JP2012069871A5 - - Google Patents
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- JP2012069871A5 JP2012069871A5 JP2010215361A JP2010215361A JP2012069871A5 JP 2012069871 A5 JP2012069871 A5 JP 2012069871A5 JP 2010215361 A JP2010215361 A JP 2010215361A JP 2010215361 A JP2010215361 A JP 2010215361A JP 2012069871 A5 JP2012069871 A5 JP 2012069871A5
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- JP
- Japan
- Prior art keywords
- film
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- zro
- ctmaz
- layer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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- 229910010413 TiO 2 Inorganic materials 0.000 description 14
- 238000000034 method Methods 0.000 description 12
- 238000010926 purge Methods 0.000 description 11
- 230000015572 biosynthetic process Effects 0.000 description 10
- 239000007789 gas Substances 0.000 description 9
- ZSWFCLXCOIISFI-UHFFFAOYSA-N cyclopentadiene Chemical group C1C=CC=C1 ZSWFCLXCOIISFI-UHFFFAOYSA-N 0.000 description 5
- 238000001179 sorption measurement Methods 0.000 description 4
- 239000010936 titanium Substances 0.000 description 4
- 239000003990 capacitor Substances 0.000 description 3
- 239000012495 reaction gas Substances 0.000 description 3
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 2
- 239000000758 substrate Substances 0.000 description 2
- JWAJBRGDKGFMLZ-UHFFFAOYSA-N CC1(C=CC=C1)[Ti](N(C)C)(N(C)C)N(C)C Chemical compound CC1(C=CC=C1)[Ti](N(C)C)(N(C)C)N(C)C JWAJBRGDKGFMLZ-UHFFFAOYSA-N 0.000 description 1
- BZSHVKZUWZEIAH-UHFFFAOYSA-N CN(C)[Zr](C1(C=CC=C1)C)(N(C)C)N(C)C Chemical compound CN(C)[Zr](C1(C=CC=C1)C)(N(C)C)N(C)C BZSHVKZUWZEIAH-UHFFFAOYSA-N 0.000 description 1
- DCPPOHMFYUOVGH-UHFFFAOYSA-N CN(C)[Zr](C1C=CC=C1)(N(C)C)N(C)C Chemical compound CN(C)[Zr](C1C=CC=C1)(N(C)C)N(C)C DCPPOHMFYUOVGH-UHFFFAOYSA-N 0.000 description 1
- 125000003282 alkyl amino group Chemical group 0.000 description 1
- 238000004458 analytical method Methods 0.000 description 1
- 230000000903 blocking effect Effects 0.000 description 1
- 239000006227 byproduct Substances 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- RKTYLMNFRDHKIL-UHFFFAOYSA-N copper;5,10,15,20-tetraphenylporphyrin-22,24-diide Chemical compound [Cu+2].C1=CC(C(=C2C=CC([N-]2)=C(C=2C=CC=CC=2)C=2C=CC(N=2)=C(C=2C=CC=CC=2)C2=CC=C3[N-]2)C=2C=CC=CC=2)=NC1=C3C1=CC=CC=C1 RKTYLMNFRDHKIL-UHFFFAOYSA-N 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 125000000058 cyclopentadienyl group Chemical group C1(=CC=CC1)* 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 238000001095 inductively coupled plasma mass spectrometry Methods 0.000 description 1
