC\C=C/C\C=C/C\C=C/C\C=C/CCCC(=O)OCCOC(=O)CCCC1=CC=C(N(CCCl)CCCl)C=C1 VUFNLQXQSDUXKB-DOFZRALJSA-N 0.000 description 15
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 15
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 15
- 229910001195 gallium oxide Inorganic materials 0.000 description 14
- 239000011787 zinc oxide Substances 0.000 description 14
- 230000007423 decrease Effects 0.000 description 13
- 150000002431 hydrogen Chemical class 0.000 description 13
- 229910052757 nitrogen Inorganic materials 0.000 description 13
- 230000008569 process Effects 0.000 description 12
- 238000012360 testing method Methods 0.000 description 12
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 11
- 229910052581 Si3N4 Inorganic materials 0.000 description 11
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 11
- 238000003860 storage Methods 0.000 description 11
- 229910052786 argon Inorganic materials 0.000 description 10
- 238000004364 calculation method Methods 0.000 description 10
- AJNVQOSZGJRYEI-UHFFFAOYSA-N digallium;oxygen(2-) Chemical compound [O-2].[O-2].[O-2].[Ga+3].[Ga+3] AJNVQOSZGJRYEI-UHFFFAOYSA-N 0.000 description 10
- 230000005684 electric field Effects 0.000 description 10
- 229910052735 hafnium Inorganic materials 0.000 description 10
- 125000002887 hydroxy group Chemical group [H]O* 0.000 description 10
- 239000011229 interlayer Substances 0.000 description 10
- 238000005259 measurement Methods 0.000 description 10
- 239000002356 single layer Substances 0.000 description 10
- 229910019092 Mg-O Inorganic materials 0.000 description 9
- 229910019395 Mg—O Inorganic materials 0.000 description 9
- 238000005229 chemical vapour deposition Methods 0.000 description 9
- 238000002347 injection Methods 0.000 description 9
- 239000007924 injection Substances 0.000 description 9
- 239000011810 insulating material Substances 0.000 description 9
- 230000003647 oxidation Effects 0.000 description 9
- 238000007254 oxidation reaction Methods 0.000 description 9
- 238000000926 separation method Methods 0.000 description 9
- 239000000126 substance Substances 0.000 description 9
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 8
- 229910044991 metal oxide Inorganic materials 0.000 description 8
- 150000004706 metal oxides Chemical group 0.000 description 8
- 230000001681 protective effect Effects 0.000 description 8
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 8
- 229910052721 tungsten Inorganic materials 0.000 description 8
- 239000010937 tungsten Substances 0.000 description 8
- 238000002441 X-ray diffraction Methods 0.000 description 7
- 230000000694 effects Effects 0.000 description 7
- -1 for example Substances 0.000 description 7
- VBJZVLUMGGDVMO-UHFFFAOYSA-N hafnium atom Chemical compound [Hf] VBJZVLUMGGDVMO-UHFFFAOYSA-N 0.000 description 7
- 150000004678 hydrides Chemical class 0.000 description 7
- 230000010354 integration Effects 0.000 description 7
- 239000011259 mixed solution Substances 0.000 description 7
- 238000005240 physical vapour deposition Methods 0.000 description 7
- 239000000243 solution Substances 0.000 description 7
- BPQQTUXANYXVAA-UHFFFAOYSA-N Orthosilicate Chemical compound [O-][Si]([O-])([O-])[O-] BPQQTUXANYXVAA-UHFFFAOYSA-N 0.000 description 6
- 229910052795 boron group element Inorganic materials 0.000 description 6
- 238000001312 dry etching Methods 0.000 description 6
- 229910000449 hafnium oxide Inorganic materials 0.000 description 6
- WIHZLLGSGQNAGK-UHFFFAOYSA-N hafnium(4+);oxygen(2-) Chemical compound [O-2].[O-2].[Hf+4] WIHZLLGSGQNAGK-UHFFFAOYSA-N 0.000 description 6
- 229910052734 helium Inorganic materials 0.000 description 6
- 229910052750 molybdenum Inorganic materials 0.000 description 6
- 239000012299 nitrogen atmosphere Substances 0.000 description 6
- 230000002093 peripheral effect Effects 0.000 description 6
