JP5693348B2 - 成膜方法および成膜装置 - Google Patents
成膜方法および成膜装置 Download PDFInfo
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- JP5693348B2 JP5693348B2 JP2011092088A JP2011092088A JP5693348B2 JP 5693348 B2 JP5693348 B2 JP 5693348B2 JP 2011092088 A JP2011092088 A JP 2011092088A JP 2011092088 A JP2011092088 A JP 2011092088A JP 5693348 B2 JP5693348 B2 JP 5693348B2
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- 238000000034 method Methods 0.000 title claims description 49
- 238000012545 processing Methods 0.000 claims description 78
- 239000007800 oxidant agent Substances 0.000 claims description 58
- 239000002994 raw material Substances 0.000 claims description 51
- 230000007246 mechanism Effects 0.000 claims description 45
- 230000001590 oxidative effect Effects 0.000 claims description 39
- MCMNRKCIXSYSNV-UHFFFAOYSA-N Zirconium dioxide Chemical compound O=[Zr]=O MCMNRKCIXSYSNV-UHFFFAOYSA-N 0.000 claims description 38
- QCWXUUIWCKQGHC-UHFFFAOYSA-N Zirconium Chemical compound [Zr] QCWXUUIWCKQGHC-UHFFFAOYSA-N 0.000 claims description 27
- 229910052726 zirconium Inorganic materials 0.000 claims description 27
- 229910052710 silicon Inorganic materials 0.000 claims description 18
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 16
- 239000010703 silicon Substances 0.000 claims description 16
- 238000010438 heat treatment Methods 0.000 claims description 14
- 239000006200 vaporizer Substances 0.000 claims description 11
- 230000015572 biosynthetic process Effects 0.000 claims description 6
- 239000000463 material Substances 0.000 claims description 6
- MROCJMGDEKINLD-UHFFFAOYSA-N dichlorosilane Chemical compound Cl[SiH2]Cl MROCJMGDEKINLD-UHFFFAOYSA-N 0.000 claims description 5
- FDNAPBUWERUEDA-UHFFFAOYSA-N silicon tetrachloride Chemical compound Cl[Si](Cl)(Cl)Cl FDNAPBUWERUEDA-UHFFFAOYSA-N 0.000 claims description 5
- LXEXBJXDGVGRAR-UHFFFAOYSA-N trichloro(trichlorosilyl)silane Chemical compound Cl[Si](Cl)(Cl)[Si](Cl)(Cl)Cl LXEXBJXDGVGRAR-UHFFFAOYSA-N 0.000 claims description 5
- 230000008016 vaporization Effects 0.000 claims description 5
- DCPPOHMFYUOVGH-UHFFFAOYSA-N CN(C)[Zr](C1C=CC=C1)(N(C)C)N(C)C Chemical compound CN(C)[Zr](C1C=CC=C1)(N(C)C)N(C)C DCPPOHMFYUOVGH-UHFFFAOYSA-N 0.000 claims description 3
- 238000009834 vaporization Methods 0.000 claims description 3
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 claims description 2
- 230000008021 deposition Effects 0.000 claims description 2
- PZPGRFITIJYNEJ-UHFFFAOYSA-N disilane Chemical compound [SiH3][SiH3] PZPGRFITIJYNEJ-UHFFFAOYSA-N 0.000 claims description 2
- 229910044991 metal oxide Inorganic materials 0.000 claims description 2
- 150000004706 metal oxides Chemical class 0.000 claims description 2
- 239000002210 silicon-based material Substances 0.000 claims description 2
- CGRVKSPUKAFTBN-UHFFFAOYSA-N N-silylbutan-1-amine Chemical compound CCCCN[SiH3] CGRVKSPUKAFTBN-UHFFFAOYSA-N 0.000 claims 1
- TWVSWDVJBJKDAA-UHFFFAOYSA-N n-[bis(dimethylamino)silyl]-n-methylmethanamine Chemical compound CN(C)[SiH](N(C)C)N(C)C TWVSWDVJBJKDAA-UHFFFAOYSA-N 0.000 claims 1