- 239000002243 precursor Substances 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 230000005476 size effect Effects 0.000 description 1
Priority Applications (5)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2010215361A JP5587716B2 (ja) | 2010-09-27 | 2010-09-27 | 半導体装置及びその製造方法、並びに吸着サイト・ブロッキング原子層堆積法 |
| KR1020110097193A KR101515675B1 (ko) | 2010-09-27 | 2011-09-26 | 반도체 장치 및 그 제조 방법, 그리고 흡착 사이트ㆍ블로킹 원자층 퇴적법 |
| US13/245,515 US8288241B2 (en) | 2010-09-27 | 2011-09-26 | Semiconductor device, method of manufacturing the same and adsorption site blocking atomic layer deposition method |
| TW100134606A TW201230171A (en) | 2010-09-27 | 2011-09-26 | Semiconductor device, method of manufacturing the same and adsorption site blocking atomic layer deposition method |
| CN2011102968155A CN102446890A (zh) | 2010-09-27 | 2011-09-27 | 半导体装置及其制造方法、以及吸附位阻断原子层沉积法 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2010215361A JP5587716B2 (ja) | 2010-09-27 | 2010-09-27 | 半導体装置及びその製造方法、並びに吸着サイト・ブロッキング原子層堆積法 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2012069871A JP2012069871A (ja) | 2012-04-05 |
| JP2012069871A5 true JP2012069871A5 (https=) | 2013-08-15 |
| JP5587716B2 JP5587716B2 (ja) | 2014-09-10 |
Family
ID=45871073
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2010215361A Expired - Fee Related JP5587716B2 (ja) | 2010-09-27 | 2010-09-27 | 半導体装置及びその製造方法、並びに吸着サイト・ブロッキング原子層堆積法 |
Country Status (5)
| Country | Link |
|---|---|
| US (1) | US8288241B2 (https=) |
| JP (1) | JP5587716B2 (https=) |
| KR (1) | KR101515675B1 (https=) |
| CN (1) | CN102446890A (https=) |
| TW (1) | TW201230171A (https=) |
Families Citing this family (31)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP5693348B2 (ja) * | 2010-05-28 | 2015-04-01 | 東京エレクトロン株式会社 | 成膜方法および成膜装置 |
| TWI492368B (zh) | 2011-01-14 | 2015-07-11 | 半導體能源研究所股份有限公司 | 半導體記憶裝置 |
| JP5675458B2 (ja) * | 2011-03-25 | 2015-02-25 | 東京エレクトロン株式会社 | 成膜方法、成膜装置および記憶媒体 |
| JP2014017354A (ja) * | 2012-07-09 | 2014-01-30 | Tokyo Electron Ltd | 成膜方法 |
| US9536940B2 (en) * | 2012-09-19 | 2017-01-03 | Micron Technology, Inc. | Interfacial materials for use in semiconductor structures and related methods |
| JP6010451B2 (ja) * | 2012-12-21 | 2016-10-19 | 東京エレクトロン株式会社 | 成膜方法 |
| JP2014229680A (ja) * | 2013-05-21 | 2014-12-08 | ピーエスフォー ルクスコ エスエイアールエルＰＳ４ Ｌｕｘｃｏ Ｓ．ａ．ｒ．ｌ． | 半導体装置及びその製造方法 |
| US9245743B2 (en) | 2013-08-02 | 2016-01-26 | Intermolecular, Inc. | Methods for forming high-k dielectrics containing hafnium and zirconium using atomic layer deposition |
| JP6616070B2 (ja) * | 2013-12-01 | 2019-12-04 | ユージェヌス インコーポレイテッド | 誘電性複合体構造の作製方法及び装置 |