- 238000000206 photolithography Methods 0.000 description 6
- 238000001039 wet etching Methods 0.000 description 6
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 5
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 5
- 239000000956 alloy Substances 0.000 description 5
- 230000008859 change Effects 0.000 description 5
- 229910052802 copper Inorganic materials 0.000 description 5
- 239000010949 copper Substances 0.000 description 5
- 230000006866 deterioration Effects 0.000 description 5
- 239000001307 helium Substances 0.000 description 5
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 description 5
- 239000011159 matrix material Substances 0.000 description 5
- 239000011733 molybdenum Substances 0.000 description 5
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 5
- 230000001590 oxidative effect Effects 0.000 description 5
- 238000012545 processing Methods 0.000 description 5
- 230000000717 retained effect Effects 0.000 description 5
- 239000003381 stabilizer Substances 0.000 description 5
- 208000005156 Dehydration Diseases 0.000 description 4
- 229910005191 Ga 2 O 3 Inorganic materials 0.000 description 4
- 229910052779 Neodymium Inorganic materials 0.000 description 4
- NRTOMJZYCJJWKI-UHFFFAOYSA-N Titanium nitride Chemical compound [Ti]#N NRTOMJZYCJJWKI-UHFFFAOYSA-N 0.000 description 4
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 description 4
- 230000009471 action Effects 0.000 description 4
- 229910045601 alloy Inorganic materials 0.000 description 4
- RNQKDQAVIXDKAG-UHFFFAOYSA-N aluminum gallium Chemical compound [Al].[Ga] RNQKDQAVIXDKAG-UHFFFAOYSA-N 0.000 description 4
- 230000008901 benefit Effects 0.000 description 4
- 230000018044 dehydration Effects 0.000 description 4
- 238000006297 dehydration reaction Methods 0.000 description 4
- 238000006356 dehydrogenation reaction Methods 0.000 description 4
- 125000004435 hydrogen atom Chemical group [H]* 0.000 description 4
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 4
- 239000011261 inert gas Substances 0.000 description 4
- 238000005468 ion implantation Methods 0.000 description 4
- 230000014759 maintenance of location Effects 0.000 description 4
- QEFYFXOXNSNQGX-UHFFFAOYSA-N neodymium atom Chemical compound [Nd] QEFYFXOXNSNQGX-UHFFFAOYSA-N 0.000 description 4
- 229910052715 tantalum Inorganic materials 0.000 description 4
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 4
- JBQYATWDVHIOAR-UHFFFAOYSA-N tellanylidenegermanium Chemical compound [Te]=[Ge] JBQYATWDVHIOAR-UHFFFAOYSA-N 0.000 description 4
- MWUXSHHQAYIFBG-UHFFFAOYSA-N Nitric oxide Chemical compound O=[N] MWUXSHHQAYIFBG-UHFFFAOYSA-N 0.000 description 3
- 239000000460 chlorine Substances 0.000 description 3
- 229910052804 chromium Inorganic materials 0.000 description 3
- 239000011651 chromium Substances 0.000 description 3
- 238000011109 contamination Methods 0.000 description 3
- 238000002425 crystallisation Methods 0.000 description 3
- 230000008025 crystallization Effects 0.000 description 3
- 230000002349 favourable effect Effects 0.000 description 3
- 229910052732 germanium Inorganic materials 0.000 description 3
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 3
- 125000005843 halogen group Chemical group 0.000 description 3
- 229910001385 heavy metal Inorganic materials 0.000 description 3
- 239000007769 metal material Substances 0.000 description 3
- SIWVEOZUMHYXCS-UHFFFAOYSA-N oxo(oxoyttriooxy)yttrium Chemical compound O=[Y]O[Y]=O SIWVEOZUMHYXCS-UHFFFAOYSA-N 0.000 description 3
- BPUBBGLMJRNUCC-UHFFFAOYSA-N oxygen(2-);tantalum(5+) Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[Ta+5].[Ta+5] BPUBBGLMJRNUCC-UHFFFAOYSA-N 0.000 description 3
- 229920001721 polyimide Polymers 0.000 description 3
- 238000005036 potential barrier Methods 0.000 description 3
- 229910052706 scandium Inorganic materials 0.000 description 3