- SSCVMVQLICADPI-UHFFFAOYSA-N n-methyl-n-[tris(dimethylamino)silyl]methanamine Chemical compound CN(C)[Si](N(C)C)(N(C)C)N(C)C SSCVMVQLICADPI-UHFFFAOYSA-N 0.000 claims 1
- 239000007858 starting material Substances 0.000 claims 1
- 239000007789 gas Substances 0.000 description 126
- 239000010408 film Substances 0.000 description 114
- 238000010926 purge Methods 0.000 description 30
- 235000012431 wafers Nutrition 0.000 description 28
- 239000006185 dispersion Substances 0.000 description 18
- 239000007788 liquid Substances 0.000 description 18
- 230000008569 process Effects 0.000 description 17
- 239000003990 capacitor Substances 0.000 description 10
- 239000003708 ampul Substances 0.000 description 9
- 150000002484 inorganic compounds Chemical class 0.000 description 7
- 229910010272 inorganic material Inorganic materials 0.000 description 7
- 239000010453 quartz Substances 0.000 description 7
- 238000005001 rutherford backscattering spectroscopy Methods 0.000 description 7
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 7
- 238000006243 chemical reaction Methods 0.000 description 5
- 239000012528 membrane Substances 0.000 description 5
- 150000002902 organometallic compounds Chemical group 0.000 description 5
- 239000004065 semiconductor Substances 0.000 description 5
- 239000000758 substrate Substances 0.000 description 5
- 229910004298 SiO 2 Inorganic materials 0.000 description 4
- 230000006866 deterioration Effects 0.000 description 4
- 230000008901 benefit Effects 0.000 description 3
- 238000011088 calibration curve Methods 0.000 description 3
- 239000012159 carrier gas Substances 0.000 description 3
- 239000013078 crystal Substances 0.000 description 3
- RVTZCBVAJQQJTK-UHFFFAOYSA-N oxygen(2-);zirconium(4+) Chemical compound [O-2].[O-2].[Zr+4] RVTZCBVAJQQJTK-UHFFFAOYSA-N 0.000 description 3
- 238000005086 pumping Methods 0.000 description 3
- 230000002829 reductive effect Effects 0.000 description 3
- 238000007789 sealing Methods 0.000 description 3
- 229910001928 zirconium oxide Inorganic materials 0.000 description 3
- 229910006501 ZrSiO Inorganic materials 0.000 description 2
- 230000002411 adverse Effects 0.000 description 2
- 238000000137 annealing Methods 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 238000002474 experimental method Methods 0.000 description 2
- 239000011261 inert gas Substances 0.000 description 2
- 150000002500 ions Chemical group 0.000 description 2
- 150000002894 organic compounds Chemical class 0.000 description 2
- 230000003647 oxidation Effects 0.000 description 2
- 238000007254 oxidation reaction Methods 0.000 description 2
- 230000009257 reactivity Effects 0.000 description 2
- 238000001179 sorption measurement Methods 0.000 description 2
- 229910001220 stainless steel Inorganic materials 0.000 description 2
- 239000010935 stainless steel Substances 0.000 description 2
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 1
- 230000000052 comparative effect Effects 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 238000007599 discharging Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000003028 elevating effect Effects 0.000 description 1