| JP6294151B2 (ja) * | 2014-05-12 | 2018-03-14 | 東京エレクトロン株式会社 | 成膜方法 |
| JP6478813B2 (ja) * | 2015-05-28 | 2019-03-06 | 東京エレクトロン株式会社 | 金属膜の成膜方法 |
| KR102375981B1 (ko) * | 2016-07-04 | 2022-03-18 | 삼성전자주식회사 | 반도체 장치 제조 방법 및 반도체 장치 제조 설비 |
| US10468264B2 (en) * | 2016-07-04 | 2019-11-05 | Samsung Electronics Co., Ltd. | Method of fabricating semiconductor device |
| KR102208520B1 (ko) | 2016-07-19 | 2021-01-26 | 어플라이드 머티어리얼스, 인코포레이티드 | 디스플레이 디바이스들에서 활용되는 지르코늄 산화물을 포함하는 하이-k 유전체 재료들 |
| EP3508035B1 (en) * | 2016-09-02 | 2021-04-21 | Beneq OY | Inorganic tfel display element and manufacturing |
| KR102070971B1 (ko) | 2017-01-02 | 2020-01-29 | 주식회사 엘지화학 | Abs계 그라프트 공중합체, 이의 제조방법 및 이를 포함하는 열가소성 수지 조성물 |
| JP6980406B2 (ja) * | 2017-04-25 | 2021-12-15 | 株式会社日立ハイテク | 半導体製造装置及び半導体装置の製造方法 |
| CN109494302B (zh) * | 2017-09-12 | 2024-04-05 | 松下知识产权经营株式会社 | 电容元件、图像传感器以及电容元件的制造方法 |
| CN107527806A (zh) * | 2017-09-29 | 2017-12-29 | 睿力集成电路有限公司 | 介电薄膜、介电层结构及制作方法 |
| WO2019156451A1 (ko) * | 2018-02-07 | 2019-08-15 | 주식회사 유피케미칼 | 4 족 금속 원소-함유 화합물, 이의 제조 방법, 이를 포함하는 막 형성용 전구체 조성물, 및 이를 이용하는 막의 형성 방법 |
| CN108893725B (zh) * | 2018-08-06 | 2020-08-04 | 吉林大学 | 一种使用多步原子层沉积技术生长均匀混合金属氧化物的方法 |
| JP6905149B2 (ja) | 2019-02-14 | 2021-07-21 | 株式会社日立ハイテク | 半導体製造装置 |
| KR102814796B1 (ko) | 2019-07-26 | 2025-05-29 | 삼성전자주식회사 | 2종 물질 산화막의 형성 방법, 반도체 소자의 제조 방법, 유전막 형성 방법, 및 반도체 소자 |
| KR102792553B1 (ko) | 2020-02-26 | 2025-04-08 | 삼성전자주식회사 | 커패시터, 이를 포함하는 반도체 장치. 및 커패시터 제조 방법 |
| KR102622419B1 (ko) | 2020-06-03 | 2024-01-08 | 삼성전자주식회사 | 반도체 장치 및 이의 제조 방법 |
| EP3926071A1 (en) * | 2020-06-19 | 2021-12-22 | Samsung Electronics Co., Ltd. | Method and apparatus for filling gap using atomic layer deposition |
| CN112038214A (zh) * | 2020-06-19 | 2020-12-04 | 中国科学院微电子研究所 | 一种氧化锆膜及其沉积方法、应用 |
| US11967502B2 (en) | 2020-06-30 | 2024-04-23 | Samsung Electronics Co., Ltd. | Methods of forming material layer, semiconductor devices, and methods of manufacturing the same |
| JP7787555B2 (ja) * | 2020-12-04 | 2025-12-17 | 株式会社高純度化学研究所 | インジウムおよび一種以上の他の金属を含有する膜を製造するための蒸着用原料およびインジウムおよび一種以上の他の金属を含有する膜の製造方法 |
| KR102813679B1 (ko) * | 2021-01-22 | 2025-05-27 | 삼성전자주식회사 | 반도체 장치 및 이의 제조 방법 |
| WO2023282104A1 (ja) | 2021-07-07 | 2023-01-12 | 株式会社Adeka | 化合物、薄膜形成用原料、薄膜及び薄膜の製造方法 |
Family Cites Families (20)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2000311956A (ja) * | 1999-04-27 | 2000-11-07 | Toshiba Corp | 不揮発性半導体記憶装置とその製造方法 |
| US6297539B1 (en) * | 1999-07-19 | 2001-10-02 | Sharp Laboratories Of America, Inc. | Doped zirconia, or zirconia-like, dielectric film transistor structure and deposition method for same |