- SIXSYDAISGFNSX-UHFFFAOYSA-N scandium atom Chemical compound [Sc] SIXSYDAISGFNSX-UHFFFAOYSA-N 0.000 description 3
- 230000003746 surface roughness Effects 0.000 description 3
- 238000004381 surface treatment Methods 0.000 description 3
- 229910001936 tantalum oxide Inorganic materials 0.000 description 3
- 239000010409 thin film Substances 0.000 description 3
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 2
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 description 2
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 2
- ZAMOUSCENKQFHK-UHFFFAOYSA-N Chlorine atom Chemical compound [Cl] ZAMOUSCENKQFHK-UHFFFAOYSA-N 0.000 description 2
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 2
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 2
- 206010021143 Hypoxia Diseases 0.000 description 2
- FYYHWMGAXLPEAU-UHFFFAOYSA-N Magnesium Chemical compound [Mg] FYYHWMGAXLPEAU-UHFFFAOYSA-N 0.000 description 2
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 2
- 229910004298 SiO 2 Inorganic materials 0.000 description 2
- 229910020923 Sn-O Inorganic materials 0.000 description 2
- 229910006404 SnO 2 Inorganic materials 0.000 description 2
- 229910005728 SnZn Inorganic materials 0.000 description 2
- BOTDANWDWHJENH-UHFFFAOYSA-N Tetraethyl orthosilicate Chemical compound CCO[Si](OCC)(OCC)OCC BOTDANWDWHJENH-UHFFFAOYSA-N 0.000 description 2
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 2
- 229910000611 Zinc aluminium Inorganic materials 0.000 description 2
- QCWXUUIWCKQGHC-UHFFFAOYSA-N Zirconium Chemical compound [Zr] QCWXUUIWCKQGHC-UHFFFAOYSA-N 0.000 description 2
- LEVVHYCKPQWKOP-UHFFFAOYSA-N [Si].[Ge] Chemical compound [Si].[Ge] LEVVHYCKPQWKOP-UHFFFAOYSA-N 0.000 description 2
- HXFVOUUOTHJFPX-UHFFFAOYSA-N alumane;zinc Chemical compound [AlH3].[Zn] HXFVOUUOTHJFPX-UHFFFAOYSA-N 0.000 description 2
- JYMITAMFTJDTAE-UHFFFAOYSA-N aluminum zinc oxygen(2-) Chemical compound [O-2].[Al+3].[Zn+2] JYMITAMFTJDTAE-UHFFFAOYSA-N 0.000 description 2
- 229910052785 arsenic Inorganic materials 0.000 description 2
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 description 2
- SWXQKHHHCFXQJF-UHFFFAOYSA-N azane;hydrogen peroxide Chemical compound [NH4+].[O-]O SWXQKHHHCFXQJF-UHFFFAOYSA-N 0.000 description 2
- 229910052790 beryllium Inorganic materials 0.000 description 2
- ATBAMAFKBVZNFJ-UHFFFAOYSA-N beryllium atom Chemical compound [Be] ATBAMAFKBVZNFJ-UHFFFAOYSA-N 0.000 description 2
- 229910052796 boron Inorganic materials 0.000 description 2
- 239000000919 ceramic Substances 0.000 description 2
- 229910052801 chlorine Inorganic materials 0.000 description 2
- 125000001309 chloro group Chemical group Cl* 0.000 description 2
- 150000001875 compounds Chemical class 0.000 description 2
- 239000004020 conductor Substances 0.000 description 2
- 239000000470 constituent Substances 0.000 description 2
- 230000008878 coupling Effects 0.000 description 2
- 238000010168 coupling process Methods 0.000 description 2
- 238000005859 coupling reaction Methods 0.000 description 2
- 238000000151 deposition Methods 0.000 description 2
- 230000008021 deposition Effects 0.000 description 2
- 239000000428 dust Substances 0.000 description 2
- 230000014509 gene expression Effects 0.000 description 2
- 239000011521 glass Substances 0.000 description 2
- CABDFQZZWFMZOD-UHFFFAOYSA-N hydrogen peroxide;hydrochloride Chemical compound Cl.OO CABDFQZZWFMZOD-UHFFFAOYSA-N 0.000 description 2
- XEMZLVDIUVCKGL-UHFFFAOYSA-N hydrogen peroxide;sulfuric acid Chemical compound OO.OS(O)(=O)=O XEMZLVDIUVCKGL-UHFFFAOYSA-N 0.000 description 2
- 229910003437 indium oxide Inorganic materials 0.000 description 2
- PJXISJQVUVHSOJ-UHFFFAOYSA-N indium(iii) oxide Chemical compound [O-2].[O-2].[O-2].[In+3].[In+3] PJXISJQVUVHSOJ-UHFFFAOYSA-N 0.000 description 2
- 229910052742 iron Inorganic materials 0.000 description 2
- 230000001678 irradiating effect Effects 0.000 description 2