- 238000001704 evaporation Methods 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- QHGSGZLLHBKSAH-UHFFFAOYSA-N hydridosilicon Chemical compound [SiH] QHGSGZLLHBKSAH-UHFFFAOYSA-N 0.000 description 1
- 229910052738 indium Inorganic materials 0.000 description 1
- 230000002401 inhibitory effect Effects 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 239000011553 magnetic fluid Substances 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 239000012299 nitrogen atmosphere Substances 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 230000035515 penetration Effects 0.000 description 1
- 230000002093 peripheral effect Effects 0.000 description 1
- 239000002243 precursor Substances 0.000 description 1
- 238000007790 scraping Methods 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 239000011343 solid material Substances 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- 230000009466 transformation Effects 0.000 description 1
- 238000003466 welding Methods 0.000 description 1
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- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
- H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
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- H01L21/02175—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing at least one metal element, e.g. metal oxides, metal nitrides, metal oxynitrides or metal carbides characterised by the metal
- H01L21/02189—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing at least one metal element, e.g. metal oxides, metal nitrides, metal oxynitrides or metal carbides characterised by the metal the material containing zirconium, e.g. ZrO2
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- C23C16/45529—Atomic layer deposition [ALD] characterized by the ALD cycle, e.g. different flows or temperatures during half-reactions, unusual pulsing sequence, use of precursor mixtures or auxiliary reactants or activations specially adapted for making a layer stack of alternating different compositions or gradient compositions
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- H01L21/02271—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase deposition by decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition
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- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
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- H01L21/28158—Making the insulator
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Description
図1は本発明の一実施形態に係る成膜方法を実施するための成膜装置の一例を示す縦断面図、図2は図1の成膜装置を示す横断面図、図3は本発明の一実施形態に係る成膜方法を説明するためのチャートである。なお、図2においては、加熱装置を省略している。
第1工程のステップS1においては、Zrソースガス供給機構15のZrソース貯留容器20からZrソースとして例えばTEMAZを供給し、気化器22で気化させて発生したZrソースガスをZrソースガス配管23およびZrソースガス分散ノズル24を介してガス吐出孔24aから処理容器1内にT1の期間供給する。これにより、ウエハ上にZrソースを吸着させる。このときの期間T1は1〜120secが例示される。また、Zrソースの流量は0.2〜0.5l/minが例示される。また、この際の処理容器1内の圧力は10〜100Paが例示される。Zrソースとしては、上述したように、TEMAZの他、同じく常温で液体であるTDEAZを好適に用いることができるし、常温で固体のものを用いることもできる。また、無機化合物を用いることもできる。