| US6660660B2 (en) * | 2000-10-10 | 2003-12-09 | Asm International, Nv. | Methods for making a dielectric stack in an integrated circuit |
| EP1256638B1 (en) * | 2001-05-07 | 2008-03-26 | Samsung Electronics Co., Ltd. | Method of forming a multi-components thin film |
| KR100474847B1 (ko) * | 2001-05-07 | 2005-03-08 | 삼성전자주식회사 | 다성분계 박막 및 그 형성 방법 |
| US6656835B2 (en) * | 2001-06-21 | 2003-12-02 | Micron Technology, Inc. | Process for low temperature atomic layer deposition of Rh |
| KR100728962B1 (ko) | 2004-11-08 | 2007-06-15 | 주식회사 하이닉스반도체 | 지르코늄산화막을 갖는 반도체소자의 캐패시터 및 그 제조방법 |
| KR100634241B1 (ko) * | 2005-05-30 | 2006-10-13 | 삼성전자주식회사 | 반도체 커패시터 및 그 제조 방법 |
| JP2007067366A (ja) * | 2005-08-05 | 2007-03-15 | Elpida Memory Inc | 半導体記憶装置の製造方法 |
| KR100648860B1 (ko) * | 2005-09-08 | 2006-11-24 | 주식회사 하이닉스반도체 | 유전막 및 그 형성방법과, 상기 유전막을 구비한 반도체메모리 소자 및 그 제조방법 |
| JP4709115B2 (ja) * | 2005-10-12 | 2011-06-22 | 財団法人ソウル大学校産学協力財団 | ルテニウム電極と二酸化チタン誘電膜とを利用する半導体素子のキャパシタ及びその製造方法 |
| KR100670747B1 (ko) * | 2005-11-28 | 2007-01-17 | 주식회사 하이닉스반도체 | 반도체소자의 캐패시터 제조 방법 |
| KR100716654B1 (ko) * | 2006-04-04 | 2007-05-09 | 주식회사 하이닉스반도체 | 정방정계 구조의 지르코늄산화막 형성 방법 및 그를 구비한캐패시터의 제조 방법 |
| EP2029790A1 (en) * | 2006-06-02 | 2009-03-04 | L'AIR LIQUIDE, Société Anonyme pour l'Etude et l'Exploitation des Procédés Georges Claude | Method of forming high-k dielectric films based on novel titanium, zirconium, and hafnium precursors and their use for semiconductor manufacturing |
| WO2008108128A1 (ja) * | 2007-03-08 | 2008-09-12 | Nec Corporation | 誘電体、誘電体を用いたキャパシタ、誘電体を用いた半導体装置、及び誘電体の製造方法 |
| JP2009059889A (ja) * | 2007-08-31 | 2009-03-19 | Elpida Memory Inc | キャパシタ及びその製造方法 |
| CN101827956A (zh) * | 2007-09-14 | 2010-09-08 | 西格玛-奥吉奇公司 | 采用基于单环戊二烯基钛的前体通过原子层沉积制备含钛薄膜的方法 |
| WO2009057589A1 (ja) * | 2007-10-30 | 2009-05-07 | Nec Corporation | キャパシタとそれを有する半導体装置およびキャパシタの製造方法 |
| US8368175B2 (en) * | 2008-03-28 | 2013-02-05 | Nec Corporation | Capacitor, semiconductor device having the same, and method of producing them |
| JP2009283850A (ja) * | 2008-05-26 | 2009-12-03 | Elpida Memory Inc | キャパシタ用絶縁膜及びその形成方法、並びにキャパシタ及び半導体装置 |
-
2010
- 2010-09-27 JP JP2010215361A patent/JP5587716B2/ja not_active Expired - Fee Related
-
2011
- 2011-09-26 TW TW100134606A patent/TW201230171A/zh unknown
- 2011-09-26 US US13/245,515 patent/US8288241B2/en not_active Expired - Fee Related
- 2011-09-26 KR KR1020110097193A patent/KR101515675B1/ko not_active Expired - Fee Related
- 2011-09-27 CN CN2011102968155A patent/CN102446890A/zh active Pending
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