- 229910052749 magnesium Inorganic materials 0.000 description 2
- 239000011777 magnesium Substances 0.000 description 2
- 229910052748 manganese Inorganic materials 0.000 description 2
- 239000011572 manganese Substances 0.000 description 2
- WPBNNNQJVZRUHP-UHFFFAOYSA-L manganese(2+);methyl n-[[2-(methoxycarbonylcarbamothioylamino)phenyl]carbamothioyl]carbamate;n-[2-(sulfidocarbothioylamino)ethyl]carbamodithioate Chemical compound [Mn+2].[S-]C(=S)NCCNC([S-])=S.COC(=O)NC(=S)NC1=CC=CC=C1NC(=S)NC(=O)OC WPBNNNQJVZRUHP-UHFFFAOYSA-L 0.000 description 2
- 229910052754 neon Inorganic materials 0.000 description 2
- GKAOGPIIYCISHV-UHFFFAOYSA-N neon atom Chemical compound [Ne] GKAOGPIIYCISHV-UHFFFAOYSA-N 0.000 description 2
- 239000002245 particle Substances 0.000 description 2
- 230000035515 penetration Effects 0.000 description 2
- 229910052698 phosphorus Inorganic materials 0.000 description 2
- 239000011574 phosphorus Substances 0.000 description 2
- 238000005268 plasma chemical vapour deposition Methods 0.000 description 2
- 238000009832 plasma treatment Methods 0.000 description 2
- 239000010453 quartz Substances 0.000 description 2
- 238000004151 rapid thermal annealing Methods 0.000 description 2
- 230000002441 reversible effect Effects 0.000 description 2
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 2
- 229910010271 silicon carbide Inorganic materials 0.000 description 2
- 229910021422 solar-grade silicon Inorganic materials 0.000 description 2
- 150000003608 titanium Chemical class 0.000 description 2
- 229910052726 zirconium Inorganic materials 0.000 description 2
- 238000012935 Averaging Methods 0.000 description 1
- 101100063435 Caenorhabditis elegans din-1 gene Proteins 0.000 description 1
- 229910052684 Cerium Inorganic materials 0.000 description 1
- 229910052692 Dysprosium Inorganic materials 0.000 description 1
- 229910052691 Erbium Inorganic materials 0.000 description 1
- 229910052693 Europium Inorganic materials 0.000 description 1
- PXGOKWXKJXAPGV-UHFFFAOYSA-N Fluorine Chemical compound FF PXGOKWXKJXAPGV-UHFFFAOYSA-N 0.000 description 1
- 229910052688 Gadolinium Inorganic materials 0.000 description 1
- 229910052689 Holmium Inorganic materials 0.000 description 1
- MHAJPDPJQMAIIY-UHFFFAOYSA-N Hydrogen peroxide Chemical compound OO MHAJPDPJQMAIIY-UHFFFAOYSA-N 0.000 description 1
- GPXJNWSHGFTCBW-UHFFFAOYSA-N Indium phosphide Chemical compound [In]#P GPXJNWSHGFTCBW-UHFFFAOYSA-N 0.000 description 1
- 108010083687 Ion Pumps Proteins 0.000 description 1
- 229910052765 Lutetium Inorganic materials 0.000 description 1
- CBENFWSGALASAD-UHFFFAOYSA-N Ozone Chemical compound [O-][O+]=O CBENFWSGALASAD-UHFFFAOYSA-N 0.000 description 1
- 239000004642 Polyimide Substances 0.000 description 1
- 229910052777 Praseodymium Inorganic materials 0.000 description 1
- 229910052772 Samarium Inorganic materials 0.000 description 1
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 1
- 229910000577 Silicon-germanium Inorganic materials 0.000 description 1
- 229910020994 Sn-Zn Inorganic materials 0.000 description 1
- 229910009069 Sn—Zn Inorganic materials 0.000 description 1
- 229910052771 Terbium Inorganic materials 0.000 description 1
- 229910052775 Thulium Inorganic materials 0.000 description 1
- 238000005411 Van der Waals force Methods 0.000 description 1
- 229910052769 Ytterbium Inorganic materials 0.000 description 1
- AZWHFTKIBIQKCA-UHFFFAOYSA-N [Sn+2]=O.[O-2].[In+3] Chemical compound [Sn+2]=O.[O-2].[In+3] AZWHFTKIBIQKCA-UHFFFAOYSA-N 0.000 description 1
- NIXOWILDQLNWCW-UHFFFAOYSA-N acrylic acid group Chemical group C(C=C)(=O)O NIXOWILDQLNWCW-UHFFFAOYSA-N 0.000 description 1
- 230000004913 activation Effects 0.000 description 1
- 239000005407 aluminoborosilicate glass Substances 0.000 description 1
- 239000005354 aluminosilicate glass Substances 0.000 description 1