H6、TCS等の無機化合物を用いることもできる。無機化合物を用いることにより、Si濃度をより低くすることができる。
ここでは、まず、ZrソースとしてTEMAZを用い、Siソースとして3DMASを用い、酸化剤としてO3を用いて、図3のチャートに示す方法で図1の成膜装置によりシリコンウエハ上に成膜を行った。
図7は膜中Si濃度と膜のフラットキャパシターにおけるEOTとの関係を示す図であり、図8は膜中のSi濃度と膜のリーク電流との関係を示す図である。これらの図は、上記No.1(ジルコニア単膜)の測定値、および上記No.2の測定値を含むものであり、No.2のSi濃度としては上記RBS換算値を用い、他のプロットについてはSi濃度としてHRRBSでの検出値を用いている。これらの図から本発明の方法によって得られた微量のSiを含むジルコニア系膜(No.2)は、ジルコニア単膜と比較してEOTが同等で、リーク電流特性が改善されることが確認された。また、膜中Siが3.0atm%にてEOTが上昇し、5.0atm%程度にてかえってリーク電流が上昇することが確認された。
5;ウエハボート(供給手段)
14;酸化剤供給機構
15;Zrソースガス供給機構
16;Siソースガス供給機構
19;酸化剤分散ノズル
24;Zrソースガス分散ノズル
27;Siソースガス分散ノズル
40;加熱機構
100;成膜装置
W;半導体ウエハ(被処理体)
Claims (10)
- 真空保持可能な処理容器内に、凹凸形状部位を有した被処理体を搬入し、前記処理容器内を真空に保持した状態とし、
前記処理容器内にジルコニウム原料と酸化剤とをこの順に供給して前記被処理体の凹凸形状部位上にZrO膜を形成する第1工程と、前記処理容器内にジルコニウム原料とシリコン原料と酸化剤とをこの順で供給して前記被処理体の凹凸形状部位上にSiがドープされたZrO膜を形成する第2工程とを、平坦膜における膜中のSi濃度が1.0atm%以下になるように、前記第1工程の回数および前記第2工程の回数を調整して実施することにより、前記被処理体の凹凸形状部位上に結晶性を維持した所定膜厚のジルコニア系膜を成膜することを特徴とする成膜方法。 - 前記凹凸形状部位の凹部におけるジルコニア系膜の膜中のSi濃度が3.0atm%未満、前記凹凸形状部位の凸部におけるジルコニア系膜の膜中のSi濃度が0.02atm%以上になるように、前記第1工程の回数および前記第2工程の回数を調整することを特徴とする請求項1に記載の成膜方法。
- 前記ジルコニウム原料の供給と前記酸化剤の供給との間、および前記シリコン原料の供給と前記酸化剤の供給との間、前記ジルコニウム原料の供給と前記シリコン原料の供給との間に前記処理容器内のガスを排出することを特徴とする請求項1または請求項2に記載の成膜方法。
- 上記成膜の後、450℃以下の温度で得られた膜をアニールすることを特徴とする請求項1から請求項3のいずれか1項に記載の成膜方法。
- 前記ジルコニウム原料が、テトラキスエチルメチルアミノジルコニウム(TEMAZ)、テトラキスジエチルアミノジルコニウム(TDEAZ)、シクロペンタジエニルトリス(ジメチルアミノ)ジルコニウム(MCPDTMZ)のいずれか一つから選ばれることを特徴とする請求項1から請求項4のいずれか1項に記載の成膜方法。
- 前記ジルコニウム原料を気化させる際、前記ジルコニウム原料の蒸気圧を利用して気化されることを特徴とする請求項5に記載の成膜方法。
- 前記シリコン原料が、トリ−ジメチルアミノシラン(3DMAS)、テトラ−ジメチルアミノシラン(4DMAS)、ビスターシャリブチルアミノシラン(BTBAS)、ジクロロシラン(DCS)、ヘキサクロロジシラン(HCD)、モノシラン(SiH4)、ジシラン(Si2H6)、テトラクロロシラン(TCS)のいずれか一つから選ばれることを特徴とする請求項1から請求項6のいずれか1項に記載の成膜方法。
- 前記酸化剤は、O3ガス、H2Oガス、O2ガス、NO2ガス、NOガス、N2Oガス、O2ガスとH2ガスのラジカルから選択された少なくとも1種であることを特徴とする請求項1から請求項7のいずれか1項に記載の成膜方法。
- 凹凸形状部位を有した被処理体に対して金属酸化膜を成膜する成膜装置であって、
真空保持可能な縦型で筒体状をなす処理容器と、
前記被処理体を複数段に保持した状態で前記処理容器内に保持する保持部材と、
前記処理容器の外周に設けられた加熱装置と、
ジルコニウム原料を前記処理容器内に供給するジルコニウム原料供給機構と、
シリコン原料を前記処理容器内に供給するシリコン原料供給機構と、
前記処理容器内へ酸化剤を供給する酸化剤供給機構と、
前記加熱装置、前記ジルコニウム原料供給機構、前記シリコン原料供給機構および前記酸化剤供給機構を制御する制御機構とを具備し、
前記制御機構は、前記真空保持可能な処理容器内に被処理体が搬入され、前記処理容器内が真空に保持された状態で、請求項1から請求項5、請求項7および請求項8のいずれか一項に記載の成膜方法が実行されるように、前記加熱装置、前記ジルコニウム原料供給機構、前記シリコン原料供給機構および前記酸化剤供給機構を制御することを特徴とする成膜装置。 - 前記ジルコニウム原料供給機構は、前記ジルコニウム原料を気化させる気化器を含み、前記気化器が前記ジルコニウム原料を、該ジルコニウム原料の蒸気圧を利用して気化させることを特徴とする請求項9に記載の成膜装置。
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US7795160B2 (en) * | 2006-07-21 | 2010-09-14 | Asm America Inc. | ALD of metal silicate films |
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US7723771B2 (en) * | 2007-03-30 | 2010-05-25 | Qimonda Ag | Zirconium oxide based capacitor and process to manufacture the same |
US8159012B2 (en) * | 2007-09-28 | 2012-04-17 | Samsung Electronics Co., Ltd. | Semiconductor device including insulating layer of cubic system or tetragonal system |
US20090130414A1 (en) * | 2007-11-08 | 2009-05-21 | Air Products And Chemicals, Inc. | Preparation of A Metal-containing Film Via ALD or CVD Processes |
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