- 229910021529 ammonia Inorganic materials 0.000 description 1
- 229910052788 barium Inorganic materials 0.000 description 1
- DSAJWYNOEDNPEQ-UHFFFAOYSA-N barium atom Chemical compound [Ba] DSAJWYNOEDNPEQ-UHFFFAOYSA-N 0.000 description 1
- 230000004888 barrier function Effects 0.000 description 1
- 239000005388 borosilicate glass Substances 0.000 description 1
- 125000004432 carbon atom Chemical group C* 0.000 description 1
- 229910052800 carbon group element Inorganic materials 0.000 description 1
- 239000000969 carrier Substances 0.000 description 1
- GWXLDORMOJMVQZ-UHFFFAOYSA-N cerium Chemical compound [Ce] GWXLDORMOJMVQZ-UHFFFAOYSA-N 0.000 description 1
- 238000005660 chlorination reaction Methods 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 239000000356 contaminant Substances 0.000 description 1
- 230000002950 deficient Effects 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 238000007599 discharging Methods 0.000 description 1
- KBQHZAAAGSGFKK-UHFFFAOYSA-N dysprosium atom Chemical compound [Dy] KBQHZAAAGSGFKK-UHFFFAOYSA-N 0.000 description 1
- 238000010891 electric arc Methods 0.000 description 1
- 238000005566 electron beam evaporation Methods 0.000 description 1
- UYAHIZSMUZPPFV-UHFFFAOYSA-N erbium Chemical compound [Er] UYAHIZSMUZPPFV-UHFFFAOYSA-N 0.000 description 1
- OGPBJKLSAFTDLK-UHFFFAOYSA-N europium atom Chemical compound [Eu] OGPBJKLSAFTDLK-UHFFFAOYSA-N 0.000 description 1
- 238000001704 evaporation Methods 0.000 description 1
- 230000005284 excitation Effects 0.000 description 1
- 230000001747 exhibiting effect Effects 0.000 description 1
- 239000000284 extract Substances 0.000 description 1
- 229910052731 fluorine Inorganic materials 0.000 description 1
- 239000011737 fluorine Substances 0.000 description 1
- 125000001153 fluoro group Chemical group F* 0.000 description 1
- UIWYJDYFSGRHKR-UHFFFAOYSA-N gadolinium atom Chemical compound [Gd] UIWYJDYFSGRHKR-UHFFFAOYSA-N 0.000 description 1
- 229910052736 halogen Inorganic materials 0.000 description 1
- 150000002367 halogens Chemical class 0.000 description 1
- KJZYNXUDTRRSPN-UHFFFAOYSA-N holmium atom Chemical compound [Ho] KJZYNXUDTRRSPN-UHFFFAOYSA-N 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 238000007733 ion plating Methods 0.000 description 1
- 238000005304 joining Methods 0.000 description 1
- 229910052743 krypton Inorganic materials 0.000 description 1
- 229910052747 lanthanoid Inorganic materials 0.000 description 1
- 150000002602 lanthanoids Chemical class 0.000 description 1
- 229910052746 lanthanum Inorganic materials 0.000 description 1
- FZLIPJUXYLNCLC-UHFFFAOYSA-N lanthanum atom Chemical compound [La] FZLIPJUXYLNCLC-UHFFFAOYSA-N 0.000 description 1
- OHSVLFRHMCKCQY-UHFFFAOYSA-N lutetium atom Chemical compound [Lu] OHSVLFRHMCKCQY-UHFFFAOYSA-N 0.000 description 1
- 239000000696 magnetic material Substances 0.000 description 1
- 238000012423 maintenance Methods 0.000 description 1
- 230000003211 malignant effect Effects 0.000 description 1
- 229910001510 metal chloride Inorganic materials 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 150000004767 nitrides Chemical class 0.000 description 1
- 125000004433 nitrogen atom Chemical group N* 0.000 description 1
- QJGQUHMNIGDVPM-UHFFFAOYSA-N nitrogen group Chemical group [N] QJGQUHMNIGDVPM-UHFFFAOYSA-N 0.000 description 1
- 238000010943 off-gassing Methods 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 238000000059 patterning Methods 0.000 description 1
- 239000012466 permeate Substances 0.000 description 1
- 238000007747 plating Methods 0.000 description 1
- 238000005498 polishing Methods 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 239000000843 powder Substances 0.000 description 1
- PUDIUYLPXJFUGB-UHFFFAOYSA-N praseodymium atom Chemical compound [Pr] PUDIUYLPXJFUGB-UHFFFAOYSA-N 0.000 description 1
- 239000002243 precursor Substances 0.000 description 1
- 238000001953 recrystallisation Methods 0.000 description 1
- KZUNJOHGWZRPMI-UHFFFAOYSA-N samarium atom Chemical compound [Sm] KZUNJOHGWZRPMI-UHFFFAOYSA-N 0.000 description 1
- 229910052594 sapphire Inorganic materials 0.000 description 1
- 239000010980 sapphire Substances 0.000 description 1
- 238000001004 secondary ion mass spectrometry Methods 0.000 description 1
- 229910000077 silane Inorganic materials 0.000 description 1
- 150000003376 silicon Chemical class 0.000 description 1
- LIVNPJMFVYWSIS-UHFFFAOYSA-N silicon monoxide Chemical compound [Si-]#[O+] LIVNPJMFVYWSIS-UHFFFAOYSA-N 0.000 description 1
- 238000001228 spectrum Methods 0.000 description 1
- 238000004528 spin coating Methods 0.000 description 1
- 230000002269 spontaneous effect Effects 0.000 description 1
- 239000007921 spray Substances 0.000 description 1
- 230000003068 static effect Effects 0.000 description 1
- 238000000859 sublimation Methods 0.000 description 1
- 230000008022 sublimation Effects 0.000 description 1
- MZLGASXMSKOWSE-UHFFFAOYSA-N tantalum nitride Chemical class [Ta]#N MZLGASXMSKOWSE-UHFFFAOYSA-N 0.000 description 1
- 230000002277 temperature effect Effects 0.000 description 1
- GZCRRIHWUXGPOV-UHFFFAOYSA-N terbium atom Chemical compound [Tb] GZCRRIHWUXGPOV-UHFFFAOYSA-N 0.000 description 1
- FRNOGLGSGLTDKL-UHFFFAOYSA-N thulium atom Chemical compound [Tm] FRNOGLGSGLTDKL-UHFFFAOYSA-N 0.000 description 1
- XOLBLPGZBRYERU-UHFFFAOYSA-N tin dioxide Chemical compound O=[Sn]=O XOLBLPGZBRYERU-UHFFFAOYSA-N 0.000 description 1
- 229910001887 tin oxide Inorganic materials 0.000 description 1
- 230000005641 tunneling Effects 0.000 description 1
- 238000001771 vacuum deposition Methods 0.000 description 1
- 229910052720 vanadium Inorganic materials 0.000 description 1
- NAWDYIZEMPQZHO-UHFFFAOYSA-N ytterbium Chemical compound [Yb] NAWDYIZEMPQZHO-UHFFFAOYSA-N 0.000 description 1
- OYQCBJZGELKKPM-UHFFFAOYSA-N zinc indium(3+) oxygen(2-) Chemical compound [O-2].[Zn+2].[O-2].[In+3] OYQCBJZGELKKPM-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
- G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
- G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
- G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
- G11C11/403—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells with charge regeneration common to a multiplicity of memory cells, i.e. external refresh
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
- G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
- G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
- G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
- G11C11/403—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells with charge regeneration common to a multiplicity of memory cells, i.e. external refresh
- G11C11/405—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells with charge regeneration common to a multiplicity of memory cells, i.e. external refresh with three charge-transfer gates, e.g. MOS transistors, per cell
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
- G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
- G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
- G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
- G11C11/4063—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing
- G11C11/407—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing for memory cells of the field-effect type
- G11C11/4074—Power supply or voltage generation circuits, e.g. bias voltage generators, substrate voltage generators, back-up power, power control circuits
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
- G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
- G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
- G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
- G11C11/4063—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing
- G11C11/407—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing for memory cells of the field-effect type
- G11C11/408—Address circuits
- G11C11/4087—Address decoders, e.g. bit - or word line decoders; Multiple line decoders
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1203—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body the substrate comprising an insulating body on a semiconductor body, e.g. SOI
- H01L27/1207—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body the substrate comprising an insulating body on a semiconductor body, e.g. SOI combined with devices in contact with the semiconductor body, i.e. bulk/SOI hybrid circuits
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- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
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- H01L27/1225—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition, shape or crystalline structure of the active layer with semiconductor materials not belonging to the group IV of the periodic table, e.g. InGaZnO
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Abstract
【解決手段】ワイドギャップ半導体、例えば酸化物半導体を含むメモリセルを用いて構成された半導体装置であって、メモリセルからの読み出しのために基準電位より低い電位を出力する機能を有する電位切り替え回路を備えた半導体装置とする。ワイドギャップ半導体を用いることで、メモリセルを構成するトランジスタのオフ電流を十分に小さくすることができ、長期間にわたって情報を保持することが可能な半導体装置を提供することができる。
【選択図】図2
Description
本実施の形態では、本発明の一態様に係る半導体装置の基本的な回路構成およびその動作について、図1を参照して説明する。なお、回路図においては、酸化物半導体を用いたトランジスタであることを示すために、OSの符号を併せて付す場合がある。
はじめに、最も基本的な回路構成およびその動作について、図1を参照して説明する。図1(A−1)に示す半導体装置において、ビット線BLとトランジスタ160のソース電極(またはドレイン電極)と、トランジスタ162のソース電極(またはドレイン電極)と、は、電気的に接続され、ソース線SLとトランジスタ160のドレイン電極(またはソース電極)とは、電気的に接続されている。また、ゲート線GLと、トランジスタ162のゲート電極とは、電気的に接続されている。そして、トランジスタ160のゲート電極と、トランジスタ162のドレイン電極(またはソース電極)は、容量素子164の電極の一方と電気的に接続され、容量線CLと、容量素子164の電極の他方は電気的に接続されている。なお、トランジスタ160のソース電極(またはドレイン電極)と、トランジスタ162のソース電極(またはドレイン電極)と、を電気的に接続させずに、それぞれが別の配線と電気的に接続する構成としてもよい。
次に、図1に示す回路を応用したより具体的な回路構成および動作について、図面を参照して説明する。本実施の形態では、複数の状態を一のメモリセルに保持させる、いわゆる多値メモリについて説明する。
本実施の形態では、開示する発明の一態様に係る半導体装置の構成およびその作製方法について図17乃至図22を参照して説明する。
図17は、半導体装置の構成の一例である。図17(A)には、半導体装置の断面を、図17(B)には、半導体装置の平面を、それぞれ示す。ここで、図17(A)は、図17(B)のA1−A2およびB1−B2における断面に相当する。図17(A)および図17(B)に示す半導体装置は、下部に第1の半導体材料を用いたトランジスタ160を有し、上部に第2の半導体材料を用いたトランジスタ162を有する。ここで、第1の半導体材料と第2の半導体材料とは異なる材料とすることが望ましい。例えば、第1の半導体材料を酸化物半導体以外の半導体材料とし、第2の半導体材料を酸化物半導体とすることができる。酸化物半導体以外の半導体材料としては、例えば、シリコン、ゲルマニウム、シリコンゲルマニウム、炭化シリコン、またはガリウムヒ素等を用いることができ、単結晶半導体を用いることが好ましい。他に、有機半導体材料などを用いてもよい。このような半導体材料を用いたトランジスタは、高速動作が容易である。一方で、酸化物半導体を用いたトランジスタは、その特性により長時間の電荷保持を可能とする。図17に示す半導体装置は、メモリセルとして用いることができる。
次に、上記半導体装置の作製に用いられるSOI基板の作製方法の一例について、図18を参照して説明する。
次に、上記のSOI基板を用いた半導体装置の作製方法について、図19乃至図22を参照して説明する。
はじめに下部のトランジスタ160の作製方法について、図19および図20を参照して説明する。なお、図19および図20は、図18に示す方法で作成したSOI基板の一部であって、図17(A)に示す下部のトランジスタに相当する断面工程図である。
次に、上部のトランジスタ162の作製方法について、図21および図22を参照して説明する。
(a−A)2+(b−B)2+(c−C)2≦r2
を満たすことを言う。rとしては、例えば、0.05とすればよい。他の酸化物でも同様である。
上記実施の形態において、トランジスタの半導体層に用いることのできる酸化物半導体層の一形態を、図27を用いて説明する。
本実施の形態では、c軸配向し、かつab面、表面または界面の方向から見て三角形状または六角形状の原子配列を有し、c軸においては金属原子が層状または金属原子と酸素原子とが層状に配列しており、ab面においてはa軸またはb軸の向きが異なる(c軸を中心に回転した)結晶(CAAC:C Axis Aligned Crystalともいう。)を含む酸化物について説明する。
本実施の形態では、トランジスタの電界効果移動度に関して説明する。
線形領域におけるドレイン電流Idは、以下の式となる。
上式の両辺をVgで割り、更に両辺の対数を取ると、以下のようになる。
本実施の形態では、酸化物半導体としてIn、Sn、Znを主成分とする酸化物半導体を用いたトランジスタについて説明する。
試料1および試料2のいずれも、BT試験前後におけるしきい値電圧の変動が小さく、信頼性が高いことがわかる。
本実施の形態では、上述の実施の形態で説明した半導体装置を電子機器に適用する場合について、図23を用いて説明する。本実施の形態では、コンピュータ、携帯電話機(携帯電話、携帯電話装置ともいう)、携帯情報端末(携帯型ゲーム機、音響再生装置なども含む)、デジタルカメラ、デジタルビデオカメラ、電子ペーパー、テレビジョン装置(テレビ、またはテレビジョン受信機ともいう)などの電子機器に、上述の半導体装置を適用する場合について説明する。
122 絶縁層
122a ゲート絶縁層
124 マスク
126 不純物領域
128a ゲート電極
128b 導電層
130 不純物領域
132 不純物領域
134 チャネル形成領域
136 絶縁層
138 絶縁層
140 絶縁層
142a ソース電極
142b ドレイン電極
144 酸化物半導体層
146 ゲート絶縁層
148a ゲート電極
148b 導電層
150 絶縁層
154 配線
156 絶縁層
160 トランジスタ
162 トランジスタ
164 容量素子
170 メモリセル
201 メモリセルアレイ
202 列駆動回路
203 行駆動回路
204 コントローラ
205 I/O制御回路
206 カウンタ
207 電位生成回路
221 ビット線およびソース線駆動回路
222 列デコーダ
223a アナログスイッチ
223b アナログスイッチ
224 回路
225 回路
226 ラッチ群
227 ラッチ
228 セレクタ
229 セレクタ
230 バッファ
231 ゲート線および容量線駆動回路
232 行デコーダ
321 NAND回路
322 レベルシフタ
323 負荷
324 センスアンプ
325 NAND回路
331 NAND回路
332 レベルシフタ
333 NAND回路
334 レベルシフタ
335 マルチプレクサ
336 マルチプレクサ
400 絶縁層
401 ゲート電極
402 ゲート絶縁層
403 酸化物半導体層
404a 酸化物導電層
404b 酸化物導電層
405a ソース電極
405b ドレイン電極
410 トランジスタ
420 トランジスタ
427 絶縁層
430 トランジスタ
437 絶縁層
440 トランジスタ
441 トランジスタ
442 トランジスタ
450a 結晶性酸化物半導体層
450b 結晶性酸化物半導体層
453 酸化物半導体層
500 半導体基板
510 単結晶半導体基板
512 酸化膜
514 脆化領域
516 単結晶半導体層
518 単結晶半導体層
701 筐体
702 筐体
703 表示部
704 キーボード
711 本体
712 スタイラス
713 表示部
714 操作ボタン
715 外部インターフェイス
720 電子書籍
721 筐体
723 筐体
725 表示部
727 表示部
731 電源スイッチ
733 操作キー
735 スピーカー
737 軸部
740 筐体
741 筐体
742 表示パネル
743 スピーカー
744 マイクロフォン
745 操作キー
746 ポインティングデバイス
747 カメラ用レンズ
748 外部接続端子
749 太陽電池セル
750 外部メモリスロット
761 本体
763 接眼部
764 操作スイッチ
765 表示部
766 バッテリー
767 表示部
770 テレビジョン装置
771 筐体
773 表示部
775 スタンド
780 リモコン操作機
1101 下地絶縁層
1102 埋め込み絶縁物
1103a 半導体領域
1103b 半導体領域
1103c 半導体領域
1104 ゲート絶縁層
1105 ゲート
1106a 側壁絶縁物
1106b 側壁絶縁物
1107 絶縁物
1108a ソース
1108b ドレイン
1200 基板
1202 下地絶縁層
1204 保護絶縁膜
1206 酸化物半導体膜
1206a 高抵抗領域
1206b 低抵抗領域
1208 ゲート絶縁層
1210 ゲート電極
1212 側壁絶縁膜
1214 電極
1216 層間絶縁膜
1218 配線
1600 基板
1602 下地絶縁層
1606 酸化物半導体膜
1608 ゲート絶縁層
1610 ゲート電極
1614 電極
1616 層間絶縁膜
1618 配線
1620 保護膜
Claims (11)
- m×n個のメモリセルでなるメモリセルアレイと、第1の駆動回路と、第2の駆動回路と、電位生成回路と、ビット線と、ソース線と、ゲート線と、を有し、
前記メモリセルの一は、
第1のゲート電極、第1のソース電極、第1のドレイン電極、及び第1のチャネル形成領域を含む第1のトランジスタと、
第2のゲート電極、第2のソース電極、第2のドレイン電極、及び第2のチャネル形成領域を含む第2のトランジスタと、
を有し、
前記第1のチャネル形成領域は、前記第2のチャネル形成領域とは異なる半導体材料を含んで構成され、
前記第1の駆動回路は、前記メモリセルの列毎に、Kビットのラッチ部と、Kビットのマルチプレクサを有する書き込み回路と、を有し、
前記書き込み回路は、前記電位生成回路と、前記Kビットのラッチ部に接続される、半導体装置。 - m×n個のメモリセルでなるメモリセルアレイと、第1の駆動回路と、第2の駆動回路と、Kビットのカウンタ(Kは自然数)と、電位生成回路と、ビット線と、ソース線と、ゲート線と、を有し、
前記メモリセルの一は、
第1のゲート電極、第1のソース電極、第1のドレイン電極、及び第1のチャネル形成領域を含む第1のトランジスタと、
第2のゲート電極、第2のソース電極、第2のドレイン電極、及び第2のチャネル形成領域を含む第2のトランジスタと、
を有し、
前記第1のチャネル形成領域は、前記第2のチャネル形成領域とは異なる半導体材料を含んで構成され、
前記第1の駆動回路は、前記メモリセルの列毎に、Kビットのラッチ部と、読み出し回路と、を有し、
前記Kビットのカウンタは、前記読み出し回路に接続され、
前記読み出し回路は、前記Kビットのラッチ部に接続される、半導体装置。 - m×n個のメモリセルでなるメモリセルアレイと、第1の駆動回路と、第2の駆動回路と、Kビットのカウンタ(Kは自然数)と、電位生成回路と、ビット線と、ソース線と、ゲート線と、を有し、
前記メモリセルの一は、
第1のゲート電極、第1のソース電極、第1のドレイン電極、及び第1のチャネル形成領域を含む第1のトランジスタと、
第2のゲート電極、第2のソース電極、第2のドレイン電極、及び第2のチャネル形成領域を含む第2のトランジスタと、
を有し、
前記第1のチャネル形成領域は、前記第2のチャネル形成領域とは異なる半導体材料を含んで構成され、
前記第1の駆動回路は、前記メモリセルの列毎に、Kビットのラッチ部と、Kビットのマルチプレクサを有する書き込み回路と、読み出し回路と、を有し、
前記Kビットのカウンタは、前記読み出し回路に接続され、
前記Kビットのラッチ部は、前記書き込み回路と、前記読み出し回路と、に接続される、
半導体装置。 - 前記ソース線は、前記第1のソース電極と接続され、
前記ビット線は、前記第1のドレイン電極と、前記第2のドレイン電極と接続され、
前記ゲート線は、前記第2のゲート電極と接続され、前記第1のゲート電極と、前記第2のソース電極と、は接続される、請求項1乃至請求項3に記載の半導体装置。 - 前記第1のトランジスタは、pチャネル型トランジスタであり、前記第2のトランジスタは、nチャネル型トランジスタである、請求項1乃至4のいずれか一に記載の半導体装置。
- 前記第2のトランジスタの前記第2のチャネル形成領域は、酸化物半導体を含んで構成される、請求項1乃至5のいずれか一に記載の半導体装置。
- 前記ビット線と前記ソース線との間に、前記メモリセルの一を含む複数のメモリセルが並列に接続された請求項1乃至6のいずれか一に記載の半導体装置。
- 前記ビット線と前記ソース線との間に、前記メモリセルの一を含む複数のメモリセルが直列に接続された請求項1乃至6のいずれか一に記載の半導体装置。
- 前記読み出し回路は、負荷と、センスアンプと、NAND回路と、を有し、
前記NAND回路の入力の一方には、前記センスアンプが接続されており、
前記NAND回路の入力の他方には、メモリ読み出し線が接続されており、
前記NAND回路の出力には、前記Kビットのラッチ部が接続される、請求項1乃至8のいずれか一に記載の半導体装置。 - 前記電位生成回路は、前記第1の駆動回路および前記第2の駆動回路に、それぞれ接続される、請求項1乃至9のいずれか一に記載の半導体装置。
- 前記Kビットのカウンタは、前記Kビットのラッチ部の入力と電気的に接続される、請求項1乃至10のいずれか一に記載の半導体装置。
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KR102006586B1 (ko) | 2019-08-01 |
JP6133928B2 (ja) | 2017-05-24 |
JP2017139050A (ja) | 2017-08-10 |
US20130301367A1 (en) | 2013-11-14 |
US8837232B2 (en) | 2014-09-16 |
CN103026416A (zh) | 2013-04-03 |
US8488394B2 (en) | 2013-07-16 |
TWI549131B (zh) | 2016-09-11 |
US20120033510A1 (en) | 2012-02-09 |
KR101925159B1 (ko) | 2018-12-04 |
CN103026416B (zh) | 2016-04-27 |
WO2012017844A1 (en) | 2012-02-09 |
KR20130098312A (ko) | 2013-09-04 |
JP5748602B2 (ja) | 2015-07-15 |
TW201209830A (en) | 2012-03-01 |
JP2015172993A (ja) | 2015-10-01 |
KR20180130595A (ko) | 2018-12-07 |
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